硼掺杂多晶金刚石薄膜电极的电化学特性

用循环伏安法和恒电位法研究了硼掺杂多晶金刚石薄膜电极（ＤＦＥ）的若干电化学特性。电极面积４×４ｍｍ＾２。在０．１ｍｏｌ／Ｌ ＫＣｌ，ＮａＮＯ３，ＮａＯＨ和ＫＨ２ＰＯ４＋Ｎａ２ＨＰＯ４（ｐＨ＝６．８６）电解质溶液中电势窗口均为－５００￣＋８００ｍＶ；而在０．１ｍｏｌ／Ｌ ＨＣｌ和Ｈ２ＳＯ４溶液中电势窗口为－２００￣＋１１００ｍＶ．Ｋ３Ｆｅ（ＣＮ）６的氧化峰电位为＋５００ｍＶ，与Ｐｔ电极测量相同；校正     

高电势铁硫蛋白的模型化合物：2,4,6—三苯基苯硫酚的4Fe4S簇合 …

新型簇合物（ｎ－Ｂｕ４Ｎ）２「Ｆｅ４Ｓ４（ｔｐｂｔ）４」（ｔｐｂｔ－２，４，６－三苯基苯硫酚基）通过２，４，６－三苯基苯硫酚和（ｎ－Ｂｕ４Ｎ）２「Ｆｅ４Ｓ４９Ｓ－ｔ－Ｂｕ０４」在ＤＭＦ中进行配体交换反应合成得到。该簇合物在ＣＨ３ＣＮ溶液中的「Ｆｅ４Ｓ４」＾３＋／２＋和「Ｆｅ４Ｓ４」＾２＋１／＋的氧化还原电位分别为－０．１４和－１．３１ＶｖｓＳＣＥ。     

锡—β—巯基丙酸极谱络合吸附波的研究及在食品分析中的应用

在ｐＨ４．２的ＨＣｌ－ＮａＡｃ缓冲溶液中，Ｓｎ（Ⅳ）－β－巯基丙酸（ＭＰＡ）络合物产生一灵敏的极谱吸附波，峰电位在－０．６０Ｖ（ｖｓ．ＳＣＥ），峰高与Ｓｎ浓度在４．２×１０－９～３．４×１０－６ｍｏｌ／Ｌ范围内呈线性关系，检出限为２．０×１０－９ｍｏｌ／Ｌ。本文对极谱波的性质和电极反应机理进行了研究。本法用于罐头食品中痕量锡的测定，结果满意。     

含氮聚硅氧烷配位体及其与金属离子的络合作用

研究ｎ－β（氨乙基）－γ（氨丙基）三乙氧基硅烷［ＮＨ２（ＣＨ２）２ＮＨ（ＣＨ２）３Ｓｉ（ＯＥｔ）３］与二甲基二乙氧基硅烷［（ＣＨ３）２Ｓｉ（ＯＥｔ）２］共水解，制备含－（ＣＨ２）３ＮＨ（ＣＨ２）２ＮＨ２功能基的聚硅氧烷配位体。用ＩＲ、１ＨＮＭＲ和元素分析法对共聚产物的结构进行了分析，同时用紫外－可见光谱法和ＳＥＭ考察了共聚产物与Ｃｕ２＋等金属离子的络合作用。结果发现，两种单体进行了共水解反应，而且随着ＮＨ２（ＣＨ２）２ＮＨ（ＣＨ２）３Ｓｉ（ＯＥｔ）３比例增加，水解程度提高。共聚产物可以与Ｃｕ２＋离子形成稳定的络合物，但不能与Ｚｎ２＋离子或Ａｌ３＋离子形成稳定的络合物或螯合物。     

桑色素荧光光度法测定二氯化双(丁氧羰乙基)锡

在ｐＨ３．０的ＨＡｃ－ＮａＡｃ缓冲溶液中和有Ｔｒｉｔｏｎ Ｘ－１００存在下,二氯化双（丁氧羰乙基）锡（简写为Ｒ２ＳｎＣｌ２）与桑色素形成１：１的荧光络合物。络合物的激发波长和发射波长分别为４４３．２ｎｍ和５１４。４ｎｍ。Ｒ２ＳｎＣｌ２中的Ｓｎ浓度在０￣３．０ｍｇ／Ｌ范围内,与络合物荧光强度呈线性关系。方法检出限为７．８１μｇ／Ｌ Ｓｎ,用于ＰＶＣ中间产品和污水中Ｒ２ＳｎＣｌ２的测定,结果满意,相对     

脱氧核糖核酸变性和损伤的吸附伏安法研究

本文用汞电极（ＨＭＤＥ）二次导数阴极吸附伏安（ＳＤ－ＡｄＣＳＶ）和碳电极（ＧＣＥ、ＣＰＥ）导数循环伏安（ＦＤ－ＣＶ）法研究了核酸受热、紫外线、超声波和丝裂霉素Ｃ（ＭＭＣ）作用下的变性作用。在０．１ｍｏｌ／Ｌ（Ｋ２ＨＰＯ４＋ＫＨ２ＰＯ４）－０．１ｍｏｌ．Ｌ ＮａＣｌ（ｐＨ７．０）底液中，吸附的单股（ｓｓ－）和双螺旋（ｄｓ－）ＤＮＡ分别在ＨＭＤＥ上得到特征还原峰Ｐ３和Ｐ２，和在碳电极上得到氧化峰Ａ。物     

抗癌药物博莱霉素伏安行为及其反应机理研究

博莱霉素（ＢＬＥＯ）Ａ５在０．０５ｍｏｌ／Ｌ Ｈ２ＳＯ４溶液中出现两个还原波，峰电位分别为ＥＰ１＝－０．８３Ｖ和ＥＰ２＝－１．０９Ｖ（ｖｓ．，Ａｇ／ＡｇＣｌ）。用线性扫描与循环伏安法、恒电位库仑法、脉冲极谱、交流极谱等手段研究体系的伏安行为及反应机理。实验表明，Ｐ１为ＢＬＥＯＡ５分子中嘧啶环第一步两电子还原的吸附波，Ｐ２为嘧啶环第二、三步还原和催化氢还原的具有吸附性的重叠波。     

含硅二硫代磷酸酯的合成及生物活性

硅基甲硫醇Ｒ＾１Ｒ＾２ＣＨ３ＳｉＣＨ２ＳＨ与Ｏ，Ｏ－二烷基二硫代磷酸酯（ＲＯ）２Ｐ（Ｓ）ＳＨ及甲醛可顺利地发生类Ｍａｎｎｉｃｈ缩合反应，利用此反应和硅基甲硫醇与Ｏ，Ｏ－二乙基－Ｓ（２－溴乙基）二硫代磷酸酯的取代反应合成了３７种新的含硅二硫代到酯化合物（ＲＯ）２Ｐ（Ｓ）Ｓ（ＣＨ２）ｎＳＣＨ２ＳｉＣＨ３Ｒ＾１Ｒ＾２（ｎ＝１，２），在初筛浓度下，该类化合物具有一定的杀虫，杀螨活性。     

含有吸附络合物溶液的倒数示波计时电位法的应用

Ｐｂ（Ⅱ）在０．２％乙二胺－５×１０＾－３ｍｏｌ·Ｌ＾－１ＨＯｘ－０．３ｍｏｌ·Ｌ＾－１ＫＯＨ溶液中，有良好的全数示波图，其峰电位Ｅｐ＝－１．０５（ｖｓ．ＳＣＥ），峰高与Ｐｂ＾２＋溶度在４．０×１０＾－７～２．０×１０＾－５ｍｏｌ·Ｌ＾－１内成正比，检测下限可达２．０×１０＾－７ｍｏｌ·Ｌ＾－１。本实验采用倒数示波计时电位法对铝合金“Ａ”中铅进行了测定，并直接通过示波图，对络合物的吸附属于性进行了     

利用质谱—质谱法进行稠环芳烃化合物的结构解析

应用（ＥＩ）ＭＳ／ＭＳ法研究了吡啶并苯并蒽酮以及苯并苯并蒽酮类异构体的裂解方式及其与结构之间的相关性，探讨了不同异构体中由Ｍ＾ｉ＋产生的［Ｍ－Ｈ］＾＋、［Ｍ－ＨＣＮ］＾＋、［Ｍ－ＣＯＨ］＾＋、［Ｍ－ＣＯ］＾ｉ＋、［Ｍ－（ＣＯ＋２Ｈ）］＾ｉ＋以及［Ｍ－（ＣＯ＋ＨＣＮ）］＾ｉ＋（ｉ＝１，２）等１价及２价离子在ＭＳ／ＭＳ－ＣＩＤ谱上的强度差异和裂解方式，发现是否含有氮原子以及氮原子和苯环位置的差异，是支     

A Gaussian-3 theoretical study of small silicon-lithium clusters: electronic structures and electron affinities of SinLi(-) (n = 2-8)

The molecular structures of neutral Si n Li ( n = 2-8) species and their anions have been studied by means of the higher level of the Gaussian-3 (G3) techniques. The lowest energy structures of these clusters have been reported. The ground-state structures of neutral clusters are "attaching structures", in which the Li atom is bound to Si n clusters. The ground-state geometries of anions, however, are "substitutional structures", which is derived from Si n+1 by replacing a Si atom with a Li (-). The electron affinities of Si n Li and Si n have been presented. The theoretical electron affinities of Si n are in good agreement with the experiment data. The reliable electron affinities of Si n Li are predicted to be 1.87 eV for Si 2Li, 2.06 eV for Si 3Li, 2.01 eV for Si 4Li, 2.61 eV for Si 5Li, 2.36 eV for Si 6Li, 2.21 eV for Si 7Li, and 3.18 eV for Si 8Li. The dissociation energies of Li atom from the lowest energy structures of Si n Li and Si atom from Si n clusters have also been estimated respectively to examine relative stabilities.     

Singly and doubly lithium doped silicon clusters: geometrical and electronic structures and ionization energies

The geometric structures of neutral and cationic Si(n)Li(m)(0/+) clusters with n = 2-11 and m = 1, 2 are investigated using combined experimental and computational methods. The adiabatic ionization energy and vertical ionization energy (VIE) of Si(n)Li(m) clusters are determined using quantum chemical methods (B3LYP/6-311+G(d), G3B3, and CCSD(T)/aug-cc-pVxZ with x = D,T), whereas experimental values are derived from threshold photoionization experiments in the 4.68-6.24 eV range. Among the investigated cluster sizes, only Si(6)Li(2), Si(7)Li, Si(10)Li, and Si(11)Li have ionization thresholds below 6.24 eV and could be measured accurately. The ionization threshold and VIE obtained from the experimental photoionization efficiency curves agree well with the computed values. The growth mechanism of the lithium doped silicon clusters follows some simple rules: (1) neutral singly doped Si(n)Li clusters favor the Li atom addition on an edge or a face of the structure of the corresponding Si(n)(-) anion, while the cationic Si(n)Li(+) binds with one Si atom of the bare Si(n) cluster or adds on one of its edges, and (2) for doubly doped Si(n)Li(2)(0/+) clusters, the neutrals have the shape of the Si(n+1) counterparts with an additional Li atom added on an edge or a face of it, while the cations have both Li atoms added on edges or faces of the Si(n)(-) clusters.     

Semiconducting behavior of type-I Si clathrate K8Ga8Si38

A ternary type-I Si clathrate K(8)Ga(8)Si(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E(g)) of approximately 0.10 eV, which is much smaller than the calculated E(g) value that is 0.15 eV wider than E(g) of elemental Si with the diamond-type structure.     

Silicon monohydride clusters Si(n)H (n = 4-10) and their anions: structures, thermochemistry, and electron affinities

The molecular structures, electron affinities, and dissociation energies of the Si(n)H/Si(n)H- (n = 4-10) species have been examined via five hybrid and pure density functional theory (DFT) methods. The basis set used in this work is of double-zeta plus polarization quality with additional diffuse s- and p-type functions, denoted DZP++. The geometries are fully optimized with each DFT method independently. The three different types of neutral-anion energy separations presented in this work are the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). The first Si-H dissociation energies, D(e)(Si(n)H --> Si(n) + H) for neutral Si(n)H and D(e)(Si(n)H- --> Si(n)- + H) for anionic Si(n)H- species, have also been reported. The structures of the ground states of these clusters are traditional H-Si single-bond forms. The ground-state geometries of Si5H, Si6H, Si8H, and Si9H predicted by the DFT methods are different from previous calculations, such as those obtained by Car-Parrinello molecular dynamics and nonorthogonal tight-binding molecular dynamics schemes. The most reliable EA(ad) values obtained at the B3LYP level of theory are 2.59 (Si4H), 2.84 (Si5H), 2.86 (Si6H), 3.19 (Si7H), 3.14 (Si8H), 3.36 (Si9H), and 3.56 (Si10H) eV. The first dissociation energies (Si(n)H --> Si(n) + H) predicted by all of these methods are 2.20-2.29 (Si4H), 2.30-2.83 (Si5H), 2.12-2.41 (Si6H), 1.75-2.03 (Si7H), 2.41-2.72 (Si8H), 1.86-2.11 (Si9H), and 1.92-2.27 (Si10H) eV. For the negatively charged ion clusters (Si(n)H- --> Si(n)- + H), the dissociation energies predicted are 2.56-2.69 (Si4H-), 2.80-3.01 (Si5H-), 2.86-3.06 (Si6H-), 2.80-3.03 (Si7H-), 2.69-2.92 (Si8H-), 2.92-3.18 (Si9H-), and 2.89-3.25 (Si10H-) eV.     

Si(CH3)2Cl2分子的电离电势和化学键能的测定

有机硅化合物是半导体工业中产生硅元件的基本原料和有机合成中的重要试剂，是多年来大家研究较多的分子体系之一．本文报导了用同步辐射加速器产生的真空紫外光，电离St（CH3hCI。分子．在50－120n－m波长范围内，测量了各种离子产物与真空紫外光波长的关系，推算得它的绝热电离电势和离子中几个化学键的键能．1实验装置和方法本工作在国家同步辐射实验室光化学实验站进行．进行分子真空紫外光电离研究的实验系统已在文献山中详细描述．同步辐射加速器产生的真空紫外光波长用Ne气的电离势标定，其误差＜士0－Inln．单色仪的分辨率为河凸…     

High-resolution X-ray photoelectron spectroscopic studies of alkylated silicon(111) surfaces

Hydrogen-terminated, chlorine-terminated, and alkyl-terminated crystalline Si(111) surfaces have been characterized using high-resolution, soft X-ray photoelectron spectroscopy from a synchrotron radiation source. The H-terminated Si(111) surface displayed a Si 2p(3/2) peak at a binding energy 0.15 eV higher than the bulk Si 2p(3/2) peak. The integrated area of this shifted peak corresponded to one equivalent monolayer, consistent with the assignment of this peak to surficial Si-H moieties. Chlorinated Si surfaces prepared by exposure of H-terminated Si to PCl5 in chlorobenzene exhibited a Si 2p(3/2) peak at a binding energy of 0.83 eV above the bulk Si peak. This higher-binding-energy peak was assigned to Si-Cl species and had an integrated area corresponding to 0.99 of an equivalent monolayer on the Si(111) surface. Little dichloride and no trichloride Si 2p signals were detected on these surfaces. Silicon(111) surfaces alkylated with CnH(2n+1)- (n = 1 or 2) or C6H5CH2- groups were prepared by exposing the Cl-terminated Si surface to an alkylmagnesium halide reagent. Methyl-terminated Si(111) surfaces prepared in this fashion exhibited a Si 2p(3/2) signal at a binding energy of 0.34 eV above the bulk Si 2p(3/2) peak, with an area corresponding to 0.85 of a Si(111) monolayer. Ethyl- and C6H5CH2-terminated Si(111) surfaces showed no evidence of either residual Cl or oxidized Si and exhibited a Si 2p(3/2) peak approximately 0.20 eV higher in energy than the bulk Si 2p(3/2) peak. This feature had an integrated area of approximately 1 monolayer. This positively shifted Si 2p(3/2) peak is consistent with the presence of Si-C and Si-H surface functionalities on such surfaces. The SXPS data indicate that functionalization by the two-step chlorination/alkylation process proceeds cleanly to produce oxide-free Si surfaces terminated with the chosen alkyl group.     

Au atoms and dimers on the MgO(100) surface: a DFT study of nucleation at defects

The adsorption of Au atoms at the surface of MgO and the formation of Au dimers have been studied by means of first principles DFT supercell calculations. Au atoms have been adsorbed on flat MgO terraces and monatomic steps but also at point defects such as oxygen vacancies (F centers) or divacancies. Very low barriers for diffusion of Au atoms on the MgO(100) terraces have been found. Atom diffusion is stopped only at strong binding sites such as the F and F+ centers (adsorption energy E(a) = 3-4 eV), divacancies (E(a) = 2.3 eV), or, to less extent, steps (E(a) = 1.3 eV). The combination of two Au adatoms with formation of a dimer is accompanied by an energy gain, the dimer binding energy, E(b), between 2 and 2.4 eV for all sites considered, with the exception of the paramagnetic F+ center where the gain is negligible (0.3 eV). The dimerization energy on the surface is not too different from the bond strength of Au2 in the gas phase (2.32 eV). Thus, defects sites on MgO do not have a special role in promoting or demoting Au dimerization, while they are essential to trap the diffusing Au atoms or clusters. Calculations on Au3 formed on an F center show that the cluster is fluxional.     

In situ x-ray photoelectron spectroscopic and density-functional studies of Si atoms adsorbed on a C60 film

The interaction between C(60) and Si atoms has been investigated for Si atoms adsorbed on a C(60) film using in situ x-ray photoelectron spectroscopy (XPS) and density-functional (DFT) calculations. Analysis of the Si 2p core peak identified three kinds of Si atoms adsorbed on the film: silicon suboxides (SiO(x)), bulk Si crystal, and silicon atoms bound to C(60). Based on the atomic percent ratio of silicon to carbon, we estimated that there was approximately one Si atom bound to each C(60) molecule. The Si 2p peak due to the Si-C(60) interaction demonstrated that a charge transfer from the Si atom to the C(60) molecule takes place at room temperature, which is much lower than the temperature of 670 K at which the charge transfer was observed for C(60) adsorbed on Si(001) and (111) clean surfaces [Sakamoto et al., Phys. Rev. B 60, 2579 (1999)]. The number of electrons transferred between the C(60) molecule and Si atom was estimated to be 0.59 based on XPS results, which is in good agreement with the DFT result of 0.63 for a C(60)Si with C(2v) symmetry used as a model cluster. Furthermore, the shift in binding energy of both the Si 2p and C 1s core peaks before and after Si-atom deposition was experimentally obtained to be +2.0 and -0.4 eV, respectively. The C(60)Si model cluster provides the shift of +2.13 eV for the Si 2p core peak and of -0.28 eV for the C 1s core peak, which are well corresponding to those experimental results. The covalency of the Si-C(60) interaction was also discussed in terms of Mulliken overlap population between them.     

Band gap of carbon-sulfur [N]helicenes

Asymmetric synthesis of (-)-[9]helicene, as well as preparation of its lower homologues, completes the series of carbon-sulfur [5]-, [7]-, [9]-, and [11]helicenes. Spectroscopic and electrochemical studies of this series provide an absorption onset-based band gap, E(g) = 3.40 eV, for a cross-conjugated (C(2)S)(n) helix; this value may be compared to E(g) = 3.59 eV obtained from TD-DFT computed excitation energies for a series of dimethyl-substituted [n]helicenes (n ≤ 31).     

Si(CH3)3Cl分子电离电势和化学键能的测定

The photoionization spectroscopy of Si(CH3)3Cl in the range of 50 -130 nm was studied with synchrotron radiation source. The adiabatic ionization potentials of molecule Si(CH3)3Cl and radical Si(CH3)3 are 10.06 ±0.02 eV and 7.00±0.03 eV respectively. In addition, the appearance potentials of Si(CH3)2Cl+, Si(CH3)3+, SiCl+ and SiCH3+ were determined:
AP(Si(CH3)2Cl+) ＝10.49±0.02eV, AP(Si(CH3)3+) ＝ 11.91 ±0.02eV
AP(SiCl+) ＝ 18.64 ±0.06eV, AP(SiCH3+)＝ 18.62 ±0.02eV
From these, some chemical bond energies of Si(CH3)3Cl+ were calculated:
D(Si(CH3)2Cl+ - CH3) ＝0.43 ±0.02eV, D(Si(CH3)3+ - Cl) ＝ 1.85 ± 0.02eV
D(SiCH3+ - (2CH3 ＋ Cl)) ＝ 8.56 ± 0．06eV, D(SiCH3+ - 2CH3) ＝6.71±0．06eV
D(SiCl+ - 3CH3) ＝ 8.58 ± 0.06eV, D(SiCl＋- 2CH3) ＝ 8.15 ±0.06eV
D(SiCH3+- (CH3 ＋ Cl)) ＝8.13 ±0.06eV