双硫腙后处理诱导的钙钛矿膜二次结晶和钝化

有机-无机杂化钙钛矿较低的缺陷形成能和表面的悬挂键会导致其薄膜中产生铅缺陷。这些深能级缺陷会直接引起载流子的非辐射复合,导致有机-无机杂化钙钛矿光伏器件的界面接触和载流子传输效率变差,最终降低了器件的综合性能。采用双硫腙作为钙钛矿薄膜表面的二次结晶诱导剂和铅缺陷钝化剂,通过对钙钛矿膜进行后处理的方法实现对钙钛矿薄膜的形貌调控和缺陷钝化。进一步的研究结果表明,双硫腙通过与铅离子配位的方式有效地钝化了铅缺陷,并诱导了表面钙钛矿晶体的二次结晶,改善了薄膜质量,进而提高了器件的综合性能。     

卟啉/酞菁配合物修饰钙钛矿太阳能电池研究

为解决资源短缺和环境污染问题,太阳能电池应用研究引起了广泛的科学关注。在过去的十年间,钙钛矿太阳能电池作为一种新型的电池技术得到了快速发展,逐渐成为目前商业化硅基太阳能电池最有力的竞争对手之一。然而,钙钛矿薄膜在低温溶液制备过程中不可避免地形成缺陷,这些缺陷是严重制约钙钛矿太阳能电池光电转化效率与长期运行稳定性得到进一步提高的主要因素。利用功能化有机分子钝化钙钛矿薄膜表面及晶界处缺陷是提升电池性能及稳定性的有效手段。卟啉/酞菁金属配合物具有良好的稳定性和优异的光电特性,利用卟啉/酞菁金属配合物修饰钙钛矿薄膜是提高钙钛矿太阳能电池性能和稳定性的有效方法之一。本文综述了卟啉/酞菁金属配合物界面调控实现高效稳定钙钛矿太阳能电池组装的研究进展,并对其存在的问题及今后可能的发展方向进行了总结与展望。     

SnO2表面卤化提高钙钛矿太阳能电池光伏性能

钙钛矿太阳能电池(PSCs)成为近几年来迅速发展的新型太阳能电池,其中将SnO₂纳米粒子层用作电子传输层(ETL)的钙钛矿太阳能电池器件得到了广泛的关注。SnO₂有着更低的制备温度,使其具备应用于柔性器件的潜力,但与钙钛矿层能级不匹配等问题限制着其发展。而在界面处加入钝化层,尤其是表面卤化的方法或可解决这一问题。本文综合研究了SnO₂表面卤化对钙钛矿太阳能电池光伏性能的影响,选用四丁基氯化铵(TBAC)、四丁基溴化铵(TBAB)和四丁基碘化铵(TBAI)三种钝化材料对SnO₂表面进行钝化处理,并对钝化材料溶液进行了浓度梯度研究。通过材料形貌、结构和光学性能表征以及电池器件性能测试分析等方法,证明了SnO₂表面卤化可提高钙钛矿层的质量和PSCs光伏性能,并从器件内部电荷传输动力学等角度解释了器件性能改善的原因。为进一步说明其性能改善的机理,采用基于密度泛函理论(DFT)的第一性原理计算方法对材料表面性质进行了深入研究,从能量、结构、电荷密度、态密度、功函数等角度解释了表面卤化提高SnO₂/钙钛矿界面处电子传输特性的原因。实验和理论计算均表明TBAC对于SnO₂具有较好的钝化效果,并随着溶液浓度的提升钝化作用越明显。SnO₂表面卤化作用的深入研究不仅对提高电池器件性能具有实际意义,还能够帮助理解太阳能电池界面现象,为界面改性提供新的研究思路。     

界面钝化策略:提高钙钛矿太阳能电池的稳定性

近年来,新兴起的有机无机杂化钙钛矿太阳能电池突飞猛进,在短短十年里其光电转化效率从3.8%迅速发展到目前25.2%的认证效率,被视为最具有应用潜力的新型高效率太阳能电池之一。虽然钙钛矿太阳能电池具有很高的光电转换效率已与多晶硅薄膜电池相媲美,但是电池的长期稳定性仍是阻碍其商业化的一大挑战。钙钛矿表面和晶界存在大量的缺陷,界面钝化来提高钙钛矿太阳能电池的稳定性是非常重要且有效的策略。二维钙钛矿材料是有机胺层与无机层交替的层状钙钛矿,具有体积较大的有机铵阳离子,与传统的三维钙钛矿材料相比对于环境的稳定性较好,并且结构灵活可调,在三维钙钛矿表面修饰二维钙钛矿层钝化缺陷,在提高钙钛矿太阳能电池效率的同时又保证了稳定性,另外,合适的钝化剂分子也能够非常有效地钝化缺陷。本文总结了钙钛矿太阳能电池的不稳定因素,归纳了钙钛矿太阳能电池界面钝化方面的研究进展,指出了二维钙钛矿材料发展的巨大潜力以及寻找合适钝化剂分子的原则,期望能够为获得高性能的钙钛矿太阳能电池进而实现商业化提供有益的指导。     

卤化钙钛矿太阳能电池的缺陷容忍及缺陷钝化研究进展

缺陷在钙钛矿太阳能电池的快速发展中起着至关重要的作用。缺陷容忍性,即金属卤化钙钛矿的主导缺陷是浅能级缺陷,它们不会成为强非辐射复合中心,这被认为是金属卤化钙钛矿的独特特性,是其具有高光电转换效率的主要原因。然而,要进一步提高金属卤化钙钛矿的光电转换效率,就需要消除一些可作为非辐射复合中心并严重影响器件性能的少量深能级缺陷,包括点缺陷、晶界、表面和界面等。本文综述了缺陷容忍的研究进展,包括软声子模式和极化子效应。此外,还总结了缺陷钝化的策略,包括通过阳离子或阴离子来钝化离子键,以及通过路易斯酸或路易斯碱来钝化配位键等。     

钛掺杂钙钛矿制备高效率钙钛矿太阳能电池

采用钛离子掺杂钙钛矿薄膜的方法修饰钙钛矿晶界缺陷。研究表明钛离子富集在晶界处,有效地钝化了晶界缺陷,同时有助于连续、平整、高质量薄膜的形成。经过钛离子掺杂后的钙钛矿太阳能电池电流(JSC)达到22.3 mA·cm~(-2),开路电压(VOC)达1.1 V,填充因子(FF)高达72.4%,光电转换效率(PCE)优化至17.4%,远高于未掺杂钙钛矿太阳能电池。     

卤化钙钛矿太阳能电池的缺陷容忍及缺陷钝化研究进展（英文）

缺陷在钙钛矿太阳能电池的快速发展中起着至关重要的作用。缺陷容忍性,即金属卤化钙钛矿的主导缺陷是浅能级缺陷,它们不会成为强非辐射复合中心,这被认为是金属卤化钙钛矿的独特特性,是其具有高光电转换效率的主要原因。然而,要进一步提高金属卤化钙钛矿的光电转换效率,就需要消除一些可作为非辐射复合中心并严重影响器件性能的少量深能级缺陷,包括点缺陷、晶界、表面和界面等。本文综述了缺陷容忍的研究进展,包括软声子模式和极化子效应。此外,还总结了缺陷钝化的策略,包括通过阳离子或阴离子来钝化离子键,以及通过路易斯酸或路易斯碱来钝化配位键等。     

溶剂工程调控钙钛矿薄膜中PbI2和PbI2(DMSO)的形成(英文)

钙钛矿太阳能电池以其高效、低成本的特点备受关注。到目前为止,钙钛矿太阳能电池的最高光电转换效率已经超过25%,显示出良好的应用前景。钙钛矿薄膜的结晶性能是决定器件性能的关键,因此,调控钙钛矿薄膜的生长过程至关重要。本工作中,我们发现通过简单调节前驱体溶剂,即调节二甲基亚砜：1,4-丁内酯:N,N-二甲基甲酰胺(DMSO:GBL:DMF)的三种混合溶剂的比例,可实现钙钛矿薄膜中PbI₂和PbI₂(DMSO)含量的调节,从而调节电池的器件性能。此外,本工作系统研究了PbI₂和PbI₂(DMSO)的含量对器件性能的影响。结果表明,PbI₂(DMSO)的形成会导致300–425nm波长范围内电池的外量子效率(EQE)降低,从而导致器件性能下降。相反,通过在前驱体溶液中添加额外的碘化亚甲基铵(MAI),可以抑制PbI₂和PbI₂(DMSO)的形成。     

溶剂工程调控钙钛矿薄膜中PbI2和PbI2(DMSO)的形成

钙钛矿太阳能电池以其高效、低成本的特点备受关注。到目前为止,钙钛矿太阳能电池的最高光电转换效率已经超过25%,显示出良好的应用前景。钙钛矿薄膜的结晶性能是决定器件性能的关键,因此,调控钙钛矿薄膜的生长过程至关重要。本工作中,我们发现通过简单调节前驱体溶剂,即调节二甲基亚砜：1, 4-丁内酯: N, N-二甲基甲酰胺(DMSO : GBL : DMF)的三种混合溶剂的比例,可实现钙钛矿薄膜中PbI₂和PbI₂(DMSO)含量的调节,从而调节电池的器件性能。此外,本工作系统研究了PbI₂和PbI₂(DMSO)的含量对器件性能的影响。结果表明,PbI₂(DMSO)的形成会导致300–425 nm波长范围内电池的外量子效率(EQE)降低,从而导致器件性能下降。相反,通过在前驱体溶液中添加额外的碘化亚甲基铵(MAI),可以抑制PbI₂和PbI₂(DMSO)的形成。     

电泳法制备的致密氧化锡薄膜及其在高稳定性钙钛矿太阳能电池中的应用

在平面型钙钛矿太阳能电池中常采用SnO₂作为电子传输层材料,相应的SnO₂薄膜常采用溶液旋涂法制备。但是由于前驱液中的纳米颗粒可能会发生部分团聚、基底和溶液难以完全避免灰尘等杂质颗粒混入,且最佳的SnO₂电子传输层的厚度通常仅有约20 nm,所以这种方法制备的电子传输层难以保证严格致密和无纳米针孔。在本工作中,我们报道了一种电泳沉积制备致密SnO₂薄膜的方法,并用其有效地提高了钙钛矿太阳能电池的光电转换效率和工况稳定性。通过电泳法,表面带负电荷的SnO₂纳米颗粒在电场的作用下沉积到氧化铟锡(ITO)阳极表面,这种方法得到的薄膜比旋涂法制备的更为致密。将其应用于n-i-p结构的钙钛矿太阳能电池中,能够使得暗电流降低并抑制载流子的非辐射复合,从而提高电池的短路电流和开路电压,进而实现更高的光电转换效率(从18.17%提高到19.52%),且能消除迟滞效应。更重要的是,长期工况稳定性测试表明基于电泳-旋涂法制备的器件在1个太阳的光照下、最大功率点处连续工作960 h后,仍然能够保持71%的初始效率;然而基于旋涂法制备的器件在工作100 h后即降低到初始效率的70%。本工作提供了一种全新的SnO₂电子传输层的制备方法,显著地提高了器件性能和工况稳定性,后续有望应用于制备大面积器件和电池模组。     

Lead‐Free Silver‐Bismuth Halide Double Perovskite Nanocrystals

Lead‐free perovskite nanocrystals (NCs) were obtained mainly by substituting a Pb²⁺ cation with a divalent cation or substituting three Pb²⁺ cations with two trivalent cations. The substitution of two Pb²⁺ cations with one monovalent Ag⁺ and one trivalent Bi³⁺ cations was used to synthesize Cs₂AgBiX₆ (X=Cl, Br, I) double perovskite NCs. Using femtosecond transient absorption spectroscopy, the charge carrier relaxation mechanism was elucidated in the double perovskite NCs. The Cs₂AgBiBr₆ NCs exhibit ultrafast hot‐carrier cooling (<1 ps), which competes with the carrier trapping processes (mainly originate from the surface defects). Notably, the photoluminescence can be increased by 100 times with surfactant (oleic acid) added to passivate the defects in Cs₂AgBiCl₆ NCs. These results suggest that the double perovskite NCs could be potential materials for optoelectronic applications by better controlling the surface defects.     

The Influence of Oxygen Plasma on Methylammonium Lead Iodide (MAPbI3) Film Doped with Lead Cesium Triiodide (CsPbI3)

In recent years, the study of organic–inorganic halide perovskite as an optoelectronics material has been a significant line of research, and the power conversion efficiency of solar cells based on these materials has reached 25.5%. However, defects on the surface of the film are still a problem to be solved, and oxygen plasma is one of the ways to passivate surface defects. In order to avoid destroying the methylammonium lead iodide (MAPbI₃), the influence of plasma powers on film was investigated and the cesium triiodide (CsPbI₃) quantum dots (QDs) were doped into the film. In addition, it was found that oxygen plasma can enhance the mobility and carrier concentration of the MAPbI₃ film.     

Managing Multiple Halide-Related Defects for Efficient and Stable Inorganic Perovskite Solar Cells

Halide-related surface defects on inorganic halide perovskite not only induce charge recombination but also severely limit the long-term stability of perovskite solar cells. Herein, adopting density functional theory calculation, we verify that iodine interstitials (I_i) has a low formation energy similar to that of the iodine vacancy (V_I) and is also readily formed on the surface of all-inorganic perovskite, and it is regarded to function as an electron trap. We screen a specific 2,6-diaminopyridine (2,6-DAPy) passivator, which, with the aid of the combined effects from halogen-N_pyridine and coordination bonds, not only successfully eliminates the I_i and dissociative I₂ but also passivates the abundant V_I. Furthermore, the two symmetric neighboring -NH₂ groups interact with adjacent halides of the octahedral cluster by forming hydrogen bonds, which further promotes the adsorption of 2,6-DAPy molecules onto the perovskite surface. Such synergetic effects can significantly passivate harmful iodine-related defects and undercoordinated Pb²⁺, prolong carrier lifetimes and facilitate the interfacial hole transfer. Consequently, these merits enhance the power-conversion efficiency (PCE) from 19.6 % to 21.8 %, the highest value for this type of solar cells, just as importantly, the 2,6-DAPy-treated CsPbI_3−xBr_x films show better environmental stability.     

Tungstate-mediated In-situ Passivation of Grain Boundary Grooves in Perovskite Solar Cells

Possessed with advantageous optoelectronic properties, perovskites have boosted the rapid development of solution-processed solar cells. The performance of perovskite solar cells (PSCs) is significantly weakened by the carrier loss at grain boundary grooves (GBGs); however, it receives limited attention and there lacks effective approach to solve this issue. Herein, for the first time, we constructed the tungstate/perovskite heterointerface via a “two step” in situ reaction approach that provides effective defect passivation and ensures efficient carrier dynamics at the GBGs. The exposed perovskite at grain boundaries is converted to wide-band-gap PbWO₄ via an in-situ reaction between Pb²⁺ and tungstate ions, which passivate defects due to the strong ionic bonding. Moreover, recombination loss is further suppressed via the heterointerface energetics modification based on an additional transformation from PbWO₄ to CaWO₄. PSCs based on this groove modification strategy showed good universality in both normal and inverted structure, with an improved efficiency of 23.25 % in the n-i-p device and 23.33 % in the p-i-n device. Stable power output of the modified device could maintain 91.7 % after around 1100 h, and the device efficiency could retain 92.5 % after aging in air for around 2110 h, and 93.1 % after aging at 85 °C in N₂ for 972 h.     

1D Choline-PbI3-Based Heterostructure Boosts Efficiency and Stability of CsPbI3 Perovskite Solar Cells

Defects in perovskite are key factors in limiting the photovoltaic performance and stability of perovskite solar cells (PSCs). Generally, choline halide (ChX) can effectively passivate defects by binding with charged point defects of perovskite. However, we verified that ChI can react with CsPbI₃ to form a novel crystal phase of one-dimensional (1D) ChPbI₃, which constructs 1D/3D heterostructure with 3D CsPbI₃, passivating the defects of CsPbI₃ more effectively and then resulting in significantly improved photoluminescence lifetime from 20.2 ns to 49.4 ns. Moreover, the outstanding chemical inertness of 1D ChPbI₃ and the repair of undesired δ-CsPbI₃ deficiency during its formation process can significantly enhance the stability of CsPbI₃ film. Benefiting from 1D/3D heterostructure, CsPbI₃ carbon-based PSCs (C-PSCs) delivered a champion efficiency of 18.05 % and a new certified record of 17.8 % in hole transport material (HTM)-free inorganic C-PSCs.     

Crystallinity Regulation and Defects Passivation for Efficient and Stable Perovskite Solar Cells Using Fully Conjugated Porous Aromatic Frameworks

Fully conjugated porous aromatic frameworks (PAFs) have been constructed through Gilch reaction. The obtained PAFs have rigid conjugated backbones, high specific surface area, and excellent stability. The prepared PAF-154 and PAF-155 have been successfully applied in the perovskite solar cells (PSCs) by doping into the perovskite layer. The champion PSC devices afford a power conversion efficiency of 22.8 % and 22.4 %. It is found that the PAFs can be used as an efficient nucleation template, thus regulating the perovskite crystallinity. Meanwhile, PAFs can also passivate defects and promote carriers transporting in the perovskite film. By the comparative study with their linear counterpart, we unravel that the efficacy of PAFs is highly related to their porous structure and rigid fully conjugated networks. The unencapsulated devices with PAFs doping exhibit outstanding long-term stability, retaining 80 % of their initial efficiencies after half-year storage in ambient conditions.     

Biopolymer passivation for high-performance perovskite solar cells by blade coating

Thin films of perovskite deposited from solution inevitably introduce large number of defects,which serve as recombination centers and are detrimental for solar cell performance.Although many small molecules and polymers have been delicately designed to migrate defects of perovskite films,exploiting credible passivation agents based on natural materials would offer an alternative approach.Here,an ecofriendly and cost-effective biomaterial,ploy-L-lysine(PLL),is identified to effectively passivate the defects of perovskite films prepared by blade-coating.It is found that incorporation of a small amount(2.5 mg mL^-1)of PLL significantly boosts the performance of printed devices,yielding a high efficiency of 19.45% with an increase in open-circuit voltage by up to 100 mV.Density functional theory calculations combined with X-ray photoelectron spectroscopy reveal that the functional groups(-NH2,-COOH)of PLL effectively migrate the Pb-I antisite defects via Pb-N coordination and suppress the formation of metallic Pb in the blade-coated perovskite film.This work suggests a viable avenue to exploit passivation agents from natural materials for preparation of high-quality perovskite layers for optoelectronic applications.     

Targeted Management of Perovskite Film by Co(II) Sulfophenyl Porphyrin for Efficient and Stable Solar Cells†

In the lead halide perovskite solar cells (PSCs), the redox reaction of I^– and Pb²⁺ ions in perovskite materials under the fabrication and operation processes causes the formation of defects to destroy the cell efficiency and long-term stability. Herein, we have employed a Co(II) sulfophenyl porphyrin (CoTPPS) to modify the perovskite film. The sulfonic group could coordinate with Pb²⁺ to efficiently passivate the uncoordinated Pb²⁺. Additionally, Co²⁺ ions in CoTPPS could react with I₂ generated under the thermal and light stress to yield the Co³⁺ and I^–, thus achieving the regeneration of I^– in perovskite film. Therefore, the CoTPPS could realize the targeted management of the imperfections in perovskite film. As a result, the modified PSCs reveal the remarkably enhanced cell performance. More importantly, the CoTPPS modified device retains 75% of its initial efficiency value storing at 85°C for 2000 h and about 70% of its efficiency when being continuously illuminated at a simulated sunlight for 1200 h. This strategy tackles the chemical reaction and inhibits the defect generation, thus improving the operational stability and efficiency of PSCs.