氨基酸合成方法研究—(XI)N-取代亚氨酸酯与芳醛缩合产物—去氢氨基酸衍生物的构型及其NMR研究

通过~1H NMR、NOE差谱和门控去偶~(13)C NMR等的研究确定了新合成的五对α-去氢氨基酸衍生物的构型,并利用部分弛豫、APT~(13)C NMR二维碳氢相关谱及~(13)C-~(19)F偶合常数等对NMR谱线进行了归属.     

一种基于荧光猝灭原理的光纤氧气传感器

用钌 (Ⅱ ) 邻菲咯啉配合物作为指示剂 ,研制成功一种基于荧光猝灭原理的光纤氧气传感器。采用锁相放大技术 ,实现了对弱荧光信号的检测。该传感器的检测下限为 5× 10 -6,检测精度为 5× 10 -7,响应时间T≤ 10s,并具有较强的抗干扰能力、较好的重复性和稳定性。     

复合材料层合板的低速冲击损伤及其剩余压缩强度研究

本文采用理论和实验方法研究了复合材料层合板的低速冲地及其剩余压缩强度。文中利用有限元方法和能量转换原理计算了层合板受到低速冲击的受载最危险状态，以及此时的应力分布；并用Ｔｓａｉ－Ｗｕ张量准则判断损伤情况，对产生损伤的单元进行相应的刚度折减，且作重复计算直至不产生新的损伤为止；最后，对受冲击的层合板还进行剩余压缩强度计算。在实验中，采用激光全息无损检测法测量了层合板的冲击损伤，并对受冲击的层合板进行     

双分布聚乙二醇接枝纳米二氧化硅的高效可控制备

在混合溶剂中通过"grafting to"的方法将2种分子量不同的聚乙二醇单甲醚(MPEG M_w=750,4000)接枝到氨基修饰的St?ber法二氧化硅(SiO_2-NH_2)表面,制备双分布纳米接枝复合物.采用二步法,先将带环氧端基的低分子量聚乙二醇单甲醚(MPEG-EO)与SiO_2-NH_2在甲苯溶剂中充分反应后,与高分子量的MPEG-EO在甲苯和正癸烷的混合溶剂中使用相同的反应条件和后处理方法,能便捷制备出具有双分布接枝的纳米复合物.在接枝反应体系中,分子链的链段尺寸和接枝密度之间存在着密切关系.一定的范围内,接枝密度随链段尺寸减小而增大.通过改变混合溶剂比例来调控接枝链段的尺寸,可以很好控制聚合物的接枝密度.在双分布接枝的纳米复合物中,低分子量的接枝密度为0.85 chains/nm~2,高分子量的接枝密度能达到0.40 chains/nm~2,体现出了简单、高效、可控的特点,与聚环氧乙烷(PEO)共混后分散良好,对于制备出均匀分散的纳米复合材料起到了一定的指导作用.     

正交异性板条的渐近分析

本文阐明由三维薄弹性体的渐近分析导出各级精度板壳理论的基本方法。将多尺度分析用于板的内部区域和边界层区域导出应力,应变和位移等物理量的不同的无量纲小厚度参数ε的渐近展开式。与工程的方法不同,推导仅基于ε→0的渐近分析,对板的变形不做任何假定。给出正交异性板的平面应变渐近展开的具体列式,仅有一些常数待定。结果表明,内域解渐近级数的首项正是熟知的Kirchhoff板理论解。本文为内域解和边界层解的渐近匹配,从而正确表述圣维南原理并用以建立各级渐近解的边界条件进而求解的研究做好了准备。     

假定螺栓直径的优选法

本文应用“优选法”即黄金分割法的原理，确定螺栓的假定直径，大大提高了螺栓的设计效率．     

磁共振现代射频脉冲理论在非均匀场成像中的应用

在磁共振非均匀场成像中，传统的射频脉冲导致回波信号的衰减.为了减小和消除这种磁共振信号的衰减，在讨论了经典理论的基础上根据非线性动力学中的逆散射理论和Shinnar-Le Roux方法导出了用于非均匀场成像的射频脉冲设计方法.模拟结果表明，采用逆散射理论和Shinnar-Le Roux方法优化的脉冲序列可以明显提高信号的信噪比. 关键词： 磁共振成像 射频脉冲 非线性系统     

新型含氟α-氨基膦酸酯的合成和晶体结构

利用含氟苯基亚胺与亚磷酸酯反应,合成了新型含氟α-氨基膦酸酯,通过元素分析、红外光谱、质谱、核磁共振氢谱对其结构进行了表征.X射线单晶衍射测试结果表明:化合物为三斜晶系,空间群P1,a=1.0178(6)nm,b=1.0354(6)nm,c=2.2534(13)nm,α=77.413(10)°,β=78.340(10)°,y=77.540(10)°,V=2.233(2)nm3,Z=4,Dc=1.289 Mg·m-3,μ=O.175 mm-1,F(000)=904.0,最终偏离因子R=0.0728,wR=0.1724.     

Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy

Based on our previous work,the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg 1 x Cd x Te (x ≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra.The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature,commonly assumed to be more favourable for As activation,has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x ≈ 0.39),(ii) the density of V Hg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of V Hg will lead to a short-wavelength shift of epilayers,and (iii) the V Hg prefers forming the V Hg-As Hg complex when the inactivated-As (As Hg or related) coexists in a certain density,which makes it difficult to annihilate V Hg in As-doped epilayers.As a result,the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.     

A self-powered and sensitive terahertz photodetection based on PdSe2

With the rapid development of terahertz technology, terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging, materials diagnostics, biology, medical sciences, and communication. Whereas self-powered, rapid response, and room temperature terahertz photodetectors are confronted with huge challenges. Here, we report a novel rapid response and self-powered terahertz photothermoelectronic (PTE) photodetector based on a low-dimensional material: palladium selenide (PdSe₂). An order of magnitude performance enhancement was observed in photodetection based on PdSe₂/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect. Under 0.1-THz and 0.3-THz irradiations, the device displays a stable and repeatable photoresponse at room temperature without bias. Furthermore, rapid rise (5.0 μs) and decay (5.4 μs) times are recorded under 0.1-THz irradiation. Our results demonstrate the promising prospect of the detector based on PdSe₂ in terms of air-stable, suitable sensitivity and speed, which may have great application in terahertz detection.