Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

<正>In order to investigate their electrical characteristics,high-voltage light-emitting-diodes(HV-LEDs) each containing four cells in series are fabricated.The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors(IFs) of the HV-LEDs with different numbers of cells are 1.6,3.4,4.7,and 6.4.IF increases linearly with the number of cells increasing.Moreover,the performance of the HV-LED with failure cells is examined.The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell.The series resistance of the failure cell is 76.8Ω,while that of the normal cell is 21.3Ω.The scanning electron microscope(SEM) image indicates that different metal layers do not contact well.It is hard to deposit the metal layers in the deep isolation trenches.The fabrication process of HV-LEDs needs to be optimized.     

感应耦合等离子体刻蚀在聚合物光波导制作中的应用

提出了利用感应耦合等离子体(ICP)刻蚀技术提高聚合物光波导器件性能的方法,介绍了ICP刻蚀技术的原理和优点。选取聚甲基丙烯酸甲酯-甲基丙烯酸环氧丙酯(P(MMA-GMA))作为波导材料,采用氧气作为刻蚀气体,研究了ICP参数变化对刻蚀效果的影响。介绍了倒脊形光波导的制备过程,采用改变单一工艺参数的方法,分析了刻蚀效果随时间、功率、压强、气体流量等参数的变化,对参数优化后刻蚀得到的凹槽和平板结构进行了表征。实验结果表明:在天线射频功率为300 W,偏置射频功率为30 W,气体压强为0.5 Pa,氧气流速为50 cm³/min的条件下,可获得侧壁陡直、底面平整的P(MMA-GMA)凹槽结构。     

超细纳米Pd粒子与聚乙烯吡咯烷酮的相互作用

在微量聚乙烯吡咯烷酮(PVP)存在下, 利用超声还原氯化钯水溶液, 制备出超细纳米Pd颗粒, 用高分辨透射电镜、红外光谱、紫外-可见光谱和X射线光电子能谱等技术对其表面形貌及结构进行了表征. 结果表明, 纳米Pd粒子的粒径均一, 大约为3 nm. 纳米Pd/PVP复合粉末的羰基红外吸收峰比PVP的羰基吸收峰红移9 cm^-1; 且当超声反应50 min时, PVP紫外吸收波峰蓝移16 nm, 表明了纳米Pd与PVP之间存在一定的相互作用力. XPS结果证明, 纳米Pd与PVP的羰基基团通过配位作用使超细纳米Pd粒子得以稳定分散存在.     

Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

In this paper AlGaInP light emitting diodes with different types of electrodes:Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 ·cm2 and 1.743×10-3 ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.     

ULTRAHIGH DATA DENSITY STORAGE WITH SCANNING TUNNELING MICROSCOPY

Ultrahigh density data storage devices made by scanning probe techniques based on various recording media and their corresponding recording mechanisms, have attracted much attention recently, since they ensure a high data density in a non-volatile, erasable form in some kinds of ways. It is of particular interest to employ organic polymers with novel functional properties within a single molecule (or a single molecular complex) for fabricating electronic devices on a single molecular scale. Here, it is reported that a new process for ultrahigh density and erasable data storage, namely, molecular bistability on an organic charge transfer complex of 3-nitrobenzal malononitrile and 1,4-phenylenediamine (NBMN-pDA) switched by a scanning tunneling microscope (STM). Data density exceeds 10¹³ bits/cm² with a writing time per bit of ～1μs. Current-voltage (I/V) measurements before and after the voltage pulse from the STM tip, together with optical absorption spectroscopy and macroscopic four-probe I/V measurements demonstrate that the writing mechanism is conductance transition in the organic complex. This mechanism offers an attractive combination of ultrahigh data density coupled with high speed. The ultimate bit density achievable appears to be limited only by the size of the organic complex, which is less than 1nm in our case, corresponding to 10¹⁴ bits/cm². We believe that provided the lifetime can be improved, molecular bistability may represent a practical route for ultrahigh density data storage devices.     

钙钛矿型稀土锰氧化物La0.7Sr0.3FexMn1—xO3的磁性和巨磁电阻效应

采用溶胶-凝胶工艺制备了La     

高效液相色谱法分析生物样品中的敌鼠

 研究用阴离子交换、氰基及硅胶柱固相萃取技术分离提取血、尿、肝及肾中的敌鼠。以香豆素作内标 ,用高效液相色谱 二极管阵列检测器方法进行分离鉴定。色谱条件 :分析柱为HypersilBDSC18(5 μm ,15 0mm× 4 6mmi.d .) ,保护柱为PhenomenexODS(4mm× 3 0mmi.d .) ;流动相 :A为 0 5 %离子对A水溶液 ,B为 0 5 %离子对A甲醇溶液 ,以梯度淋洗程序分离 ;检测波长为 2 86nm。当敌鼠的质量浓度在 1mg/L～ 10 0mg/L范围时 ,其浓度同其峰面积与内标物的峰面积之比有良好的线性关系 (r=0 9999) ,最小检出限量为 5ng(按S/N =3计 )。     

校正矩阵同时分光光度法测定人发中钙、镁、锌

将校正矩阵计算法应用于分光光度法中,同时测定了人发中的钙镁锌含量。讨论了方法原理和最佳实验条件,对４个发样和模拟样进行了测定,取得满意结果。     

铬(Ⅵ)-三溴偶氮胂-HNO3催化动力学光度法测定痕量铬的研究

研究了铬（Ⅵ）对硝酸氧化三溴偶氮胂（ＴＢＡＡ）褪色反应的催化作用及其动力学分析,建立了测定痕量铬的新方法。检出限可达ｎｇ级,线性范围０－２．５μｇＣｒ（Ⅵ）／５０ｍＬ,表观摩尔吸光系数５．４＊１０＾５Ｌ．ｍｏｌ＾－１．ｃｍ＾－１。方法简便,灵敏、快速、准确,已用于铸铁标样和人发样品中痕量铬的测定,结果满意。     

新手性化合物－龙脑基氨基醇的合成

以天然d-樟脑的衍生物为原料,合成了两种龙脑基氨基醇,其方法简单,化学收率高。对中间体及目标化合物结构及物理性质作了表征。