Argon-dominated plasma beam generated by filtered vacuum arc and its substrate etching |
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Authors: | Hideto Tanoue Shinichiro Oke Hirofumi Takikawa Yushi Hasegawa Masao Kumagai Takeshi Ishikawa |
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Institution: | a Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi 441-8580, Japan b Itoh Optical Industrial Co., Ltd., 3-19 Miyanari, Gamagori, Aichi 443-0041, Japan c Onward Ceramic Coating Co., Ltd., Wa-13 Yoshihara, Nomi, Ishikawa 929-0111, Japan d Kanagawa Industrial Technology Research Center, 705-1, Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan e Hitachi Tool Engineering, Ltd., 13-2, Ninomi, Narita, Chiba 286-0825, Japan f Industrial Research Institute of Ishikawa, 2-1, Kuratsuki, Kanazawa, Ishikawa 929-8203, Japan |
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Abstract: | A new technique to etch a substrate as a pre-treatment prior to functional film deposition was developed using a filtered vacuum arc plasma. An Ar-dominated plasma beam was generated from filtered carbon arc plasma by introducing appropriate flow rate of Ar gas in a T-shape filtered arc deposition (T-FAD) system. The radiation spectra emitted from the filtered plasma beam in front of a substrate table were measured. The substrate was etched by the Ar-dominated plasma beam. The principal results are summarized as follows. At a high flow rate of Ar gas (50 ml/min), when the bias was applied to the substrate, the plasma was attracted toward the substrate table and the substrate was well etched without film formation on the substrate. Super hard alloy (WC), bearing steel (SUJ2), and Si wafer were etched by the Ar-dominated plasma beam. The etching rate was dependent on the kind of substrate. The roughness of the substrate increased, when the etching rate was high. A pulse bias etched the substrate without roughening the substrate surface excessively. |
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Keywords: | T-shape filtered arc deposition (T-FAD) system Carbon vacuum arc Ar-dominated plasma beam Substrate etching DLC film |
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