Si(CH3)2Cl2分子的电离电势和化学键能的测定

有机硅化合物是半导体工业中产生硅元件的基本原料和有机合成中的重要试剂，是多年来大家研究较多的分子体系之一．本文报导了用同步辐射加速器产生的真空紫外光，电离St（CH3hCI。分子．在50－120n－m波长范围内，测量了各种离子产物与真空紫外光波长的关系，推算得它的绝热电离电势和离子中几个化学键的键能．1实验装置和方法本工作在国家同步辐射实验室光化学实验站进行．进行分子真空紫外光电离研究的实验系统已在文献山中详细描述．同步辐射加速器产生的真空紫外光波长用Ne气的电离势标定，其误差＜士0－Inln．单色仪的分辨率为河凸…     

C2H3Cl分子近阈值处真空紫外光离子谱研究

The photoionization efficiency curve (PIE) of C2H3Cl+ formation from C2H3Cl has been measured in wavelength region 105.0- 130.0nm, by using synchrotron radiation single- photon ionization and a quadrupole mass spectromemter as a detector. A series of peaks in region 106.0-117.0nm arise from Rydberg autoionization converging to A2A' state of the vinyl chloride ion, the average quantum defects are δ(ns) = 1.87, δ(np) = 1.51,δ(nd) = 0.22 respectively. The Rydberg transitions of π(2a") → 4d, π(2a") →5d, π(2a")→6s, π(2a") →7s have been assigned also.     

基体辅助激光解吸电解飞行时间质谱用于有参皂甙Rg3的定量分析

考察了基体辅助激光解吸时间飞行质谱用于人参皂甙Rg3定量分析时内标的选择,加入棉子糖作为内标时,Rg3的定量标准曲线的回归系数R^2=0.938,平均相对误差为28.6%,加入性质相近的芦丁后,Rg3的定量标准曲线的回归系数R^2=0.933,平均相对误差为7.5%,分辨率的提高以及采用Rg3和内标物的质谱峰的相对面积来人表Rg3的浓度可以使定量的重现笥明显改善.     

3-羟基-4-甲氧基肉桂酸--基体辅助激光解吸电离质谱法测定DNA的有效基体

报道用基体辅助激光解吸电离质谱法（ ＭＡＬＤＩ－ ＭＳ） 测定ＤＮＡ 分子的一种有效基体３－ 羟基－ ４ － 甲氧基肉桂酸。 实验发现该基体对ＤＮＡ 分子解吸和电离效率高, 对ＤＮＡｄ（ Ｔ） １０ 分子离子峰的分辨率为５ ５５１ ．４ , 信噪比为１１ ．８ 。３ － 羟基－ ４ － 甲氧基肉桂酸是ＭＡＬＤＩ－ ＭＳ 法测定ＤＮＡ 分子的一个可供选择使用有效基体。     

基体辅助激光解吸电离飞行时间质谱用于人参皂甙Rg3的定量分析

考察了基体辅助激光解吸电离时间飞行质谱用于人参皂甙Rg3 定量分析时内标的选择。加入棉子糖作为内标时 ,Rg3 的定量标准曲线的回归系数R2 =0 .938,平均相对误差为 2 8 6 % ;加入性质相近的芦丁后 ,Rg3 的定量标准曲线的回归系数R2 =0 993,平均相对误差为 7 5 %。分辨率的提高以及采用Rg3 和内标物的质谱峰的相对面积来代表Rg3 的浓度可以使定量的重现性明显改善     

复合物邻二甲苯… NH_3(ND_3)分子间的振动

范德华（ vdW）振动频率基本上小于 100 cm－ 1.在三种同分异构的甲基苯中 ,间位的双甲基苯较为适合于研究 vdW振动 ,因为间位双甲基苯的两个甲基之间作用相当强 ,在分子振动基态到＋ 100 cm－ 1范围 ,不存在甲基内转动跃迁 [1].我们曾报导了复合物 o- xylene… Ar、 o- xylene… N2的电子态 S1← S0跃迁的 vdW振动分辨谱 [2,3],获得了这两种复合物的键弯曲和键伸缩振动的频率 .o- xylene… Ar和 o- xylene… N2都属 Cs点群 ,它们沿对称面内（ x轴方向）的弯曲振动频率分别为 13.9 cm－ 1和 23.7 cm－ 1,沿垂直于环面（ z轴方向）的伸…     

复合物邻二甲苯…NH3(ND3)分子间的振动

Resonant two photon ionization spectra of S1←S0 transition in complex o xylene…NH3(ND3) in supersonic molecular beam are observed using resonant two photon ionization,together with time of flight mass spectrometry. The spectra exhibit rich information on the complex intermolecular vdW vibrational modes.We have tentatively assigned all the observed spectral features.By analyzing the spectra,the stretching vibrational frequencies and two bending vibrational frequencies of the the complex are obtained.The structure of the complex has been obtained by ab initio computation method.     

C6F5X＋（X=Cl,Br,I,CH3）离子的理论研究

用DFT B3LYP方法及6-311G（d,p）,6-311＋G（d,p）和LanL2dz基组,对C6F5X＋（X=Cl,Br,I,CH3）阳离子做了理论研究,优化了它们的电子基态的构型,计算了对应分子的垂直电离势（VIP）和绝热电离势（AIP）.结果表明四种离子的构型的对称点群和对应分子相同,但构型参数有明显差别.B...     

NaTaO_3及NaTaO_3∶Bi~(3+)光催化剂的光致发光光谱研究

采用光致发光光谱技术对一系列不同条件下制备的NaTaO3及不同掺杂量的NaTaO3∶Bi3 进行了研究.结果表明,NaTaO3的发光性质与其制备条件密切相关在钠离子不足的条件下合成的样品,其发光带主要位于515和745nm左右;而在钠离子充足条件下合成的样品,其发光带位于460nm左右,随着n(Na)/n(Ta)的降低,发光带向长波长方向移动;掺入Bi3 之后,其发光峰由515nm移至455nm,随着Bi3 掺入量的增加,455nm的发光带强度减弱.515nm的发光带与替位缺陷Ta.N.a..相关;745nm的发光带与VN`a缺陷相关;而460nm的发光带与本征TaO6基团相关.将Bi3 掺入到钽酸钠样品,TaN..a..由BiN..a替代,相应的发光带向高的n(Na)/n(Ta)方向移动,从而呈现出本征TaO6基团的发光带.     

Synthesis and Crystal Structure of （SiCl3）2Fe（CO）4

The compound （SiCl3）2Fe（CO）4 was synthesized and structurally characterized by X-ray single-crystal diffraction. It crystallizes in monoclinic, space group P2 1/n with α = 8.287（2）, b = 9.829（2）, c = 9.042（2） A, β = 96.19（3）°, V= 732.2（3） A^3, C4Cl6FeO4Si2, Mr = 436.77, Z = 2, Dc = 1.981 g/cm^3, F（000） = 424, μ（MoKα） = 2.282 mm^-1, the final R = 0.048 and wR = 0.164 for 1109 observed reflections （I 〉 2σ（I））. The crystal structure of （SiCl3）2Fe（CO）4 reveals that the Si（l）- Fe-Si（l）^a sequence is linear and perpendicular to the Fe（CO）4 cross-shaped plane.     

Unexpected Disproportionation of Tetramethylethylenediamine-Supported Perchlorodisilane Cl(3)SiSiCl(3)

The addition compound Cl(3)SiSiCl(3)·TMEDA was formed quantitatively by treatment of Cl(3)SiSiCl(3) with tetramethylethylenediamine (TMEDA) in pentane at room temperature. The crystal structure of Cl(3)SiSiCl(3)·TMEDA displays one tetrahedrally and one octahedrally bonded Si atom (monoclinic, P2(1)/n). (29)Si CP/MAS NMR spectroscopy confirms this structure. Density functional theory (DFT) calculations have shown that the structure of the meridional isomer of Cl(3)SiSiCl(3)·TMEDA is 6.3 kcal lower in energy than that of facial coordinate species. Dissolving of Cl(3)SiSiCl(3)·TMEDA in CH(2)Cl(2) resulted in an immediate reaction by which oligochlorosilanes Si(n)Cl(2n) (n = 4, 6, 8, 10; precipitate) and the Cl(-)-complexed dianions [Si(n)Cl(2n+2)](2-) (n = 6, 8, 10, 12; CH(2)Cl(2) extract) were formed. The constitutions of these compounds were confirmed by MALDI mass spectrometry. Additionally, single crystals of [Me(3)NCH(2)CH(2)NMe(2)](2)[Si(6)Cl(14)] and [Me(3)NCH(2)CH(2)NMe(2)](2)[Si(8)Cl(18)] were obtained from the CH(2)Cl(2) extract. We found that Cl(3)SiSiCl(3)·TMEDA reacts with MeCl, forming MeSiCl(3) and the products that had been formed in the reaction of Cl(3)SiSiCl(3)·TMEDA with CH(2)Cl(2). X-ray structure analysis indicates that the structures of [Me(3)NCH(2)CH(2)NMe(2)](2)[Si(6)Cl(14)] (monoclinic, P2(1)/n) and [Me(3)NCH(2)CH(2)NMe(2)](2)[Si(8)Cl(18)] (monoclinic, P2(1)/n) contain dianions adopting an "inverse sandwich" structure with inverse polarity and [Me(3)NCH(2)CH(2)NMe(2)](+) as countercations. Single crystals of SiCl(4)·TMEDA (monoclinic, Cc) could be isolated by thermolysis reaction of Cl(3)SiSiCl(3)·TMEDA (50 °C) in tetrahydrofuran (THF).     

Low-energy electron stimulated desorption of neutrals from multilayers of SiCl4 on Si(111)

The interaction of low-energy electrons with multilayers of SiCl(4) adsorbed on Si(111) leads to production and desorption of Cl((2)P(32)), Cl((2)P(12)), Si, and SiCl. Resonant structure in the yield versus incident electron energy (E(i)) between 6 and 12 eV was seen in all neutral channels and assigned to dissociative electron attachment (DEA), unimolecular decay of excited products produced via autodetachment and direct dissociation. These processes yield Cl((2)P(32)) and Cl((2)P(12)) with nonthermal kinetic energies of 425 and 608 meV, respectively. The Cl((2)P(12)) is produced solely at the vacuum surface interface, whereas the formation of Cl((2)P(32)) likely involves subsurface dissociation, off-normal trajectories, and collisions with neighbors. Structure in the Cl((2)P(32)) yield near 14 and 25 eV can originate from excitation of electrons in the 2e, 7t(2) and 6t(2), 6a(1) levels, respectively. Although the 14 eV feature was not present in the Cl((2)P(12)) yield, the broad 25 eV feature, which involves complex Auger filling of holes in the 6t(2) and 6a(1) levels of SiCl(4), is observed. Direct ionization, exciton decay, and DEA from secondary electron scattering all occur at E(i)>14 eV. Si and SiCl were detected via nonresonant ionization of SiCl(x) precursors that are produced via the same states and mechanisms that yield Cl. The Si retains the kinetic energy profile of the desorbed precursors.     

Si(CH3)3Cl修饰的HZSM-5酸性及正己烷芳构化的催化性能研究

随着芳烃需求量的增加,低分子烃的芳构化受到广泛重视.由于HZSM-5的独特骨架结构及酸性,使其对低分子烃有良好芳构化性能~[1～3],但研究工作大多放在HZSM-5本身的硅铝比调变及加入某些金属(如Ga,Zn)来提高其芳构化性能~[4～7],而以非金属对其进行改性处理则很少见.本文以Si(CH_3)_3CI对HZSM-5进行CVD处理,并对其酸性及对正已烷芳构化能力进行了考察,研究了催化剂的结焦情况.     

Syntheses and Characterizations of （CH3CH2CH2CH2NH3）6（BiI6）（I）2I3 and （NH3CH2CH2NH3）2Bi2I10

The title compounds have been respectively synthesized by solution process and solvothermal reaction, and their crystal structures were determined by X-ray diffraction method. For （CH3CH2CH2CH2NH3）6（BiI6）（I）2I3 1, it crystallizes in tficlinic, space group P1^- with Mr = 2049.76, a = 8.5719（1）, b = 11.7461（3）, c = 15.700（1）A, V = 1451.4（1）A^3, Z = 1, Dc = 2.345 g/cm^3, F（000） = 924, μ（MoKα） = 8.907 mm^-1, T = 293（2） K, the final R = 0.0655 and wR = 0.0804 for 2399 observed reflections with I 〉 2σ（I）. For （NH3CH2CH2NH3）2Bi2I10 2, it crystallizes in monoclinic, space group P21/n with Mr= 1811.20, a = 8.434（4）, b = 13.862（6）, c = 13.362（6）A, V = 1499.9（12）A^3, Z = 2, Dc = 4.010 g/cm^3, F（000） = 1536,μ（MoKα） = 22.007 mm^-1, T = 293（2） K, the final R = 0.0584 and wR = 0.1451 for 1798 observed reflections with I 〉 2σ（I）. The structures of 1 and 2 contain halobismuthate monomer and dimers, respectively. It is noteworthy that the dimers and their organic counters in 2 connect each other by N…I hydrogen bonds to form a layered structure, and the electrostatic interactions and crystal packing forces between layers give rise to the packing of the crystal. The optical absorption spectra of 1 and 2 reveal the appearance of sharp optical gaps of 2.13 and 2.01 eV, respectively.     

Synthesis and Crystallographic Characterization of Complex [(CH_3)_3NCH_2CH_2N(CH_3)_3][HgI_4]·H_2O Containing Novel Cation

1 INTRODUCTION The crystal structures of several tetrahalogeno-mercurates (II) have been reported with a wide va-riety of stereochemical arrangements[1, . These stu- 2]dies have shown that the Hg atom…     

Gas-phase SN2 and bromine abstraction reactions of chloride ion with bromomethane: reaction cross sections and energy disposal into products

Reaction cross sections and product velocity distributions are presented for the bimolecular gas-phase nucleophilic substitution (S(N)2) reaction Cl(-) + CH(3)Br --> CH(3)Cl + Br(-) as a function of collision energy, 0.06-24 eV. The exothermic S(N)2 reaction is inefficient compared with phase space theory (PST) and ion-dipole capture models. At the lowest energies, the S(N)2 reaction exhibits the largest cross sections and symmetrical forward/backward scattering of the CH(3)Cl + Br(-) products. The velocity distributions of the CH(3)Cl + Br(-) products are in agreement with an isotropic PST distribution, consistent with a complex-mediated reaction and a statistical internal energy distribution of the products. Above 0.2 eV, the velocity distributions become nonisotropic and nonstatistical, exhibiting CH(3)Cl forward scattering between 0.2 and 0.6 eV. A rebound mechanism with backward scattering above 0.6 eV is accompanied by a new rising feature in the CH(3)Cl + Br(-) cross sections. The competitive endothermic reaction Cl(-) + CH(3)Br --> CH(3) + ClBr(-) rises from its thermochemical threshold at 1.9 +/- 0.4 eV, showing nearly symmetrically scattered products just above threshold and strong backward scattering above 3 eV associated with a second feature in the cross section.     

Strong intramolecular Si-N interactions in the chlorosilanes Cl3-nHnSiOCH2CH2NMe2 (n = 1-3)

The compounds Cl 3SiOCH 2CH 2NMe 2 ( 1) and Cl 2HSiOCH 2CH 2NMe 2 ( 2) were prepared by reactions of lithium 2-(dimethylamino)ethanolate with SiCl 4 and HSiCl 3. The analogous reaction with H 2SiCl 2 gave ClH 2SiOCH 2CH 2NMe 2 ( 3), but only in a mixture with Cl 2HSiOCH 2CH 2NMe 2 ( 2), from which it could not be separated. All compounds were characterized by IR and NMR ( (1)H, (13)C, (29)Si) spectroscopy, 1 and 2 by elemental analyses and by determination of their crystal structures. Cl 3SiOCH 2CH 2NMe 2 ( 1) and Cl 2HSiOCH 2CH 2NMe 2 ( 2) crystallize as monomeric ring compounds with pentacoordinate silicon atoms participating in intramolecular Si-N bonds [2.060(2) A ( 1), 2.037(2) A ( 2)]. The dative bonds in 1 and 2 between the silicon and nitrogen atoms could also be proven to exist at low temperatures in solution in (1)H, (29)Si-HMBC-NMR experiments by detection of the scalar coupling between the (29)Si and the protons of the NCH 2 and NCH 3 groups. A function describing the chemical shift delta exp (29)Si dependent on the chemical shifts of the individual equilibrium components, the temperature, and the free enthalpy of reaction was worked out and fitted to the experimental VT-NMR data of 1 and 2. This provided values of the free reaction enthalpies of Delta G = -28.8 +/- 3.9 kJ x mol (-1) for 1 and Delta G = -22.3 +/- 0.4 kJ x mol (-1) for 2 and estimates for the chemical shifts of open-chain (index o) and ring conformers (index r) for 1 of delta r = -94 +/- 2 ppm and delta o = -36 +/- 5 ppm and for 2 of delta r = -82 +/- 1 ppm and delta o = -33 +/- 4 ppm. The value of delta r for 1 is very close to that obtained from a solid-state (29)Si MAS NMR spectrum. Quantumchemical calculations (up to MP2/TZVPP) gave largely differing geometries for 1 (with a Si...N distance of 3.072 A), but well reproduced the geometry of 2. These differences are due to Cl...H and Cl...C repulsions and solid state effects, which can be modeled by conductor-like screening model calculations and also rationalized in terms of the topology of the electron density, which was analyzed in terms of the quantum theory of atoms in molecules.     

High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces

High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si(+), Si(2+), Si(3+), and Si(4+) were detected on the Cl-terminated surface, with the highest oxidation state (Si(4+)) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p(3/2) peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monoleyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH(3)-, C(2)H(5)-, or C(6)H(5)CH(2)-terminated Si surfaces displayed <0.4 ML of surface oxide, and in most cases only displayed approximately 0.20 ML of oxide. This oxide was principally composed of Si(+) and Si(3+) species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p(3/2) peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7 degrees vs < or =0.5 degrees off of the (111) surface orientation) yielded no increase in the rate of oxidation nor change in binding energy of the resultant oxide that formed on the alkylated Si surfaces. Scanning Auger microscopy indicated that the alkylated surfaces formed oxide in isolated, inhomogeneous patches on the surface.