Mn掺杂GaN的电子结构及光学性质

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法(PWP)计算Mn掺杂GaN(Ga1-xMnN)晶体的电子结构及光学性质,详细讨论掺杂后电子结构的变化.计算表明,Mn掺杂GaN使得Mn 3d与N 2p轨道杂化,产生自旋极化杂质带,Ga1-xMnxN表现为半金属性,非常适于自旋注入,说明该种材料是实现自旋电子器件的理想材料.另结合实验结果分析掺杂后体系的光学性质,发现吸收谱在1.3 eV处出现吸收峰,吸收系数随Mn2+浓度增加而增大.分析表明,该峰是源于Mn2+离子e态与t2态间的带内跃迁.     

过渡金属元素Sc、Cr和Mn对Mg2Ge掺杂的第一性原理研究

基于密度泛函理论(DFT)的第一性原理计算,研究了过渡金属元素Sc、Cr和Mn掺杂对Mg₂Ge晶体光、电、磁性质的影响。结果表明,Sc掺杂能使Mg₂Ge的费米能级进入导带,呈n型简并半导体;Cr和Mn掺杂能使Mg₂Ge能带结构和态密度在费米能级附近产生自旋劈裂而形成净磁矩,表现为半金属磁体和稀磁半导体,体系净磁矩均来自杂质原子3d轨道电子及其诱导极化的Ge4p态和Mg2p态自旋电子。与本征Mg₂Ge相比,掺杂体系静态介电常数增大,扩展了吸收光谱,提升了近红外光波段吸收能力。     

过渡金属掺杂SnO_2的电子结构与磁性

采用密度泛函理论及赝势平面波方法,对未掺杂SnO_2以及过渡金属V、Cr、Mn掺杂SnO_2的超原胞体系进行了几何优化,计算了晶格常数、电子结构与磁学性质.结果表明,6.25%与12.5%两种掺杂浓度时,体系的电子自旋和磁学性质没有发生很大的变化;相对于未掺杂SnO_2,过渡金属掺杂后SnO_2中O原子有向过渡金属移动的趋势,并使得O与掺杂金属之间键长变短;在V和Cr掺杂后,SnO_2具有半金属性质,而Mn掺杂SnO_2没有发现上述性质.6.25%与12.5%的杂质浓度对自旋和磁矩影响不大,掺杂产生的磁矩主要来自于过渡金属3d电子态,且磁矩的大小与过渡金属的电子排布有关.V、Cr、Mn掺杂SnO_2后的总磁矩分别为0.94μ_B、2.0μ_B、3.00μ_B.磁矩主要来源于过渡金属3d轨道的自旋极化,当O原子出现负磁矩的时候,还有很小一部分磁矩来源于临近过渡金属的Sn原子.     

过渡金属掺杂SnO2的电子结构与磁性

采用密度泛函理论及赝势平面波方法, 对未掺杂SnO2以及过渡金属V、Cr、Mn掺杂SnO2的超原胞体系进行了几何优化, 计算了晶格常数、电子结构与磁学性质. 结果表明, 6.25%与12.5%两种掺杂浓度时, 体系的电子自旋和磁学性质没有发生很大的变化; 相对于未掺杂SnO2, 过渡金属掺杂后SnO2中O原子有向过渡金属移动的趋势, 并使得O与掺杂金属之间键长变短; 在V和Cr掺杂后, SnO2具有半金属性质, 而Mn掺杂SnO2没有发现上述性质. 6.25%与12.5%的杂质浓度对自旋和磁矩影响不大, 掺杂产生的磁矩主要来自于过渡金属3d电子态, 且磁矩的大小与过渡金属的电子排布有关. V、Cr、Mn掺杂SnO2后的总磁矩分别为0.94μB、2.02μB、3.00μB. 磁矩主要来源于过渡金属3d轨道的自旋极化, 当O原子出现负磁矩的时候, 还有很小一部分磁矩来源于临近过渡金属的Sn原子.     

Al轻掺杂对CaMnO_3晶态材料结构与电迁移性质的影响研究

通过电子平面波函数密度泛函理论的计算分析方法系统研究了Ca位Al轻掺杂钙钛矿结构CaMnO_3基晶态材料的晶体结构、电子结构和载流子迁移性质.结果表明,Al轻掺杂使得CaMnO_3基晶态材料的晶格参数增大,在b轴方向上增大程度最高,在c轴方向上增大程度最小.Ca位Al轻掺杂之后,CaMnO_3中的O—Mn—O八面体向2个O顶点方向拉长,八面体产生扭曲变形.Al轻掺杂前后的CaMnO_3基晶态材料均为间接带隙半导体,其带隙宽度分别是0.713和0.695 eV,Al掺杂属于电子型掺杂.经过Al掺杂之后CaMnO_3基晶态材料的导带有效质量大大提高.Al掺杂CaMnO_3基晶态材料费米能以下,p状态态密度最高,s状态态密度最低;在费米能以上,d状态态密度最高,s状态态密度最低.Al掺杂大大提高了CaMnO_3基晶态材料的载流子浓度.CaMnO_3中O—Mn—O八面体中底平面上的O原子电子对载流子迁移过程的贡献大于顶点处的O原子电子贡献程度.     

α-SrMnO3电子结构的第一性原理研究

采用平面波赝势方法对钙钛矿型锰酸盐氧化合物α-SrMnO3的电子结构进行了第一性原理研究. 六方钙钛矿型结构α-SrMnO3化合物为磁性绝缘体, 磁基态对应于共面八面体及共顶点八面体间的磁性交换作用均为反铁磁性(AFM), 其禁带宽度为1.6 eV; 费米能级附近的Mn3d态与O2p态存在很强的杂化作用, 属于共价绝缘体, 这种强共价性使得Mn4+的自旋磁矩偏离理想值. 采用Noodleman的对称性破缺方法, 根据α-SrMnO3不同磁有序态的总能量拟合出α-SrMnO3中的自旋交换耦合常数. α-SrMnO3的局部微结构(Mn—O—Mn)决定了整个体系的特殊磁性交换作用. 共面及共顶点的八面体间均存在AFM交换作用, 并且共顶点八面体间的AFM作用比较强.     

Li掺杂ZnO的电子结构与电性能的研究

采用密度泛函理论平面波超软赝势方法研究了p型Li掺杂的纤锌矿结构ZnO的能带结构、态密度和电荷分布,并分析了Li掺杂ZnO的电输运性能.结果表明,Li掺杂ZnO具有1.6eV的直接带隙,且为p型半导体,体系费米能级附近的态密度大大提高,在导带和价带中都出现了由Li电子能级形成的能带,其费米能级附近的能带主要由Li的s态、Zn的p态、Zn的d态和O的p态电子构成,且他们之间存在着强相互作用.电输运参数和电输运性能分析结果表明,Li掺杂的ZnO氧化物价带和导带中的载流子有效质量均较大;其载流子输运主要由Li的s态、Zn的p态和O的p态电子完成;Li掺杂有望改善ZnO的电输运性能.     

N/F掺杂和N-F双掺杂锐钛矿相TiO2(101)表面电子结构的第一性原理计算

采用密度泛函理论(DFT)平面波赝势方法计算了N/F掺杂和N-F双掺杂锐钛矿相TiO2(101)表面的电子结构. 由于DFT方法存在对过渡金属氧化物带隙能的计算结果总是与实际值严重偏离的缺陷, 本文也采用DFT+U(Hubbard 系数)方法对模型的电子结构进行了计算. DFT的计算结果表明N掺杂后, N 2p轨道与O 2p和Ti 3d价带轨道的混合会导致TiO2带隙能的降低, 而F掺杂以及氧空位的引入对材料的电子结构没有明显的影响. DFT+U的计算却给出截然不同的结果, N掺杂并没有导致带隙能的降低, 而只是在带隙中引入一个孤立的杂质能级, 反而F掺杂以及氧空位的引入带来明显的带隙能降低. DFT+U的计算结果与一些实验测量结果能够较好地符合.     

Mn掺杂TiO_2(101)提高锂空电池阴极催化活性的第一性原理研究

本文基于密度泛函理论对TiO_2(101)和Mn_xTi_(1-x)O_2(101)作为锂空电池阴极催化材料进行了研究,发现其表面能够生成两种不同结构的Li_2O_2,进一步地研究了其中最稳定的生成结构并通过计算锂空电池首次充放电过程中的过电势来评价催化性能.结果表明,Mn掺杂进入Ti O_2(101)对充放电的过电势均有降低作用,深入分析发现掺杂Mn对TiO_2促进阴极催化反应的本质因素源于掺杂原子Mn的d态轨道的分布以及其平均能量.掺杂原子的d态轨道在费米能级处的峰态诱导了附近O的p态轨道,二者共同作用在Mn_xTi_(1-x)O_2(101)的总态密度的费米能级处形成多个新峰,改变了催化剂的导电方式.此外,由于掺杂原子Mn的d态轨道的平均能量高于Ti原子,使得O的p态轨道受到更多的激发,促使在Mn掺杂原子附近的氧空位形成能降低,为放电过程阴极催化反应的氧还原提供了更多的活性位点并且有利于氧气的吸附与还原.     

N／F掺杂和N-F双掺杂锐钛矿相TiO2（101）表面电子结构的第一性原理计算

采用密度泛函理论(DFT)平面波赝势方法计算了N/F掺杂和N-F双掺杂锐钛矿相TiO2(101)表面的电子结构.由于DFT方法存在对过渡金属氧化物带隙能的计算结果总是与实际值严重偏离的缺陷,本文也采用DFT+U(Hubbard系数)方法对模型的电子结构进行了计算.DFT的计算结果表明N掺杂后,N2p轨道与O 2p和Ti 3d价带轨道的混合会导致TiO2带隙能的降低,而F掺杂以及氧空位的引入对材料的电子结构没有明显的影响.DFT+U的计算却给出截然不间的结果,N掺杂并没有导致带隙能的降低,而只是在带隙中引入一个孤立的杂质能级,反而F掺杂以及氧空位的引入带来明显的带隙能降低.DFT+U的计算结果与一些实验测量结果能够较好地符合.     

Energy Stabilities,Magnetic Properties,and Electronic Structures of Diluted Magnetic Semiconductor Zn1-xMnxS(001) Thin Films

We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn_1-xMn_xS(001) thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.     

Electronic structure of A- and B-site doped lanthanum manganites: a combined X-ray spectroscopic study

The electronic properties of a series of colossal magnetoresistance (CMR) compounds, namely LaMnO3, La(1-x)Ba(x)(MnO3 (0.2 < or = x < or = 0.55), La(0.76)Ba(0.24)Mn(0.84)Co(0.16)O3, and La(0.76)Ba(0.24)Mn(0.78)Ni(0.22)O3, have been investigated in a detailed spectroscopic study. A combination of X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES), X-ray absorption spectroscopy (XAS), and resonant inelastic X-ray scattering (RIXS) was used to reveal a detailed picture of the electronic structure in the presence of Ba, Co, and Ni doping in different concentrations. The results are compared with available theory. The valence band of La(1-x)()Ba(x)MnO3 (0 < or = x < or = 0.55) is dominated by La 5p, Mn 3d, and O 2p states, and strong hybridization between Mn 3d and O 2p states is present over the whole range of Ba concentrations. Co-doping at the Mn site leads to an increased occupancy of the e(g) states near the Fermi energy and an increase in the XPS valence band intensity between 0.5 and 5 eV, whereas the Ni-doped sample shows a lower density of occupied states near the Fermi energy. The Ni d states are located in a band spanning the energy range of 1.5-5 eV. XAS spectra indicate that the hole doping leads to mixed Mn 3d-O 2p states. Furthermore, RIXS at the Mn L edge has been used to probe d-d transitions and charge-transfer excitations in La(1-x)Ba(x)MnO3.     

Achieving indirect-to-direct band gap transition and enhanced photocatalytic performance in blue phosphorene through doping and strain

Recently, blue phosphorene (BP) has demonstrated great potential in the field of photocatalytic water splitting due to the ultrahigh carrier mobility. However, the practical application of BP as an efficient photocatalyst is greatly limited by its indirect band gap. In this work, we investigate the synergistic effect of substitutional doping and biaxial strain on the electronic and photocatalytic properties of BP using hybrid density functional calculations. The results show that As/Sb doping not only reduces the band gap of BP without introducing any midgap states but also turns it into direct band gap semiconductor, which can be ascribed to the p states of the dopants appearing around the band edges. For these As/Sb-doped BP systems, the band gaps, band edge positions, and optical absorption abilities can be further tuned by applying a biaxial strain. In particular, we predict that compressive strains are more propitious for the doped systems than the tensile strains since the requirements for water splitting are satisfied, meanwhile preserving the direct band gap characteristics. Besides, our calculations also show that the band gap and the reducing and oxidizing power of multilayer BP are highly dependent on the layer thickness. These results suggest feasible modulation strategies for enabling BP to be a visible-light-driven photocatalyst for water splitting.     

Tuning of NaTaO_3 Band Structure through Mn~（2＋） Ion Doping and the Enhanced Visible Light Response

Pure and Mn-doped NaTaO3 nanoparticles were synthesized by a simple hydro- thermal method. XRD and XPS results suggested that manganese ions were successfully doped into the NaTaO3 crystalline in Mn2＋ state. UV-vis diffuse reflectance spectra revealed the obvious red-shift in the series of manganese doped NaTaO3 nanoparticles, resulting in a decrease in the band gap of NaTaO3 with the increase of Mn2＋ doping concentration. The photo-degradation experiment indicated that manganese doped NaTaO3 showed good photocatalytic performance and methylene blue（MB） degradation is improved with lower doping concentration of manganese ions under visible light. The simulation of energy band structure by density functional theory unfolded that the substitution of Ta5＋ ions by Mn2＋ ions resulted in an intermediate band（IB） below the bottom of the conduction band（CB）, which was mainly attributed to the state of Mn 3d.     

Effect of Nitrogen Substitution in V2O3 on the Metal–Insulator Transition

The effect of N‐doping on the paramagnetic–antiferromagnetic transition associated with the metal–insulator (M–I) transition of V₂O₃ at 150 K has been studied in bulk samples as well as in nanosheets. The magnetic transition temperature of V₂O₃ is lowered to ～120 K in the N‐doped samples. Electrical resistivity data also indicate a similar lowering of the M–I transition temperature. First‐principles DFT calculations reveal that anionic (N) substitution and the accompanying oxygen vacancies reduce the energy of the high‐temperature metallic corundum phase relative to the monoclinic one leading to the observed reduction in Nèel temperature. In the electronic structure of N‐substituted V₂O₃, a sub‐band of 2p states of trivalent anion (N) associated with its strong bond with the vanadium cation appears at the top of the band of O(2p) states, the 3d‐states of V being slightly higher in energy. Its band gap is thus due to crystal field splitting of the degenerate d‐orbitals of vanadium and superexchange interaction, which reduces notably (ΔE_g=?0.4 eV) due to their hybridization with the 2p states of nitrogen. A weak magnetic moment arises in the monoclinic phase of N‐substituted V₂O₃ with O‐vacancies, with a moment of ?1 μ_B/N localized on vanadium atoms in the vicinity of oxygen vacancies.     

Density Functional Theory Study of MoO3 Molecule Encapsulated inside Single-walled Carbon Nanotubes~

The binding energies, geometric structures and electronic properties of molybdenum trioxide (MoO3) molecule encapsulated inside (8,0), (9,0), (10,0) and (14,0) single-walled carbon nanotubes (SWNTs) have been investigated using density functional theory (DFT) method. Due to curvature effect, the calculated binding energy values are different, the variation of which indicated that the stability of MoO3 /SWNT systems increases with increasing the radius of SWNTs. At the same time, owing to the presence of MoO3 molecule, the band gap of MoO3 /SWNTs systems decreases. The analysis of density of states (DOS) reveals hybridization between C-2p and Mo-4d and between C-2p and O-2p orbitals near the Fermi level, which results in electron transfer from SWNTs to MoO3 molecule. The present computations suggest that electronic properties of SWNTs can be modified by doping MoO3 molecule.