纳米复合Sb_2O_3/TiO_2的光催化性能研究

采用溶胶-凝胶法制备复合纳米 Sb2O3/TiO2。 Sb2O3掺入浓度越大,催化剂中锐钛矿相含量越高,晶粒直径与颗粒直径越小,比表面积越大。在 380～ 460nm范围内, Sb2O3/TiO2的反射率则减弱,表明光吸收增强。 XPS分析表明：掺入 2％ Sb2O3,出现新的 Ti2p3/2峰,对应于 Ti3＋,占 9.13％;锑以 Sb3＋、 Sb5＋两种形式存在, Sb5＋占 84.42％、 Sb3＋占 17.58％。以亚甲基蓝溶液光催化降解为模型反应,掺入 2％、 5％ Sb2O3,亚甲基蓝溶液的光催化脱色降解一级动力学常数与总有机炭（ TOC）去除率增大。发射光谱证明： Sb2O3的最佳比例为 2％,当其比例大于 2％时,其电子空穴对的复合率升高,光催化活性下降。     

固固相反应合成牛磺酸水杨醛钾与锑、铋的配合物

合成了牛磺酸水杨醛钾,并采用室温固固相反应法合成了牛磺酸水杨醛钾与三氯化锑和三氯化铋的配合物,其组成为:K2MC18H20O8N2S2 (M = Sb, Bi)。两种配合物的晶体结构均属于单斜晶系,锑配合物的晶胞参数为:a = 1.2869 nm, b = 1.7636 nm, c = 1.9917 nm, β= 93.79埃活榕浜衔锏木О问篴 = 1.4770 nm, b = 2.0334 nm, c = 2.0149 nm, β= 94.05。红外光谱表明N、Cl原子参与了配位,中心离子的配位数为5。     

Shrinking nanowires by kinetically controlled electrooxidation

Nanowires composed of antimony, gold, and bismuth telluride (Bi2Te3) were reduced in diameter by electrooxidation in aqueous solutions. When electrooxidation was carried out using low current densities (Jox < 150 microA cm(-2)), the mean wire diameter decreased in direct proportion to the oxidation time, as expected for a kinetically controlled process. Under these conditions, the diameter uniformity of nanowires remained constant as wires were shrunk from initial diameters of more than 120 nm to less than 40 nm, for Sb and Bi2Te3, and less than 60 nm for Au. Oxidized nanowires remained continuous for more than 100 microm. Electrooxidation at higher current densities rapidly introduced breaks into these nanowires. Electrochemical wire growth and shrinking by electrooxidation were integrated into a single electrochemical experiment that allowed the final mean diameter of nanowires to be specified with a precision of 5-10 nm.     

Luminescence Property and Synthesis of Sulfur-doped ZnO Nanowires by Electrochemical Deposition

"Sulfur-doped zinc oxide (ZnO) nanowires were successfully synthesized by an electric field-assisted electrochemical deposition in porous anodized aluminum oxide template at room temperature. The structure, morphology, chemical composition and photoluminescence properties of the as-synthesized ZnO:S nanostructures were investigated. X-ray diffraction and the selected area electron diffraction results reveal that the as-ynthesized products are single phase with hexagonal wurtzite structure with a highly preferential orientation in the (101) direction. Transmission electron microscopy observations indicate that the nanowires are niform with an average diameter of 70 nm and length up to several tens of micrometers. X-ray photoelectron pectroscopy further reveals the presence of S in the ZnO nanowires. Room-temperature photoluminescences observed in the sulfur-doped ZnO nanowires which exhibits strong near-band-edge ultraviolet peaks at 378 and 392 nm and weak green emissions at 533 and 507 nm. A blue emission at 456 nm and violet emissions at around 406, 420, and 434 nm were also observed in the PL spectrum for the as-synthesized ZnO:S nanowires. The PL spectrum shows that S-doping had an obvious effect on the luminescence property of typical ZnO nanowires."     

Synthesis, characterization, and photoluminescence property of LaCO3OH microspheres

Novel LaCO3OH microspheres with the hexagonal phase were synthesized by a hydrothermal method using La(NO3)(3).6H2O and urea CO(NH2)2 as the starting materials. Various experimental parameters were examined, such as the reaction temperature, the reaction time, and the molar ratios of the starting reagents. The as-synthesized products were characterized by powder X-ray diffraction, transmission electron microscopy, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and photoluminescence (PL). The PL result showed one broad emission band centered at 438 nm (lambdaex=365 nm) of the pure LaCO3OH microspheres. In addition, a possible formation mechanism of LaCO3OH microspheres and the PL property of pure LaCO3OH microspheres were discussed.     

Single-crystalline vanadium dioxide nanowires with rectangular cross sections

We report the synthesis of single-crystalline VO2 nanowires with rectangular cross sections using a vapor transport method. These nanowires have typical diameters of 60 (+/-30) nm and lengths up to >10 mum. Electron microscopy and diffraction measurements show that the VO2 nanowires are single crystalline and exhibit a monoclinic structure. Moreover, they preferentially grow along the [100] direction and are bounded by the (01) and (011) facets. These VO2 nanowires should provide promising materials for fundamental investigations of nanoscale metal-insulator transitions.     

Sn1-xSbxO2固溶体电极的形成能与电子结构

为研究Sb掺杂对Ti/SnO2电极稳定性与导电性的影响, 采用基于密度泛函理论的平面波赝势方法对金红石型SnO2及不同比例Sb掺杂SnO2体系进行了第一性原理计算, 用广义梯度近似方法优化了Sn1-xSbxO2固溶体电极的晶体结构, 计算了掺杂前后体系的电子结构以及不同掺杂比例时的形成能. 结果表明: Sb替代Sn后, 晶格常数与晶胞体积均增加, 但掺杂形成能随掺杂量变化不大, 在掺杂量为0.083时掺杂形成能达到最低值5.08 eV,稳定性最好. 掺杂Sb后, 在费米能级至最低导带处存在Sb 5s电子态分布, 产生施主能级; 同时Sb掺杂后, 在导带底形成的可填充电子数也从未掺杂的4增加到了掺杂后的19, 导电性明显增强, 且在掺杂量为0.063时导电性最强. 本文的计算结果为钛基Sn1-xSbxO2氧化物电极的开发与应用提供了理论依据.     

ZnO-聚苯胺同轴纳米线及其列阵的制备和表征

以阳极氧化铝膜 (AAO)作模板 ,制备聚苯胺 (PANI)纳米管和PANI纳米管列阵 ;同时利用溶胶_凝胶法制备ZnO_PANI同轴纳米线和同轴纳米线列阵 .PANI纳米管和ZnO_PANI同轴纳米线的形貌通过透射电子显微镜表征 .PANI纳米管的外径约 3 0nm ,内径约 1 0nm ;ZnO_PANI同轴纳米线直径约 60nm .实验发现 ,较之ZnO纳米线 ,同轴AAO模板中纳米线列阵的可见光发射谱带兰移 ,强度显著增强 ,这可能和PANI链上的NH基团与表面Zn2 +离子之间的相互作用有关 ,以及由于ZnO纳米微粒在PANI上富集、PANI的光生载流子部分转移给ZnO微粒所致 .实验还发现分散在NaOH溶液中的同轴纳米线 ,其可见光发射谱带比AAO模板中同轴纳米线的谱带兰移更甚     

In2O3八面体的碳还原法制备及其发光性能研究

In₂O₃ octahedrons were synthesized by carbothermal reduction using In₂O₃ nanoparticles as the source material. The as-synthesized products were characterized by X-ray powder diffraction (XRD), energy dispersive X-ray(EDX), scanning electron microscopy(SEM), transmission electron microscopy(TEM), high-resolution transmission electron microscopy (HRTEM), selected-area electron diffraction analysis(SAED) and Room-temperature photoluminescence(PL) spectroscopy. The results show that the products are single-crystalline In₂O₃ octahedrons, the length of the octahedrons is in the range of 400～3 000 nm; the PL patterns display two peaks located at 447nm and 555 nm upon excitation at 380 nm, and the other two peaks located at 444 nm and 550 nm upon excitation at 325 nm; the excitation pattern shows two peaks located at 274 nm and 371 nm, respectively. The growth mechanism of the In₂O₃ octahedrons is discussed, and the high supersaturation ratio is considered as the key factor.     

Thermal and photoluminescence properties of hydrated YPO4:Eu nanowires

In this work, we used the solution precipitation route to synthesize Eu³⁺-doped YPO₄·nH₂O nanowires. The structure, morphology, composition, thermal behavior, and photoluminescence of as-synthesized product were characterized by X-ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG/DTA), energy-dispersive X-ray spectroscopy (EDS), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopic (FE-SEM) and photoluminescence (PL) spectra. The dependence of the structure, morphology, composition and luminescent properties on the thermal treatment was investigated. The results indicate that the aqueous synthesis has a better control on the structure, morphology, composition of the products, and that the heat treatment induces the transitions of the structure, composition, and luminescent properties.     

Preparation of single-crystalline NdVO4 nanorods, and their emissions in the ultraviolet and blue under ultraviolet excitation

This paper describes a facile sacrifical (NH4)0.5V2O5 nanowires approach to single-crystalline NdVO4 nanorods. The nanorods have a rectangular cross section of about 30 x 30 nm2 to 100 x 200 nm2, and length ranging from 400 to 700 nm. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) show that the nanorods grew respectively along the [312] and [101] direction on the (NH4)0.5V2O5 nanowires. Ultraviolet (362 nm) and blue (467 nm) emissions can be observed under excitation of 310 nm at room temperature, suggesting that the nanorods should be good candidates for fabricating UV and blue nanodevices.     

Bi3.25La0.75Ti3O12纳米线的可见光催化性能

研究了用一步水热法制备的掺镧钛酸铋(Bi_3.25La_0.75Ti₃O₁₂, BLT)纳米线的光学和可见光催化性能, 并对其晶体结构和微观结构用X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等手段进行了表征. 结果表明, 制备的纳米线为纯相的Bi_3.25La_0.75Ti₃O₁₂, 平均直径约为25 nm. 室温光致发光谱(PL)显示BLT纳米线在433和565 nm附近有较强的发射峰, 分别对应激子发射和表面缺陷发光. 紫外-可见漫反射光谱(UV-Vis DRS)表明BLT样品的带隙能约为2.07 eV. 利用可见光(λ>420 nm)照射下的甲基橙降解实验评价了BLT样品的光催化性能. 结果表明, BLT的光催化活性比商用TiO₂催化剂P25、掺氮TiO₂和纯相钛酸铋(Bi₄Ti₃O₁₂, BIT)高得多. BLT光催化剂具有更高催化活性的原因是La³⁺离子掺杂拓展了BIT对可见光的吸收范围, 同时抑制了BIT的光生电子-空穴的复合.     

Preparation and properties of ternary ZnMgO nanowires

Zn0.84Mg0.16O and Zn0.12Mg0.88O nanowires with different morphology have been synthesized by a catalyst-free thermal evaporation method using Zn and Mg metals as the raw materials. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), and room-temperature photoluminescence (PL) measurements were used to determine the structure and optical properties of the obtained products. The obtained nanowires have diameters in a range of 30 nm-80 nm, crystallized well as hexagonal and cubic phase, with preferred orientation along the c-axis and a-axis for the two samples of Zn0.84Mg0.16O and Zn0.12Mg0.88O, respectively. Room-temperature PL at wavelengths of 384.4 and 495.8 nm has been observed for the sample of Zn0.84Mg0.16O. Upon annealing in Ar ambient, the emission peaks in PL spectra show a clearly blue shift.     

Cu(2)O nanowires in an alumina template: electrochemical conditions for the synthesis and photoluminescence characteristics.

Cu2O nanowires, mainly consisting of (100) and (200) polycrystalline structures with a length of 4 mum are prepared by electrochemical deposition using a porous alumina template. It is found that the optimized electrochemical conditions to prepare Cu2O nanowires are different from those for the formation of a bulk thin Cu2O layer since different pH values are found between the tip of the pores and the bulk, due to diffusion limits in porous alumina with an extremely high aspect ratio of 300. We point out that Cu2O (200), Cu2O (111), Cu, and co-deposited alloys can be obtained under specific electrochemical conditions. In addition, the optical band gap of the prepared Cu2O nanowires with a length of 4 microm and a diameter of 200 nm is estimated to be 2.17 eV from photoluminescence measurements.     

Vapor-liquid-solid and vapor-solid growth of phase-change Sb2Te3 nanowires and Sb2Te3/GeTe nanowire heterostructures

We report the synthesis and characterization of radial heterostructures composed of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved synthesis of Sb2Te3 nanowires. The synthesis of the heterostructures employs Au-catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms. Energy-dispersive X-ray spectrometry indicates that Sb and Ge are localized in the Sb2Te3 and GeTe portions, respectively, confirming the alloy-free composition in the core/shell heterostructures. Transmission electron microscopy and diffraction studies show that Sb2Te3 and GeTe regions exhibit rhombohedral crystal structure. Both Sb2Te3 and GeTe grow along the [110] direction with an epitaxial interface between them. Electrical characterization of individual nanowires and nanowire heterostructures demonstrates that these nanostructures exhibit memory-switching behavior.     

Synthesis, characterization, and optical properties of In2O3 semiconductor nanowires

In2O3 semiconductor nanowires were synthesized by the chemical vapor deposition method through carbon thermal reduction at 900 degrees C with 95% Ar and 5% O2 gas flow. The In2O3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence spectroscopy (PL). For the first time, we observed the formation of corundum-type h-In2O3 nanowires and branched In2O3 nanowires. The PL spectra of In2O3 nanowires show strong visible red emission at 1.85 eV (670 nm) at low temperature, possibly caused by a small amount of oxygen vacancies in the nanowire crystal structure.     

Room-temperature synthesis of self-assembled Sb2S3 films and nanorings via a two-phase approach

The freestanding Sb(2)S(3) films were easily synthesized at the interface of water and toluene at room temperature, where Na(2)S and (C(2)H(5)OCS(2))(3)Sb (xanthate, O-ethyldithiocarbonate) acted as sulfur and antimony source, respectively. After 3 h of aging, the Sb(2)S(3) films with a flat surface toward organic side and rough surface toward aqueous side were assembled by sheaflike Sb(2)S(3) nanowires. The Sb(2)S(3) nanorings formed by end-to-end connection of the bundled nanowires appeared in the water layer when the reaction time reached 24 h. The Sb(2)S(3) nanorings showed higher photocatalytic activity for methyl orange degradation under visible light than the Sb(2)S(3) films owing to broader spectrum response and better aqueous dispersion.     

Photoluminescence resulting from semiconductor-metal solid solution observed in one-dimensional semiconductor nanostructures

A narrow band photoluminescence (PL) emission peak resulting from CdS-Au solid solution was observed when growing one-dimensional nanostructures of CdS via the vapor-liquid-solid mechanism by using Au as the catalyst. This emission peak was located at 680 nm, a wavelength longer than the near band edge emission of CdS at 520 nm, and was shown not to be caused by the usual trap states of CdS which lead to a broad band emission. Here, the one-dimensional nanostructures of CdS were grown in a simple, low-temperature (360 degrees C) metal-organic chemical vapor deposition process with a single source precursor of CdS. Straight nanowires of diameter 50-70 nm and wormlike nanorods of diameter 100-200 nm were obtained. Both the upper and lower portions of the nanorods/nanowires possessed single crystallinity as judged from the corresponding high-resolution transmission electron microscopy images and selected area electron diffraction data. This work demonstrates the feasibility of adjusting PL emission peaks of optoelectronic semiconductors through alloying with metals.     

Antimony(III) Oxide Film on a Cellulose Fiber Surface: Preparation and Characterization of the Composite

Cellulose/antimony(III) oxide composites, Cel/Sb(2)O(3), with oxide loadings of 1.7, 5.4, and 9.2 wt% were prepared by reacting the precursor SbCl(3) reagent with cellulose in dry ethanol solution. The reaction of the Lewis acid and the cellulose fibers occurred at the~amorphous domains of the biopolymer, increasing the crystallinity degree of the composite compared with that of the untreated cellulose. The scanning electron microscopy images and metal mapping for all samples showed that the oxide film layer uniformly covered the fiber surfaces with no detectable agglomerates of the oxide particles. The synchrotron X-ray diffraction patterns indicated that the antimony oxide film was obtained as a crystalline phase with orthorombic structure. The atomic ratios of O/Sb, determined by X-ray photoelectron spectroscopy, indicated that, for Cel/Sb(2)O(3) samples with 9.3 wt% loading, the fiber surface is nearly saturated by the oxide layer. The thermal stability of Cel/Sb(2)O(3) compared to that of untreated cellulose is practically unaffected. Copyright 2000 Academic Press.     

自掺杂型锑氧化物材料的制备、表征及其对Sr(Ⅱ)的吸附性能

⁹⁰Sr 是核电站放射性废液中需要重点去除的核素之一,水合锑氧化物Sb₂O₅·mH₂O可以在酸性条件下选择性吸附脱除⁹⁰Sr. 本文在以醇为溶剂的无水体系中,以化学性能较稳定且毒性低的SbCl₃为原料,以紫外线照射辅助双氧水氧化及控制水解两步法制备出自掺杂型锑氧化物Sb（Ⅲ）/Sb₂O₅. 文中采用X射线光电子能谱（XPS）、X射线衍射（XRD）和傅里叶变换红外（FTIR）光谱对材料结构进行结构表征,并采用批量实验方法研究不同Sb（Ⅲ）/Sb（total）比例与Sr（Ⅱ）吸附性能的相关性,以及溶液pH 值对Sr（Ⅱ）吸附性能的影响. 实验结果表明：Sb（Ⅲ）可在较大的比例范围内共存于立方烧绿石型Sb₂O₅晶格内,形成良好的固溶体Sb（Ⅲ）/Sb₂O₅;制备过程中通过控制醇溶剂的类型、氧化剂的添加方式以及两步反应温度,可以获得具有不同氧化率,即不同Sb（Ⅲ）/Sb（total）比例的Sb（Ⅲ）/Sb₂O₅材料;其中Sb（Ⅲ）/Sb（total）比例为49.8%的锑氧化物材料吸附性能最好,在纯水体系下对Sr（Ⅱ）的分配系数为6.6×107 mL·g^-1,在pH=3-13 范围内对Sr（Ⅱ）具有良好的吸附性能,并且在本文实验条件下,Sr（Ⅱ）在锑氧化物材料上的吸附更好地符合Langmuir吸附模型.