中能重离子微束辐照装置的真空窗

为了辐照生物活细胞,束流须经由真空隔离窗引入大气环境中.在真空隔离窗的设计中,对结构、材料种类及其厚度的选择既要尽可能地减小束斑展宽,又要兼顾安全性.应用有限元分析软件对不同结构、不同材料的真空窗进行受力分析,模拟真空窗的形变和等效应力,运用强度理论考察候选真空窗的安全性;并运用SRIM程序模拟离子的小角散射、横向射程,计算入射离子的能量、真空窗材料及其厚度、空气层对束斑展宽的影响;最后提出真空窗适宜的结构、材料及厚度范围.     

非定常粒子输运蒙特卡罗并行算法研究

蒙特卡罗方法应用于粒子输运求解已是众所周知的事，然而由于MC的误差与跟踪的样本数的平方根成反比，通常要达到误差要求，需要模拟大量粒子历史，从而花费大量的计算时间。特别对非定常粒子输运问题的MC模拟，需要模拟上万个时间步，每步需要跟踪上百万个粒子。由于粒子寿命远超过时间步步长，因此，上个时间步剩余粒子的广播和本时间步剩余粒子状态量的汇总，I/O需求量大，成为制约并行的瓶颈。     

多壁碳纳米管修饰电极测定氨氯地平

氨氯地平;伏安测定;碳纳米管;化学修饰电极     

用肖特基电容电压特性数值模拟法确定调制掺杂Al_xGa_(1-x)N/GaN异质结中的极化电荷

研究发展了用肖特基电容 电压特性数值模拟确定调制掺杂AlxGa1 -xN GaN异质结中极化电荷的方法 .在调制掺杂的Al0 2 2 Ga0 78N GaN异质结上制备了Pt肖特基接触 ,并对其进行了C V测量 .采用三维费米模型对调制掺杂的Al0 2 2 Ga0 78N GaN异质结上肖特基接触的C V特性进行了数值模拟 ,分析了改变样品参数对C V特性的影响 .利用改变极化电荷、n AlGaN层掺杂浓度和肖特基势垒高度对C V曲线不同部分位置和形状影响不同 ,可以精确地求取极化电荷面密度 .通过模拟 ,得到Al0 2 2 Ga0 78N厚度为 45nm的调制掺杂Al0 2 2 Ga0 78N GaN异质结界面附近极化电荷面密度为 6 78× 10 1 2 cm- 2 .     

Pb(Zr0.53Ti0.47)O3/AlxGa1-xN/GaN异质结构的电容-电压特征

通过在调制掺杂Al0.22Ga0.78N/GaN异质结构上淀积Pb(Zr0.53Ti0.47)O3(PZT)铁电薄膜,我们发展了一种基于AlxGa1-xN/GaN异质结构的金属-铁电-半导体(MFS)结构.在高频电容-电压(C-V)特性测量中,发现Al0.22Ga0.78N/GaN异质界面二维电子气(2DEG)的浓度在-10V偏压下从1.56×1013cm-2下降为5.6×1012cm-2.由于PZT薄膜的铁电极化,在-10V偏压下可以观察到宽度为0.2V的铁电C-V窗口,表明在没有铁电极化方向反转的条件下,PZT/AlxGa1-xN/GaN MFS结构也能出现存储特性.因为2DEG带来的各种优点,可以认为AlxGa1-xN/GaN异质结构在以存储器为目标的MFS场效应晶体管中有重要应用.     

电容-电压法研究AlxGa1-xN/GaN异质结压电极化效应

制备了基于调制掺杂Al0.22Ga0.78N/GaN异质结的Pt/Al0.22Ga0.78N/GaN肖特基二极管.由于Al0.22Ga0.78N势垒层中的极化场不同,不同Al0.22Ga0.78N势垒层厚度的二极管的电容-电压特性显著不同.根据对样品电容-电压特性的数值模拟,在Al0.22Ga0.78N势垒层厚度为30nm和45nm的样品中,异质界面的极化电荷面密度为6.78×1012cm-2.在Al0.22Ga0.78N势垒层厚度为75nm的样品中,极化电荷面密度降为1.30×1012cm-2.这种极化电荷面密度的降低是由于GaN上Al0.22Ga0.78N势垒层由于厚度增加而产生应变的部分弛豫.本工作也提供了一种定量表征AlxGa1-xN/GaN异质结中极化电荷面密度的方法.     

离子径迹模板法制备纳米线

重离子辐照的高分子有机膜,经过适当的处理,可以作为模板制备金属和可溶性盐纳米线,此方法称为离子径迹模板法。介绍了用电化学沉积方法和过饱和溶液法制备金属纳米线和可溶性盐纳米线的基本原理和制各实例,同时还展望了离子径迹模板法制备纳米线的一些可能的应用。The polymer foils irradiated by heavy ions can be used as temptates to prepai nanowires and some inorganic salt nanowires. It is called ＂ion-track template method＂. Compared to other templates, such as AAO template and porous silicon, etched ion-track template is more convenient and flexible. The density of the pores can be easily controlled by changing the ion fluences and the diameter of the pores can be altered through changing the etching condition. The pores of the etched ion-track template are well aligned. We present some examples of preparing metallic nanowires and inorganic salt wires by electrochemical deposition and by supersaturation solution method, respectively. We also introduce some applications of nanowires prepared with ion-track template method.     

Parameter identification and synchronization of an uncertain Chen chaotic system via adaptive control

A systematic design process of adaptive synchronization and parameter identification of an uncertain Chen chaotic system is provided.With this new and effective method,parameter identification and synchronization of the Chen system,with all the system parameters unknown,can be achieved simultaneously.Theoretical proof and numerical simulation demonstrate the effectiveness and feasibility of the proposed method.     

Tracking control and synchronization of chaotic systems based upon sampled—data feedback

A novel tracking control and synchronization method is proposed based upon sampled-data feedback.This method can make a chaotic system approach any desired smooth orbit and synchronize the driving system and the response system,both in the same structure and in diverse structures.Finally,a numerical simulation with a Lorenz system is provided for the purpose of illustration and verification.     

Implementation and verification of different ECC mitigation designs for BRAMs in flash-based FPGAs

Embedded RAM blocks(BRAMs) in field programmable gate arrays(FPGAs) are susceptible to single event effects(SEEs) induced by environmental factors such as cosmic rays, heavy ions, alpha particles and so on. As technology scales, the issue will be more serious. In order to tackle this issue, two different error correcting codes(ECCs), the shortened Hamming codes and shortened BCH codes, are investigated in this paper. The concrete design methods of the codes are presented. Also, the codes are both implemented in flash-based FPGAs. Finally, the synthesis report and simulation results are presented in the paper. Moreover, heavy-ion experiments are performed,and the experimental results indicate that the error cross-section of the device using the shortened Hamming codes can be reduced by two orders of magnitude compared with the device without mitigation, and no errors are discovered in the experiments for the device using the shortened BCH codes.