Transport properties of topological insulators films and nanowires

The last several years have witnessed the rapid developments in the study and understanding of topological insulators. In this review, after a brief summary of the history of topological insulators, we focus on the recent progress made in transport experiments on topological insulator films and nanowires. Some quantum phenomena, including the weak antilocalization, the Aharonov-Bobm effect, and the Shubnikov-de Haas oscillations, observed in these nanostructures are described. In addition, the electronic transport evidence of the superconducting proximity effect as well as an anomalous resistance enhancement in topological insulator/superconductor hybrid structures is included.     

Tunable topological quantum states in three- and two-dimensional materials

We review our theoretical advances in tunable topological quantum states in three- and twodimensional materials with strong spin–orbital couplings. In three-dimensional systems, we propose a new tunable topological insulator, bismuth-based skutterudites in which topological insulating states can be induced by external strains. The orbitals involved in the topological band-inversion process are the d- and p-orbitals, unlike typical topological insulators such as Bi₂Se₃and BiTeI, where only the p-orbitals are involved in the band-inversion process. Owing to the presence of large d-electronic states, the electronic interaction in our proposed topological insulator is much stronger than that in other conventional topological insulators. In two-dimensional systems, we investigated 3d-transition-metal-doped silicene. Using both an analytical model and first-principles Wannier interpolation, we demonstrate that silicene decorated with certain 3d transition metals such as vanadium can sustain a stable quantum anomalous Hall effect. We also predict that the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition-metal-doped silicenes where the energy band inversion occurs. These findings provide realistic materials in which topological states could be arbitrarily controlled.     

Proximity effects in topological insulator heterostructures

Topological insulators （Tls） are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which con- ventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insu- lator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topo- logical helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath, These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI- based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications.     

声子晶体中的多重拓扑相

研究了圆环型波导依照蜂窝结构排列的声子晶体系统中的拓扑相变.利用晶格结构的点群对称性实现赝自旋,并在圆环中引入旋转气流来打破时间反演对称性.通过紧束缚近似模型计算的解析结果表明,没有引入气流时,调节几何参数,系统存在普通绝缘体和量子自旋霍尔效应绝缘体两个相;引入气流后,可以实现新的时间反演对称性破缺的量子自旋霍尔效应相,而增大气流强度,则可以实现量子反常霍尔效应相.这三个拓扑相可以通过自旋陈数来分类.通过有限元软件模拟了多个系统中边界态的传播,发现不同于量子自旋霍尔效应相,量子反常霍尔相系统的表面只支持一种自旋的边界态,并且它无需时间反演对称性保护.     

拓扑绝缘体/超导体异质结中的近邻效应

拓扑超导体自身具有对量子退相干天然的免疫性以及可编织性,这使得它在现代量子计算领域中受到了越来越多的重视,并且成为了下一代计算技术中最有希望的候选者之一。由于拓扑超导态在固有拓扑超导体中相当罕见,因此,当前大部分实验上的工作主要集中在由 s 波超导体与拓扑绝缘体之间通过近邻效应所诱导的拓扑超导体上。本论文中,我们回顾了基于拓扑绝缘体/超导体异质结的拓扑超导体的研究进展。在理论上,Fu 和 Kane 提出,通过近邻效应将 s 波超导体的能隙引入到拓扑绝缘体,可以诱导出拓扑超导电性。在实验上,我们也回顾了一些不同体系中的拓扑超导近邻效应的研究进展。文章的第一部分,我们介绍了一些异质结,包括：三维拓扑绝缘体 Bi2Se3和 Bi2Se3 与 s 波超导体NbSe2 以及 d 波超导体 Bi2Sr2CaCu2O8+δ 的异质结,拓扑绝缘体 Sn1−xPbxTe 与 Pb 的异质结,二维拓扑绝缘体 WTe2 与NbSe2 的异质结。此外,还介绍了 TiBiSe2 在 Pb 上的拓扑绝缘近邻效应。另一部分中,我们对基于拓扑绝缘体的约瑟夫森结进行了回顾,包括著名的基于 Fu-Kane 体系的拓扑绝缘体约瑟夫森结,以及基于约瑟夫森结的超导量子干涉器件。     

Optical reflection properties for the interface associated with Chern insulator and chiral metamaterial

Based on the topological nature of Chern insulator and magnetoelectric coupling of chiral metamaterial, we investigate the electrodynamics for the interface associated with the two media. The Fresnel coefficients of the interface between Chern insulator and chiral metamaterial, as well as the corresponding polarization rotation angles, are derived. The reflection characteristics of the linearly polarized incident wave at the interface, such as complete polarization conversion and change of polarization state, are discussed. Under the combined influence of Chern insulator and chiral metamaterial, the partial polarization conversion may be enhanced to the complete polarization conversion, and the chiral metamaterial may compensate for the suppression effect of longitudinal conductivity of Chern insulator on the polarization conversion.     

二维拓扑绝缘体退相干效应研究

拓扑绝缘体是当前凝聚态物理研究的热点.退相干效应对该体系的影响的研究不仅有重要的理论意义,而且也是实现未来量子器件的不可或缺的前期工作.文章作者从理论上研究了退相干对二维拓扑绝缘体特别是量子自旋霍尔效应的影响.研究结果表明,作为量子自旋霍尔效应的标志的量子化纵向电阻平台对不破坏自旋记忆的退相干效应(普通退相干)不敏感,但却对破坏自旋记忆的退相干效应(自旋退相干)非常敏感.因此,该量子化平台只能在尺寸小于自旋退相干长度的介观样品中存在,从而解释了量子自旋霍尔效应实验中所观测到的结果(见Science,2007,318:766).同时,文章作者还定义了一个新的物理量,即自旋霍尔电阻,并发现该自旋霍尔电阻也有量子化平台.特别是该量子化平台对两种类型的退相干都不敏感.这说明在宏观样品中也能观测到自旋霍尔电阻的量子化平台,因此更能全面地反映量子自旋霍尔效应的拓扑特性.     

Bi2Te3拓扑绝缘体表面颗粒化铅膜诱导的超导邻近效应

拓扑绝缘体的出现为寻找拓扑超导体和Majorana费米子提供了一种可能的途径. 在拓扑绝缘体Bi₂Te₃表面沉积极薄的不连续铅膜, 试图通过邻近效应感应出大片的超导区, 为下一步研究拓扑超导电性创造条件.借助四引线电输运测量实验, 在0.25 K的低温下看到了超流现象, 表明沉积在Bi₂Te₃表面的厚度小于20 nm的颗粒化铅膜能够诱导邻近效应, 并且使大片Bi₂Te₃超导. 关键词： 超导邻近效应 S-N-S结 拓扑绝缘体     

Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction

Recently experiments and theories show that the tunnel magnetoresistance （TMR） does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-flip effect in the insulator, this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet （FM/I/FM） tunnelling junction by using Slonczewsik＇s model. A more general expression of TMR ratio as a function of barrier height, interface roughness and spin-flip effect is obtained. In lower barrier case, it shows that the TMR ratio depends on the roughscattering effect and spin-flip effect.     

Topological quantization in units of the fine structure constant

Fundamental topological phenomena in condensed matter physics are associated with a quantized electromagnetic response in units of fundamental constants. Recently, it has been predicted theoretically that the time-reversal invariant topological insulator in three dimensions exhibits a topological magnetoelectric effect quantized in units of the fine structure constant α=e2/?c. In this Letter, we propose an optical experiment to directly measure this topological quantization phenomenon, independent of material details. Our proposal also provides a way to measure the half-quantized Hall conductances on the two surfaces of the topological insulator independently of each other.     

磁场中拓扑物态的量子输运

拓扑物态包括拓扑绝缘体、拓扑半金属以及拓扑超导体.拓扑物态奇异的能带结构以及受拓扑保护的新奇表面态,使其具有了独特的输运性质.拓扑半金属作为物质的一种三维拓扑态具有无能隙的准粒子激发,根据导带和价带的接触类型分为外尔半金属、狄拉克半金属和节线半金属.本文以拓扑半金属为主回顾了在磁场下拓扑物态中量子输运的最新工作,在不同的磁场范围内分别给出了描述拓扑物态输运行为的主要理论.     

拓扑绝缘基铁磁/铁磁超导隧道结的磁效应和塞曼效应(英文)

运用拓展的BTK理论研究了拓扑绝缘层上铁磁/铁磁超导隧道结的磁效应和塞曼效应,同时考虑了铁磁体和铁磁超导体之间的费米能级错配效应.研究发现:在该系统中塞曼效应和邻近效应可以共存;铁磁体和铁磁超导体之间的费米能级错配效应能够增强系统中发生在eV=Δ处的Andreev谐振散射过程和邻近效应.     

在预刻蚀的衬底上通过分子束外延直接生长出拓扑绝缘体薄膜的微器件

在利用光刻将拓扑绝缘体外延薄膜加工成微米尺寸结构的过程中,所用的各种化学物质会导致薄膜质量的下降.在实验中,通过在钛酸锶衬底上预先光刻出Hall bar形状的凸平台并以此为模板进行拓扑绝缘体(Bi x Sb1-x)2Te3薄膜的分子束外延生长,直接获得了薄膜的Hall bar微器件,从而避免了光刻过程对材料质量的影响.原子力显微镜和输运测量结果均显示该微器件保持了(Bi x Sb1-x)2Te3外延薄膜原有的性质.这种新的微器件制备方法有助于在拓扑绝缘体中实现各种新奇的量子效应,并可推广于其他外延生长的低维系统.     

Topological Phase Transition with Larger Winding Number in the Non-Hermitian Dimerized Lattice

The topological phase transitions among normal insulator phase, two kinds of topological insulator phases, and topological semimetal phase are shown based on the non-Hermitian dimerized Su–Schrieffer–Heeger (SSH) model with the nonreciprocal intercell and long-range hopping. In contrast to the previous work, it is found that the topological insulator phase in the present SSH model can hold the larger non-Bloch winding number accompanied by exceptional winding of the generalized Brillouin zone around the gap-closing points. Compared with the usual topological insulator phase in non-Hermitian SSH model, the topological insulator with the larger winding number owns two pairs of zero energy modes with a distinct form of edge localization in the gap. The physical mechanism of the distinct edge localization for zero energy modes via a equivalent Hermitian version of the non-Hermitian SSH model is revealed. Additionally, the process of the phase transition is visualized among normal insulator phase, topological insulator phases, and topological semimetal phase in detail via the evolution of the gap-closing points on the plane of generalized Brillouin zone. This work further verifies the non-Bloch theory and enrich the investigation about the topologically nontrivial phase with the larger topological invariant in the non-Hermitian SSH model.     

Cloaking magnetic field and generating electric field with topological insulator and high permeability material

Topological insulator is a new state of quantum matter. When applied magnetic field is applied on a topological insulator, not only the magnetic field is induced, but also the electric field is induced, vice versa. We designed bi-layer magnetic cloak with topological insulator and high permeability material (HPM), derived the electric field and magnetic field inside and outside the bi-layer topological insulator and HPM. Calculation and simulation results show that the applied magnetic field is cloaked by the bi-layer topological insulator and HPM, and the uniform electric field is induced in the cloaked region.     

Double Andreev reflections at surface states of the topological insulators with hexagonal warping

We study the Andreev reflection(AR)at the interface of the topological insulator with hexagonal warping and superconductor junction.Due to the hexagonal warping effect,the double ARs are found in a certain range of the incident angle,where for one incident electron beam,two beams of holes are reflected back.Interestingly,both the beams of holes are reflected as retro-AR on the same side of the normal line of the interface but with different reflection angles,different from the previously reported double AR with one retro-AR and one specular-AR.The double reflections owing to the warping effect show the optics-like property of the Dirac fermion and can stimulate the double reflections of light in anisotropic crystals.In addition,we find that the double ARs are dependent on the hexagonal warping parameter nonmonotonically,and in an intermediate strength the double AR phenomenon is prominent,providing a possibility to explore the warping parameter of topological insulators.     

Quantum Anomalous Hall Multilayers Grown by Molecular Beam Epitaxy

Quantum anomalous Hall(QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the applications of the dissipationless chiral edge channels in low energy consumption electronics. Such a QAH multilayer can also be engineered into other exotic topological phases such as a magnetic Weyl semimetal with only one pair of Weyl points. This work reports the first experimental realization of QAH multilayers in the superlattices composed of magnetically doped(Bi,Sb)_2Te_3 topological insulator and Cd Se normal insulator layers grown by molecular beam epitaxy. The obtained multilayer samples show quantized Hall resistance h/N_e~2, where h is Planck's constant, e is the elementary charge and N is the number of the magnetic topological insulator layers, resembling a high Chern number QAH insulator. The QAH multilayers provide an excellent platform to study various topological states of matter.     

Topological Anderson insulator in two-dimensional non-Hermitian systems

We study the disorder-induced phase transition in two-dimensional non-Hermitian systems. First, the applicability of the noncommutative geometric method(NGM) in non-Hermitian systems is examined. By calculating the Chern number of two different systems(a square sample and a cylindrical one), the numerical results calculated by NGM are compared with the analytical one, and the phase boundary obtained by NGM is found to be in good agreement with the theoretical prediction. Then, we use NGM to investigate the evolution of the Chern number in non-Hermitian samples with the disorder effect. For the square sample, the stability of the non-Hermitian Chern insulator under disorder is confirmed. Significantly,we obtain a nontrivial topological phase induced by disorder. This phase is understood as the topological Anderson insulator in non-Hermitian systems. Finally, the disordered phase transition in the cylindrical sample is also investigated. The clean non-Hermitian cylindrical sample has three phases, and such samples show more phase transitions by varying the disorder strength:(1) the normal insulator phase to the gapless phase,(2) the normal insulator phase to the topological Anderson insulator phase, and(3) the gapless phase to the topological Anderson insulator phase.     

The robustness of the quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells

The quantum spin Hall effect(QSHE) was first realized in HgTe quantum wells(QWs),which remain the only known two-dimensional topological insulator so far.In this paper,we have systematically studied the effect of the thickness fluctuation of HgTe QWs on the QSHE.We start with the case of constant mass with random distributions,and reveal that the disordered system can be well described by a virtual uniform QW with an effective mass when the number of components is small.When the number is infinite and corresponds to the real fluctuation,we find that the QSHE is not only robust,but also can be generated by relatively strong fluctuation.Our results imply that the thickness fluctuation does not cause backscattering,and the QSHE is robust to it.