磁控溅射法制备极紫外6.8～11.0nm波段Mo/B_4C横向梯度多层膜（英文）

用直流磁控溅射法结合掩模板控制膜厚的方法在Si衬底上制备了工作于6.8～11.0nm波段的[Mo/B_4C]60横向梯度多层膜。利用X射线掠入射反射测试以及同步辐射反射率测试对梯度多层膜的结构及性能进行了测试。X射线掠入射反射测试结果表明,多层膜周期厚度沿着长轴方向从4.39nm逐渐增加到7.82nm,周期厚度平均梯度为0.054nm/mm。对横向梯度多层膜沿长轴方向每隔5mm进行了一次同步辐射反射率测试,结果显示,横向梯度多层膜在45°入射角下的反射率约为10%,反射峰的半高全宽介于0.13nm到0.31nm之间。     

50～11O nm波段高反射率多层膜的设计与制备

阐述了50～110 nm强吸收波段亚四分之一波长多层膜的设计方法.这种膜系是由强吸收材料叠加而成,每层膜光学厚度小于四分之一个波长.与常规周期多层膜相比,这种膜系更适用于提高强吸收波段的反射率.利用该方法设计了50 nm处高反射多层膜,并以此为初始条件通过Levenberg-Marquart优化方法完成了50～110 nm强吸收波段宽带高反射率Si/W/Co多层膜的设计,其平均反射率达到45%.采用直流磁控溅射方法制备了Si/W/Co多层膜,用X射线衍射仪(XRD)对膜层结构进行了测试,测试结果表明制作出的多层膜结构与设计结构基本相符.     

q软X光多层镜反射率在同步辐射源上的标定

软X光多层镜反射率标定实验在北京同步辐射装置上进行,利用BSRF-3W1B 束线及其反射率计靶室(主靶室)标定不同材料的多层镜样品的反射率.多层镜的标定采用波长扫描法,以得到样品反射率随波长变化的曲线.给出了21°-B4C/Si,21°-B4C/Mo,10°-Cr/Ti,15°- B4C/W,10°- B4C/W以及6.86°-B4C/W等6块多层镜在50～1 500 eV能段上的反射率标定曲线,并将其与理论计算结果进行比较.结果表明标定曲线与理论曲线很好地符合.影响标定结果的总不确定度的主要因素是光子能量不确定度,其次是角度不确定度,测量不确定度的影响很小.     

光电耦合器的反应堆中子辐射效应

选择3种典型光电耦合器开展了反应堆中子辐照实验,中子注量为3×1011~5×1012cm-2时,位移效应导致电流传输比下降,饱和压降提高。发光器件相同,探测器为Si PIN光电二极管的光电耦合器比探测器为Si NPN光敏晶体管的光电耦合器的初始电流传输比要小,但其抗位移损伤能力更强。探测器均为Si NPN光敏晶体管,发光器件为异质结LED要比硅两性掺杂LED的光电耦合器的电流传输比抗位移损伤能力提高2个量级;以光敏晶体管为探测器的光电耦合器,在较大的正向电流和输出负载电阻条件下工作可提高抗辐射水平。此外,光电耦合器的位移损伤存在加电退火效应。     

Influence of working gas pressure on the performance of W/Si multilayers

The effect of Ar pressure on the performance of W/Si multilayers is investigated. W/Si multilayers were deposited by a high vacuum DC magnetron sputtering system. The Ar pressure was changed from 1.0 to 5.0 mTorr with an interval of 1.0 mTorr during the deposition process. Electron probe microanalysis and Rutherford backscattering are performed to determine the Ar content incorporated within these multilayers. The results demonstrate that less Ar is incorporated within the sample when more Ar is used in the plasma, which could be explained by the increase of the collision probability and the decrease in the kinetic energy of Ar ions arriving at the substrate when more Ar exists. The grazing incident X-ray reflectivity (GIXR) at 0.154 nm is used to determine the structural parameters of the layers. The results show that the structures of these multilayers prepared at different Ar pressure are very similar and that the interface roughness increases quickly when the Ar pressure is higher than 3.0 mTorr. The measurements of the extreme ultraviolet (EUV) reflectivity indicate that the reflectivity decreases when Ar pressure increases. The fitting results of GIXR and EUV reflectivity curves indicate that with an increase of Ar pressure, the density and decrement of the refractive index are increased for W and decreased for Si, which is mainly due to (1) the decrease in Ar content incorporated within these multilayers which affects their performance and (2) the increase of collision probability for sputtered W and Si, the decrease of their average kinetic energy arriving at the substrate, and thus the loosing of their layers.     

用于平面靶X射线诊断的1维KBA显微镜

对用于神光Ⅱ装置4.75 keV能点平面靶成像诊断的1维KBA显微镜进行了实验研究。基于空间分辨力和工作环境要求,设计了1维KBA显微镜的光学结构,并与传统KB显微镜的成像性能进行了对比分析。设计和制备了可同时工作于8 keV和4.75 keV能点的双能点多层膜KBA物镜,解决了系统装调问题。利用神光Ⅱ装置第九路激光打击Ti靶产生的X射线作为背光源照射1 500目金网,进行了4.75 keV网格成像实验,结果表明:在整个背光源照明区域内,系统的实际分辨力约为4 m,系统的有效视场受背光源大小的限制。     

低原子序数材料窄带多层膜的研制

为研制极紫外波段窄带多层膜反射镜,采用低原子序数材料组合设计了30.4 nm波长处Mg/SiC,Si/SiC,Si/B4C和Si/C多层膜反射镜,并与极紫外波段传统的Mo/Si多层膜反射镜进行对比。采用直流磁控溅射技术制备了这些多层膜,在国家同步辐射实验室辐射与计量光束线完成了多层膜反射率测量,测量结果表明:Mg/SiC多层膜的带宽最小,为1.44 nm,且反射率最高,为44%;而Mo/Si多层膜的反射率仅为24%,带宽为3.11 nm。实验结果证明了采用低原子序数材料组成的多层膜的带宽要比常规多层膜窄,该方法可以应用于极紫外波段高分辨研究。