氢和温度对质子辐照硅的正电子捕获的影响

用正电子湮没寿命测量研究了在3.2×10¹⁷cm^-2和3.6×10¹⁶cm^-2质子辐照硅单晶中的正电子捕获,观测到辐照诱导的捕获正电子的缺陷主要是双空位,辐照过程中高剂量样品的双空位基本上都捕获了氢,低剂量样品还有一小部分未捕获氢,在高剂量样品的两轮和低剂量样品的第一轮升温测量中都观测到双空位进一步捕获氢,含氢双空位的荷电态随温度升高在145K附近发生由负荷电向中性转变,它的负荷电态正电子寿命比中性态正电子寿命长,无论 关键词：     

用正电子湮没研究高聚物聚甲基丙烯酸甲脂的结构转变与自由体积特性

在20—150℃温度范围内,测量了高聚物聚甲基丙烯酸甲酯(PMMA)中的正电子湮没寿命谱和湮没辐射多普勒展宽谱随温度的变化。两种正电子湮没参数的温度关系均一致反映了高聚物PMMA中的结构变化。108℃和48℃处的变化与玻璃化转变和β相交有关,而本实验发现正电子湮没特征在84℃处出现异常,这可能是此温度下少量自由体积孔洞的连通所致。由实验测得的o-Ps寿命及其相对强度计算了PMMA中自由体积孔洞的尺寸及自由体积分数随温度的变化。     

用正电子湮没技术研究形变铁的恢复

本文介绍应用正电子湮没寿命和多普勒加宽方法研究60％形变铁等时退火各阶段中缺陷的恢复行为,实验结果说明正电子湮没平均寿命τ及多普勒加宽的S参数都是退火温度的函数,完整晶体中湮没寿命τ_f=111±lPS,缺陷中湮没寿命τ_d=162±lps,本文还根据捕获模型计算了正电子的捕获速率及τ₁,结果证明与理论预期的完全一致,经计算得出捕获正电于的相对缺陷浓度的范围为10^-7-10^-4数量级。 关键词：     

不同气氛下多孔硅中电子偶素湮没行为研究

使用正电子湮没谱学方法,在不同气氛下对电化学腐蚀法制备的多孔硅中电子偶素的湮没行为进行了系统的研究.正电子湮没寿命谱测试结果表明,样品中存在长达40 ns的电子偶素湮没成分,并且进入多孔硅膜层的正电子约有80%形成电子偶素,具有非常高的电子偶素产额;在氧气气氛下,由于气体导致o-Ps发生自旋转化猝灭是使多孔硅样品中电子偶素寿命缩短的主要原因.结合正电子寿命-动量关联谱测量结果,分析了不同气氛下多孔硅样品中电子偶素湮没寿命及动量变化关系,讨论了多孔硅中电子偶素的湮没机理以及气氛对孔径计算理论模型的影响. 关键词： 电子偶素 正电子湮没谱学方法 多孔硅     

金属氧化物超导陶瓷Y-123体系烧结过程与结构缺陷的正电子实验研究

利用正电子湮没技术,结合X射线衍射和扫描电子显微镜结构分析,对Y-123超导体烧结过程进行了研究,给出了烧结时间、烧结温度对该体系结晶度和晶体结构的影响特征,发现在950℃温度烧结下,随烧结时间的增加,Y-123体系的正交畸变度增加;而就整体而言,正电子平均寿命随烧结温度和烧结时间增加而增加,并趋于饱和.证明在烧结温度为920—950℃、烧结时间为12—72h的实验条件下,Y-123超导材料中的缺陷分布趋于稳定.讨论了烧结过程中材料内部的缺陷变化特征 关键词： 正电子寿命谱 2Cu₃O_7-δ超导体')" href="#">YBa₂Cu₃O_7-δ超导体 烧结过程 晶体结构     

物理新闻和动态

反物质-物质分子的制造美国加州大学河边分校科学家David Cassidy和Allen Mills找到了物质和反物质结合的确凿证据,他们发现两个正电子素原子(或称电子偶素,positronium,简写为Ps)可以相互结合,形成正电子素分子(molecular positronium,简写为Ps2).科学家们如何观察短寿命的Ps2分子呢?首先,Cassidy和Mills采用22NaCl作为放射源产生正电子,尽管短寿命的正电子将和电子结合而迅速湮没产生γ射线,但实验中他们使用Surko等发展的捕获技术,可将正电子约束和储存在“磁阱”中,大大延长它们的寿命,并很快积累数百万个正电子.然后从磁阱中提取…     

YBa2Cu3O7-δ超导体氧缺陷的正电子寿命谱

系统研究了不同氧缺陷的YBa_2Cu_3O_(7-δ)(δ=0.06—0.68)超导体正常态(300K)和超导态(77K)下的正电子寿命谱,利用两态捕获模型对实验结果进行了分析,计算了相应的局域电子密度n_c和空位浓度C_v随氧缺陷δ的变化,给出了氧缺陷YBa_2Cu_3O_(7-δ)体系的正电子湮没特征,讨论了相应的正电子湮没机制以及与超导电性之间的关联。 关键词：     

用正电子湮没技术研究USY沸石的“二次孔”结构

测量了NaY及USY沸石的正电子寿命谱．得到NaY沸石有四个寿命分量：两个短寿命分量和两个长寿命分量．两个长寿命分量中，τ₃，τ₄分别是o-Ps在β笼和超笼中的湮没．USY沸石有五个寿命分量：两个短寿命分量和三个长寿命分量，三个长寿命分量中，τ₃为o-Ps在笼中的湮没，τ₄，τ₅分别为o-Ps在“二次微孔”和“二次中孔”中的湮没．与NaY沸石相比，在真空中，USY的τ₄增加到 关键词：     

Al-4%Ag合金中Ag原子偏析的低温正电子湮没参数研究

分别研究了823 K淬火处理和20%形变量的Al-4%Ag低温下Ag析出物对正电子的捕获行为的变化。采用正电子湮没寿命谱(PALS)技术和符合多普勒展宽能谱(CDBS)在温度范围10~293 K内对其进行表征。多普勒展宽能谱结果表明2种样品中均存在Ag析出物。正电子寿命谱的解谱结果中的各组分给出了Ag析出物随测量温度的变化规律。在170 ~273 K之间,正电子湮没行为具有较强的温度依赖性。但对于两个具有不同类型缺陷的样品,在低于170 K时观察到样品中Ag析出物捕获正电子能力出现了差异。随着测量温度的降低,淬火样品中的Ag析出物的正电子寿命和强度基本不变。在低于170 K的测量中,形变样品中的Ag析出物对正电子的捕获能力仍旧存在着较强的温度依赖性,但是变化幅度在逐渐减弱。当测量温度提升到室温(273~293 K),越来越多的正电子从Ag析出物中逃逸,逐渐回到自由状态或被其他深陷阱所捕获,失去了对温度的依赖性。     

小空位团浅能级对正电子的声子激发比捕获率

若小空位团中存在束缚能小于晶体德拜能量的正电子捕获态,则这一能态对自由正电子的捕获具有较强的温度依赖性。这种温度依赖性有两种类型,且比捕获率的取值也可能相当高,显示了与位错的很大不同。 关键词：     

Temperature effect on positron trapping in Fe59Ni25Cr16 alloy containing voids

Positron annihilation measurements were performed in austenitic Fe₅₉Ni₂₅Cr₁₆ alloy containing vacancy-type defects. Lifetime data were recorded between 4K and 400K. The positron trapping process was studied as a function of temperature and cluster size. The smaller defects characterized by a lifetime of 260 ps yield an unchanged trapping rate during temperature scanning. However, the trapping phenomenon is strongly temperature dependent for the larger size defects, with a typical lifetime of 500 ps.     

Helium bubbles in neutron-irradiated copper-boron studied by positron annihilation

The influence of helium, introduced by the ¹⁰B(n, α)⁷Li reaction, on the evolution of defect structure in copper containing a few hundred ppm boron has been studied by detailed positron lifetime and two-photon angular correlation measurements, supplemented by TEM studies. In the as-irradiated state of Cu-B, two lifetime components have been resolved. The shorter lifetime, τ₁, = 167 ps of 97% intensity, has been understood as due to positron trapping at small helium-vacancy complexes, while the longer lifetime τ₂ = 450 ps of 3% intensity is explained as due to helium-free voids. Marked changes in the annihilation characteristics observed at 670 K are interpreted in terms of the nucleation of microbubbles, controlled by thermally activated helium migration to vacancy traps. Corroborative evidence for the onset of helium clustering is obtained from the change in the average size of positron traps as deduced from the smearing of the measured angular correlation spectra. Helium bubbles and helium-free voids coexisting in the system have been distinguished by a three-component analysis of the lifetime spectra. Bubbles are found to be stable beyond the temperature of dissociation of voids. The size and concentration of bubbles, determined independently by TEM measurements, are in accordance with the positron annihilation results in the growth stage. The observed positron lifetime at higher annealing temperatures has been analysed by relating the annihilation rate to helium atom density and helium pressures in bubbles evaluated. These pressures are in satisfactory agreement with the estimates of equilibrium pressures, leading to the conclusion that bubble relaxation occurs by the mechanism of thermal vacancy condensation.     

Positrons and electron-irradiation induced defects in the layered semiconductor InSe

The positron annihilation characteristics of the layered semiconductor InSe have been investigated. No evidence for low temperature positron trapping is found in as-grown and heavily deformed InSe. The temperature dependence of the S-parameter in these sample exhibits an increase rate in good agreement with the linear expansion coefficient along the c-axis. The positron lifetime spectra of electron-irradiated 0.01% Sn-doped InSe show a long-lifetime component of 336 ps which is tentatively attributed to positrons trapped at isolated In vacancies. Isochronal annealing experiments performed on these samples show that the recovery of the positron lifetime measured at 77K is accomplished in two stages. The first, starting after annealing at 150K, could be induced by the formation of complexes (V_In-Sn_In). The second stage, observed at temperatures T375K, is attributed to the dissociation of these complexes and subsequent annealing of the In vacancies.     

Lattice site occupation and precipitate dissolution of implanted and irradiated Al(Rh) and Al(Ir)

Abstract

The apparent substitutional fraction, f_s , of Rh and Ir implanted into Al single crystals at 293 K with peak concentrations of 0.17±0.01 at.% is 0.57 ± 0.02 and 0.47±0.02, respectively. Upon annealing to 593 K f_s decreases and the critical angles of the impurities narrow due to partially coherent precipitate formation. Irradiation with 300 keV Ar ions at 77 K with deposited energy densities up to 20 dpa leads to precipitate dissolution accompanied by an increase of f_s up to 0.70±0.02 for Al(Rh) and 0.82±0.02 for Al(Ir). The relatively high f_s values do not decrease during annealing from 77 K to 293 K, indicating that vacancy trapping is not a dominant process. Precipitate formation seems therefore to limit the maximum obtainable f_s values during implantation at 293 K for these systems.     

单晶硅表面均匀小尺寸金字塔制备及其特性研究

表面织构是一种通过有效的光俘获增加短路电流从而提高太阳电池效率的主要途径之一.在加入间隙式超声和NaClO添加剂的碱性四甲基氢氧化铵(TMAH)溶液中对单晶硅表面进行织构化处理,研究超声与NaClO在织构过程中对金字塔成核和生长的影响,以及金字塔大小对高温工艺之后的单晶硅少子寿命的影响.研究表明,通过在织构溶液中加入间隙式超声控制气泡停留在硅片表面的时间和脱离硅片表面速度,增强了小尺寸金字塔的均匀分布.织构之后硅片在AM1.5G光谱下的加权平均反射率能够达到12.4%,在高温扩散和氧化之后少子寿命的大小与金字塔大小之间存在近似于指数衰减函数的关系. 关键词： 表面织构化 反射率 少子寿命 单晶硅太阳电池     

Adsorption and desorption of ammonia,hydrogen, and nitrogen on ruthenium (0001)

The adsorption of ammonia, hydrogen, and nitrogen on a Ru(0001) surface have been investigated by Auger electron spectroscopy, low-energy electron diffraction, and thermal flash desorption. The adsorption of ammonia on Ru(0001) can be divided into a low temperature mode (100 K) and a higher temperature mode (300–500 K). For a crystal temperature of 100 K the ammonia adsorbs into two weakly bound molecular γ states with s = 0.2. The ammonia desorbs as NH₃ molecules with desorption energies of 0.32 and 0.46 eV. At 300–500 K adsorption occurs via an activated process with a low sticking probability (s ? 2 × 10^?4).This adsorption is accompanied by dissociation and formation of an apparent (2 × 2) LEED pattern. Hydrogen adsorbs readily (s = 0.4) on Ru(0001) at 100 K and desorbs with 2nd order kinetics in the temperature range 350–450 K. Nitrogen does not appreciably adsorb on Ru(0001) even at 100 K; maximum nitrogen coverage obtained was estimated to be <2% of a monolayer. Changes in the ammonia flash desorption spectra after hydrogen preadsorption at 100 K will be discussed.     

Positron trapping mechanism in plastically deformed magnesium

In order to investigate positron–dislocation interactions, the evolution of the positron lifetime parameters with the degree of deformation of Mg samples was studied. For a low degree of thickness reduction a second component of 244?ps could be decomposed from the positron lifetime spectra. This component was attributed to dislocations introduced during deformation. For thickness reductions higher than 15% the value of the second component increases to 253?ps. This lifetime was assigned to jogs introduced along dislocations when multiple deformation systems were activated at high degrees of deformation. Positron experimental results were interpreted by the assumption that dislocations act as a previous step to positron localization at jogs. A trapping model with three stages, bulk annihilation and trapping at both dislocations and jogs, has been proposed to describe the trapping mechanism in the highly deformed samples. A sample with a thickness reduction of 40% was annealed from room temperature to 525?K. A recovery stage centred at 425?K was been detected. According to the literature this stage has been assigned to anneal out of dislocations.     

Lifetime of the Cs 6P1/2 state in bcc and hcp solid 4He

We present the first experimental study of time-resolved fluorescence from laser-excited Cs(6P_1/2) atoms isolated in a solid ⁴He matrix. The results are compared to the predictions of the bubble model including the interaction of the atomic dipole with its radiation reflected at the bubble interface. Our results show that in liquid He as well as in the body-centered cubic (bcc) crystalline phase of He the lifetime of excited Cs atoms does not depend on He pressure, in agreement with our theory. When going from the bcc to the hexagonally close-packed (hcp) phase of ⁴He the lifetime is reduced by ≈10% and decreases further with increasing He pressure. We assign this effect to the formation of Cs^*He_n exciplexes, and determine the pressure dependence of the probability that the 6P_1/2 state decays via this nonradiative channel.     

Positron escape from annihilation centers in electron-irradiated Si crystals

The mean positron lifetime in irradiated Si diminishes with increasing temperature between 77°K and 300°K. Isochronal high-temperature crystal anneals reduce the effect. Analysis suggests that thermally activated positrons escape after trapping in radiation-induced defects.     

Pressure dependence of the Mg transition in superfluid He

The pressure shifts of the 3s4s³S P_0,1,2 transition of magnesium atoms immersed in superfluid helium have been measured at K between saturated vapour pressure and 24 bar. The wavelength is blue shifted linearly by . This value can be satisfactorily described in the framework of the standard bubble model. Received 18 February 2000