MM-4中电位和分布实验

本文描述了用静电探针测量探针悬浮电位的方法,给出了MM-4电位分布的实验结果。结果表明,轴向电位分布不对称;在等离子体中沿轴向和径向存在双离子位阱。在离子能谱测量中观察到双离子温度。产生这样电位分布的机制,归于会切系统中的斯托沫区和电子枪的不同工作方式。测量的等离子体电位为-200——300V。     

氧化铝基片上沉积金刚石薄膜的Raman光谱分析

分别采用微波等离子体化学汽相沉积法和热丝化学汽相沉积法在氧化铝陶瓷基片上沉积金刚石薄膜．通过谱线拟合，定量比较了不同沉积方法、不同基片上沉积金刚石薄膜的质量，计算了沉积膜的结构完整性及沉积层的应变，其结果与X射线衍射的结果符合良好 关键词：     

用发射探针降落法测量等离子体空间电位

介绍了一种用发射探针测量等离子体空间电位的方法——“降落法”,并利用这种方法测量了双共振腔ECR微波等离子体源的空间电位分布,从中得到该等离子体内部的一些电场信息。给出了不同微波功率和不同压强下Ar等离子体空间电位的分布情况。     

金刚石膜合成条件下的鞘层与等离子体参数分布

本文报导了在用热阴极直流放电等离子体化学气相沉积（通常也称ＥＡＣＶＤ．即电子辅助化学气相沉积）方法合成金刚石的条件下的等离子体密度、电子温度、等离子体空间电位分布及基片附近等离子体鞘结构，并讨论其对成膜的影响．     

光溅射镀膜均匀性的优化模拟

为了改善脉冲激光溅射沉积大面积薄膜的均匀性,发展了基片离轴旋转的扫描技术.根据基片离轴旋转的基本原理和等离子体羽空间余弦分布规律,建立了径向膜厚分布公式.数值模拟了各种因素对基片离轴旋转扫描沉积薄膜均匀性的影响.分析表明,优化粒子束中心与基片中心偏置距离、溅射点与基片的距离是改善基片离轴旋转扫描镀膜均匀性的主要途径.同时也考虑了电机转速、镀膜时间和激光重频的影响.通过参量优化,当均匀度要求在95％时,计算得到薄膜的最大半径超过40 mm.     

光溅射镀膜均匀性的优化模拟

为了改善脉冲激光溅射沉积大面积薄膜的均匀性,发展了基片离轴旋转的扫描技术.根据基片离轴旋转的基本原理和等离子体羽空间余弦分布规律,建立了径向膜厚分布公式.数值模拟了各种因素对基片离轴旋转扫描沉积薄膜均匀性的影响.分析表明,优化粒子束中心与基片中心偏置距离、溅射点与基片的距离是改善基片离轴旋转扫描镀膜均匀性的主要途径.同时也考虑了电机转速、镀膜时间和激光重频的影响.通过参量优化,当均匀度要求在95%时,计算得到薄膜的最大半径超过40mm.     

航天器背面接地介质材料等离子体充电研究北大核心CSCD

处于等离子体环境中的航天器的介质材料受到带电粒子的作用,表面将产生电位。对背面接地的介质材料,上表面将与接地背面形成电势差。当电势差达到一定阈值时将产生放电,表面充电电位对充放电效应影响至关重要。综合考虑等离子体中粒子的质量、温度及密度,介质材料的二次电子效应,体电流泄漏以及介质材料的运行速度等因素,基于气体动理论,利用粒子的麦克斯韦速度分布函数理论推导得出等离子体环境中背面接地介质材料表面充电电位一般表达式。讨论了地球同步轨道环境下,表面电位与等离子体环境及材料表面电阻等各个参数的关系,总结出等离子环境背面接地介质材料表面充电规律,为航天器介质材料静电防护设计提供一定的理论基础。     

天器背面接地介质材料等离子体充电研究

处于等离子体环境中的航天器的介质材料受到带电粒子的作用,表面将产生电位。对背面接地的介质材料,上表面将与接地背面形成电势差。当电势差达到一定阈值时将产生放电,表面充电电位对充放电效应影响至关重要。综合考虑等离子体中粒子的质量、温度及密度,介质材料的二次电子效应,体电流泄漏以及介质材料的运行速度等因素,基于气体动理论,利用粒子的麦克斯韦速度分布函数理论推导得出等离子体环境中背面接地介质材料表面充电电位一般表达式。讨论了地球同步轨道环境下,表面电位与等离子体环境及材料表面电阻等各个参数的关系,总结出等离子环境背面接地介质材料表面充电规律,为航天器介质材料静电防护设计提供一定的理论基础。     

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采用波长532nm的高能脉冲激光束照射40.68MHz激发的容性耦合氧等离子体,并给处于激光束中央的探针施加一定的正偏压,由此诊断氧等离子体的空间电位和电负度.实验结果表明,探针偏压从0V逐渐增加时,探针搜集的电流波形从V型向倒U型转变,转变电压点正是电负性等离子体的空间电位.尝试着给出了运用激光诱导光致剥离技术诊断电负性等离子体空间电位的经验方法.另外,探针上施加的正偏压高于等离子体空间电位时,等离子体的电负度基本保持不变.实验还表明,氧等离子体的电负度随着射频输入功率的增加而呈现下降的趋势.     

容性耦合电负性氧等离子体的激光诱导光致剥离技术诊断研究

采用波长532nm的高能脉冲激光束照射40.68MHz激发的容性耦合氧等离子体,并给处于激光束中央的探针施加一定的正偏压,由此诊断氧等离子体的空间电位和电负度。实验结果表明,探针偏压从0V逐渐增加时,探针搜集的电流波形从V型向倒U型转变,转变电压点正是电负性等离子体的空间电位。尝试着给出了运用激光诱导光致剥离技术诊断电负性等离子体空间电位的经验方法。另外,探针上施加的正偏压高于等离子体空间电位时,等离子体的电负度基本保持不变。实验还表明,氧等离子体的电负度随着射频输入功率的增加而呈现下降的趋势。     

Langmuir Probe Measurements in a Grid-Assisted Magnetron Sputtering System

The grid-assisted magnetron sputtering is a variation of the magnetron sputtering commonly used for thin film deposition. In this work, Langmuir probe measurements were performed in such a system by using the grid under two basic and practical electrical conditions, i.e., floating and grounded. The results show that grounding the grid leads to an enhancement of the plasma confinement and to increases in both floating and plasma potential, as inferred from the probe characteristics. The grounded grid drains electrons from the plasma, acting as an auxiliary anode and reducing the plasma diffusion toward the chamber walls. For the same discharge current, the improved confinement results in a lower electron temperature when compared to floating condition, although the electron densities are comparable in both cases.     

Argon-dominated plasma beam generated by filtered vacuum arc and its substrate etching

A new technique to etch a substrate as a pre-treatment prior to functional film deposition was developed using a filtered vacuum arc plasma. An Ar-dominated plasma beam was generated from filtered carbon arc plasma by introducing appropriate flow rate of Ar gas in a T-shape filtered arc deposition (T-FAD) system. The radiation spectra emitted from the filtered plasma beam in front of a substrate table were measured. The substrate was etched by the Ar-dominated plasma beam. The principal results are summarized as follows. At a high flow rate of Ar gas (50 ml/min), when the bias was applied to the substrate, the plasma was attracted toward the substrate table and the substrate was well etched without film formation on the substrate. Super hard alloy (WC), bearing steel (SUJ2), and Si wafer were etched by the Ar-dominated plasma beam. The etching rate was dependent on the kind of substrate. The roughness of the substrate increased, when the etching rate was high. A pulse bias etched the substrate without roughening the substrate surface excessively.     

Experimental observations of steady anodic vacuum arcs withthermionic cathodes

Stationary plasma discharges have been investigated in a high vacuum ambient (background gas pressure <10^-2 Pa), with an externally heated cathode and a consumable hot evaporating anode. With various anode materials like chromium or copper, and electrode separations between 0.5 and 3 mm, the nonself-sustained discharge operates with DC arc currents in the range of 220 A. The waveform of the arc voltage is strongly influenced by the magnetic field of the cathode heating current, and arc voltages between a minimum of 3 V and a maximum exceeding 100 V have been observed. The voltage-current characteristics (V_CC) and the influence of the electrode separation have been measured separately for the minimum and the maximum of the arc voltages and show a different behavior. The metal plasma expands into the ambient vacuum toward the walls of the vacuum vessel and offers a macroparticle free deposition source of thin films. The arc voltage can be varied by external manipulations of the arc discharge, and the mean ion energy of the expanding metal plasma shows a linear dependence of the mean arc voltage     

Influence of APS bias voltage on properties of HfO_2 and SiO_2 single layer deposited by plasma ion-assisted deposition

HfO2 and SiO2 single layer is deposited on glass substrate with plasma ion assistance provided by Leybold advanced plasma source (APS). The deposition is performed with a bias voltage in the range of 70-130 V for HfO2, and 70-170 V for SiO2. Optical, structural, mechanical properties, as well as absorption and laser induced damage threshold at 1064 nm of HfO2 and SiO2 single layer deposited with the plasma ion assistance are systematically investigated. With the increase of APS bias voltage, coatings with higher refractive index, reduced surface roughness, and higher laser-induced damage threshold (LIDT) are obtained, and no significant change of the absorption at 1064 nm is observed. For HfO2, a bias voltage can be identified to achieve coatings without any stress. However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT. The bias voltage can be properly identified to achieve coatings with desired properties.     

On the determination of energy fluxes at plasma–surface processes

A summary is given of different methods for the determination of the energy influx and its influence on the thermal balance and energetic conditions of substrate surfaces during plasma processing. The discussed mechanisms include heat radiation and kinetic and potential energy of charged particles and sputtered neutrals. For a few examples such as magnetron sputtering of a-C:H films, sputter deposition of aluminum on microparticles, and titanium deposition in a hollow-cathode arc evaporation device the energetic balance of substrates during plasma processing is presented. Received: 6 July 2000 / Accepted: 12 December 2000 / Published online: 3 April 2001     

带状真空电弧磁过滤器等离子体分布特性及制备类金刚石膜研究

采用大尺寸矩形石墨靶作为真空阴极电弧源, 研制了带状真空电弧磁过滤器. 使用法拉第杯和朗缪尔探针对90 ℃弯曲磁过滤器中的带状等离子体出口所在平面的15个区域的离子能量和密度进行了测试; 用该带状真空电弧磁过滤器制备了类金刚石膜(diamond-like carbon, DLC); 对相应位置上的类金刚石膜进行了Raman分析和膜厚测量. 结果表明: 磁过滤器出口所在平面的15个划分区域中离子能量分布接近麦克斯韦分布, 离子能量分布与类金刚石膜的结构具有明显的对应特征, 离子密度分布与DLC膜膜厚分布相互之间具有相关性.     

Characterization of Ti-Zr-N films deposited by cathodic vacuum arc with different substrate bias

Ti-Zr-N (multi-phase) films were prepared by cathodic vacuum arc technique with different substrate bias (0 to −500 V), using Ti and Zr plasma flows in residual N₂ atmosphere. It was found that the microstructure and mechanical properties of the composite films are strongly dependent on the deposition parameters. All the films studied in this paper are composed of ZrN, TiN, and TiZrN ternary phases. The grains change from equiaxial to columnar and exhibit preferred orientation as a function of substrate bias. With the increase of substrate bias the atomic ratio of Ti to Zr elements keeps almost constant, while the N to (Ti + Zr) ratio increases to about 1.1. The composite films present an enhanced nanohardness compared with the binary TiN and ZrN films deposited under the same condition. The film deposited with bias of −300 V possesses the maximum scratch critical load (L_c).     

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利用在线椭偏仪对非晶碳氢膜进行了光学常数、沉积率和刻蚀率的测量。在无直流负偏压或偏压较小时,薄膜呈现聚合物结构,折射率和消光系数较小;当增加直流负偏压时,薄膜的折射率和消光系数显著提高,所成膜为硬质非晶碳氢膜。在以CH4作为气源进行沉积时,随着偏压的增加,沉积率先升高再降低,在偏压为-100V时,沉积率为最大。H2/N2(30%N2)的混合气体的刻蚀率要比单独用H2作为刻蚀气体的刻蚀率要大。对于CH4/N2(30%N2),在偏压从0V增加到300V过程中,在大约50V时,基底上的薄膜有一个从沉积到刻蚀的转化过程。     

Plasma deposition of thin films utilizing the anodic vacuum arc

Anodic vacuum arcs operating with cold cathodes in the spot mode and hot evaporating anodes are investigated to explore their technical potential as a plasma deposition technique. This discharge provides a unique source of a highly ionized, metal vapor plasma by autogeneration of the working gas to evaporation of the anode. This gas-free and droplet-free metal vapor plasma expands into the ambient vacuum (10^-4 mbar) and produces thin metallic films at the surface of substrates. An analysis of Al and Cu plasmas at the position of a possible substrate for arc currents between 20 and 200 A leads to the following results: electron densities, 10¹⁵-10¹⁸/ m³; degree of ionization, 0.5-25%; directed ion energy, 5 eV; and electron temperatures, 0.2-1 eV. Metallic coatings generated with deposition rates between 0.1 and 100 nm/s show the following properties: purity, 99.9%; polycrystalline structure with grain sizes between a few and a few hundred nm, same mass density as the respective bulk material, electrical conductivity rather close to that of the bulk material, and excellent optical properties. The coatings show good adhesion, which can be enhanced by a plasma-supported pretreatment of the substrate surface and by an acceleration of the ions towards the substrate     

微晶硅薄膜沉积过程中的等离子体光学与电学特性研究

采用空间分辨光发射谱和傅里叶变换功率阻抗分析仪研究了衬底偏压和辉光功率对微晶硅薄膜沉积过程中的等离子体光学与电学特性的影响.研究表明：在交流偏压(AC)、悬浮(floating)、负直流加交流(-DC＋AC)偏压下,Hα发射强度空间分布规律相似,平均鞘层长度相等;正直流加交流(＋DC＋AC)偏压和接地(grounded)时Hα发射强度显著增强,并存在双峰(double layers)现象.增大功率,Hα发射强度也随着增大,并在17W与22W之间产生跳变.电学测试发现功率增大,等离子体电阻降低,电抗降低,电 关键词： 等离子体 光发射谱 衬底偏压 辉光功率