基于“零和收益”的SBM效率分配方法及应用

在松弛变量度量(slacks-based measure,SBM)效率评价方法的基础上,首先明确投入(产出)要素固定的生产系统中,投入(产出)要素在各决策单元间的竞争性关系;然后采用比例分配策略对SBM无效决策单元的投入(产出)松弛进行效率分配,以构建一个基于零和收益的SBM(zero sum gains SBM,ZSG-SBM)效率分配方法;再通过分析ZSG-SBM模型与SBM模型效率评价结果的关系,给出了比例分配策略ZSG-SBM模型的求解方法;最后应用实例研究验证了本文模型在要素存在竞争性的复杂生产系统效率评价和资源分配中的优势。     

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

Physical implications of the activation energy derived from temperature dependent photoluminescence(PL) of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in In Ga N materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves.     

The residual C concentration control for low temperature growth p-type GaN

In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied.Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration:(i) the C concentration decreases with the increase of growth pressure;(ii) we have found there exists a Ga memory effect when changing the Cp_2 Mg flow which will lead the growth rate and C concentration increase along the increase of Cp_2 Mg flow;(iii) annealing outside of metal–organic chemical vapor deposition(MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.     

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In_xGa_(1-x )N/GaN multiple-quantumwell(MQW) laser diode(LD), the Al composition of inserted p-type AlxGa_(1-x)N electron blocking layer(EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In_(0.04)Ga_(0.96)N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type Al_xGa_(1-x)N hole blocking layer(HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of Al_xGa_(1-x)N HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of Al_xGa_(1-x)N HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.     

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

Room-temperature operation of cw GaN based multi-quantum-well laser diodes （LDs） is demonstrated. The LD structure is grown on a sapphire （0001） substrate by metalorganic chemical vapour deposition. A 2.5μm × 800μm ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern （FFP） are 12° and 32°, respectively.     

一道解三角形高考试题的解法思索与延伸探究

对一道解三角形高考试题进行研究,先给出该题的解法,再对其进行探究延伸,不断追问,巧妙联想,逐步提出新的变式问题,进而内化数学思维,提升数学核心素养,激发学生学习数学的兴趣.     

FORMATION AND MAGNETIC PROPERTIES OF A NOVEL Gd3(Fe,Ti)29Ny NITRIDE

The novel Gd₃(Fe_0.978Ti_0.022)₂₉ compounds and their nitride have been synthesized. The X-ray diffraction patterns of the Gd₃(Fe,Ti)₂₉N_y and its parent compounds were indexed in the Nd₃(Fe,Ti)₂₉-type structure with a monoclinic symmetry and space group P2₁/c, Both the nitride and the parent compounds exhibit ferrimagnetlc coupling. Nitrogenatio led to an increase in Curie temperature and saturation magnetization. The Curie temperatures are 517K for the parent and 765K for the nitride. The saturation magnetizations σ_s at 4.2K are 101.9A·m²/kg for the parent and 128A·m²/kg for the nitride. Both the nitride and parent exhibit a planar anisotropy. Nitrogenation led to a decrease of the contribution of Fe-sublattice to planar anisotropy. The anisotropy fields at 4.2K are 9.8T for the parent and 6.5 T for the nitride.     

The effect of single A1GaN interlayer on the structural properties of GaN epilayers grown on Si （111） substrates

High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.     

基于分数阶傅里叶变换混响抑制的目标回波检测方法

提出了一种声呐发射信号为线性调频信号时,基于分数阶傅里叶变换混响抑制的目标回波信号检测方法。通过计算混响的缓慢时变包络,对混响进行时间域的平稳化处理。对平稳化的混响信号滑动窗截取,对截取信号进行分数阶傅里叶变换,然后在分数阶傅里叶域进行滤波处理,再进行逆分数阶傅里叶变换恢复出时间域信号,最后输出该信号的能量。当滑动窗截取到目标回波信号时,窗内的混响噪声得到抑制,系统输出目标回波的能量,从而实现混响背景下的信号检测。通过计算机仿真和湖试实验结果,表明所提方法可以准确的在混响背景下检测到目标回波信号,并且在混响噪声背景条件下相比于匹配滤波器具有更好的检测性能。      

M/V-Al-2O3型催化剂的制备、表征及催化性能研究

采用等体积浸渍法制备了M/γ-Al2O3系列催化剂,M为NaOH、KOH、MgO,通过XRD、BET等测试技术对催化剂进行了表征,并将催化剂应用于二乙醇胺催化脱水制备吗啉反应中,实验考察了修饰剂及负载量、反应温度、压力等对催化剂活性的影响。结果表明,NaOH/γ-Al2O3、KOH/γ-Al2O3、MgO/γ-Al2O3催化剂具有高的催化活性及对吗啉制备的高选择性,其原因是此反应需要中强酸及弱酸中心,强酸中心易使催化剂表面积炭,经过NaOH、KOH、Mg(OH)2修饰的γ-Al2O3其强酸中心减少而中强酸和弱酸中心相应增加,从而提高了催化剂的活性、选择性和稳定性。