块体MgB_2中Zr元素对其致密性和微观结构的影响

将Mg粉、Zr粉和B粉按比例混合获得MgxZr1-xB2(x=5%、10%和20%),压制成型后,在流通氩气的条件下于800℃烧结2h。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)分析显微结构和化学组成,并且对烧结后的样品进行差热分析DSC。结果表明,适量的Zr掺杂使得MgB2的平均晶粒尺寸变小,晶界面积增加和晶粒连接性改善,从而获得致密性较高的MgB2超导体。     

原位法MgB_2-B_4C复相超导体合成及相含量调控研究

以B4C和Mg为原料合成的MgB2-B4C复相超导体具有高的临界电流密度(Jc)和高的超导转变温度(Tc),是一种有潜力的实用MgB2超导材料,其成相机理对复相MgB2超导体的相含量调控和磁通钉扎研究具有重要意义。结合经典烧结理论,研究了B4C-Mg真空固相烧结制备MgB2-B4C复相超导体的超导相形成和晶粒生长过程,给出了B4C-Mg的金斯特林格扩散模型和MgB2晶粒生长过程。通过选择B4C原料粒径,MgB2-B4C复相超导体超导相体积相含量在18%-88%范围可控。相含量88%的MgB2-B4C复相超导体临界转变温度达33.5K,转变宽度1.5K。10 K环境6T外场下电流密度可以达到1×104A/cm2,表明MgB2-B4C复相超导体具有良好的磁通钉扎行为。     

Zr掺杂对MgB2超导微观结构和超导电性的影响

将Mg粉、Zr粉和B粉按比例混合获得Mg1-xZrxB2(x=5%10%和20%),压制成型后,在流通氩气的条件下于800℃烧结2h.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)分析烧结后样品的显微结构和化学组成,采用差热分析(DTA)观察Zr掺杂对MgB2分解温度的影响,并用物性测试仪(PPMS)测试样品的超...     

MgB2超导体的正电子湮没研究

本文利用正电子湮没技术(PAT)对不同密度的MgB2样品分别进行了测定,结果发现正电子在MgB2中自由态的湮没时间(本征寿命τ1)和在捕获态的湮没时间(缺陷寿命τ2)比其他高温超导体都明显要高,这反映了MgB2的体电子浓度相对于其它超导体要低,可能归因于MgB2超导材料本身的晶体结构和化学组成,MgB2超导材料的正电子寿命不仅与晶体的结构缺陷,而且与样品的密度或孔隙度有关.     

TiB2掺杂MgB2超导线材临界电流密度和显微结构研究

以低碳钢管为包套材料,采用原位粉末套管法制备出5 mol%TiB2掺杂的MgB2超导线材.利用X射线衍射、扫描电子显微镜、能谱分析和标准的直流四电极电阻法分别测试了线材的物相组成、显微结构、化学组成和临界电流密度(Jc).结果显示,TiB2掺杂能够提高MgB2线材的Jc,使其达到了9960 A/cm2(6K,4.5T)和1110 A/cm2(6K,7T),比未掺杂线材分别提高了14%和26%.TIB2掺杂引起的MgB2晶粒减小,晶界面积增加和晶粒连结性改善,是Jc提高的主要原因.在未掺杂MgB2线材中还发现了微裂纹、MgO晶须等不利于超导性能的特殊显微结构.     

先位粉末套管法制备MgB2/Fe线材的超导性能研究

采用先位法将MgB2粉装入纯铁管中,制备出MgB2/Fe超导线材.用X射线衍射仪和扫描电子显微镜分析了样品的物相组成和显微结构;用SQUID测量了样品的超导转变温度;用标准四引线法测量了短样的临界电流.结果显示,超导样品的临界转变温度约为38.3 K,在4.2 K/4 T下MgB2/Fe线材的临界电流密度为～104A/cm2.研究结果表明,高温退火有效地减少了冷加工过程中产生的应力,改善了晶粒连接性,提高了芯材的致密度,可以显著地提高先位法制备线材的临界电流密度.     

MgB2超导体的正电子湮没研究

本文利用正电子湮没技术（PAT）对不同密度的MgB2样品分别进行了测定，结果发现正电子在MgB2中自由态的湮没时间（本征寿命τ1）和在捕获态的湮没时间（缺陷寿命τ2）比其他高温超导体都明显要高，这反映了MgB2的体电子浓度相对于其它超导体要低，可能归因于MgB2超导材料本身的晶体结构和化学组成，MgB2超导材料的正电子寿命不仅与晶体的结构缺陷，而且与样品的密度或孔隙度有关．     

Mg1+xB2中过量Mg对其超导电性的影响

利用固相反应法制备了非化学计量的二元金属硼化物超导体Mg1+xB2(x=0,0.1,0.2).粉末X光衍射(XRD)表明较多的过量Mg极易导致绝缘的MgB6和MgO杂相,Mg与MgB2不易形成固溶体.当杂相较少时,对样品电阻率和交流磁化率研究发现其超导临界温度Tc几乎不受杂相的影响,但正常态电阻率随Mg过量增加而迅速增大,同时抗磁屏蔽信号下降.对交流磁化率的实部、虚部与Mg含量等关系作了讨论.我们的结果说明过量Mg导致的杂质对晶界区的Josephson耦合有破坏作用.     

原位法MgB2-B4C复相超导体的成相与特性

以B4C粉末与Mg粉为原料,采用真空同相反应法成功制备了复相MgB2超导块材,研究了不同制备工艺下MgB2的成相,测量分析了材料的X射线衍射谱、扫描电镜图像、低温电输运特性等.结果显示,合成的复相超导材料含MgB2超导相、B4C绝缘相和少量MgB2C2杂相,MgB2超导相含量与B4C粒径、合成温度、反应时间等有关,并在...     

MgB_2(001)面超导结构的电子浓度第一原理分析

采用密度范函理论计算了金属化合物MgB2(001)薄膜结构的电子能带结构和状态密度,计算的交换相关能分别采用LDA和GGA。规范保守赝势的计算结果表明,晶格常数与实验值误差在很小的范围内,分析了引起MgB2(001)面结构超导转变时电子浓度和偏态密度的变化情况,发现构成该超导体结构的成键有三种,着重从结构的电子浓度变化分析了其超导特性,六角蜂窝状结构中硼原子间相互作用为sp2杂化的共价键,镁原子和硼原子之间是离子键结合,镁原子层是金属键结合,镁原子的价电子部分转移到硼原子的pz轨道,部分电子为镁原子层共用。MgB2的超导机制为强烈的电子-声子耦合,为B原子间强烈的共价作用形成,是传统S波超导体。对Mg元素同一主族的其它硼化物进行布居分析,发现MgB2中Mg原子电子转移明显强于BeB2和CaB2,说明电子浓度是引起超导转变的一个重要因素。     

基于碳化硼复相MgB2超导体制备及特性

以廉价的B4C粉和Mg粉为原料,用真空固相反应法成功制备了复相MgB2-B4C超导材料,通过X-射线和扫描电子显微镜分析了样品的成相和织构,除MgB2、B4C和MgB2C2外样品中未明显检测到其它杂相,其中MgB2相含量高达87.7%.电阻-温度特性测量表明,所制备的样品零电阻温度Tc(0)=31.5 K,转变宽度(T...     

Effect of Al particle size on the reaction kinetics and densification of TiAl intermetallics

The present investigation deals with response of the particle size of aluminum on the reactive sintering of Ti–Al intermetallics and subsequently on their reaction kinetics and densification behavior. Aluminum powders of initial average particle size of 44 μm were milled for various durations in a planetary ball mill to produce average particles sizes of 100, 28 and 7 μm. These aluminum powders of various particle sizes i.e. 100, 28 and 7 μm were mixed with titanium powder of average particles size of 44 μm in the ratio of 1:1 corresponding to the Ti–Al intermetallic composition. The reactive sintering temperatures of the mixtures were determined by DTA and the effect of change in particle Al particle size has been determined for the activation energy ofthe self-propagating reaction. The effect of Al particle size on the sintering was determined by studying density and microstructure.     

IMD-MgB_(2)超导线材的研究进展

中心镁扩散技术(IMD)自2003年被Giunchi等人首创以来,国内外学者系统地揭示了Mg与B反应机制,MgB_(2)烧结成相过程及掺杂物的影响;IMD-MgB_(2)线材具有致密的MgB_(2)层,J_(e)远高于同等条件下传统PIT法制备的线材.目前IMD-MgB_(2)百米级线材已被成功制备,为IMD-MgB_(2)超导线材的生产应用奠定了基础.本文首先简要介绍了IMD-MgB_(2)超导线材的发展历程,其次讨论了对线材超导性能影响的相关因素,包括B粉和C掺杂、有效的MgB_(2)层密度、晶粒尺寸、粉末填充系数、线材直径、热处理条件及线材的交流损耗,最后简述了IMD-MgB_(2)超导线材目前存在的技术难题及未来的工作重心.     

Size dependence of the properties of boron nitride crystals

The physical properties of powder samples of high-strength cubic boron nitride are studied for particle sizes from 2 to 200 μm. The studies include the impurity (elemental) composition of the bulk and the surface composition, the magnetic, electrophysical, microwave-spectroscopic characteristics, as well as the adsorption-structural characteristics, the density and the physical-chemical properties of the material. It is shown that the physical properties depend to a large degree on the particle size of the powder. The nature of the observed effects is discussed. Zh. Tekh. Fiz. 67, 36–40 (June 1997)     

Phase analysis of superconducting polycrystalline MgB(2)

Superconducting MgB(2) ceramics were prepared and yield superconducting transition temperatures of about 39 K. For covering the various length scales on which inhomogeneities appear in MgB(2), electron-probe micro-analysis (EPMA) and analytical transmission electron microscopy (TEM) were applied for a phase analysis. Particularly useful were the preliminary electron spectroscopic imaging (ESI) results in the TEM. It could be shown by EPMA that the microstructure consists of a Mg-B-O matrix and boron-rich secondary phases of composition close to MgB(12). It was unclear in which form oxygen was present in the superconducting matrix. By combining the acquisition of B-K and O-K edge jump ratio images and energy-dispersive X-ray spectroscopy in the TEM, we could prove that the matrix consists of superconducting MgB(2) and MgO. Most of the MgO precipitates and grains appear with diameters between 20 and 300 nm. The size distribution of MgO was inhomogeneous and oxygen-rich areas of dimensions >1 microm were also observed. Edge jump ratio images obtained by ESI were analysed for determining the signal values and effects of multiple inelastic scattering.     

钡钨阴极优化与热电子发射性能

分别从基体和铝酸盐两方面优化了钡钨阴极.在基体方面,首先采用窄粒度钨粉结合放电等离子体烧结获得了孔径分布窄的基体;再利用射频等离子体球化技术制备了球形钨粉,采用球形钨粉制备了多孔基体,获得了孔通道光滑、内孔连通性好、孔径分布更加窄的基体.与窄粒度钨粉基体相比,球形钨粉制备的阴极,空间电荷限制区的斜率由1.25增加至1.37,发射均匀性得到提高,拐点电流密度由6.6 A·cm^–2增至6.96 A·cm^–2.在此基础上,采用液相法改善了铝酸盐物相组成,发现空间电荷限制区的斜率增加至1.44,拐点电流密度增加至21.2 A·cm^–2.通过理论计算对钡钨阴极发射的物理本质进行了研究,发现钡钨阴极发射规律遵循偶极子理论.     

Microstructure study of direct laser fabricated Ti alloys using powder and wire

A compositionally graded material has been fabricated using direct laser fabrication (DFL). Two types of feedstock were fed simultaneously into the laser focal point, a burn resistant (BurTi) alloy Ti-25V-15Cr-2Al-0.2C powder and a Ti-6Al-4V wire. The local composition of the alloy was changed by altering the ratio of powder to wire by varying the feed rate of the powder whilst maintaining a fixed feed rate of wire-feed. For the range of compositions between about 20% and 100% BurTi only the beta phase was observed and the composition and lattice parameter varied monotonically. The grain size was found to be much finer in these functionally graded samples than in laser fabricated Ti64. Some samples were made using the wire-feed alone, where it was found that the microstructure is different from that found when using powder feed alone. The results are discussed in terms of the power requirements for laser fabrication of powder and wire samples.