二维各向异性SSH模型的拓扑性质研究

二维Su-Schrieffer-Heeger(SSH)模型是在拓扑物理领域受到广泛研究的一种模型,具有许多独特的物理性质.它属于高阶拓扑绝缘体,在第二条和第三条能带间会产生具有连续谱束缚态(bound states in the continuum,BICs)性质的角态.本文首先介绍了二维SSH模型的拓扑性质,在此基础上论证了第二条和第三条能带何时会在整个布里渊区上产生能隙.随后,计算了模型的电荷极化分布和电荷密度分布,证明了当x方向上胞内跃迁几率和胞间跃迁几率较大时,x方向的边缘电荷极化激发了y方向的边缘态,反之亦然.同时,边缘电荷极化激发了角上的异常填充,产生了具有良好局域性与鲁棒性的拓扑角态.最后,构建了一种声学谐振腔模型,并证明了该模型可以较好的模拟各向异性二维SSH模型的拓扑性质.     

铁磁绝缘体间的极薄Bi2Se3薄膜的相变研究

研究一个极薄三维拓扑绝缘体Bi₂Se₃薄膜处于两个铁磁绝缘体层之间, 其铁磁层的磁化方向都处于竖直平面, 系统拓扑性质随磁化方向夹角的变化. 从表面态电子低能有效哈密顿量出发计算系统的Chern 数, 和运用一个具有Armchair边界的单层六角晶格带的紧束缚模型模拟系统的体能带和边缘态, 来确定系统所处的拓扑相. 发现两个铁磁层的磁化方式从平行转到反平行的某一临界角度, 系统经历从反常量子霍尔相到普通绝缘相的转变.     

基于复合蜂窝结构的宽带周期与非周期声拓扑绝缘体

具有良好可重构性、良好缺陷兼容性及紧凑型的声学拓扑结构可能成为声学发展中一个有前景的方向.本文设计了一种可调谐、应用于空气声的二维宽带复合蜂窝形晶格结构,其元胞拥有两个变量:一个是中心圆的缩放参数s,另一个是"花瓣"图案围绕其质心的旋转角度q.研究发现当s为1.2, q为±33°时,在结构的布里渊区中心点出现四重简并态.在±33°两侧,能带会发生反转,体系经历拓扑相变;同时,结构的相对带隙宽带逐渐增加,其中q为0°和60°时,相对带宽分别为0.39和0.33.本研究还计算了由这两种转角的声子晶体组成的拼合结构的投影能带,发现在其体带隙中存在着边界态并验证了此拓扑边界的缺陷免疫特性.最后通过变化s,构建了一种非周期性双狄拉克锥型的声拓扑绝缘体并验证了其缺陷免疫性.本研究的体系相对带宽显著超过已知体系,将为利用声拓扑边界的声波器件微型化打下良好的基础.     

二维Frenkel-Kontorova模型中六角对称结构的摩擦现象

基于二维 Frenkel-Kontorova 模型, 运用分子动力学模拟方法, 研究了具有六角对称结构的系统从 locked 态到 sliding 态的相变, 并数值分析了上层原子采用六角对称结构时, 系统的不同参数对静摩擦力F_s和动摩擦力F_c的影响. 关键词： 二维 Frenkel-Kontorova 模型 超润滑 分子动力学 摩擦     

单层二维量子自旋霍尔绝缘体1T'-WTe2研究进展

量子自旋霍尔效应通常存在于二维拓扑绝缘体中,其具有受拓扑保护的无耗散螺旋边界态. 2014年,理论预言单层1T’相过渡金属硫族化合物是一类新型的二维量子自旋霍尔绝缘体.其中,以单层1T’-WTe₂为代表的材料体系具有原子结构稳定、体带隙显著、拓扑性质易于调控等许多独特的优势,对低功耗自旋电子器件的发展具有重要的意义.本文总结了单层1T’-WTe₂在实验上的最新进展,包括基于分子束外延生长的材料制备,螺旋边界态的探测及其对磁场的响应,掺杂、应力等手段在单层1T’-WTe₂中诱导出的新奇量子物态等.也对单层1T’-WTe₂未来可能的应用前景进行了展望.     

声子晶体中的多重拓扑相

研究了圆环型波导依照蜂窝结构排列的声子晶体系统中的拓扑相变.利用晶格结构的点群对称性实现赝自旋,并在圆环中引入旋转气流来打破时间反演对称性.通过紧束缚近似模型计算的解析结果表明,没有引入气流时,调节几何参数,系统存在普通绝缘体和量子自旋霍尔效应绝缘体两个相;引入气流后,可以实现新的时间反演对称性破缺的量子自旋霍尔效应相,而增大气流强度,则可以实现量子反常霍尔效应相.这三个拓扑相可以通过自旋陈数来分类.通过有限元软件模拟了多个系统中边界态的传播,发现不同于量子自旋霍尔效应相,量子反常霍尔相系统的表面只支持一种自旋的边界态,并且它无需时间反演对称性保护.     

二维光子拓扑绝缘体研究进展

受凝聚态拓扑绝缘体研究的启发,整数量子霍尔效应、量子自旋霍尔效应、拓扑半金属、高阶拓扑绝缘体等拓扑物理相继在光学系统中实现。光子系统因能带干净,样品设计简单且制作精度高等优势,逐渐成为研究物理拓扑模型和新型拓扑效应的重要平台。拓扑光子学提供了全新的调控光场和操控光子的方法,其拓扑保护的边界态可实现光子对材料杂质缺陷免疫的传播,这种传统光子系统不具备的理想的传输态有望驱动新型光学集成器件的变革。本文将从二维光学体系出发,简要介绍几种典型的光拓扑绝缘体的最新进展,例如光整数量子霍尔效应、光量子自旋霍尔效应、光Floquet拓扑绝缘体、拓扑安德森绝缘体和高阶拓扑绝缘体。文中重点介绍了上述几种光拓扑绝缘体的拓扑模型及其新型的拓扑现象,并在最后展望了新型光学拓扑效应及其在光学器件中的应用前景。     

应变调控下Tl2Ta2O7中的拓扑相变

拓扑电子材料因为具有非平庸的拓扑态,所以会展现出许多奇异的物理性质.本文通过第一性原理计算对应变调控下的烧绿石三元氧化物Tl₂Ta₂O₇中的拓扑相变进行了研究.首先分析了原子轨道投影能带,发现体系费米能级附近O原子的(px+py)与pz轨道发生了能带反转,再构造了紧束缚模型计算得到体系的Z₂拓扑不变量确定了其拓扑非平庸性,最后研究了表面态等拓扑性质.研究发现未施加应变的Tl₂Ta₂O₇是一个在费米能级处具有二次能带交叉点的半金属,而平面内应变会破缺晶体对称性进而使体系发生拓扑相变.当对体系施加–1%的压缩应变时,它会转变为狄拉克半金属;当对体系施加1%的拉伸应变时,体系相变为拓扑绝缘体.本研究对于在三维材料中调控拓扑相变有着较重要的指导意义,并且为低能耗电子器件的设计提供了良好的材料平台.     

单轴压力下Ge2X2Te5(X=Sb,Bi)薄膜拓扑相变的第一性原理研究

随着拓扑绝缘体的发现, 材料拓扑物性的研究成为凝聚态物理研究的热点领域. 本文基于第一性原理计算, 研究了化合物Ge₂X₂Te₅ (X=Sb, Bi) 的块体结构和二维单层和双层薄膜结构的拓扑物性, 以及单双层薄膜在垂直方向单轴压力下的拓扑量子相变. 研究发现, A型原子序列排列的这两种化合物都是拓扑绝缘体, 其单层薄膜都是普通金属, 而双层薄膜都是拓扑金属, 单层和双层薄膜在单轴加压过程中都没有发生拓扑量子相变; 这两种化合物的B型原子序列的晶体是普通绝缘体, 其所对应的薄膜, Ge₂Sb₂Te₅单层是普通金属, 双层薄膜和Ge₂Bi₂Te₅的单层和双层薄膜均为普通绝缘体, 但是在单轴加压过程中B 型原子序列所对应的单层和双层薄膜都转变为拓扑金属.     

空间盘绕型声学超材料的亚波长拓扑谷自旋态

声子晶体的Dirac线性色散关系,使其具有奇特的声拓扑特性,在声波控制领域具有良好的应用前景.目前,声子晶体的拓扑边缘态主要基于Bragg散射所产生的能带结构,难以实现低频声波的受拓扑保护单向边缘传输.本文引入空间盘绕结构,设计了具有C_(3v)对称性的空间盘绕型声学超材料,并研究其布里渊区高对称点(K/K'点)的亚波长Dirac锥形线性色散.接着,通过旋转打破空间盘绕型声学超材料的镜像对称性,使其Dirac简并锥裂开而产生亚波长拓扑相变和亚波长拓扑谷自旋态.最后,采用拓扑相位互逆的声学超材料构造拓扑界面,实现声拓扑谷自旋传输.空间盘绕型声学超材料的亚波长Dirac线性色散与亚波长拓扑谷自旋态突破了声子拓扑绝缘体的几何尺寸限制,为声拓扑稳健传输在低频段的应用提供理论基础.     

Transport features of topological corner states in honeycomb lattice with multihollow structure

Higher-order topological phase in 2-dimensional (2D) systems is characterized by in-gap corner states, which are hard to detect and utilize. We numerically investigate transport properties of topological corner states in 2D honeycomb lattice, where the second-order topological phase is induced by an in-plane Zeeman field in the conventional Kane–Mele model. Through engineering multihollow structures with appropriate boundaries in honeycomb lattice, multiple corner states emerge, which greatly increases the probability to observe them. A typical two-probe setup is built to study the transport features of a diamond-shaped system with multihollow structures. Numerical results reveal the existence of global resonant states in bulk insulator, which corresponds to the resonant tunneling of multiple corner states and occupies the entire scattering region. Furthermore, based on the well separated energy levels of multiple corner states, a single-electron source is constructed.     

Transport induced dimer state from topological corner states

Recently, a new type of second-order topological insulator has been theoretically proposed by introducing an in-plane Zeeman field into the Kane-Mele model in the two-dimensional honeycomb lattice. A pair of topological corner states arise at the corners with obtuse angles of an isolated diamond-shaped flake. To probe the corner states, we study their transport properties by attaching two leads to the system. Dressed by incoming electrons, the dynamic corner state is very different from its static counterpart.Resonant tunneling through the dressed corner state can occur by tuning the in-plane Zeeman field. At the resonance, the pair of spatially well separated and highly localized corner states can form a dimer state, whose wavefunction extends almost the entire bulk of the diamond-shaped flake. By varying the Zeeman field strength, multiple resonant tunneling events are mediated by the same dimer state. This re-entrance effect can be understood by a simple model. These findings extend our understanding of dynamic aspects of the second-order topological corner states.     

Topological phases in Bi/Sb planar and buckled honeycomb monolayers

We investigate topological phases in two-dimensional Bi/Sb honeycomb crystals considering planar and buckled structures, both freestanding and deposited on a substrate. We use the multi-orbital tight-binding model and compare results with density functional theory calculations. We distinguish topological phases by calculating topological invariants, analyzing edge states properties of systems in a ribbon geometry and studying their entanglement spectra. We show that coupling to the substrate induces transition to the $Z_2$ topological insulator phase. It is observed that topological crystalline insulator (TCI) phase, found in planar crystals, exhibits an additional pair of edge states in both energy spectrum and entanglement spectrum. Transport calculations for TCI phase suggest robust quantized conductance even in the presence of crystal symmetry-breaking disorder.     

Higher-Order Topological Spin Hall Effect of Sound

We theoretically propose a reconfigurable two-dimensional(2 D) hexagonal sonic crystal with higher-order topology protected by the six-fold,C_6,rotation symmetry.The acoustic band gap and band topology can be controlled by rotating the triangular scatterers in each unit cell.In the nontrivial phase,the sonic crystal realizes the topological spin Hall effect in a higher-order fashion:(i) the edge states emerging in the bulk band gap exhibit partial spin-momentum correlation and are gapped due to the reduced spatial symmetry at the edges.(ii) The gapped edge states,on the other hand,stabilize the topological corner states emerging in the edge band gap.The partial spin-momentum correlation is manifested as pseudo-spin-polarization of edge states away from the time-reversal invariant momenta,where the pseudospin is emulated by the acoustic orbital angular momentum.We reveal the underlying topological mechanism using a corner topological index based on the symmetry representation of the acoustic Bloch bands.     

二维声子晶体中简单旋转操作导致的拓扑相变

构建了一种简单的二维声子晶体:由两个横截面为三角形的钢柱所组成的复式元胞按三角点阵的形式排列在空气中,等效地形成了一个蜂巢点阵结构.当三角形钢柱的取向与三角点阵的高对称方向一致时,整个体系具有C_(6v)对称性.研究发现:在保持钢柱填充率不变的条件下,只需要将所有三角柱绕着自己的中心旋转180°,就可实现二重简并的p态和d态在布里渊区中心Γ点处的频率反转,且该能带反转过程实质上是一个拓扑相变过程.通过利用Γ点的P态和d态的空间旋转对称性,构造了一个赝时反演对称性,并在声学系统中实现了类似于电子系统中量子自旋霍尔效应的赝自旋态.随后通过k·p微扰法导出了Γ点附近的有效哈密顿量,并分别计算了拓扑平庸和非平庸系统的自旋陈数,揭示了能带反转和拓扑相变的内在联系.最后通过数值模拟演示了受到拓扑不变量保护的声波边界态的单向传输行为和对缺陷的背向散射抑制.文中所研究的声波体系,尽管材料普通常见,但其拓扑带隙的相对宽度超过21%,比已报道的类似体系的带隙都要宽,且工作原理涵盖从次声波到超声波的很大频率范围,从而在实际应用上具有较大的优势和潜力.     

Topological Dirac surface states in ternary compounds GeBi2Te4, SnBi2Te4 and Sn0.571Bi2.286Se4

Using high-resolution angle-resolved and time-resolved photoemission spectroscopy, we have studied the low-energy band structures in occupied and unoccupied states of three ternary compounds GeBi₂Te₄, SnBi₂Te₄ and Sn_0.571Bi_2.286Se₄ near the Fermi level. In previously confirmed topological insulator GeBi₂Te₄ compounds, we confirmed the existence of the Dirac surface state and found that the bulk energy gap is much larger than that in the first-principles calculations. In SnBi₂Te₄ compounds, the Dirac surface state was observed, consistent with the first-principles calculations, indicating that it is a topological insulator. The experimental detected bulk gap is a little bit larger than that in calculations. In Sn_0.571Bi_2.286Se₄ compounds, our measurements suggest that this nonstoichiometric compound is a topological insulator although the stoichiometric SnBi₂Se₄ compound was proposed to be topological trivial.     

A computational investigation of topological insulator Bi2Se3 film

Topological insulators have a bulk band gap like an ordinary insulator and conducting states on their edge or surface which are formed by spin–orbit coupling and protected by time-reversal symmetry. We report theoretical analyses of the electronic properties of three-dimensional topological insulator Bi₂Se₃ film on different energies. We choose five different energies (–123, –75, 0, 180, 350 meV) around the Dirac cone (–113 meV). When energy is close to the Dirac cone, the properties of wave function match the topological insulator’s hallmark perfectly. When energy is far way from the Dirac cone, the hallmark of topological insulator is broken and the helical states disappear. The electronic properties of helical states are dug out from the calculation results. The spin-momentum locking of the helical states are confirmed. A 3-fold symmetry of the helical states in Brillouin zone is also revealed. The penetration depth of the helical states is two quintuple layers which can be identified from layer projection. The charge contribution on each quintuple layer depends on the energy, and has completely different behavior along K and M direction in Brillouin zone. From orbital projection, we can find that the maximum charge contribution of the helical states is p_z orbit and the charge contribution on p_yand p_x orbits have 2-fold symmetry.