过饱和度对KDP晶体生长与光学性能的影响研究

在不同过饱和度的溶液中生长了KDP晶体,对生长晶体的透过率,光散射和激光损伤阈值进行了表征.研究了不同过饱和度对KDP晶体生长及光学性能的影响.实验表明:KDP晶体可以在高过饱和度(σ＞3;)溶液中实现快速生长,生长速度可大于10 mm/d;但随着溶液过饱和度的增加,KDP晶体生长溶液的稳定性降低,晶体容易出现包藏、开裂和添晶等缺陷,晶体的光学性能也随之降低.     

Fe3+对KDP晶体生长影响的研究

金属离子对KDP晶体的影响是多方面的.本文采用不同的过饱和度,在不同的Fe3+掺杂浓度的生长溶液中生长KDP晶体,定量地研究了Fe3+对KDP晶体生长的影响.实验发现,无论是在高过饱和度还是在低过饱和度下生长KDP晶体,在一定的浓度范围内,Fe3+的掺入既可以增加生长溶液的稳定性,又可以有效抑制晶体柱面的扩展,而且晶体基本不楔化,同时,对晶体光学性能的影响也不大.     

溶液降温法快速生长KDP晶体的新装置

利用溶液降温法分别在锥形底生长装置和传统晶体生长装置中进行了KDP晶体点状籽晶法快速生长实验,对KDP晶体的生长条件进行了对比,分析了不同生长装置对KDP溶液稳定性的影响,利用扫描电镜观察了KDP晶体中的包裹体,测定了晶体的透过率,对比分析了锥形瓶快速生长装置的优越性.     

pH值对KDP晶体位错结构的影响

在一定的过饱和度下,分别用点状和片状籽晶在不同pH值溶液中生长出了KDP晶体.利用化学腐蚀法对KDP晶体的不同晶面进行了腐蚀,得到了清晰的位错蚀坑.应用光学显微镜对位错蚀坑的分布特点和密度做了观察分析,发现很多位错蚀坑成线状排布.pH值对KDP晶体位错密度有较大影响,低pH值条件下生长出的晶体位错密度较大.测试了KDP晶体样本的透过率,结果表明位错密度对KDP晶体的透过率没有明显的影响.     

点状籽晶法生长KDP晶体中散射颗粒分布

在不同的溶液pH值条件下进行了点状籽晶法慢速和快速生长KDP晶体实验,发展了观察晶体中散射颗粒分布的激光层析技术,通过图像处理得到了KDP晶体内部(100)面完整的散射颗粒分部图,对不同生长速度、不同pH值条件下点状籽晶法生长的KDP晶体的散射颗粒分部做了对比.利用表面光学投影技术观察了晶体表面宏观形貌,并由此分析了不同生长条件下生长机制对散射颗粒分布的影响.测定了散射颗粒密度不同部位的晶体透过率.     

pH值对KDP晶体溶解度和溶液稳定性的影响

测定了不同pH值(2.0～5.5)生长溶液中KDP晶体(KH2PO4)的溶解度曲线,实验结果表明:随着生长溶液pH值的改变,KDP溶解度明显增大.讨论了KDP晶体溶液pH值、溶液组成和溶液饱和点温度三者之间的关系.进行了高pH值(3.8～5.6)KDP生长溶液的稳定性实验,发现高pH值生长溶液中的临界成核半径rC增大,溶液的稳定性提高.在不同pH值溶液中进行了晶体生长实验,探讨了不同pH值生长溶液中配合物对KDP晶体生长习性的影响.     

点状籽晶法生长DKDP晶体的研究

本文研究了影响溶液稳定性的因素,主要包括溶液的纯度、饱和点和过饱和度等,并对DKDP的点状籽晶法生长进行了初步研究.同时比较了不同生长速度生长的晶体质量.结果表明:经超细过滤的高纯度溶液稳定性有很大提高,而此时生长速度对晶体质量的影响不大.最后,获得了X、Y向生长速度达3.8mm/d的点状籽晶,生长出尺寸为44mm×44mm×48mm的高质量DKDP晶体,并对晶体生长的表面进行了微观观察,分析了DKDP晶体生长的微观机制.     

快速生长KDP晶体表面的光学显微实时观察

设计了一套溶液降温法晶体生长显微实时观察装置,对快速生长KDP晶体{101}和{100}表面形貌的演化过程进行了实时观测分析.测量了晶体表面生长层切向生长速度随溶液过饱和度的变化曲线,并利用台阶生长动力学方程计算了相关动力学参数.进行了Fe3+掺杂实验,结果表明Fe3+的存在会影响到不同晶面上生长层的动力学系数,从而改变KDP晶体表面生长层的切向生长速度.     

KDP晶体中包裹体形成机制的探讨

本文介绍了包裹体对KDP晶体质量的影响,并从两个方面探讨了KDP晶体生长过程中包裹体的形成机制.通过分析KDP晶体表面原子结构研究了不同杂质的吸附情况以及杂质对生长台阶的阻碍作用,通过分析晶体生长过程中流体动力学和质量输运条件的变化研究了旋转晶体的流体切应力和表面过饱和度,结果表明吸附杂质对生长台阶的阻碍和表面过饱和度的不均匀造成了生长台阶的弯曲和宏观台阶的形成,导致生长台阶形貌的不稳定是包裹体形成的重要原因.     

KDP晶体生长过程中溶液稳定性的研究

在KDP晶体生长过程中,溶液的稳定性对KDP晶体的光学质量影响较大.溶液的稳定性是多种因素共同作用的结果.本文主要研究了过饱和KDP溶液中晶胚的分布情况、降温过程中晶体生长驱动力与降温速度之间的关系,并分析了KDP晶体实际生长过程中影响溶液稳定性的主要因素.我们认为,通过改善KDP晶体生长过程中溶液的稳定性,并与其它措施和技术相结合,是提高KDP晶体光学质量的有效途径.     

CsI-LiCl共晶材料的坩埚下降法生长与闪烁性能研究

本文采用坩埚下降法,在真空密封的石英坩埚中成功生长出CsI-LiCl与CsI-LiCl:Na共晶闪烁体。通过扫描电子显微镜(SEM)观察晶体微结构表明该共晶中LiCl相与CsI相存在周期性的层状排列,CsI相的厚度在5 μm左右。共晶样品的X射线激发发射谱显示在CsI-LiCl和CsI-LiCl:Na共晶样品存在缺陷发光,在CsI-LiCl样品中还观察到了纯CsI的自陷激子(STE)发光。CsI-LiCl样品在α粒子激发下的多道能谱中观察到明显的全能峰,这一结果证明CsI-LiCl共晶可用于热中子探测的潜力。     

静电纺丝法制备CeO2微纳米纤维及其除氟性能

以聚丙烯腈(PAN)为载体,六水合硝酸铈[Ce(NO₃)₃·6H₂O]为原料,采用静电纺丝法制备了Ce(NO₃)₃/PAN纤维,在空气中热处理得到CeO₂微纳米纤维,通过XRD、BET和SEM对CeO₂微纳米纤维进行表征。采用静态吸附实验探讨了CeO₂微纳米纤维去除水溶液中氟离子的性能,考察了溶液pH值、初始氟离子浓度及共存阴离子等对吸附性能的影响。结果表明,pH=3时,CeO₂微纳米纤维对F^-的吸附性能最佳,CeO₂吸附量随着F^-浓度的增大呈上升趋势。CeO₂微纳米纤维对F^-的吸附等温线遵循Langmuir模型,二级动力学模型能很好地描述CeO₂微纳米纤维对F^-的吸附过程。CeO₂微纳米纤维的除氟性能优良,可为其实际应用提供理论参考。     

X-ray analysis of sideroxol from <Emphasis Type="Italic">Sideritis leptoclada</Emphasis>

Sideroxol (1), a kaurane diterpene which has the ent-7α,18-dihydroxy-15β,16β-epoxykaurane structure (MW = 320.47, C₂₀H₃₂O₃) was obtained from the acetone extract of Sideritis leptoclada plant as well as from some other Sideritis species. It crystallizes in the orthorhombic space group P2₁, 2₁, 2₁ with a = 10.967(3), b = 24.555(5), c = 6.372(4) Å, Dc = 1.240 g cm⁻³, Z = 4, and refines to R = 0.065 for 721 independent reflections. The skeleton consists of three fused six-membered rings and a five-membered ring with fused epoxide. The six membered rings exhibited slightly distorted chair conformation. In addition to sideroxol, two kaurane and five kaurene diterpenes were isolated from the hexane and acetone extracts of the studied plant.     

New zeotype borophosphates with chiral tetrahedral topology: (H)0.5M1.25(H2O)1.5[BP2O8]·H2O (M = Co(II) and Mn(II))

Two new isostructural open‐framework zeotype transition metal borophosphate compounds, (H)_0.5M_1.25(H₂O)_1.5[BP₂O₈]·H₂O (M = Co(II) and Mn(II)) were synthesized by mild hydrothermal method. The structure of compounds were characterized by single‐crystal X‐ray diffraction which have ordered, alternating, vertex‐sharing BO₄, PO₄, and (MO₄)OM(H₂O)₂ groups with hexagonal, P 6₁ 2 2 (No 178) space group and unit cell parameters for Co a = 9.4960(6) Å, c = 15.6230(13) Å, for Mn a = 9.6547(12) Å, c = 15.791(3) Å, Z = 1 for both of them. TGA/DTA analysis, IR spectroscopy were used for characterization. Magnetic susceptibility measurements for both of the compound indicate strong antiferromagnetic interaction between metal centers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

We have studied the optical, structural and surface morphology of doped and undoped GaN thin films. The p- and n-type thin films have been successfully prepared by low-pressure MOCVD technique by doping with Mg and Si, respectively. The different carrier concentrations were obtained in the GaN thin films by varying dopant concentrations. Photoluminescence (PL) studies were carried to find the defect levels in the doped and undoped GaN thin films at low temperature. In the undoped GaN thin films, a low intensity and broad yellow band peak was observed. The donor–acceptor pair (DAP) emission and its phonon replicas were observed in both the Si or Mg lightly doped GaN thin films. The dominance of the blue and the yellow emissions increased in the PL spectra, as the carrier concentration was increased. The XRD and SEM analyses were employed to study the structural and surface morphology of the films, respectively. Both the doped and the undoped films exhibited hexagonal structure and polycrystalline nature. Mg-doped GaN thin films showed columnar structure whereas Si-doped films exhibited spherical shape grains.     

Solubility of Ag2O into the Na2O–B2O3–Al2O3 system

The solubility of Ag₂O was measured for the Na₂O–B₂O₃ and Na₂O–B₂O₃–Al₂O₃ system with the rotating crucible method and static method, respectively, under air atmosphere at temperatures ranging from 1273 to 1423 K. The contamination of melts from crucibles could be avoided by the rotating crucible method, with which it became possible to measure the solubility of Ag₂O for the Na₂O–B₂O₃ system above the melting point of Ag for the first time. It was found that the addition of Na₂O decreases the solubility of Ag₂O while the addition of Al₂O₃ had little effect on the solubility. The effect of Na₂O and Al₂O₃ on the solubility of Ag₂O is expressed by interaction coefficients and is analyzed in terms of the basicity of melts. The solubility of Ag₂O in Na₂O–B₂O₃–Al₂O₃ melts increased with increased temperature. This phenomena was explained by a small enthalpy change in oxidation of silver.     

Considerations on the structure and physical properties of B2O3-SiO2 and GeO2-SiO2 glasses

Data of density, refractive index and thermal expansion coefficient for B₂O₃-SiO₂ and GeO_2-SiO₂ glasses have been analyzed. The volumes of the structural units are the same found for the vitreous B₂O₃, GeO₂ and SiO₂. The volume of any structural unit is constant over the entire composition region of the glass system. The same has been found for the differential refraction and unit refraction of the structural units in these glasses. Different features are observed for the differential expansion of the structural units. There is a considerable change with composition in the differential expansion of BO₃, GeO₄ and SiO₄ units. The effect is attributed to a change in the asymmetry of vibrations with the number of Si-O-B or Si-O-Ge linkages in the matrix. The thermal expansion coefficient is mainly determined by the contribution of B₂O₃ or GeO₂ in the concerned glasses.     

Molecular structure and crystal packing of uncomplexed 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C22H18N4O2

The X-ray crystal structure of 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C₂₂H₁₈N₄O₂, is determined. The crystal packing is dominated by phenyl stacking interactions. Weak C–H···N hydrogen bonds help align the molecules. C–H··· hydrogen bonding is not apparent.     

Structural and electrical properties of vapour phase grown Cd1 − xFexTe single crystals

Cd_1 − xFe_xTe single crystals were prepared by vapour phase growth method in the composition range of 0 ≤ x ≤ 0.03. Chemical analysis, surface morphology, structural investigations and electrical properties were carried out by EDAX, SEM, XRD, TEM and transport technique, respectively. Microscopic variations between the target and actual compositions were noticed. Morphology studies revealed that dislocation aided growth is active in the present crystals. TEM and XRD studies confirmed that the samples of all compositions crystallized in zinc blende structure, and the lattice parameters varied almost linearly decreases with Fe content. At room temperature, the resistivity of the Cd_1 − xFe_xTe crystals of all compositions (x = 0.01, 0.015, 0.02, 0.025 and 0.03) lies in the range of 3.5-6.5 M Ω, the activation energies lie in the range of 63-133 meV, and the samples were show the ‘p’ type conductivity.     

空位浓度对纤锌矿CdS电子结构和光学性质影响的第一性原理研究

本文基于密度泛函理论的平面波超软赝势方法,采用第一性原理研究了含Cd空位缺陷CdS和含S空位缺陷纤锌矿CdS的几何结构、能带结构、电子态密度及光学性质。通过计算分析可知,含Cd空位缺陷的CdS体系均为p型半导体,含S空位缺陷的CdS体系跃迁方式均由直接跃迁变为间接跃迁。Cd、S空位缺陷的CdS体系的态密度总能量降低。空位CdS体系相较于本征CdS体系的静介电常数均有提高,并随着空位浓度的增大而增大,Cd空位缺陷体系更为明显,极化能力得到显著提升。空位Cd的CdS体系相较于本征CdS体系在红外波段存在明显的吸收,空位S的CdS体系相较于本征CdS体系在可见光波段存在明显的吸收。