Triple-differential cross section for single ionization of H2 by electron impact

The triple-differential cross section (TDCS) for the (e,2e) ionization of a hydrogen molecule is calculated using the molecule distorted-wave Born approximation (MDWBA). Distorted waves are obtained by solving momentum-space coupled-channel Lippmann-Schwinger equations, including the ground state and the lowest-lying electronic state of b3Σu . TDCSs at the incident energy 100 eV in coplanar asymmetric geometry are reported. The present calculations are compared with the available experimental measurements and the theoretical results.     

ZIF-8/改性聚丙烯腈电纺纳米纤维的制备及其高效去除水中孔雀石绿

通过原位生长方法,将最常见的金属有机骨架(MOFs)——沸石咪唑酯骨架材料(ZIF-8)固定到羧甲基化聚丙烯腈静电纺丝纳米纤维(PAN-COOH NFs)表面,得到ZIF-8/PAN-COOH NFs。通过扫描电子显微镜(SEM)、能量色散光谱(EDS)、X射线粉末衍射(XRD)和傅里叶变换红外光谱(FTIR)对合成的ZIF-8/PAN-COOH NFs形貌和结构进行表征,并深入研究ZIF-8/PAN-COOHNFs从废水中去除孔雀石绿(MG)的性能。研究发现： ZIF-8/PAN-COOH NFs对MG的吸附符合拟二级动力学方程,吸附过程可采用Langmuir等温线模型拟合,其对MG的最大吸附容量可达3 604 mg·g^-1。此外,ZIF-8/PAN-COOH NFs在染料吸附实验中表现出良好的分离功能和重复利用性。     

纳米ZnO光伏特性分析

利用表面光电压谱(SPS)和瞬态光伏(TRP)技术研究了纳米ZnO的光生电荷行为, 发现TRP曲线时域为10^-9~10^-7和10^-6~10^-3 s时样品的SPS在320~380 nm处出现光伏响应, 时域为10^-3~10^-1 s时样品的SPS在380~420 nm处出现光伏响应. 这3个时域分别对应着纳米晶本征响应、 晶间电荷转移和纳米晶表面态电荷捕获等过程. 光生电荷密度足够大或受外部电场影响时在300~320 nm区间也出现光伏响应.     

5,8-二取代吲哚里西丁毒青蛙生物碱的合成

建立了一种以Michael共轭加成为关键步骤, 高立体选择性合成5,8-二取代吲哚里西丁生物碱的方法, 同时对5,8-二取代吲哚里西丁毒青蛙生物碱(-)-203A, (-)-209B, (-)-235B″, (-)-231C, (-)-233D, (-)-219F, (-)-221I, (-)-193E(Proposed), (-)-251N和221K(Proposed)进行了全合成, 确定了203A和233D的绝对构型及231C, 219F, 221I和251N的相对构型. 另外, 对193E(Proposed)的结构提出了订正方案.     

氨基功能化KIT-6两步后嫁接制备及其吸附Pb2+性能

以正硅酸乙酯作为硅源,三嵌段共聚物P123作为模板剂制备介孔材料KIT-6。再采用后嫁接法,先将3-氯丙基三甲氧基硅烷嫁接到KIT-6上,再用聚乙烯亚胺(PEI)进一步嫁接,合成出PEI功能化的PEI/KIT-6。用傅立叶变换红外光谱分析(FTIR)、X射线衍射(XRD)、热重分析(TGA)、元素分析、N_2吸附-脱附、扫描电镜等手段进行结构的表征。用电感耦合等离子体光谱(ICP)测定材料的Pb~(2+)吸附性能。结果表明氨基的表面平均负载量为0.374 mmol·g~(-1),并且改性后KIT-6仍具有高度有序性,并未出现孔道堵塞的现象。PEI/KIT-6在投加量为1 g·L~(-1),室温条件下,吸附100 mg·L~(-1) Pb~(2+)的最佳p H值为6.0;吸附容量伴随温度的提高先增加后减小,最佳反应温度为35℃;材料在120 min内可以达到吸附平衡,吸附过程符合拟二级动力学方程;Langmuir和Freundlich模型均能较好地描述该吸附过程。吸附倾向于发生单分子层的化学吸附。     

Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

Anode floating voltage is predicted and investigated for silicon drift detectors （SDDs） with an active area of 5 mm2 fabricated by a double-side parallel technology. It is demonstrated that the anode floating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode floating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage （-50 V） of the SDD. Theoretical analysis and experimental results show that the anode floating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p＋ inner ring and the n＋ anode. A fast checking method before detector encapsulation is proposed by employing the anode floating voltage along with checking the leakage current, potential distribution and drift properties.     

基于纳米压痕法的多孔硅硬度及杨氏模量与微观结构关系研究

采用电化学腐蚀制备多孔硅，利用场致发射扫描式电子显微镜(field emission scanning electron microscope，FESEM)观测多孔硅的二维微观形貌，利用Nano Indenter XP中的纳米轮廓扫描仪组件(nano profilometry, NP)得到其三维拓扑分析图像，分析了微观结构差异的原因并讨论了多孔硅内部微观结构对其机械性能的影响；利用MTS Nano Indenter XP纳米压入测量仪器，研究了多孔硅的显微硬度和杨氏模量随压入深度的变化规律，比较了不同孔隙率多孔硅的机械性能差别.实验结果测得40mA/cm²，60mA/cm²，80mA/cm²和100mA/cm²四个不同腐蚀电流密度条件下制备多孔硅样品的孔隙率在60%—80%范围内，孔隙率随着腐蚀电流密度的增加而增大；在氢氟酸(HF)浓度为20%的条件下制备出多孔硅样品的厚度在40μm—50μm范围内；测得多孔硅的平均硬度、平均杨氏模量分别在0.478GPa—1.171GPa和10.912GPa—17.15GPa范围内，并且其数值随腐蚀电流密度的增加而减小，在纳米硬度范围内随压入深度的增加而减小，在显微硬度范围内其数值保持相对恒定，分析了样品表面、厚度、微观结构，及环境对其机械性能的影响，得到了多孔硅力学性能随其微观尺度形貌的变化规律. 关键词： 多孔硅 微观结构 硬度 杨氏模量     

Alternating-Current Conductivity for a Two-Channel Interacting Quantum Wire

We investigate theoretically the ac conductivity of a dean two-channel spinless quantum wire in the presence of both short-ranged intra- and inter-channel electron-electron interactions. In the Luttinger-liquid regime, we formulize the action functional of the system with an external time-varying electric field. The obtained expression of ac conductivity for the system within linear response theory is generally an oscillation function of the interaction strength, the driving frequency as well as the measured position in the wire. The numerical examples demonstrate that the amplitude of ac conductivity is renormalized by the both interactions, and the dc conductivity of the system with inter-channel interaction is smaller than that without inter-channel interaction.