30MeV/u 40Ar引起的反应中核温度参数的提取

利用同位素产额比方法,提取了30MeV/u ⁴⁰Ar轰击⁵⁸Ni,⁶⁴Ni和¹¹⁵In的反应中中等质量碎片(IMFs:3≤Z≤8)的发射体的核温度参数,给出了“表观”温度与一些物理量的依赖关系以及对边馈(side-feeding)效应的影响进行修正后的温度参数. 并就此进行了简单的讨论.     

80.9MeV 16O+27Al能量耗散和核子交换的关系

用带ΔE-E望远镜系统的飞行时间系统测量了80.9MeV ¹⁶O+²⁷Al反应出射产物的三重微分截面d³σ/dA dZ dE.对该反应中所出现的能量耗散和核子交换的关系进行了讨论.     

19F+51V耗散反应同位素类弹碎片的截面涨落

采用飞行时间(TOF)加△E-E探测系统,在102.25-109.50MeV(能量步长为250keV)的¹⁹T+⁵¹V反应中,第一次给出了耗散碰撞同位素产物的激发函数,讨论了双核系统的能量相干宽度Γ与产物的质量数A和Γ与产物的中子过剩自由度N/Z的依赖关系.     

14N+58Ni和14N+64Ni深部非弹性反应产物同位素分布的差异

实验测得¹⁴N(93兆电子伏)+⁵⁸Ni、⁶⁴Ni深部非弹性反应产物同位素分布, 发现这两者存在系统性的差异.     

计算光学传递函数的一个新方法

从基尔霍夫衍射积分出发,导出计算OTF的新公式。在数值方法上采取一系列措施以提高精度和减少计算量。     

一个数学期望的几种求解方法

利用概率论方法、测度变换方法、偏微分方程的变量代换法、Green函数法、Fourier变换法,给出了一个期望E(e-r(T-t)(ST-K)+|St=S)的几种求解方法.     

食物受限人口模型中非线性延迟微分方程数值解的振动性

本文讨论食物受限人口模型中的一个非线性延迟微分方程数值解的振动性.通过应用两种θ-方法,即线性θ-方法和单腿θ-方法,构造指数θ-方法,得到数值解振动的条件,进一步考虑非振动解的渐近行为,最后给出两个数值算例.     

Quadratic nonlinear response to 1.56-μm continuous wave laser in semi-insulating GaAs

The nonlinear photoresponse to a 1.56μm infrared continuous wave laser in semi-insulating （SI） galliu- marsenide （GaAs） is examined. The double-frequency absorption （DFA） is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the Dhotocurrent and dark current     

First-Principles Calculations of Electronic Structures of New Ⅲ-Ⅴ Semiconductors： BxGa1-xAs and TlxGa1-xAs alloys

We investigate the electronic structures of new semiconductor alloys BxGa1-xAs and TlxGa1-xAs, employing first-principles calculations within the density-functional theory and the generalized gradient approximation. The calculation results indicate that alloying a small TI content with GaAs will produce larger modifications of the band structures compared to B. A careful investigation of the internal lattice structure relaxation shows that significant bond-length relaxations takes place in both the alloys, and it turns out that difference between the band-gap bowing behaviours for B and TI stems from the different impact of atomic relaxation on the electronic structure. The relaxed structure yields electronic-structure results, which are in good agreement with the experimental data. Finally, a comparison of formation enthalpies indicates that the production Tlx Ga1-xAs with TI concentration of at least 8% is possible.     

氮氧烯丙基正离子与肟的[3+3]环加成反应:2-N-无取代-1,2,4-噁二嗪-5-酮类化合物的合成

首次实现了肟与氮氧烯丙基正离子的[3+3]环加成反应,为2-N-无取代-1,2,4-噁二嗪-5-酮类化合物的合成提供了一种有效方法.该方法具有原料易得、反应条件温和及收率高等优点.