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Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system 下载免费PDF全文
Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth using C60 in the hot filament chemical vapour deposition (HFCVD) system.The process of nucleation and growth of diamond films on silicon wafer using C60 as intermediate layer in HFCVD system is described.In order to increase the density of diamond nuclei on the wafers,it is not necessary to use negative bias.The UV-light pre-treatment is not beneficial for improving the diamond nucleation.The multi-layers of C60 molecules,but not a monolayer,can increase the density of diamond nuclei in the presence of H atoms. 相似文献
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Vanadium oxide thin films deposited on indium tin oxide glass by radio—frequency magnetron sputtering 总被引:1,自引:0,他引:1 下载免费PDF全文
Highly oriented VO2(B), VO2(B) + V6O13 films were grown on indium tin oxide glass by radio-frequency magnetron sputtering. Single phase V6O13 films were obtained from VO2(B) +V6O13 films by annealing at 480℃ in vacuum. The vanadium oxide films were characterized by x-ray diffraction and x-ray photoelectron spectra (XPS). It was found that the formation of vanadium oxide films was affected by substrate temperature and annealing time, because high substrate temperature and annealing were favourable to further oxidation. Therefore, the formation of high valance vanadium oxide films was realized. The V6O13 crystalline sizes become smaller with the increase of annealing time. XPS analysis revealed that the energy position for all the samples was almost constant, but the broadening of the V2p3/2 line of the annealed sample was due to the smaller crystal size of V6O13. 相似文献
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