单根锑掺杂ZnO微米线热电发电机的制备及热电性能

采用化学气相沉积（CVD）方法,在无催化剂的条件下,生长出了锑掺杂的超长、大尺寸ZnO微米线。测试表明微米线的平均长度可达1~2.5 cm,微米线中锑元素的百分含量约为3.1%（n/n）。此外,将挑选出的单根锑掺杂ZnO微米线以银浆为电极制作成热电发电机,并研究了微米线长度和微米线直径对器件输出性能的影响。研究表明当器件两电极之间的温差为20 K且两电极间微米线的长度为1.6 cm时,器件能够输出的最大电压和最大输出功率分别约为36 mV和10.8 nW,微米线的赛贝克系数约为-1.80 mV·K^-1。此外,热电器件的输出电压随着微米线长度的增加而增大,随微米线直径的增加而减小。     

砷掺杂的ZnO纳米线的发光特性

在GaAs基底上制备了高质量的直径为10～100 nm、长度约几个微米的As掺杂ZnO纳米线. 扫描电镜、EDX分析及透射电镜分析显示, ZnO纳米线具有较好的晶态结构. 对As掺杂前后的ZnO纳米线进行光学特性测量, 结果表明, ZnO纳米线在385 nm处有较强的紫外发光峰, 在505 nm左右有较弱的蓝绿发光峰; As掺杂较大地改变了ZnO纳米线的发光性质, 使本征发光峰移到393 nm处, 蓝绿发光强度有了很大程度的提高.     

微纳米结构复合表面的疏水-冰性能

通过软复型和水热法制备出一种由有机材料和ZnO纳米棒组成的微纳米结构复合表面,这种表面的微米结构是周期为300μm、高度为70μm的锯齿状结构,ZnO纳米线的直径为300~500 nm,长度为2~3μm.这种有机材料和ZnO纳米线复合成的表面经过全氟硅烷修饰后,具有良好的低黏滞特性和低温超疏水性(约为150°)以及较长的结冰延时性(6000~7630 s),实验结果对设计表面低温疏水/疏冰材料具有参考价值.     

高度取向ZnO单晶亚微米棒阵列的制备与表征

通过低温压热的方法,在经过预先处理长满晶核的SnO2导电玻璃基底上制备出具有高度取向的ZnO亚微米棒阵列.用扫描电子显微镜(SEM)、选区电子衍射(SAED)及X射线粉末衍射(XRD),对制备出的ZnO亚微米棒的结构和形貌进行了表征.SEM测试结果表明,ZnO亚微米棒是六方型的,近乎垂直地长在基底上,棒的直径为400～500 nm,长度约为2 μm. SAED和XRD结果表明,ZnO亚微米棒为单晶,属于六方晶系,并且沿[001]方向择优取向生长.     

微流控芯片上高电导率介质中聚苯乙烯微球的动电分离

采用三层夹心式、三平行微电极设计制作了聚二甲基硅氧烷(Polydimethylsiloxane,PDMS)/玻璃微流控芯片,通过交流电对在微流控芯片中的高电导率溶液施加电场,达到不同尺寸聚苯乙烯(Polystyrene,PS)微球分离的目的;探讨了微球定向运动的动电学原理。结果表明,在电压为14 V,频率为100 k Hz时,直径为10和25μm的PS微球分离效率最好;在电压为10 V,频率为2 MHz时,直径为5和25μm的PS微球分离效率最好;对于直径分别为5、10和25μm的3种PS微球分离,在电压为11 V,频率为1 MHz时,可以达到大球和另外两种尺寸较小微球的快速有效分离,分离效率均可达90%以上。结果表明,相邻电极中间位置层流区域的形成,对微球分离起到关键作用。     

隔膜和熔融碳酸盐燃料电池 (MCFCS)性能的研究(英文)

用γ LiAO2 粉料和带铸法制备电池隔膜。隔膜有很高的阻窜能力和较低的欧姆极化。在电流密度为 2 0 0和 2 4 6mA/cm2 下放电时 ,用此膜组装的电池组 (三对电池 ,电极面积为 12 2cm2 )输出电压分别为 2 .0 1和 1.78V ,输出功率达 53.4W .于 2 0 0和 30 0mA/cm2 下放电时 ,单电池 (电极面积为 2 8cm2 )输出电压分别高于 0 .85和 0 .75V ,输出功率约 6 .6W .补偿隔膜收缩导致电池性能的提高 .     

加热覆盖有ZnCl2溶液的锌片制备ZnO亚微米棒阵列

将表面覆盖有ZnCl2溶液的锌片加热到400 ℃反应1 h, 在锌片上生长出了ZnO亚微米棒阵列. 采用扫描电镜、透射电子显微镜和X射线衍射仪对所制备的产物进行了表征和分析. 结果表明产物为六方相纤锌矿单晶结构的ZnO亚微米棒, 其直径和长度分别为300～650 nm和6 μm, 提出了ZnO亚微米棒可能的生长机理. 在波长为300 nm光的激发下, 发现了ZnO亚微米棒阵列具有发光峰位于395 nm强的紫外光发光和位于490 nm弱的蓝绿光发光, 这两种发光分别起源于ZnO宽带隙带边发射和ZnO中相应的缺陷结构.     

光照强度和掺杂浓度对n-PS形貌和电化学行为影响

测试分析了光照强度和掺杂浓度对n型硅电极电化学特性的影响。采用电化学阳极腐蚀法在光照辅助下制备多孔硅(PS),通过扫描电镜研究掺杂浓度对PS表面微观形貌的影响,通过积分球测试仪测试研究了PS对光的反射率。结果表明,对于n型硅,光照是激发空穴的必要手段,光照强度越强,硅/电解液界面的电荷转移阻抗越小,更利于反应的进行;掺杂浓度越高,电化学极化阻力越小,促进PS孔密度增加。本实验条件下,形成的PS是微米级孔,随着掺杂浓度的增加,形成的PS孔径越小,孔深存在一个极值;电阻率为0.35Ω·cm的硅片拥有最大的孔深13μm;PS的孔结构大大提升了硅基对光子的捕获能力,相比于单晶硅,在可见-近红外范围,电阻率为0.0047Ω·cm的硅片制备的n-PS对光的反射率已经从30%降低到了5%。     

Co掺杂ZnO纳米棒的水热法制备及其光致发光性能

以Zn(NO3)2·6H2O 和Co(NO3)2·6H2O为原料, 通过水热法在较低温度下制备了纯ZnO和Co掺杂的ZnO(ZnO:Co)纳米棒. 利用XRD、EDS、TEM和HRTEM对样品进行了表征, 结合光致发光(PL)谱研究了样品的PL性能. 结果表明, 水热法制备纯ZnO和ZnO:Co纳米棒均具有较好的结晶度. Co2+是以替代的形式进入ZnO晶格, 掺入量为2%(原子分数)左右. 纯的ZnO纳米棒平均直径约为20 nm, 平均长度约为180 nm; 掺杂样品的平均直径值约为15 nm, 平均长度约为200 nm左右; Co掺杂轻微地影响ZnO纳米棒的生长. 另外, Co掺杂能够调整ZnO纳米棒的能带结构、提高表面态含量, 进而使得ZnO:Co纳米棒的紫外发光峰位红移, 可见光发光能力增强.     

光照强度和掺杂浓度对多孔硅形貌和电化学行为的影响

测试分析了光照强度和掺杂浓度对n型硅电极电化学特性的影响。采用电化学阳极腐蚀法在光照辅助下制备多孔硅(PS),通过扫描电镜研究掺杂浓度对PS表面微观形貌的影响,通过积分球测试仪测试研究了PS对光的反射率。结果表明,对于n型硅,光照是激发空穴的必要手段,光照强度越强,硅/电解液界面的电荷转移阻抗越小,更利于反应的进行;掺杂浓度越高,电化学极化阻力越小,促进PS孔密度增加。本实验条件下,形成的PS是微米级孔,随着掺杂浓度的增加,形成的PS孔径越小,孔深存在一个极值;电阻率为0.35Ω·cm的硅片拥有最大的孔深13μm;PS的孔结构大大提升了硅基对光子的捕获能力,相比于单晶硅,在可见-近红外范围,电阻率为0.0047Ω·cm的硅片制备的n-PS对光的反射率已经从30%降低到了5%。     

Sb掺杂大尺寸ZnO纳米棒的制备及其特性研究

采用化学气相沉积法,在没有采用任何催化剂的条件下,在Si(100)衬底上成功制备出Sb掺杂大尺寸ZnO纳米棒,并对样品进行了结构和光学性质的表征。结果表明:纳米棒为结晶质量较好的六角纤锌矿结构,在能量色散谱(EDS)中观测到了Sb元素的存在。此外,在低温光致发光(PL)光谱中还观测到了与Sb掺杂相关的中性受主束缚激子发光峰(A0X)、自由电子到受主能级跃迁的发光峰(FA)、施主受主对(DAP)以及DAP的一级纵向光声子伴线(DAP-1LO),因此证实Sb元素作为受主杂质掺杂已进入ZnO晶格。     

Influence of Ga dopant on photoelectrochemical characteristic of Ga‐doped ZnO thin films deposited by sol–gel spin‐coating technique

In this study, Ga‐doped ZnO thin films were prepared using sol–gel technique via spin‐coating method. The effect of Ga‐doping dopant (0, 1, 2 and 3 at.%) on microstructural, optical, electrical and photoelectrochemical (PEC) characteristics have been investigated. The spin‐coating was repeated six times, and as‐obtained thin films were then annealed at 500 °C for 1 h in vacuum. After annealing, all samples revealed single phase of hexagonal ZnO polycrystalline structure with a main peak of (002) in X‐ray diffraction (XRD) pattern. Raman spectra show that the vibration strength of E₂ is highly decreased by Ga doping. Thicknesses of all samples were ~300 nm measured via scanning electron microscopy (SEM) cross‐section images and alpha‐step. The optical band gap and resistivity of samples were in the range of 3.24 to 3.28 eV and 102 to 9 Ohm cm, respectively. Resulting from PEC response, the 2 at.% Ga‐doped ZnO thin film has a better PEC performance with photocurrent density of ~0.14 mA/cm² at 0.5 V versus saturated calomel electrode (SCE) under illumination with the intensity of 100 mW/cm². This value was about seven times higher than the un‐doped film (reference sample). Observed higher photocurrent density was likely because of a suitable Ga‐doping concentration causing a lower resistivity. Copyright © 2016 John Wiley & Sons, Ltd.     

NaCdSb: An Orthorhombic Zintl Phase with Exceptional Intrinsic Thermoelectric Performance

Many Zintl phases are promising thermoelectric materials owning to their features like narrow band gaps, multiband behaviors, ideal charge transport tunnels, and loosely bound cations. Herein we show a new Zintl phase NaCdSb with exceptional intrinsic thermoelectric performance. Pristine NaCdSb exhibits semiconductor behaviors with an experimental hole concentration of 2.9×10¹⁸ cm⁻³ and a calculated band gap of 0.5 eV. As the temperature increases, the hole concentration rises gradually and approaches its optimal one, leading to a high power factor of 11.56 μW cm⁻¹ K⁻² at 673 K. The ultralow thermal conductivity is derived from the small phonon group velocity and short phonon lifetime, ascribed to the structural anharmonicity of Cd−Sb bonds. As a consequence, a maximum zT of 1.3 at 673 K has been achieved without any doping optimization or structural modification, demonstrating that NaCdSb is a remarkable thermoelectric compound with great potential for performance improvement.     

High performance thermoelectrics from earth-abundant materials: enhanced figure of merit in PbS by second phase nanostructures

Lead sulfide, a compound consisting of elements with high natural abundance, can be converted into an excellent thermoelectric material. We report extensive doping studies, which show that the power factor maximum for pure n-type PbS can be raised substantially to ~12 μW cm(-1) K(-2) at >723 K using 1.0 mol % PbCl(2) as the electron donor dopant. We also report that the lattice thermal conductivity of PbS can be greatly reduced by adding selected metal sulfide phases. The thermal conductivity at 723 K can be reduced by ~50%, 52%, 30%, and 42% through introduction of up to 5.0 mol % Bi(2)S(3), Sb(2)S(3), SrS, and CaS, respectively. These phases form as nanoscale precipitates in the PbS matrix, as confirmed by transmission electron microscopy (TEM), and the experimental results show that they cause huge phonon scattering. As a consequence of this nanostructuring, ZT values as high as 0.8 and 0.78 at 723 K can be obtained for nominal bulk PbS material. When processed with spark plasma sintering, PbS samples with 1.0 mol % Bi(2)S(3) dispersion phase and doped with 1.0 mol % PbCl(2) show even lower levels of lattice thermal conductivity and further enhanced ZT values of 1.1 at 923 K. The promising thermoelectric properties promote PbS as a robust alternative to PbTe and other thermoelectric materials.     

Fabrication of gold microtubes and microwires in high aspect ratio capillary arrays

In this communication, we describe the sequential deposition of materials in capillaries as a means to produce self-assembled three-dimensional gold microtubes, hollow gold microwires, and microtube and microwire arrays with unprecedented aspect ratios. The initial application of this technique is the fabrication of an array of microwires within a silica capillary array. The physical characteristics of these microwires are characterized via SEM, electrochemistry, and electrogenerated chemiluminescence emission.     

Electrodeposition of Ni and Te‐doped Cobalt Triantimonide in Citrate Solutions

Skutterudite compounds form a new class of potential candidates for thermoelectric applications. Cobalt triantimonide (CoSb₃) shows good thermoelectric properties at medium and high temperatures. Doping this system with substitution elements, for either Co or Sb or both, may result in an increase of the thermoelectric figure of merit (ZT). This work focused on the electrochemical doping and characterization of films and nanowires of Co‐Sb system in citrate solutions using gold‐coated PCTE templates. The electrodeposition was performed on gold surface that was pre‐treated electrochemically to ensure reproducible results. The electrochemical treatment acted as an annealing process for the surface, which resulted in an increase in Au(111) as demonstrated by XRD. Detailed electrochemical studies including deposition‐stripping experiments was performed in order to develop a better understanding of the co‐deposition kinetics and a better control over the composition of doped Co‐Sb system. Scanning electron microscopy (SEM/EDS) helped study the morphology and the composition of the doped and undoped Co‐Sb system. Co‐deposition of Co‐Sb showed that the amount of Co is higher in nanowires than in film or mushroom caps due to the slow Sb deposition rate dictated by slow Sb(III) complex diffusion. Doped nanowires have been also obtained. Both Ni and Te electrochemical doping of the Co‐Sb system affected the composition of the deposit but there was no effect on nanowire morphology.     

Synthesis of europium-doped zinc oxide micro- and nanowires

Single crystalline Eu³⁺-doped wurtzite ZnO micro- and nanowires were synthesized by a chemical vapor deposition method (CVD). The nanostructures were grown by autocatalytic mechanism at walls of an alumina boat. The structure and properties of the doped ZnO is fully characterized by X-ray diffraction (XRD), energy-dispersive X-ray spectrometry (EDX), scanning and transmission electron microscopy (SEM and TEM), and photoluminescence (PL) methods. The synthesis was carried out for 10 min giving vertically aligned nanowires with mean diameter of 50–400 nm and with length of up to several microns. The nanowires were grown along ±[0001] direction. The concentration of Eu³⁺ dopant in the synthesized nanowires was varied from 0.7 to 0.9 at %. The crystal structure and microstructures of the doped nanomaterials were discussed and compared with undoped ZnO. The photoluminescence spectra show that emission of doped samples were shifted towards orange-red region (2.02 eV) relative to undoped zinc oxide nanostructures (2.37 eV) due to Eu³⁺ intraionic transitions from ZnO/Eu.     

Enhanced β‐phase in PVDF polymer nanocomposite and its application for nanogenerator

Harvesting energy from the ambient mechanical energy by using flexible piezoelectric nanogenerator is a revolutionary step toward achieving reliable and green energy source. Polyvinylidene fluoride (PVDF), a flexible polymer, can be a potential candidate for the nanogenerator if its piezoelectric property can be enhanced. In the present work, we have shown that the polar crystalline β‐phase of PVDF, which is responsible for the piezoelectric property, can be enhanced from 48.2% to 76.1% just by adding ZnO nanorods into the PVDF matrix without any mechanical or electrical treatment. A systematic investigation of PVDF‐ZnO nanocomposite films by using X‐ray diffractometer, Fourier transform infrared spectroscopy, and polarization‐electric field loop measurements supports the enhancement of β‐phase in the flexible nanocomposite polymer films. The piezoelectric constant (d₃₃) of the PVDF‐ZnO (15 wt%) film is found to be maximum of approximately −1.17 pC/N. Nanogenerators have been fabricated by using these nanocomposite films, and the piezoresponse of PVDF is found to enhance after ZnO loading. A maximum open‐circuit voltage ~1.81 V and short‐circuit current of 0.57 μA are obtained for 15 wt% ZnO‐loaded PVDF nanocomposite film. The maximum instantaneous output power density is obtained as 0.21 μW/cm² with the load resistance of 7 MΩ, which makes it feasible for the use of energy harvesting that can be integrated to use for driving small‐scale electronic devices. This enhanced piezoresponse of the PVDF‐ZnO nanocomposite film‐based nanogenerators attributed to the enhancement of electroactive β‐phase and enhanced d₃₃ value in PVDF with the addition of ZnO nanorods.     

Sb掺杂纳米TiO2光催化剂的晶体结构与光催化性能

Nanoscale Sb doped titanium dioxide thin films photocatalyst (Ti1-xSbO2) were obtained from dip-coating sol-gel method. The influence of dopant Sb density on the crystal structure and the phase transformation of the thin films were characterized by X-ray diffraction (XRD) and Raman spectra. The results of XRD showed that as-prepared films were not only in anatase state but also in brookite. The crystalline size was estimated to be around 13.3-20 nm. Raman spectra indicated there coexisted other phases and a transformation from brookite to anatase in the samples doped with 0.2% Sb. After doping a proper amount of Sb, the crystallization rate and the content of the anatase Ti1?xSbO2 in the thin films was clearly enhanced because Sb replaced part of the Ti of TiO2 in the thin films. The anode current density (photocurrent density) and the first order reaction speed constant (k) of thin films doped with 0.2% Sb reached 42.49 1A/cm2 and 0.171 h/cm2 under 254 nm UV illumination, respectively, which is about 11 times and 2 times that of the non-doped TiO2 anode prepared by the same method respectively.