Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy |
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| Authors: | Yue Fang-Yu Chen Lu Li Ya-Wei Hu Zhi-Gao Sun Lin Yang Ping-Xiong and Chu Jun-Hao |
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| Institution: | Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | Based on our previous work, the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg1-xCdxTe (x≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra. The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature, commonly assumed to be more favourable for As activation, has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x≈ 0.39), (ii) the density of V_textrmHg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of VHg will lead to a short-wavelength shift of epilayers, and (iii) the V_textrmHg prefers forming the VHg-AsHg complex when the inactivated-As (AsHg or related) coexists in a certain density, which makes it difficult to annihilate VHg in As-doped epilayers. As a result, the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices. |
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| Keywords: | As-doped HgCdTe annealing influence extrinsic/intrinsic impurities modulated photoluminescence spectra |
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