Rssler混沌系统的追踪控制与同步

对R ssler混沌系统进行控制 ,使之追踪任意参考信号 ,讨论了该控制系统的自同步以及与Lorenz混沌系统的异结构混沌同步问题 ,并利用Lyapunov方法证明了该控制系统指数收敛到参考信号 .数值仿真进一步表明该方法的有效性     

Rssler混沌系统的追踪控制

基于离散线性系统的稳定性理论,提出了Rssler混沌系统的一种追踪控制方案,实现了Rssler系统对任意给定参考信号的追踪,并且在理论上证明这种控制方案是按指数收敛的.数值仿真表明,该控制方案不仅可以对给定参考信号进行追踪,而且响应系统可以与驱动系统(同结构、异结构均可)同步.     

R(o)ssler混沌系统的追踪控制

基于离散线性系统的稳定性理论,提出了R(o)ssler混沌系统的一种追踪控制方案,实现了Rossler系统对任意给定参考信号的追踪,并且在理论上证明这种控制方案是按指数收敛的.数值仿真表明,该控制方案不仅可以对给定参考信号进行追踪,而且响应系统可以与驱动系统(同结构、异结构均可)同步.     

Hénon混沌系统的追踪控制与同步

基于离散线性系统的稳定性理论,实现了Hénon混沌系统对参考信号的追踪控制.讨论了系统的同步问题,给出了“异结构混沌同步”的新概念.数值仿真表明了本文方法的有效性 关键词： Hénon混沌系统 追踪控制 混沌同步     

复杂Dynamos混沌系统的追踪控制与同步

基于系统稳定性理论,设计合适的新型非线性反馈控制器,实现复杂Dynamos混沌系统的状态向量与任意给定的不同参考信号追踪广义投影同步.以追踪控制超混沌系统、混沌系统、正弦余弦信号以及不动点为例,通过改变比例因子,可以获得多个不同混沌系统之间的异结构广义投影同步以及与正弦波形的广义同步,或者将复杂Dynamos混沌系统控制到期望的平衡点.数值仿真进一步表明了该方法的有效性. 关键词： 复杂Dynamos混沌系统 追踪控制 广义投影同步 平衡点     

单向耦合网络连接的Lorenz系统的追踪控制

基于Lyapunov稳定性理论，将单个Lorenz系统的一种追踪控制方案用于单向耦合网络连接的Lorenz系统. 只对网络系统的一个节点加入控制器，就实现了单向耦合网络连接的Lorenz系统的单个输出变量对任意给定参考信号的追踪. 数值仿真表明，当网络的耦合强度足够大时，可以实现包括同结构和异结构系统信号之间的有效追踪. 关键词： Lorenz混沌系统 复杂动态网络 追踪控制 单向耦合     

复杂Dynamos混沌系统的追踪控制与同步

基于系统稳定性理论，设计合适的新型非线性反馈控制器，实现复杂Dynamos混沌系统的状态向量与任意给定的不同参考信号追踪广义投影同步.以追踪控制超混沌系统、混沌系统、正弦余弦信号以及不动点为例，通过改变比例因子，可以获得多个不同混沌系统之间的异结构广义投影同步以及与正弦波形的广义同步，或者将复杂Dynamos混沌系统控制到期望的平衡点.数值仿真进一步表明了该方法的有效性.     

Roessler混沌系统的追踪控制

基于离散线性系统的稳定性理论,提出了Roessler混沌系统的一种追踪控制方案,实现了Roessler系统对任意给定参考信号的追踪,并且在理论上证明这种控制方案是按指数收敛的.数值仿真表明,该控制方案不仅可以对给定参考信号进行追踪,而且响应系统可以与驱动系统（同结构、异结构均可）同步.     

Lorenz混沌系统的参数辨识与控制

把观测器思想用于系统中未知参数的辨识,对Lorenz混沌系统中的未知参数进行了辨识研究,提出未知参数辨识观测器的概念,数值结果表明若未知参数为常数或缓慢变化的信号本文方法都能给出很好的辨识结果.随后,把辨识和控制问题综合起来考虑,提出改进Lorenz混沌的控制方法,数值仿真表明了该方法的有效性 关键词： Lorenz混沌系统 参数辨识 非线性反馈控制     

单模激光Lorenz系统与3D混沌系统之间的混沌同步

研究了异结构混沌系统之间的同步控制问题.采用非线性反馈控制方法实现了3D混沌系统和单模激光Lorenz混沌系统之间的混沌同步.根据系统的稳定性理论,得到了非线性反馈控制器的结构和反馈控制增益的取值范围.仿真模拟的结果表明:目标系统和响应系统达到完全同步,两系统状态变量随时间的演化轨迹完全一致,并且误差变量经过短暂的时间序列以后始终平稳地趋于零.仿真模拟的结果证明了这种方法的有效性.     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.     

ErP5O14非晶玻璃的红外量子剪裁

研究了Er_1.0P₅O₁₄铒非晶玻璃的红外量子剪裁现象. 从吸收谱和激发光谱的计算比较中肯定了Er_1.0P₅O₁₄非晶 玻璃的1537.0 nm红外荧光为多光子量子剪裁荧光. 从Er_1.0P₅O₁₄非晶玻璃的可见和红外荧光发射光谱中发现激发²H_11/2, ⁴G_11/2和⁴G_9/2能级所导致的⁴I_13/2→⁴I_15/2量子剪裁红外荧光很强;基于自发辐射速率、无辐射弛豫速率和能量传递速率等参数的计算,对其量子剪裁机理进行了分析.发现起源于基态的强下转换能量传递{²H_11/2→⁴I_9/2,⁴I_15/2→⁴I_13/2},{⁴G_11/2→⁴I_13/2, ⁴I_15/2→²H_11/2},{⁴G_9/2→⁴F_7/2,⁴I_15/2→⁴I_13/2}和{⁴G_9/2→⁴I_13/2, ⁴I_15/2→²H_11/2}是导致Er_1.0P₅O₁₄非晶玻璃具有强的三光子和四光子量子剪裁红外荧光的原因.研究结果对改善太阳能电池效率有一定意义.