新的溶胶-凝胶法制备Ge/SiO2量子点玻璃

以3－三氯锗丙酸和正硅酸乙酯为原料,通过水解、缩聚凝胶热处理及氢气反应,在SiO2凝胶玻璃中析出立方相Ge纳米晶,当x=30时,凝胶玻璃中除了析出立方相Ge纳米晶处,还析出六方相GeO2,利用XRD测试了Ge纳米晶的大小,发现随着掺杂量的增加,纳米颗粒粒径从1nm增大到10nm,电子衍射表明镶嵌在SiO2凝交玻璃中的Ge纳米晶为多晶结构。     

PbF2·SiO2基玻璃陶瓷的溶胶-凝胶制备及结构转变研究

采用溶胶-凝胶法制备了PbF2·SiO2纳米晶玻璃陶瓷块体;利用TG-DSC和IR技术分析了干凝胶在热处理过程中有机基团的分解及内部原子键合方式的演变;结合XRD和TEM研究了凝胶玻璃中PbF2纳米晶粒的长大过程,并分析了Er3+掺杂的影响.结果表明,采用此方法制备的PbF2.SiO2纳米晶粒玻璃陶瓷具有较好的成形性,晶化温度在320℃左右;经480℃热处理,镶嵌在玻璃基体中的PbF2晶粒尺度约为10-25nm,材料透明性良好.在PbF2·SiO2系统中掺入少量的Er3+,将提高PbF2的晶化温度,降低玻璃陶瓷的显微硬度;掺杂可能对PbF2晶粒表面原子的活性起抑制作用,阻碍晶粒的表面迁移,使晶粒的生长速度明显降低.     

PbF_2·SiO_2基玻璃陶瓷的溶胶-凝胶法制备及结构转变研究

采用溶胶-凝胶法制备了 PbF2?SiO2纳米晶玻璃陶瓷块体;利用 TG-DSC 和 IR 技术分析了干凝胶在热处理过程中有机基团的分解及内部原子键合方式的演变;结合 XRD 和 TEM 研究了凝胶玻璃中 PbF2纳米晶粒的长大过程,并分析了 Er3+掺杂的影响。结果表明,采用此方法制备的 PbF2?SiO2纳米晶玻璃陶瓷具有较好的成形性,晶化温度在 320℃左右;经 480℃热处理,镶嵌在玻璃基体中的 PbF2晶粒尺度约为 10～25nm,材料透明性良好。在 PbF2?SiO2系统中掺入少量的 Er3+,将提高 PbF2的晶化温度,降低玻璃陶瓷的显微硬度;掺杂可能对 PbF2晶粒表面原子的活性起抑制作用,阻碍晶粒的表面迁移,使晶粒的生长速度明显降低。     

溶胶-凝胶法制备镶嵌在SiO_2玻璃中的InAs纳米晶

以As2 O3,InCl3·4H2 O和正硅酸乙酯为原料 ,通过水解、缩聚制备了xIn2 O3-xAs2 O3- 10 0SiO2 (x =0 .5～ 7.5 )凝胶 .在氧气中加热到 45 0℃对凝胶热处理使其转化成凝胶玻璃 ,再在 2 0 0～ 5 0 0℃与氢气反应 ,结果在SiO2 凝胶玻璃中形成了立方相InAs.利用XRD测试了InAs纳米颗粒的大小 ,发现随着反应温度的升高及掺杂量的增加 ,InAs纳米颗粒粒径从 6增大到 2 9nm .电子衍射表明凝胶玻璃中的InAs纳米颗粒为多晶结构     

Density Functional Theory Study on the Structural and Electronic Properties of Ge（SiO_2）_n Clusters

The geometry,stability,binding energy and electronic properties of(SiO2)n and Ge(SiO2)n clusters(n = 7) have been investigated by Density functional theory(DFT).The results show that the lowest energy structures of Ge(SiO2)n are obtained by adding one Ge on the end site of the O atom or the Si near end site of the O atom in(SiO2)n.The chemical activation of Ge-(SiO2)n is improved compared with(SiO2)n.The calculated second-order difference of energies and fragmentation energies show that the Ge(SiO2)n clusters with n = 2 or 5 are stable.     

溶胶—凝胶法制备掺Eu^3＋的SiO2玻璃的结构及发光性能

利用溶胶－凝胶技术制备了掺不同量Eu^3 和不同退火温度下的SiO2凝胶和玻璃,通过在不同退火温度下样品的激光发谱,发射光谱,红外光谱和差热－热重曲线,研究了掺Eu3 的SiO2玻璃材料的结构和发光性能,结果显示,当Eu3 的掺杂量大于1．86％（质量分数）,Eu^3 的发光强度趋于稳定,当样品的退火温度大于300度时,SiO2凝胶玻璃中吸附的水已基本除净,此时显示出Eu^3 的特征发射光谱,谱带位置分别是614,596,577nm,分别归属于^5Do-7F2,5D0-7F1,^5D0-^7F0跃迁,对应的激光发光谱显示6个峰,位置分别是318,362,380,393,412,462nm,说明300－500度是凝胶向玻璃转变的关键温度,而水对Eu^3 的发光有强烈的淬灭作用。     

Tb掺杂SiO2-B2O3-NaF玻璃的制备及发光性质

使用正硅酸乙酯、硼酸和氟化钠为前驱体,0.10 mol•L-1TbCl3溶液为掺杂剂,通过溶胶-凝胶方法制备了Tb3＋掺杂的SiO2-B2O3-NaF玻璃,研究了Tb3＋在SiO2-B2O3-NaF体系中的发光性质,结果显示发光体能产生强的绿色发光(544 nm),归属于Tb3＋的5D4—7F5电子跃迁.Tb3＋含量不同时,除发光强度不同外,其发射光谱基本相同,并且在低掺杂Tb3＋样品和低退火温度样品中检测到了来自5D3跃迁产生的峰,其跃迁随Tb3＋掺杂浓度的增加和退火温度的升高而发生猝灭,这种现象归因于5D3－5D47F6—7F0和/或5D3—7F07F6—5D4跃迁中发生了交叉弛豫现象.Tb3＋在SiO2-B2O3-NaF玻璃中的激发光谱由一个宽峰和一系列窄峰组成,宽峰最大波长位于230 nm,对应于Tb3＋的4f 8—4f 75d 1跃迁,一系列窄峰位于300～380 nm处,归属于4f 8跃迁,所有发光材料的XRD和TEM测试显示材料是非晶态的.     

溶胶-凝胶法制备掺Sm3+的SiO2玻璃的结构及发光性能

利用溶胶-凝胶技术制备了掺不同量Sm3+和不同退火温度下的SiO2凝胶和玻璃,通过三维荧光光谱、激发光谱、发射光谱的测试,确定了Sm3+在SiO2凝胶玻璃中的最佳激发波长为360 nm,最强发射波长为610 nm,激发光谱的峰位置在360、393、464 nm处,发射光谱的峰位置在578、591、595、610、732nm处,分别归属于4G5/2-6H5/2、4G5/2-6H7/2、4G5/2-6H11/2跃迁,并证明当掺杂量达到1.15%时,Sm3+的发光最强,当Sm3+的掺杂量超过1.15%时,发生浓度猝灭效应.     

偶联剂原位改性SiO2提高PEO/LiClO4/SiO2电导率

偶联剂原位改性SiO2提高PEO/LiClO4/SiO2电导率;PEO;聚合物电解质;偶联剂;SiO2;电导率     

无机玻璃Li2O·2SiO2的结构松弛(Ⅰ)——TNM唯象模型描述

简介了结构松弛的主要特点及其唯象Tool-Narayanaswamy-Moynihan(TNM)模型的建立,并用此模型对无机玻璃(Li2O·2SiO2)在不同老化时间及不同老化温度下的结构松弛行为进行了模拟.得到了4个可调参数X、β、△h* 和A,其中β、△h* 和A不随老化温度及老化时间而发生变化,X则随老化时间的增加而增大,随老化温度的降低而降低.     

Sol-Gel Synthesis of Ge Nanocrystals-Doped Glass and Its Photoluminescence

Ge nanocrystal-embedded SiO₂ glasses were prepared by a sol-gel process. The glasses synthesized through the hydrolysis of Si(OC₂H₅)₄ and GeCl₄ were heated in H₂ gas atmosphere at 500 to 800°C, in which Ge⁴⁺ ions were reduced to precipitate nanosized Ge crystals with the size smaller than 10 nm diameter. Glasses doped with Ge nanocrystals of diameter of ≈5 nm showed the optical absorption edge at ≈2.8 eV and a broad photoluminescence exhibiting the peak at around 2.2 eV. Large Ge crystals precipitated by heating above 800°C showed no photoluminescence.     

Photoluminescence spectra of clusters of group IV elements embedded in SiO2 matrices

Using a rf co-sputtering technique, SiO₂ films containing C, Si and Ge atoms were prepared and their Raman and photoluminescence spectra were measured. Raman spectra obtained are very broad indicating that the group IV elements are embedded in the form of clusters. The samples containing C clusters showed a very strong photoluminescence peak at around 2.1～2.2eV (visible with naked eye). The films containing Ge and Si clusters showed luminescence peaks at around 1.6～1.8eV. Strong luminescence was not observed for the samples containing well grown microcrystals a few nanometers in diameter.     

Ge弥散莫来石复合材料的制备及其光致发光性能

以硝酸铝、正硅酸乙酯(TEOS)和3-三氯锗丙酸为原料, 通过溶胶-凝胶法合成了Al12Si3.75Ge0.25O26莫来石固溶体粉体, 并利用热重-差热分析(TG-DSC)、X射线衍射(XRD)、红外光谱(FT-IR)等技术对陶瓷粉体的形成过程进行了表征. 对其进行还原处理并对产物的光致发光性能进行了研究, 观察到发光峰位于565、613、682、731和777 nm的室温光致发光现象. 比较不同还原温度下制备的样品, 结果发现500 益还原样品的发光强度最强. 通过晶格常数计算并结合XPS研究表明, 在500 ℃还原时已有Ge4+从基体中被还原为Ge0粒子. 拉曼光谱显示, 500 益还原样品中, Ge0主要是以平均粒径约为1.95 nm的团簇形式存在.     

高色纯度高热稳定性红色荧光粉Sr3La2Ge3O12:Sm^3+的合成及其性能

通过高温固相法合成了一系列Sr3La2-xGe3O12:xSm^3+(0≤x≤0.04)红色荧光粉,并对样品的形貌、元素组成、晶体结构、发光性能及热稳定性进行了探究。结果表明:样品Sr3La2Ge3O12:xSm^3+为较宽尺寸分布的颗粒,且结构中仅含有Sr、La、Ge、O、Sm等元素。样品Sr3La1.97Ge3O12:0.03Sm^3+的Rietveld结构精修图与实测XRD图完全吻合,具有六方晶系结构。漫反射测试结果显示基质Sr3La2Ge3O12的带宽为5.54 eV,属于宽带隙材料。在404 nm激发下,样品Sr3La2-xGe3O12:xSm^3+(0≤x≤0.04)的最大发射峰位于601nm处,属于Sm^3+的6H5/2→4L13/2能级跃迁。此外,样品Sr3La1.97Ge3O12:0.03Sm^3+的发光性能最佳,其CIE色坐标为(0.5321,0.4601),色纯度高达94.2%,在298-473 K范围内具有较好的热稳定性,测试温度达到423 K时发射强度仍为室温时的81.6%。     

Strong near-infrared luminescence in BaSnO3

Powdered samples of the perovskite BaSnO(3) exhibit strong near-infrared (NIR) luminescence at room temperature, following band-gap excitation at 380 nm (3.26 eV). The emission spectrum is characterized by a broad band centered at 905 nm (1.4 eV), tailing on the high-energy side to approximately 760 nm. The Stokes shift is 1.9 eV, and measured lifetimes in the range 7-18 ms depend on preparative conditions. These extraordinary long values indicate that the luminescence involves a defect state(s). At low temperatures, both a sharp peak and a broad band appear in the visible portion of the luminescence spectrum at approximately 595 nm. Upon cooling, the intensity of the NIR emission decreases, while the integrated intensities of the visible emission features increase to approximately 40% of the NIR intensity at 77 K. Room-temperature photoluminescence (PL) is observed across the Ba(1-x)Sr(x)SnO(3) series. As the strontium content increases, the excitation maximum and band gap shift further into the UV, while the intensity of the NIR emission peak decreases and shifts further into the infrared. This combination leads to an unexpectedly large increase in the Stokes shift. The unusual NIR PL in BaSnO(3) may originate from recombination of a photogenerated valence-band hole and an occupied donor level, probably associated with a Sn(2+) ion situated roughly 1.4 eV above the valence-band edge.     

Mesoporous compound semiconductors from the reaction of metal ions with deltahedral [Ge9]4- clusters

We report the surfactant-directed assembly of mesoporous metal/germanium-based semiconducting materials from coupling of anionic (Ge 9) (4-) clusters with various linking metal ions. The resulting materials feature a metal/Ge 9 framework perforated by regular arrays of mesoporous channels. The permanent mesoporosity of the materials NU-MGe-2 (M = Sb, In, Sn, Pb, Cd), determined by N 2 physisorption measurements, corresponds to high internal BET surface areas from 127 to 277 m (2)/g and total pore volumes from 0.15 to 0.26 cm (3)/g. The mesoporous structures exhibit energy gaps in the range of 1.48-1.70 eV as well as strong photoluminescence at room temperature with emission energies varying from 740 to 845 nm. The emission depends on pore wall thickness and framework composition. The photoemission intensity in the mesoporous intermetallic germanium-based frameworks can be selectively suppressed by adsorbing electron-acceptor species such as tetracyanoethylene molecules but remains unchanged when exposed to electron-donor species such as tetrathiafulvalene molecules.     

Synthesis and Characterization of CdS Nanoparticles via Cyclic Microwave from Cadmium Oxalate

The present study reports synthesis and characterization of CdS nanoparticles prepared by cyclic microwave route with the use of [Cd(C₂O₄)·3H₂O] powder as a precursor. The products, with an average size ~15 nm, were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray microanalysis, thermogravimetric analysis, transmission electron microscopy and Fourier transform infrared spectroscopy. Optical property of obtained product was investigated by photoluminescence spectroscopy. The prepared nanostructures displayed a very strong luminescence at 528 nm (2.34 eV) at room temperature.     

Ce,Pr掺杂的YAG微晶玻璃的制备及光谱性能

以Y2O3-Al2O3-SiO2-Li2O-K2O-Na2O玻璃作为Ce,Pr掺杂基质玻璃,制备出白光LED用Ce:YAG和Ce,Pr:YAG微晶玻璃.使用X射线衍射仪、场发射扫描电子显微镜、荧光光度计对微晶玻璃的晶相、微观形貌、光谱性能及荧光寿命进行了研究.结果表明:掺杂铈或铈镨共掺杂的基质玻璃在1400℃热处理得到...     

溴氧化镧的缺陷发光

用高温固相法合成了具有缺陷发光的溴氧化镧基质。对样品进行了X-射线衍射、荧光光谱和热释光谱的测试。荧光光谱分析得出在1000℃合成溴氧化镧基质在350nm到500nm存在两个宽带发射,通过与LaOF、LaOCl的荧光光谱和热释光谱对比,得出溴氧化镧基质的发光归结于溴的缺陷,通过计算发现两种不同类型的缺陷能级分别为0.74eV,0.70eV。     

A simple solution route to single-crystalline Sb2O3 nanowires with rectangular cross sections

We report a simple solution route to large-scale synthesis of uniform, single-crystalline, and well-faceted orthorhombic antimony trioxide (Sb(2)O(3)) nanowires with rectangular cross sections by direct air oxidation of bulk metal antimony (Sb) in a mixed solution made of ethylenediamine (EDA) and deionized water (DIW). The as-synthesized products were analyzed by range of methods, such as XRD, SEM, EDX, TEM, SAED, HRTEM, FTIR, Raman, UV-vis absorption, and photoluminescence (PL) spectra. The as-synthesized Sb(2)O(3) nanowires with rectangular cross sections are usually hundreds of micrometers in length, typically 80-100 nm in width, and 60-80 nm in thickness. The novel room temperature photoluminescence properties of Sb(2)O(3) nanowires with rectangular cross sections displayed a significant UV luminescence with a strong emission band at 374 nm, which was reported for the first time, indicating the as-synthesized products with an optical band gap E(g) = 3.3 eV. It is expected that as-synthesized Sb(2)O(3) nanowires would be a new member of functional materials and used in the manufacture of advanced nanodevices.