掺半花菁二氧化硅薄膜二阶光学非线性与薄膜结构的动态变化关系

用溶胶－凝胶技术制备的掺入半花菁染料的二氧化硅薄膜在不加电场极化条件下，由半花菁分子的自取向导致光学二次谐波产生，定量测得厚度为５０ｎｍ薄膜的二阶非线性系数ｘ（２）为６．６ｐｍ／Ｖ，着重研究了薄膜稳定前的溶剂挥发过程中，膜结构的变化以及相应二阶光学非线性的变化，在成膜后的四个小时中，质子化半花菁逐步转化为单体和聚集体态，同时，光学二次谐波信号也不断增大，还观察到在这一过程中出现了单体和聚集态半花菁     

不同表压下芪盐单层LB膜二次谐波的研究

在不同表压下制备芪盐的单层LB薄膜,测量LB膜的二次谐波信号.在低表压得到增强的二次谐波信号.对比芪盐的透射光谱,认为在LB膜中,芪盐以固相态存在,低表压时的固相态聚集体的吸收峰351nm使四阶非线性极化率x(4)(-2ω;ω,ω,ω,-ω)产生共振增强,四阶光学非线性现象对二次谐波信号产生影响.     

超高真空中C60光聚合效应光学二次谐波的研究

利用１．０６４μｍ基频超短脉冲激光，使用光学二次谐波方法研究了超高真空中蒸镀在多晶银表面上的Ｃ６０薄膜紫外光照射下的光聚合现象，发现聚合以后的Ｃ６０二阶非线性响应增强，同时观察到光聚合的饱和效应，Ｃ６０光聚合二阶非线性的提高可以用电四极了磁偶极子对二次谐波贡献的增强来解释。     

掺半花菁二氧化硅薄膜光学二次谐波产生

报道了用溶胶 凝胶技术制备掺入半花菁染料的二氧化硅薄膜．在不加电场极化条件下，由半花菁分子的自取向导致光学二次谐波产生，定量测得厚度为50nm薄膜的二阶非线性系数χ^（2）为6.6pm/V，并初步研究了半花菁分子自取向的机理 关键词：     

基于二次谐波产生技术的BaTiO3薄膜对称性研究

光学二次谐波产生技术是研究材料极化特性和对称性的重要工具,利用搭建的显微二次谐波产生光路,对生长在SrTiO_3衬底上的BaTiO_3薄膜样品进行了二次谐波产生测试。结果表明,BaTiO_3薄膜在面内方向具有二重旋转对称性。在四种偏振模式下测量了样品的二次谐波信号,结果表明,随着基频光入射功率的变化,二次谐波强度的图样也发生了变化。当入射光功率为7.5～7.7 mW时,信号发生突变;当入射光功率大于7.5 mW时,水平偏振出射光的二次谐波信号图样主峰减弱,次峰增强。     

双轴晶体中二次谐波产生的最佳相位匹配条件

从二次谐波产生的理论出发，讨论了双轴晶体中二次谐波产生的相位匹配条件，推导了有效非线性光学系数的精确计算公式，以有机非线性光学晶体二苯甲酮为例，给出了对两种基波(1064μm和0808μm)二次谐波产生的相位匹配条件的数值模拟及相应的有效非线性光学系数的精确计算结果，并确定出相应的最佳相位匹配条件. 关键词： 二次谐波产生 最佳相位匹配 有效非线性光学系数 二苯甲酮晶体     

非对称耦合量子阱Zn1-xCdxSe/ZnSe的二次谐波产生及其光学各向异性研究

采用反射式二次谐波产生方法对非对称Ⅱ-Ⅵ族耦合量子阱Zn1-xCdxSe/ZnSe的非线性光学特性进行了研究。与衬底相比,非对称量子阱在可见光波段的二次谐波信号增强一个量级以上。测量和比较了室温下量子阱样品与衬底样品的荧光光谱,研究了在入射光和反射光均为p偏振,以及入射光和反射光分别为s偏振和p偏振两种情况下,二次谐波强度随样品旋转方位角的变化关系,可见其有非常明显的二阶非线性一光学各向异性。     

GaN基薄膜半导体材料不同非线性效应的竞争关系

采用金属有机化合物化学气相沉积方法生长了未掺杂GaN,p型Mg掺杂GaN,InGaN/GaN多量子阱等薄膜半导体材料,研究了其在800 nm飞秒激光激发下的非线性光学性质.实验结果表明,在800 nm飞秒激光激发下,多光子荧光、二次谐波等非线性光学信号之间存在着竞争关系,反映出不同非线性光学信号对激发光的能量分配存在着竞争,并通过其非线性光学信号强度与激发强度之间的依赖关系进行了验证.同时,本文对其竞争机理进行了初步探究.     

面心立方多晶薄膜中应变能密度对晶粒取向的依赖

对附着在基体上面心立方多晶薄膜中不同取向晶粒的应变能密度进行了计算.结果表明:在屈服之前,5个最小的应变能密度对应的晶粒取向依次为(100),(510),(410),(511)和(310);在屈服膜中,5个最小的应变能密度对应的晶粒取向依次为(110),(100),(511),(411)和(211).仅考虑应变能,这些取向的晶粒将依次优先生长 关键词： 薄膜 应变能密度 晶粒生长     

有机/无机薄膜凝胶动态过程的实时光学二次谐波产生研究

采用实时光学二次谐波产生(SHG)测量方法,以两亲性分子半花菁为掺杂探针分子,对溶胶-凝胶技术制备的玻璃薄膜的凝胶干燥的动态过程进行了研究.结合紫外—可见吸收光谱的测量,发现：因两亲性分子在膜中的自取向性可诱导出二阶光学非线性,溶胶-凝胶技术制备的有机/无机复合膜的凝胶干燥过程可通过薄膜SHG强度的变化半定量地反映.凝胶干燥收缩导致有序掺杂分子数减少,膜片的光学非线性减弱.该过程随薄膜处理温度的升高而急剧缩短;另外,有机分子在膜中的聚集程度随膜片处理温度的增加而很快减少. 关键词：     

Theory of enhanced second-harmonic generation in some artificial materials

We review the recent theoretical investigation on enhanced second-harmonic generation (SHG) in soft nonlinear optical materials based on ferrofluids, graded metallic films, and graded metal-dielectric films of anisotropic particles. The SHG of soft ferrofluid-based nonlinear optical materials possess magnetic-field controllabilities, i.e., magnetic-field-controllable anisotropy, red-shift and enhancement, which are caused to appear by the shift of a resonant plasmon frequency due to the formation of the chains of the coated nanoparticles. Both graded metallic films and graded metal-dielectric films of anisotropic particles can serve as a novel optical material for producing a broad structure in both the linear and SHG response and an enhancement in the SHG signal, due to the local field effects.      

1 064 nm激光对氧化铟锡薄膜的损伤研究

 液晶光学器件在激光光束精密控制上具有重要应用前景,氧化铟锡（ITO）薄膜作为液晶光学器件的透明导电电极,是液晶器件激光损伤的薄弱环节。为此,建立了ITO薄膜激光热损伤物理模型。理论计算结果表明：1 064 nm激光对ITO薄膜的损伤主要为热应力损伤;连续激光辐照下,薄膜损伤始于靠近界面的玻璃基底内;脉冲激光辐照下,温升主要发生在光斑范围内的膜层,薄膜损伤从表面开始。利用泵浦探测技术,研究了ITO薄膜的损伤情况,测量了不同功率密度激光辐照后薄膜的方块电阻,结合1-on-1法测定了ITO薄膜的50%损伤几率阈值。实验结果表明：薄膜越厚,方块电阻越小,激光损伤阈值越低;薄膜未完全损伤前,方块电阻随激光功率密度的增加而增大。理论计算与实验结果吻合较好。设计液晶光学器件中的ITO薄膜电极厚度时,应综合考虑激光损伤、透光率及薄膜电阻的影响。     

Second-harmonic generation in graded metallic films

We study the effective second-harmonic generation (SHG) susceptibility in graded metallic films by invoking the local field effects exactly and further numerically demonstrate that graded metallic films can serve as a novel optical material for producing a broad structure in both the linear and the SHG response and an enhancement in the SHG signal.     

Dependence of intermediated noble metals on the optical and electrical properties of ITO/metal/ITO multilayers

Sn doped In₂O₃ (ITO) single layer and a sandwich structure of ITO/metal/ITO (IMI) multilayer films were deposited on a polycarbonate substrate using radio-frequency and direct-current magnetron sputtering process without substrate heating. The intermediated metal films in the IMI structure were Au and Cu films and the thickness of each layer in the IMI films was kept constant at 50 nm/10 nm/40 nm. In this study, the ITO/Au/ITO films show the lowest resistivity of 5.6 × 10⁻⁵ Ω cm.However the films show the lower optical transmission of 71% at 550 nm than that (81%) of as deposited ITO films. The ITO/Cu/ITO films show an optical transmittance of 54% and electrical resistivity of 1.5 × 10⁻⁴ Ω cm. Only the ITO/Au/ITO films showed the diffraction peaks in the XRD pattern. The figure of merit indicated that the ITO/Au/ITO films performed better in a transparent conducting electrode than in ITO single layer films and ITO/Cu/ITO films.     

两种方法制备ITO薄膜的红外特性分析

比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.     

Electrical and optical properties of ITO and ITO/Cr-doped ITO films

In this paper we report on the effects of the insertion of Cr atoms on the electrical and optical properties of indium tin oxide (ITO) films to be used as electrodes in spin-polarized light-emitting devices. ITO films and ITO(80 nm)/Cr-doped ITO(20 nm) bilayers and Cr-doped ITO films with a thickness of 20 nm were grown by pulsed ArF excimer laser deposition. The optical, structural, morphological and electrical properties of ITO films and ITO/Cr-doped structures were characterized by UV–Visible transmission and reflection spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and Hall-effect analysis. For the different investigations, the samples were deposited on different substrates like silica and carbon coated Cu grids. ITO films with a thickness of 100 nm, a resistivity as low as ～4×10^?4 Ω?cm, an energy gap of ～4.3 eV and an atomic scale roughness were deposited at room temperature without any post-deposition process. The insertion of Cr into the ITO matrix in the upper 20 nm of the ITO matrix induced variations in the physical properties of the structure like an increase of average roughness (～0.4–0.5 nm) and resistivity (up to ～8×10^?4 Ω?cm). These variations were correlated to the microstructure of the Cr-doped ITO films with particular attention to the upper 20 nm.     

Laser direct patterning induced the tunable optical properties of indium tin oxide micro-hole arrays films

Here we introduce a facile method to fabricate patterned indium tin oxide (ITO) thin films via selective laser ablation at ambient conditions. By scanning the ITO thin films with focused Nd: YAG pulsed laser, the ITO thin films were selective ablated and patterned without using any conventional chemical etching or photolithography steps. Then we investigated the effects of scanning rate for the structure, morphology and optical properties of patterned ITO thin film. These results indicate that the epsilon-near-zero (ENZ) wavelength of ITO thin films can be tuned from 1100 nm to 1340 nm by adjusting the period of the micro-hole array in microstructure. The nonlinear absorption response of patterned ITO films was about 2.85 time than of the as-deposited ITO thin film. Additionally, the results of the Finite-Difference Time-Domain (FDTD) simulation are in good agreement with those of the experiments.     

Thickness Dependence of Resistivity and Optical Reflectance of ITO Films

Indium-tin-oxide （ITO） films deposited on crystalline silicon wafer and Corning glass are prepared by directcurrent magnetron sputtering method at room temperature with various thicknesses. The thickness dependences of structure, resistance and optical refectance of ITO films are characterized. The results show that when the film thickness is less than 40 nm, the resistivity and optical reflectance of the ITO film changes remarkably with thickness. The optoelectrical properties trend to stabilize when the thickness is over 55 nm. The GXRD result implies that the ITO film begins to crystallize if only the thickness is large enough.     

金、铜、铂、银表面光学二次谐波参数的研究

以1.06μm激光为基频光,测量了金、铜、铂、银膜的反射二次谐波随基频光偏振角的变化,在b=-1的条件下拟合求得了这几种样品面谐波电流的唯象参数“a”值。     

Ellipsometry investigation of the effects of annealing temperature on the optical properties of indium tin oxide thin films studied by Drude-Lorentz model

Float glass substrates covered by high quality ITO thin films (Balzers) were subjected for an hour to single thermal treatments at different temperature between 100 °C and 600 °C. In order to study the electric and optical properties of both annealed and not annealed ITO-covered float glasses, ellipsometry, spectrophotometry, impedance analysis, and X-ray measurements were performed. Moreover, variable angle spectroscopic ellipsometry provides relevant information on the electronic and optical properties of the samples. ITO film is modeled as a dense lower layer and a surface roughness layer. The estimated optical density for ITO and the optical density of the surface roughness ITO layer increases with the annealing temperature. In the near-IR range, the extinction coefficient decreases while the maximum of the absorption in the near UV range shift towards low photon energy as the annealing temperature increases. Spectrophotometry was used to estimate the optical band-gap energy of the samples. The thermal annealing changes strongly the structural and optical properties of ITO thin films, because during the thermal processes, the ITO thin film absorbs oxygen from air. This oxygen absorption decreases the oxygen vacancies therefore the defect densities in the crystalline structure of the ITO thin films also decrease, as confirmed both by ellipsometry and X-ray measurements.