石墨和纳米碳中缺陷和电子密度随温度的变化

测量了石墨和纳米碳在不同温度下的正电子寿命谱,研究了石墨和纳米碳中缺陷和电子密度随温度的变化.结果表明,纳米碳中缺陷的开空间和缺陷浓度分别大于和高于石墨晶体;纳米碳的平均自由电子密度低于石墨晶体.当温度从25K升至295K时,石墨和纳米碳中的平均自由电子密度随温度的升高而下降:石墨晶体中的自由电子密度随温度的升高变化较小;纳米碳的自由电子密度随温度的升高变化较大.随着温度的升高,石墨和纳米碳中的热空位数量增多,而且这些空位可迁移至微孔洞的内表面使微孔洞的开空间增大.     

液态结构与性质关系Ⅱ——Mg-9Al熔体的运动黏度及与熔体微观结构的关系

采用坩埚扭摆振动法测量Mg-9Al熔体的运动黏度,得到890—1190 K温区内高精度的黏度-温度关系曲线ν(T),发现升温过程中黏度随温度升高发生异常变化,当温度升高至1000—1075 K时,黏度由快速增大转变为逐渐减小,即发生转折变化;在随后的降温和第二次升温过程中,黏度随温度变化呈指数规律单调递增(减),符合Arrhenius方程式.在实验研究基础上,采用剩余键结构模型和"平均原子集团"演变行为的计算模型讨论Mg-9Al熔体的黏度与微观结构之间的相关性,结果表明:类关键词： 合金熔体 结构与黏度相关性 剩余键结构 平均原子集团模型     

脉冲驱动氩气真空介质阻挡放电的光谱特性研究

通过自主设计正极性Marx纳秒脉冲电源,在不同放电频率、不同电源电压幅值下,采用发射光谱在真空环境下对氩气放电时的电子激发温度和电子密度进行测量计算。通过双谱线法选取合适的Ar原子谱线,求得电子激发温度在1 550～3 400 K之间,在正极性脉冲电源做电压源,且电源电压一定时,电子激发温度随着电源频率的升高而呈现上升趋势,在电源频率一定时,电子激发温度也随着电源电压的增加而升高。依据Stark展宽原理对真空体积介质阻挡放电时的电子密度进行了测量计算。电子密度的数量级可达10¹³ m^-3,当电源电压不变时,电子密度随电源频率的增加呈现上升趋势,当电源频率不变,电子密度随着电源电压的升高也逐渐提升。     

Tb0.3Dy0.7(Fe1-xAlx)1.95合金的自旋重取向和穆斯堡尔

系统研究了室温和77K温度时Tb0.3Dy0.7(Fe1-xAlx)1.95(x=0,0.05,0.1,0.15,0.2,0.25,0.3,0.35)合金中金属Al替代Fe对自旋重取向和穆斯堡尔谱的影响. 结果发现,Tb0.3Dy0.7(Fe1-xAlx)1.95合金的易磁化方向随成分和温度在{110}面逐渐偏离了立方晶体的主对称轴,即自旋重取向. 室温下,当x=0.15时,Tb0.3Dy0.7(Fe1-xAlx)1.95合金中出现了少量非磁性相;x>0.15时,合金完全呈顺磁性;而77K温度下,x=0.2时合金仍然呈磁性相. 在室温和77K温度时,超精细场Hhf均随Al元素的增加而减小,而同质异能移IS随Al元素的增加而增加,四极劈裂QS随Al含量呈无规律的变化.     

喷射器临界背压对喷射制冷系统性能的影响

为了确保喷射器在良好的工况条件下运行,文中针对太阳能喷射制冷系统的工况范围,以R134 a为工质建立了喷射器运行特性计算模型,计算分析了临界背压随喷射器运行工况的变化关系,以及对制冷系统性能的影响。结果表明:喷射器的临界背压随发生温度和蒸发温度的增大而增大,极限喷射系数随发生温度的升高而降低,随蒸发温度的升高而升高;喷射制冷系统COP随喷射器背压(冷凝压力)的升高先保持不变后减小,当Tg=353K,Te=281K和Te=283K时,喷射器分别在Tc=307K左右和Tc=308K左右时,达到临界状态,临界背压分别为0.85MPa、0.88MPa,COP分别为0.2和0.227。     

透镜到靶材的距离对脉冲激光诱导等离子体的影响机理研究

采用高功率抽运调Q激光器分别在真空和空气中烧蚀Ti-Al合金靶材激发等离子体,研究了在不同气体压强下透镜到靶材的距离对等离子体参数的影响机理对于焦距为111mm的聚焦透镜,当透镜到靶材距离小于透镜焦距时,随着距离逐渐接近焦距,真空和空气中电子温度、电子密度和谱线强度均逐渐增强.当透镜到靶材距离大于透镜焦距时,真空中,电子温度和电子密度仍然继续升高,而谱线强度却变化不大.空气中,等离子体参数却有不同的演化特性:等离子体的电子温度、电子密度和谱线强度在透镜到靶材距离为107 mm时达到最大值,当距离继续增大时,均呈现出迅速下降的趋势,当透镜到靶材距离大于112mm时,电子温度和电子密度又有明显上升,特征谱线强度却大幅下降.     

熔融过程中升温和降温对Al特征谱线的影响

为了解决LIBS技术应用于冶金过程成分分析时,温度变化导致测量精度低,重复性差的问题,就温度变化对等离子体的影响进行研究。以Al元素为研究对象,对比分析不同温度下的光谱强度、等离子体电子温度和电子密度,总结了温度上升和下降时光谱强度和等离子体特征参数的变化规律。结果表明,Al元素特征谱线强度随温度上升呈增大趋势,在700 ℃时达到饱和,等离子体特征参数变化趋势与谱线强度基本一致,当样品温度加热至700 ℃时,等离子体电子温度上升至13 122 K,电子密度增大至4.65×1016 cm-3;与温度上升相比,温度下降过程中,等离子体光谱强度,电子温度和电子密度的变化总体分为三个阶段。第一阶段,样品停止加热自然冷却,光谱强度、电子温度和电子密度随样品温度迅速下降;第二阶段,当样品温度下降至660 ℃左右时,光谱强度下降速度变缓,并趋于平稳,此时等离子体电子温度稳定在16 000 K左右,电子密度为7.6×1016 cm-3;第三阶段,光谱强度及等离子体特征参数持续下降,直至样品温度下降至室温。由此可见,将LIBS技术应用于熔融金属成分检测时,可以通过控制样品温度,获取最佳的测量点,进而提高LIBS技术的检测准确性。     

液相隔膜辉光放电等离子体自由基发射光谱研究

为了更好了解液相隔膜辉光放电等离子体引发的化学反应机理,运用发射光谱法研究了稀硫酸溶液隔膜辉光放电等离子体产生的自由基,估算了电子温度与电子密度。结果表明：当电压超过700 V时,观察到了羟基自由基和氢原子的发射光谱;当电压超过750 V时,除了羟基自由基和氢原子外,还观察到了氧原子的发射光谱;这些自由基的发射强度随电压升高而升高;稀硫酸溶液隔膜辉光放电等离子体的平均电子温度与平均电子密度分别为1.3×104 K与7.8×1017 cm-3。     

钙钛矿锰氧化物La_(2/3)Sr_(1/3)Fe_xMn_(1-x)O_3的结构与磁性研究

本文利用溶胶-凝胶法制备了名义成分为La_(2/3)Sr_(1/3)Fe_xMn_(1-x)O_3(x=0.0,0.1,0.2,0.3,0.5)的系列样品,样品先后经过773,873,1073 K热处理,热处理时采用缓慢升温方式,X射线衍射分析表明,该系列样品均为单相钙钛矿结构,空间群为R3c,利用X'Pert HighScore Plus软件计算了样品的晶粒尺寸、晶格常数、晶胞体积及键长、键角,利用物理性能测量系统测量了样品的磁性,发现样品在10K的磁矩随掺杂量的增加而减小,但存在两个明显不同的变化区域:从x=0到x=0.2时,平均每个分子的磁矩从2.72μB迅速下降到0.33μB,居里温度从327 K下降到95 K,下降了232 K;而从x=0.2到x=0.5时,平均每个分子的磁矩从0.33μB缓慢下降到0.05μB,居里温度从95K下降到46K,只下降了49K,我们认为Fe与Mn离子磁矩反平行是样品磁矩随Fe掺杂量增加而下降的原因之一。     

Sm_2(TM)_17合金的磁性(自旋再取向相变)研究

本文研究了Sm_2(FeNiCoM)_(17)合金(M为非磁性组元)的磁性。样品由六角结构无序型的2∶17主相及少量FeNi合金杂相组成。在六角结构的e轴方向(易磁化方向)观察到下述异常现象:低温(273K以下)时的磁化及反磁化曲线发生明显的跃变,跃变时相应的磁场H_r随温度下降而增大;磁滞迴线是蜂腰型的,温度愈低蜂腰愈明显;升温时磁化强度随温度变化(1.5K至居里点T_C)的曲线上出现极大值,其相应的温度T_t随磁场增大而降低;降温时观察到了热磁滞后现象。但在基面(难磁化方向)上及Co含量增多(>18at％)时,样品却表现了正常的铁磁行为。本文提出用磁矩非共线结构排列的自旋再取向相变来解释上述异常现象,并给出自旋倒向所需越过的能垒高度U=9.2×10~(-15)erg,用设想磁结构的模型得到的磁化强度的计算值与实验值也符合得较好。     

高功率微波及材料特性参数对沿面击穿的影响

为研究高功率微波及材料特性参数对介质沿面闪络击穿过程的影响,采用自编的1D3V PIC-MCC程序,通过粒子模拟手段,得到了电子与离子数目、电子及离子密度分布、空间电荷场时空分布、电子平均能量、放电功率、表面沉积功率、激发电离损耗功率、电离频率等重要物理量。结果表明:电离频率随场强增加而增加,达到饱和后缓慢下降,强场诱发的二次电子数目更多导致本底沉积功率增高;电离频率随频率减小而增加,达到饱和后缓慢下降,频率太高会抑制次级电子倍增;因此,低频强场下击穿压力较大;反射引发表面电场下降及磁场增加效应,降低表面场强虽使表面击穿压力下降,但磁场的增加会导致二次电子倍增起振时间缩短,且会增加器件内部击穿风险;圆极化相对线极化诱导二次电子数目更多、本底沉积功率更高,击穿风险增加;短脉冲产生电子、离子总数少,平均能量低,沉积功率低,击穿风险低于长脉冲;脉冲上升时间的缩短和延长,只会提前或推后击穿时间,并不会改善击穿压力;材料二次电子发射率的增加会给击穿造成巨大压力,表面光滑度对击穿过程影响不大;电离频率和电子平均能量随释气压强增加均先增加后减小,低气压二次电子倍增占优,高气压碰撞电离占优。     

Energy gap of a charge density wave in NbSe3 induced by a high magnetic field above the Peierls transition temperature

The effect of a magnetic field on the energy gap of the charge density wave (CDW) in NbSe₃ near the temperature T _p2 of the lower Peierls transition has been investigated using interlayer tunneling spectroscopy. It has been shown that the magnetic field increases the energy gap and can even induce it at temperatures higher than T _p2 by 15–20 K. As the field strength increases, the peak amplitude of the gap singularity of the tunneling spectrum first increases, reaches its maximum at 20–30 T, and then decreases. The increase in the gap peak amplitude is attributed to the field-induced improvement of the condition of the CDW nesting, while the decrease in the amplitude in high fields, to the breakdown of the ground state caused by its Zeeman splitting.     

Cu掺杂ZnO稀磁半导体磁电性能影响的模拟计算

在Cu重掺杂量摩尔数为0.02778–0.16667的范围内, 对ZnO掺杂体系磁电性能影响的第一性原理研究鲜见报道. 采用基于自旋密度泛函理论的平面波超软赝势方法, 用第一性原理计算了两种不同Cu单掺杂量Zn_1-xCu_xO (x=0.02778, 0.03125)超胞的能带结构分布和态密度分布. 结果表明, 掺杂体系是半金属化的稀磁半导体; Cu掺杂量越增加、相对自由空穴浓度越增加、空穴有效质量越减小、电子迁移率越减小、电子电导率越增加. 此结果利用电离能和Bohr半径进一步获得了证明, 计算结果与实验结果相符合. 在限定的掺杂量0.02778–0.0625 的条件下, Cu单掺杂量越增加、掺杂体系的体积越减小、总能量越升高、稳定性越下降、形成能越升高、掺杂越难. 在相同掺杂量、不同有序占位Cu双掺ZnO体系的条件下, 双掺杂Cu-Cu间距越增加, 掺杂体系磁矩先增加后减小; 当沿偏a轴或b轴方向Cu–O–Cu相近邻成键时, 掺杂体系会引起磁性猝灭; 当沿偏c轴方向Cu–O–Cu相近邻成键时, 掺杂体系居里温度能够达到室温以上的要求. 在限定的掺杂量0.0625–0.16667的条件下, 沿偏c轴方向Cu–O–Cu相近邻成键时, Cu 双掺杂量越增加, 掺杂体系总磁矩先增加后减小. 计算结果与实验结果变化趋势相符合.     

Correlation between electron state density change and the electrical resistivity and magnetic permeability changes in the nanostructured powder of the NiMo alloy

The nanostructured powders of the Ni_95.4Mo_4.6 and Ni₉₉Mo₁ alloys (average crystallite dimensions of 14 and 21 nm) were obtained by the electrochemical deposition from ammonium solutions of nickel and molybdenum salts. The method of differential scanning calorimetry (DSC) and measurement of temperature dependence of the powder's electrical resistivity, magnetic permeability and the thermoelectromotive force were employed to examine structural changes of the powders. The nanocrystalline alloys Ni_95.4Mo_4.6 and Ni₉₉Mo₁ were stable up to about 460 K. The thermal stabilization of the alloys takes place within the temperature interval of 460–570 K. As a result of this process, a decrease in the electrical resistivity and increases in magnetic permeability as well as electron state density in the proximity of the Fermi level are observed. The crystallization temperature depends upon the current density of powder formation. The nanocrystalline alloy Ni_95.4Mo_4.6 obtained at j=70 mA cm⁻² becomes crystallized in the temperature range between 650 and 840 K, while the Ni₉₉Mo₁ alloy obtained at j=180 mA cm⁻² crystallizes in the 580–950 K temperature interval. The electrical resistivity and magnetic permeability of the nanocrystalline alloy decreased while the alloy's electron state density near the Fermi level increased after the process of crystallization took place. The electrical resistivity decrease recorded during the structural changes was due to an increase in the electron state density in the proximity of the Fermi level, as well as to an increase in the mean free path of the conducting electrons.     

Photoluminescence properties of anodic alumina membranes with ordered nanopore arrays

Photoluminescence (PL) of anodic alumina membranes (AAMs) with ordered nanopore arrays fabricated in oxalic acid has been investigated under different annealing temperatures. The PL intensity firstly increases, and at 500 °C reaches a maximum value, then decreases. The structural transition from amorphous to γ-Al₂O₃ in AAMs has been confirmed by X-ray diffraction. Thermogravimetric analysis results and electron paramagnetic resonance measurements revealed that the PL band of alumina membranes could be attributed to the oxygen-related defect centers (F⁺ centers) rather than the luminescent centers transformed from oxalic impurities.     

High-Pressure/High-Temperature NFS Study of Magnetism in LuFe 2 and ScFe 2

Using the new technique of nuclear forward scattering (NFS) of synchrotron radiation, we studied the magnetic hyperfine fields B hf and ordering temperatures T M of the Laves phases LuFe 2 (cubic C15) and ScFe 2 (hexagonal C14) at pressures up to 90 GPa and temperatures up to 700 K. For LuFe 2 we find for T M first an increase from 562 K at 0 GPa to 603 K at 10 GPa and then a decrease to 295 K around 75 GPa. The hyperfine fields B hf show at 295 K a continuous decrease with pressure, indicating a reduction of the Fe band moment. A similar behaviour of both T M and B hf was observed in ScFe 2.     

Structural changes during annealing of submicro- and nanocrystalline aluminum alloys

The annealing-induced evolution of the structure and microhardness of submicro-and nanocrystalline Al—3% Mg and Al 1570 alloys produced by torsional severe plastic deformation are studied. Annealing of the Al-3% Mg alloy at 373–423 K and annealing of the Al 1570 alloy at 373–473 K are shown to result in the relaxation of internal stresses and subsequent normal grain growth. As the annealing temperature increases, the microhardness decreases. At higher temperatures (473 K for the Al—3% Mg alloy and 573 K for the Al 1570 alloy), anomalous grain growth takes place. This growth is accompanied by the appearance of numerous grains with a high dislocation density, a high concentration of impurity atoms in grain boundaries, and an increase in the microhardness. These effects are explained.     

Temperature dependences of optical properties,chemical composition,structure,and laser damage in Ta2O5 films

Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures,annealing temperatures,and annealing times.The effects of temperature on the optical properties,chemical composition,structure,and laserinduced damage threshold(LIDT) are systematically investigated.The results show that the increase of deposition temperature decreases the film transmittance slightly,yet annealing below 923 K is beneficial for the transmittance.The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in thehexagonal phase when annealed at 1073 K.While an interesting near-crystalline phase is found when annealed at 923 K.The LIDT increases with the deposition temperature increasing,whereas it increases firstly and then decreases as the annealing temperature increases.In addition,the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT,which is mainly due to the improvement of the O/Ta ratio.The highest LIDT film is obtained when annealed at 923 K,owing to the lowest density of defect.     

Ga含量对Mn2-xNiGa1+x结构和磁性的影响

系统研究了铁磁性形状记忆合金Mn_{2 -x}NiGa_1+x的结构、磁性和有序化转变. 研究表明: 随着Ga含量的增加, Mn_{2 -x}NiGa_1+x的母相结构由Hg₂CuTi 型逐渐转变到Cu₂MnAl型Heusler结构. 母相的晶格常数先增加后降低, 当x=0.3时达到最大值. 0.3 ≤x ≤0.8时, 材料除呈现Heusler结构的主相之外, 还出现了Ni₂In型六角相. 过渡金属中3d电子之间交换相互作用的减弱, 导致Mn_2-xNiGa_1+x主相的居里温度由Mn₂NiGa的590 K逐渐降低至Ga₂MnNi的220 K左右; 当x=0.6–0.8时, Ni₂In型六角相的居里温度与主相的居里温度出现分离. Ga对Mn的替代引起合金中原子间耦合作用的变化, 导致低温下Mn_{2 -x}NiGa_1+x的饱和磁化强度先增加后降低, 即x≤0.4时呈上升趋势, x>0.4时急剧下降. 差热分析结果显示, 随着x从0增加到1, 样品熔化温度逐渐降低, B2相到Heusler相的转变温度先降低后增加.