Ni52Mn24Ga24单晶中取向内应力的热动力学计算

测量了Ni52Mn24Ga24单晶样品在磁场加载和未加载情况下马氏体相变时的相变应变.分析结果表明:用提拉法生长单晶时在晶体内部引入了单一取向的内应力,该取向内应力可诱导马氏体变体择优取向,从而导致马氏体相变时产生大的相变应变.从理论上计算了该内应力的大小.另外,对样品在马氏体态单纯磁诱导应变的热动力学研究,表明取向内应力在马氏体态依然存在.     

N i50.5Mn24Ga25.5取向晶体相变应变性能的研究

采用区熔法制备了Ni505_50.5Mn24₂₄Ga255_25.5取向晶体，在底部、中部和顶部各切取一块样品进行相变应变测试.在中部样品中获得了高达14%的相变应变，应变随加热冷却循环次数的增加而逐步降低，第9次和第10次相变时应变为08%.在底部和顶部样品中，降温过程的应变随温度的变化呈现先收缩后膨胀或先膨胀后收缩的现象，我们认为这是由于样品中高度择优取向的马氏体变体竞争的结果所致. 关键词： NiMnGa 取向晶体 相变应变     

单晶Ni52Mn24Ga24中马氏体变体择优取向的物理表征

利用各种实验手段对M52Mn24Ga24单晶中马氏体变体的择优取向进行了表征.针对金相观察、磁场干预的相变应变、磁感生应变等实验结果,分析了马氏体相变过程变体自发择优取向和磁诱导择优取向的机理.根据不同方向磁场干预相变应变的结果,计算了Ni52Mn24Ga24单晶中等效取向内应力的大小约为2.45 MPa.从变体择优取向造成的有效弹性和磁畴分布两个方面,对单晶样品在[001]和[010]两个等价的晶体学方向上磁感生应变特性的差别,包括最大应变值、饱和场、滞后效应和起始磁场数值的参数,进行了分析和讨论.     

单晶Ni2MnGa中取向内应力对变体分布规律的研究

对单晶Ni2MnGa的马氏体相微观结构进行了分析，发现可能是由于在单晶生长过程中在生长方向存在取向的内应力，导致该单晶样品发生马氏体相变时马氏体变体会沿生长方向择优排列.通过对单晶磁化曲线的测量，讨论了变体的择优排列对磁畴分布的影响. 关键词： 马氏体相变 Ni2MnGa     

铁磁形状记忆合金Ni52.2Mn23.8Ga24的马氏体相变及其物理表征

对Ni52.2Mn23.8Ga24的单晶样品在马氏体相变过程中的相变潜热、磁性、电阻以及应变等物理序参量进行了测量.测量结果表明:不同的物理机制表征的相变温度有所不同.利用马氏体相变的GT关系予以分析,解释了不同测量方法获得的相变温度差别的原因.研究指出,Heusler合金Ni2MnGa的相变是分布晶格畸变类型,磁结构的变化发生在第二步晶格的非均匀切变,但相变应变与GT模型有区别. 关键词： 马氏体相变 Ni52.2Mn23.8Ga24     

内应力对铁磁性形状记忆合金Ni-Mn-Ga马氏体相变路径的影响

在单晶样品Ni52Mn245Ga235中观察到了单纯由温度诱发的完全的热弹性中间马氏体相变,测定了母相和中间马氏体相的晶体结构和晶格参数.通过对研磨成不同晶粒度大小的单晶样品的研究,发现晶粒度小于50μm时,由于机械研磨引入的内应力可以使中间马氏体相变消失.但这种引入的内应力并不引起马氏体相变温度的明显改变.计算了不同晶粒度大小的样品由于机械研磨引起的微观应变和引入的微观内应力.分析指出,马氏体相变路径的选取与机械研磨引入的内应力大小密切相关. 关键词： Ni52Mn245Ga235 中间马氏体相变     

Ni2MnGa单晶马氏体相变过程摩擦耗能的热动力学计算

根据相界面摩擦原理，在推导出计算Ni₂MnGa系统热动力学参量的一般表示式的基础上，结合马氏体相变温度分别在室温以下、室温附近、室温以上三种非正配分比Ni₂MnGa单晶自发相变应变和交流磁化率随温度变化的测量结果，计算了三种样品马氏体相变过程中界面摩擦所消耗的能量.结果进一步表明正是相变过程中的界面摩擦导致了相变的热滞后，而三种样品马氏体相变过程的摩擦耗能和相变热滞后存在较大差别的原因在于三种样品马氏体相变生成物具有不同的结构. 关键词： 马氏体相变 应变 界面摩擦     

Si掺杂的铁磁形状记忆合金Co50Ni21Ga29Six的物性研究

成功生长了Co₅₀Ni₂₁Ga₂₉:Si(x=1,2)单晶样品,对其磁性,马氏体相变及其相关性质进行了细致的测量.发现掺Si成分的单晶具有非常迅速的马氏体相变行为、2.5％的大相变应变、大于100 ppm的磁感生应变和4.5％的相变电阻.进一步研究指出,在CoNiGa合金中掺入适量Si元素,能够降低材料的马氏体相变温度,减小相变热滞后,提高材料的居里温度,并使得磁性原子的磁矩有所降低.尤其重要的是Si元素的添加能够增大材料马氏体的磁晶各向异性能,改善马氏体变体的迁移特性,从而获得更大的磁感生应变. 关键词： 铁磁形状记忆合金 Heusler合金 50Ni₂₁Ga₂₉Si_x')" href="#">Co₅₀Ni₂₁Ga₂₉Si_x     

铁磁形状记忆合金Ni52.5Mn23.5Ga24马氏体相变热滞后的研究

用相界面摩擦原理计算了Ni525Mn235Ga24单晶样品在马氏体相变过程中由于相界面摩擦所消耗的能量.计算结果表明,克服相界面摩擦所需要的能量为1314Jmol,仅占相变潜热的一小部分.另外,精细的交流磁化率测量样品的转变循环回线结果表明,相变热滞后的大小和马氏体的转变百分数成正比,从而进一步证明了热弹性马氏体相变的热滞后来源于相界面推移过程中的摩擦 关键词： 马氏体相变 Ni2MnGa     

Ni53.2Mn22.6Ga24.2单晶的两步热弹性马氏体相变及其应力应变特性

对具有两步完全热弹性的Ni_53.2Mn_22.6Ga_24.2单晶的物性采用多种测量手段进行了表征,特别研究了不同温度下的应力-应变特性.研究表明,热诱发的中间马氏体相变应变远大于马氏体相变应变.在较低的形变温度下,沿单晶母相［001］方向的压应力诱发的是两步马氏体相变,材料表现出赝弹性;在较高的形变温度下,只能观察到一步马氏体相变,材料展现出完全超弹性特性.此外,利用热力学理论分别计算了诱发马氏体相变和中间马氏体相变的临界应力与形变温度的关系,与实验测量得到的结果相符. 关键词： 马氏体相变 形状记忆效应 应变 超弹性     

哈斯勒合金Ni50Mn35In15的马氏体相变及其磁热效应

利用电弧炉熔炼了Ni₅₀Mn₃₅In₁₅多晶样品,根据磁性测量对其马氏体相变和磁热效应进行了系统研究.结果表明,随着温度的降低,样品在室温附近先后发生了二级磁相变与一级结构相变特征的马氏体相变,导致它的磁化强度产生突变. 同时通过低温下的磁滞回线的测量发现样品存在交换偏置行为,表明低温下马氏体相中铁磁和反铁磁共存. 此外,根据Maxwell方程,计算了样品在马氏体相变温度附近的磁熵变,当温度为309K,磁场改变5 T时,样品的磁熵变可达22.3J/kgK. 关键词： 哈斯勒合金 50Mn₃₅In₁₅')" href="#">Ni₅₀Mn₃₅In₁₅ 马氏体相变 磁热效应     

Anisotropic magnetomechanical effect in Tb0.3Dy0.7Fe2 alloy

In this paper, domain rotations in Tb_0.3Dy_0.7Fe₂ alloy under a compressive stress applied along various crystallographic axes alone have been investigated on the basis of 3D Stoner-Wohlfarth model by following the conventional free energy minimization procedure. The dependence of both the domain rotations and the strains caused by the compressive stress on the stress directions has been revealed. And it has been found that the anisotropic magnetomechanical effect arises from the dependence of the stress induced anisotropy on the stress direction. This study is very helpful for the better understanding of magnetic behavior of magnetostrictive materials under both stress and field.     

Thermal expansion of La3S4 at low temperatures

The thermal expansion of the superconductor La₃S₄ has been investigated on a single crystal by a capacitive method between 1.6 and 14 K. The relative length change shows a well pronounced second order phase transformation near 8.05 K, which is caused by the superconducting transition. From the calculated linear thermal expansion coefficient we determine the pressure coefficient of the transition temperature and of the thermodynamic critical field as well as the thermodynamic critical field itself. Furthermore we estimate the electronic, phononic and total Grüneisen parameters. These parameters have been used to discuss on the basis of the McMillan equation the reason for the increase of the transition temperature under pressure.     

Strain characteristics and superelastic response of single crystals

The intermartensitic transformation, in a two-step complete thermoelastic martensitic transformation in Ni_53.2Mn_22.6Ga_24.2 single crystals, provides a much larger strain than that of the martensitic transformation. With a biasing magnetic field, the intermartensitic transformation strain is inhibited and the martensitic transformation strain is enhanced. Compressive stress–strain characteristics can be affected greatly by a static magnetic field. At low deformation temperature, the irreversible transformation strain induced by the stress becomes reversible, when a static magnetic field is applied. Further, the magnitude of the stress necessary for rearrangement of martensitic variants is dependent on the direction of the biasing magnetic field. Moreover, a well-defined character of the twin-boundary motion, similar to the soliton motion, has been observed upon loading or unloading.     

DIELECTRIC RELAXATION BEHAVIOR OF CERAMICS IN THE Pb(Zn1/3Nb2/3)O3-BaTiO3-PbTiO3 SYSTEM

The dielectric properties of ceramics in Pb(Zn_1/3Nb_2/3)O₃-BaTiO₃-PbTiO₃ system were characterized using dielectric-temperature spectra. A spontaneous (zero field) relaxor-normal ferroelectric tran sition was observed for tetragonal rich compositions. A significant hysteresis effect accompanied by this transition, similar to first-order phase transition of normal ferroelectrics. This behavior was different from that of other relaxors, in which such transitions occurred only under a biased dc field. This observation was explained in terms of a thermally driven transformation from an ensemble of polar microregions to normal long-range ferroelectric state (micro-macro domain transition), which was attributed to the internal field resulting from the tetragonal strain.     

单晶Ni52Mn24Ga24中马氏体变体择优取向的物理表征

关键词：     

Ni47Mn32Ga21多晶合金的磁熵变和磁感生应变

对定向凝固方法制备的Ni₄₇Mn₃₂Ga₂₁多晶合金,通过扫描电镜、金相、电子能谱等手段研究其组份和组织形貌,通过对合金磁化强度与温度关系、等温磁化曲线及磁感生应变曲线等的测量分析,研究了合金结构相变和磁相变过程中的磁熵变及不同压力下的磁感生应变. 研究结果表明:合金组份与设计组份基本一致,室温下合金大部分为马氏体相. 升温过程中合金的磁熵变在居里温度(365 K)附近有最大值,并有较大的磁熵变峰值半高宽,747 kA/m的磁场下该磁熵变最大值为-1.45 J/kg ·K,磁熵变峰值的半高宽为21 K. 合金在室温(298 K)下有较好的双向可恢复磁感生应变,480 kA/m磁场下,无压力时合金的磁感生应变值达到-670×10^-6,并趋饱和;而在与磁场方向平行的27.3 MPa外压力作用下合金的磁感生应变值增大到-1300×10^-6,且未饱和. 关键词： Ni-Mn-Ga 铁磁形状记忆合金 磁熵变 磁感生应变     

低应力振幅下非线性滞弹性内耗峰(P′1峰)的数值分析

通过差分方法，对在位错弯结气团模型的基础上推导出来的溶质原子在位错芯区内的纵向扩散方程，进行了数值求解，由此计算出了与P′₁峰相应的内耗和横量亏损随温度和振幅的变化曲线．数值计算得到的内耗曲线与以前的实验曲线，无论在外观形态上，还是在移动规律上，都完全一样．这样就从定量上解释了P′₁峰 关键词：     

Exchange bias effect in multiferroic Eu0.75Y0.25MnO3

The exchange bias phenomenon has been investigated in multiferroic Eu_0.75Y_0.25MnO₃. The material shows a weak ferromagnetism with cone spin configuration induced by external magnetic field below 30 K. Consequently, the electric polarization coming from the cycloid spin order below 30 K can be suppressed by external magnetic fields. The magnetic hysteresis loops after cooling in a magnetic field exhibit characteristics of exchange bias below the spin glassy freezing temperature (T_g)∼16 K. The exchange bias field, coercivity field, and remanent magnetization increase with increasing cooling magnetic field. The exchange bias effect is ascribed to the frozen uncompensated spins at the antiferromagnetism/weak ferromagnetism interfaces in the spin-glass like phase.     

Rashba spin splitting in the Al0.3Ga0.7N/GaN heterostructure under uniaxial strain

By solving the Schrödinger and Poisson equations self-consistently, changes of the Rashba spin splitting for the Al_0.3Ga_0.7N/GaN heterostructure under uniaxial strain are calculated, and electrons are found to take up the first two subbands. The additional polarization induced by the uniaxial strain leads to a great enhancement of the built-in electric field and the 2DEG concentration. The Rashba spin splitting almost increases linearly with the uniaxial strain, and its amplitude increases by 36% with a strain of 4×10⁻³. The effect of electrons occupying more than one subband on the Rashba spin splitting is discussed. Results show the internal electric field caused by the polarization is crucial for the considerable Rashba spin splitting in the Al_0.3Ga_0.7N/GaN heterostructure and the magnitude of the Rashba spin splitting can be greatly modulated by the uniaxial strain, which would benefit further research and application of spintronics.