O2和CN在铜活化闪锌矿(110)表面的吸附

采用基于密度泛函理论(DFT)的平面波赝势法模拟了O₂和CN分子在铜活化闪锌矿(110)表面的吸附. 结果表明: 铜活化后闪锌矿表面的铜原子3d轨道处于费米能级附近, 增强了闪锌矿表面的活性. 未活化闪锌矿表面不能吸附O₂, 活化后闪锌矿表面的铜原子和硫原子提供电子填入氧的反键π_2p^*轨道从而形成吸附键. CN分子吸附模拟表明, 铜活化增强了CN分子与闪锌矿表面的吸附作用. Cu原子d轨道与C原子反键p轨道作用形成反馈π键, 同时C原子s轨道与Cu原子sp轨道作用形成共价键; CN分子中N原子与闪锌矿表面S原子发生相互作用.     

铜族金属与完整及氮掺杂石墨烯的相互作用

基于广义梯度密度泛函理论和周期平板模型,研究了铜族金属单原子和双原子簇与完整及氮掺杂石墨烯的结合情况.结果表明,氮掺杂后石墨烯的电子结构特性由半金属性变为金属性;铜族金属在完整及石墨型氮掺杂石墨烯上的吸附较弱,结合能约为0.5eV,而在吡啶型氮掺杂和吡咯型氮掺杂石墨烯上有较强的化学吸附,结合能一般大于1eV;吡咯型氮掺杂后的构型不稳定,金属原子及簇与包含该结构的石墨烯衬底作用时会使其向吡啶型氮掺杂转变,并最终得到基于吡啶型氮掺杂的稳定吸附构型.Mulliken电荷布居分析显示,吸附在吡啶型氮掺杂石墨烯上的金属单原子与金属双原子簇带电性质相反.态密度及轨道分析表明,Cu与吡啶型氮掺杂石墨烯空位处留有悬挂键的三个原子成键,而Au与其中两个C原子成键.     

Au@SiO2膜/Ti电极吸附吡啶的表面增强拉曼光谱研究

基于壳层隔绝纳米粒子增强拉曼光谱技术,合成了Au@SiO₂纳米粒子,并对其进行了相关表征. 结果表明,包裹的二氧化硅层连续、致密,Au@SiO₂膜/Ti电极上可获得金属钛电极上吸附吡啶分子的高质量表面增强拉曼光谱（SERS）信号. 通过Pt、Ni电极的测试,证实该信号源于吸附在基底表面的吡啶分子. 此外,Au@SiO₂膜/Ti电极上吸附吡啶分子的现场SERS光谱研究表明,在-0.1 V ~ -0.6 V电位区间,吡啶分子平躺吸附,从-0.6 V起吸附的吡啶分子由平躺逐转变为垂直,而当电位为-1.2 V时,电极表面析氢,吡啶脱附.     

电化学原位表面增强拉曼光谱研究Au@Pd纳米粒子薄膜电极上吸附 CO的斯塔克效应

电化学 Stark效应是指电极溶液界面的吸附物或金属-吸附物之间的化学键的振动频率随电极电势而发生变化的现象.研究该效应,可以更好地理解吸附物与基底的相互作用(如吸附构型、吸附取向和覆盖度等随电位的变化),也可反过来推断电极基底的电子构型及其随电势的变化规律,对理解电化学双电层的结构以及电催化反应的构效关系都很有帮助.多年以来,电极表面吸附 CO的电化学 Stark效应广受关注,是由于 CO为很多小分子氧化的中间产物,研究 CO的谱学行为,可加深对 CO以及其它能产生 CO中间物有机小分子的电催化氧化机理和动力学的理解;另一方面, CO与过渡金属之间普遍存在s给电子以及p反馈电子作用,因此 CO也可作为探针分子,通过考察 COad以及 M–COad的振动频率的变化,可推断相应条件下基底的电子与几何结构等信息.
　　本文使用电化学原位表面增强拉曼技术,在一个大的电势范围内考察了 Au@Pd纳米粒子薄膜电极上饱和吸附 CO的振动光谱行为,以期更好地理解 COad与基底的成键作用与电极电势之间的关系.由于纯 Pd电极表面的拉曼信号太弱,实验使用具有核壳结构的 Au@Pd纳米粒子薄膜作为模型电极,并利用 Au核的拉曼增强特性.宽广的电势范围约–1.5到0.55V vs. NHE,通过使用酸性、中性以及碱性电解质得以实现.实验考察的电势上限由 COad氧化起始电位决定,而下限由强烈氢析干扰测量所限制.结果表明,在检测的电势范围内, C–OM(M指在电极表面的桥式吸附CO和穴位吸附 CO所形成的谱带重叠)和 Pd–COM键的振动频率可以分为三段： dνC–OM/dE在–1.5~–1.2 V范围内是185~207 cm–1/V,在–1.2~–0.15 V是83~84 cm–1/V,在–0.2~0.55 V是43 cm–1/V;而 dνPd–COM/dE在–1.5~–1.2 V范围内是–10~–8 cm–1/V,在–1.2~–0.15 V是–31~–30 cm–1/V,在–0.2~0.55 V是–15 cm–1/V.与同时记录的极化曲线对比,认为在中性和碱性介质中所观察到 dνC–OM/dE在–1.2 V附近的急剧变化与电极表面发生了强烈的析氢反应有关.另外,结合密度泛函理论模型计算,认为共吸附的 H减少了 COad从桥式构型到穴位构型的转变,在酸性介质中这种变化不明显,可能是由于对应的电势较高,桥式吸附的 CO比例越大,桥式向穴位的转变本身相对较少.     

一氧化碳共吸附法确定叔丁胺分子在Cu(111)表面的吸附位

采用扫描隧道显微镜(STM)和密度泛函理论(DFT)研究了78 K时单个叔丁胺分子在Cu(111)表面的吸附位. 我们提出以共吸附的一氧化碳√3 ×√3 超结构为基底铜原子的标识方法, 确定了低覆盖度的叔丁胺分子在Cu(111)表面的吸附位为顶位. 而采用单个一氧化碳分子标识基底铜原子的位置, 同样得出了叔丁胺分子的吸附位为顶位. 此外, 还采用DFT计算叔丁胺分子在Cu(111)表面的优势吸附构型. 理论计算结果表明顶位吸附构型为能量最稳定的构型, 与实验结果相吻合.     

ECSTM针尖诱导构筑Au表面有序Pd纳米粒子阵列

利用电化学扫描隧道显微镜(ECSTM)在温和的电化学和隧道偏压的条件下诱导电极表面发生特定的局域电化学反应, 在Au(111)单晶电极表面构筑了Pd纳米粒子的阵列. 研究了两种不同的溶液体系(PdCl2和PdSO4)构筑纳米粒子所需设定的不同参数, 同时探讨了选择不同参数的原因.     

α,β-不饱和醛在Ni-Pt(111)面上吸附的理论研究

利用密度泛函理论研究了巴豆醛和肉桂醛分子在Pt-Ni-Pt(111)面的吸附构型以及相关电子性质. 吸附构型与吸附能结果表明, 巴豆醛和肉桂醛在覆盖度为1/25 ML的条件下, 以C=C和C=O双键协同吸附在Pt-Ni-Pt(111)面较为稳定, 且肉桂醛与Pt-Ni-Pt(111)面的吸附能远大于巴豆醛. 由Mulliken电荷布局和差分电荷密度可知, 在吸附过程中肉桂醛分子向Pt-Ni-Pt(111)面上转移的电荷数较巴豆醛更多, 相互作用更大. 由电子态密度分析结果可知, 不饱和醛与Pt-Ni-Pt(111)面的吸附作用主要是由于分子的p轨道电子与催化剂d轨道电子之间的相互作用. 由于苯基的存在使肉桂醛分子在Pt-Ni-Pt(111)面上的吸附更强, 且平行于催化剂表面.     

金/铜纳米异质界面的电荷转移等离激元调控

金属纳米结构由于其独特的局域表面等离激元共振现象而倍受关注,对催化、传感、纳米医学以及光学器件等具有重要意义.电荷转移等离激元共振强烈依赖于纳米单元间的导电结点,可产生频率连续可调的共振光吸收和光散射,为获得高度局域化的增强光磁场和光热效应提供了可能.然而,受制于已有构筑手段和有限的结构种类,相关研究仍处于初级阶段.针对此,本工作发展了一种十分简单、有效的Au/Cu纳米异质结点调控策略,利用廉价易得的天然DNA分子在金纳米粒子“种子”表面发生非特异性吸附,有效控制铜在金表面发生异相成核时的相间接触面积,得到导电结点宽度连续可调的电荷转移纳米粒子二聚体.实验光谱和理论模拟显示,结点宽度、铜和金纳米粒子的尺寸是决定电荷转移等离激元性质的重要参数,其分别可由DNA吸附量、Cu²⁺加入量和金纳米粒子尺寸加以控制,进而实现共振波长在可见至近红外区的宽广调节.通过与其它吸附分子对比证明了DNA吸附调控模式的独特性.这种具有可调控导电结点的双金属纳米异质界面为实现电荷转移等离激元共振与催化和传感等功能的集成以及相关应用探索奠定了重要基础.     

电化学原位表面增强拉曼光谱研究Au@Pd纳米粒子薄膜电极上吸附CO的斯塔克效应（英文）

电化学Stark效应是指电极溶液界面的吸附物或金属-吸附物之间的化学键的振动频率随电极电势而发生变化的现象.研究该效应,可以更好地理解吸附物与基底的相互作用(如吸附构型、吸附取向和覆盖度等随电位的变化),也可反过来推断电极基底的电子构型及其随电势的变化规律,对理解电化学双电层的结构以及电催化反应的构效关系都很有帮助.多年以来,电极表面吸附CO的电化学Stark效应广受关注,是由于CO为很多小分子氧化的中间产物,研究CO的谱学行为,可加深对CO以及其它能产生CO中间物有机小分子的电催化氧化机理和动力学的理解;另一方面,CO与过渡金属之间普遍存在σ给电子以及π反馈电子作用,因此CO也可作为探针分子,通过考察CO_(ad)以及M–CO_(ad)的振动频率的变化,可推断相应条件下基底的电子与几何结构等信息.本文使用电化学原位表面增强拉曼技术,在一个大的电势范围内考察了Au@Pd纳米粒子薄膜电极上饱和吸附CO的振动光谱行为,以期更好地理解CO_(ad)与基底的成键作用与电极电势之间的关系.由于纯Pd电极表面的拉曼信号太弱,实验使用具有核壳结构的Au@Pd纳米粒子薄膜作为模型电极,并利用Au核的拉曼增强特性.宽广的电势范围约–1.5到0.55V vs.NHE,通过使用酸性、中性以及碱性电解质得以实现.实验考察的电势上限由COad氧化起始电位决定,而下限由强烈氢析干扰测量所限制.结果表明,在检测的电势范围内,C–OM(M指在电极表面的桥式吸附CO和穴位吸附CO所形成的谱带重叠)和Pd–COM键的振动频率可以分为三段:dνC–O_M/d E在–1.5~–1.2 V范围内是185～207 cm~(–1)/V,在–1.2~–0.15 V是83～84 cm~(–1)/V,在–0.2～0.55 V是43 cm~(–1)/V;而dν_(Pd–COM)/d E在–1.5~1.2 V范围内是–10～–8 cm~(–1)/V,在–1.2~–0.15 V是–31~–30 cm~(–1)/V,在–0.2～0.55 V是–15 cm~(–1)/V.与同时记录的极化曲线对比,认为在中性和碱性介质中所观察到dν_(C–OM)/d E在–1.2 V附近的急剧变化与电极表面发生了强烈的析氢反应有关.另外,结合密度泛函理论模型计算,认为共吸附的H减少了CO_(ad)从桥式构型到穴位构型的转变,在酸性介质中这种变化不明显,可能是由于对应的电势较高,桥式吸附的CO比例越大,桥式向穴位的转变本身相对较少.     

铜-氧化铈界面:几何及电子结构

纳米催化材料的性能主要由粒子尺寸、形貌和界面决定,即活性位点的电子及几何结构.尺寸、形貌可控的纳米催化材料的合成及其反应性能的研究,即催化剂的构效关系,一直是催化领域的研究热点.氧化物负载的金属催化剂广泛应用于多相催化反应过程.基于氧化铈优异的氧化还原性能, Cu/CeO2催化剂在CO氧化、N2O消除、水气变换、甲醇合成等反应中表现出优异性能.其中,通过铜物种与氧化铈表面化学键合形成的金属-载体界面通常被认为是催化活性中心.铜物种和氧化铈的相互作用主要体现在氧化铈固定铜物种,而铜物种促进氧化铈的氧化还原能力,涉及Cu^2+/Cu^+/Cu^0和Ce^3+/Ce^4+之间电子的传输和转移.Cu/CeO2催化剂活性位的原子结构与金属-载体相互作用程度密切相关.氧化铈形貌和铜负载量是决定界面电子和几何结构的重要因素.常见的纳米氧化铈形貌包括纳米粒子(多面体)、纳米棒和纳米立方体,可分别选择性暴露(111)、(110)和(100)晶面;这些晶面上原子配位环境和化学性能决定了铜-氧化铈的键合方式和界面结构.与暴露{100}晶面的纳米立方体相比,主要暴露{100}/{110}镜面的氧化铈纳米棒、暴露{111}/{100}晶面的纳米粒子与铜物种具有更强的金属-载体相互作用程度,也更有利于铜物种的分散.铜的负载量也显著影响铜物种在特定氧化铈表面的分散度和化学状态;随着铜负载量的增加,可在氧化铈表面形成层状铜、铜团簇和铜纳米粒子.通常情况下,低负载量有利于单层、双层铜物种的形成,高负载量时则出现多层铜和铜纳米粒子.催化活性位通常是由铜原子与氧化铈上的氧空穴相互作用产生,与氧化铈表面氧空穴的数量和密度密切相关,即氧化铈形貌.本文总结了Cu/CeO2催化剂的研究进展,讨论了氧化铈形貌和铜负载量对铜物种分散度和化学状态的影响规律,总结了铜氧化铈界面结构的多维度表征结果,比较了Cu/CeO2催化剂在CO氧化、水气变换及甲醇合成中的活性位结构和反应机制.     

Electron tunneling through molecular media: a density functional study of Au/Dithiol/Au systems.

We report a density functional theory study of the electronic properties of n-alkanedithiols (CnS2, with n=4, 8 and 12) sandwiched between two Au(111) infinite slab electrodes. We investigate the influence of the distance between the two electrodes and of the molecular chain length, tilt angle, and coverage on the local density of states (LDOS) at the Fermi energy (E(f)). We find that the (small) value of the LDOS at Ef near the center of the molecular wires--a quantity that is related to the tunneling current--is mainly determined by the length n of the alkane chains: it originates from the tails of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) which are broadened by the interaction with the electrodes, and decays exponentially with the length of the molecular wire. This opens a nonresonance tunneling channel for charge transport at small bias voltages. While the length of the hydrocarbon chain appears to be the determining factor, the tilt angle of the molecular wires with respect to the electrode surfaces, and therefore the distance between these, has a small influence on the LDOS at the center of the molecule, while the effect of coverage can be ignored. The picture which emerges from these calculations is totally consistent with a through-bond tunneling mechanism.     

探讨电化学界面的原子－分子世界（厦门大学电化学研究工作简介之一）

探讨电化学界面的原子－分子世界（厦门大学电化学研究工作简介之一）田昭武（固体表面物理化学国家重点实验室,厦门大学化学系,厦门３６１００５）厦门大学电化学研究工作内容包括：基础研究、新研究方法与仪器的研制以及应用研究。拟在本刊陆续予以介绍。作为厦门大学...     

Iridium–Titanium Textured Electrodes: Production and Investigation by Electrochemical Scanning Tunneling Microscopy and Spectroscopy

A technique for the production of perfect thin-layered Ir coatings on inert Ti supports is developed. The highly textured coatings have some potential uses. Local topography and energy nonuniformness of the surface of such Ir electrodes are studied by electrochemical scanning tunneling microscopy (ESTM) and scanning tunneling spectroscopy (STS). In situ STM images of Ir–Ti textured electrodes with axial texture (111) are obtained with an atomic resolution at potentials of 0.3 to 1.2 V, in 0.05 M H₂SO₄ as well. Energy states of surfaces of Ir–Ti textured electrodes are studied with an atomic resolution using in situ STS by distance and voltage. Dependences of the tunneling current on the tunneling voltage and the tunneling-gap width are measured at Ir-surface potentials of 0.3 to 1.2 V. Effective potential barrier for the electron tunneling is estimated at different potentials of Ir.     

Morphology of platinum electrodeposits in the three-dimensional sublayer to full layer range produced under different potential modulations on highly oriented pyrolytic graphite

The topography of platinum electrodes produced by electrodeposition (19 to 200 mC cm-2) on highly oriented pyrolytic graphite (HOPG) under different potential modulations was investigated by atomic force microscopy, scanning tunneling microscopy, and H-atom electrosorption voltammetry. To modulate electrodeposition, (i) triangular potential cycling at 0.1 V s-1, (ii) a linear cathodic potential at 0.1 V s-1 and anodic potential step cycling, and (iii) square wave potential cycling at 5000 Hz were utilized. AFM and STM imaging showed that at lower platinum loading the HOPG surface was partially covered by a 3D sublayer of platinum. Electrodes produced by procedure (i) were made of faceted platinum aggregates of about 200 nm and nanoclusters in the range of 5-20 nm; those that resulted from procedure (ii) consisted of anisotropic aggregates of nanoclusters arranged as quasi-parallel domains. These electrodes from (i) and (ii) behaved as fractal objects. The electrodes resulting from procedure (iii) exhibited a flat surface that behaved as a Euclidean object. For all WEs, as the platinum loading was increased the HOPG surface was fully covered by a thin 3D layer of platinum aggregates produced by electrodeposition and coalescence phenomena. Large platinum loading led to electrodes with fractal geometry. Statistical parameters (root-mean-square height, skewedness, kurtosis, anisotropy, Abbot curve, number of protrusions and valleys, and fractal dimension) were obtained from the analysis of AFM and STM imaging data. Platinum electrodeposition coupled to either H-adatom formation for procedures (i) and (ii) or phonon dispersion for (iii) was involved in the surface atom rearrangements related to electrofaceting. The H-adatom electrosorption voltammetry data were used to evaluate the real electrode surface area via the voltammetric charge and to advance a tentative explanation of the contribution of the different crystallographic facets to the global electrochemical process dominated by weak H-Pt adsorption interactions.     

Blue-phase liquid crystal display with high dielectric material

A blue-phase liquid crystal display (BPLCD) with low operating voltage and high transmittance is demonstrated by using a high dielectric material, which is used as an insulation layer or protrusion fixed on the pixel and common electrodes in in-plane switching (IPS) mode. The operating voltage is reduced to about 14 V and the transmittance is improved for the BPLCD with high dielectric constant protrusion. Compared with the conventional protrusion electrode structure, the proposed protrusion can make manufacturing process simple and easy because the electrode has no complex shape. The results will be significant in designing optimal BPLCDs.     

A molecular half-wave rectifier

This paper describes the performance of junctions based on self-assembled monolayers (SAMs) as the functional element of a half-wave rectifier (a simple circuit that converts, or rectifies, an alternating current (AC) signal to a direct current (DC) signal). Junctions with SAMs of 11-(ferrocenyl)-1-undecanethiol or 11-(biferrocenyl)-1-undecanethiol on ultraflat, template-stripped Ag (Ag(TS)) bottom electrodes, and contacted by top electrodes of eutectic indium-gallium (EGaIn), rectified AC signals, while similar junctions based on SAMs of 1-undecanethiol-SAMs lacking the ferrocenyl terminal group-did not. SAMs in these AC circuits (operating at 50 Hz) remain stable over a larger window of applied bias than in DC circuits. AC measurements, therefore, can investigate charge transport in SAM-based junctions at magnitudes of bias inaccessible to DC measurements. For junctions with SAMs of alkanethiols, combining the results from AC and DC measurements identifies two regimes of bias with different mechanisms of charge transport: (i) low bias (|V| < 1.3 V), at which direct tunneling dominates, and (ii) high bias (|V| > 1.3 V), at which Fowler-Nordheim (FN) tunneling dominates. For junctions with SAMs terminated by Fc moieties, the transition to FN tunneling occurs at |V| ≈ 2.0 V. Furthermore, at sufficient forward bias (V > 0.5 V), hopping makes a significant contribution to charge transport and occurs in series with direct tunneling (V ? 2.0 V) until FN tunneling activates (V ? 2.0 V). Thus, for Fc-terminated SAMs at forward bias, three regimes are apparent: (i) direct tunneling (V = 0-0.5 V), (ii) hopping plus direct tunneling (V ≈ 0.5-2.0 V), and (iii) FN tunneling (V ? 2.0 V). Since hopping does not occur at reverse bias, only two regimes are present over the measured range of reverse bias. This difference in the mechanisms of charge transport at forward and reverse bias for junctions with Fc moieties resulted in large rectification ratios (R > 100) and enabled half-wave rectification.     

基于电化学方法研究以铜和银为电极的对苯二甲酸单分子结电导

利用基于电化学跳跃接触的扫描隧道显微镜裂结法(ECSTM-BJ), 通过现场形成金属电极, 对以Cu和Ag为电极的对苯二甲酸单分子结电导进行了测量. 研究结果表明: 利用该方法对所有数据直接线性统计即可得到很好结果; 两种电极下都存在两套高和低电导值, 其中以Cu为电极的单分子结电导高低值分别为11.5和4.0 nS, 而以Ag为电极的单分子结电导分别为10.3和3.8 nS, 高值都约为低值的3倍, 且以Cu为电极的单分子结电导要略大于以Ag为电极的电导, 可归结于电极和分子的耦合不同造成的. 与同样条件下测量得到的烷基链羧酸单分子结电导只存在一套值相比,对苯二甲酸表现出两套电导值, 反应了分子内主链对分子结电导的影响.     

Fabrication of Two-dimensional Monolayer and One-dimensional Wire of Zn-tetra-[3,5-di-t-butylphenyl]-porphyrin on Cu(100) Surface

1 INTRODUCTION Metalloporphyrins and their derivatives having been intensively studied play an important role in biological processes, such as oxygen transport and photosynthesis. They can act as catalysts[1] and un- dergo reversible redox reactions in which the site of electron transfer may be localized on the porphyrin ring or the central metal ion. Both reactions are important in natural processes[2]. Recently, it hasbecome known that structural distortion from planar geometry is fairl…     

Fabrication and investigation of nanostructures on transition metal dichalcogenide surfaces using a scanning tunneling microscope

Nanometer-scale holes have been fabricated on the surfaces of the semiconducting transition metal dichalcogenides (TMDCs) molybdenum ditelluride (MoTe2) and molybdenum disulfide (MoS2) by applying voltage pulses from the tip of a scanning tunneling microscope (STM) operating in ultrahigh vacuum (UHV). It was found that the tip geometry (tip shape and sharpness) influences the formation and structure of the atomic-scale nanostructures. Threshold voltage ranges for the surface modification of MoTe2 (3.0 +/- 0.3 V) and MoS2 (3.4 +/- 0.3 V) were determined. Negative sample voltage pulses applied to a p-type MoTe2 surface produced much larger and deeper nanometer-scale holes when compared with those produced by positive voltage pulses. The existence of threshold voltages and the pulse polarity dependence of nanostructure fabrication suggests that an electric field evaporation mechanism is applicable. Support for this mechanism was obtained by nanostructuring metallic TMDC NbSe2, where both the produced features and the threshold voltages (3.0 +/- 0.3 V) were similar for both positive and negative voltage pulses.     

Optimisation of blue-phase liquid crystal with protrusion

The optimised structures of blue-phase liquid crystal display (BPLCD) with various protrusions were discussed in this article. The voltage-dependent transmittances for the cell with four protrusion shapes, wall-shaped electrode, trapezoid electrode, double penetration electrode and elliptical electrode, are simulated. The electrode gap and width and protrusion height’s effects on the optimised cell gap and the corresponding operating voltage are calculated. The optimised cell has the lowest operating voltage and relative high transmittance. The results are significant on design BPLCD with low operating voltage.