基于半导体激光放大器增益饱和的波长转换的小信号分析

利用小信号模型对基于半导体激光放大器增益饱和的波长转换作了理论分析和实验研究，并获得了波长转换效率与半导体激光放大器特性参数关系的解析表达式．通过数学计算表明，波长转换器的频率响应不仅受到半导体激光放大器的载流子寿命的限制，而且受到半导体激光放大器的饱和功率、增益以及光波导损耗的影响． 关键词：     

饱和量子点半导体光放大器高通滤波特性

量子点半导体光放大器(QDSOA)具有更小的载流子恢复时间和更高的放大带宽,是光信息处理的理想器件。利用QDSOA三能级电子跃迁速率方程和光场传输方程,建立了有源区分段模型,对饱和QDSOA的频率响应特性进行研究,得到输入光功率、注入电流、有源区长度、最大模式增益和载流子跃迁时间等参数与3dB截止频率和抑制比之间的关系。结果表明,饱和QDSOA具有高通滤波特性,有较宽的高频信号放大带宽和较高的3dB截止频率,通过优化参数,可以获得比传统体材料和量子阱材料半导体光放大器更加优异的特性,为QDSOA的设计与应用提供了理论指导。     

双波长数据包并行缓存

以半导体光放大器为非线性元件的双环耦合全光缓存器(DLOB)为基础,实现了速率为2.5 Gb/s双波长数据的并行缓存.不同波长光信号合成后的功率随机波动,导致由半导体光放大器交叉相位调制产生的相位差随机波动.在考虑吸收损耗的情况下,对常用的半导体光放大器增益特性曲线进行了修正并与实测值拟合,得到了更为准确的增益特性曲线.在此基础上进行了理论分析,提出了通过调节控制光功率到最佳点以便减小相位差波动的方法.     

对向传输下半导体光放大器的超快动态特性(英文)

通过引入场传输模型对在对向传输方案下的半导体光放大器中增益、相位及啁啾的超快动态特性进行了数值分析.讨论了半导体光放大器中带内效应光谱烧孔与载流子加热,以及带间效应载流子消耗对动态特性的影响.同时分析了半导体光放大器的有源区长度对增益动态特性的影响.结果显示:对向传输下同样可应用蓝移失谐滤波器提高半导体光放大器的工作速率,但与同向传输方案不同的是,在对向传输方案下利用短有源区长度的半导体光放大器更利于实现高速的全光波长变换.理论分析结果可为基于半导体光放大器的超快全光信号处理提供理论指导.     

F-P半导体激光放大器弱信号机制下的增益特性研究

利用直接耦合的激光器放大器对,观察了弱信号机制下Fabry-Perot的半导体激光放大器的光放大.测量了放大器增益随放大器注入电流的变化关系,并将实验结果同理论模型相比较,发现理论和实验是一致的.把F-P放大器看作是一个光电探测器,通过测量放大器的短路光电流,得到了激光器同放大器之间的耦合效率.     

宽面积垂直腔半导体光放大器

在反射模式下,对于970 nm宽面积垂直腔半导体光放大器(VCSOA)的增益和带宽特性进行了实验研究和分析。当注入电流为57％阈值电流、信号输入功率为0.7 W,取得了24.8 dB的放大,测得的放大器的带宽为0.14 nm。实验中测量的增益值大于理论计算值,这是由于宽面积垂直腔光放大器内存在多个横向模式,每个模式都有相应的放大,所以总的增益大于理论计算的某个模式的增益。这种宽面积垂直腔光放大器不仅可以提高增益,而且还能提高信号光的饱和输入功率。对970 nm宽面积VCSOA的结构进行了优化设计,模拟结果表明,要提高半导体激光器的增益和带宽,可以通过适当降低垂直腔面发射激光器的上DBR的反射率来获得。     

利用色散管理抑制半导体光放大器引起的信道间串扰

理论研究了半导体光放大器增益饱和效应引起的信道间串扰,数值模拟了多路信道复用时系统的误码率随复用信道数和光功率的变化情况,发现随着复用信道数的增加,半导体光放大器增益饱和引起的信道间串扰越来越严重.对利用色散管理技术抑制半导体光放大器引起的信道间串扰进行了实验研究,实验验证了信号色散补偿之前用半导体光放大器放大可以抑制半导体光放大器引起的信道间串扰.结果表明,采用先放大后色散补偿这种新的色散补偿方案,可以有效抑制半导体光放大器引起的信道间串扰.     

控制光和信号光频差对太赫兹光非对称解复用器性能的影响

讨论了半导体光放大器中的带间效应，及载流子热效应、谱烧孔效应、双光子吸收以及超快非线性折射等带内效应对半导体光放大器的动态特性的影响，讨论了两种情况：1)保持控制光波长不变而改变信号光频率，2)保持控制光和信号光频率相同而同时改变它们的频率下半导体光放大器的增益、相位动态特性以及太赫兹光非对称解复用器的开关窗口特性。数值结果表明，为了得到较为平坦而窄的开关窗口，控制光波长应与信号光波长相同，且其与半导体光放大器增益谱中心波长的差值应该大一些。     

基于XGM波长变换系统中变换脉冲上升时间和脉冲宽度的研究

本文首先对半导体光放大器(SOA)中影响载流子寿命的因素进行了简单的理论分析,建立了SOA中动态载流子的模型,并且用这个模型分析了在2.5Gb/s非归零码(NRZ)条件下,基于交叉增益调制(XGM)波长变换系统中,泵浦光和信号光不同功率组合、不同波长组合,SOA的不同偏置电流等条件对变换脉冲的上升时间和脉冲的半高全宽的影响,并对结果进行了理论上的解释.     

基于硅波导的喇曼光放大器

在硅波导上添加反向偏压的PIN结构,当波导产生受激喇曼散射时,可以将波导中双光子吸收(TPA)产生的光生自由载流子扫出波导,降低了波导的非线性损失,极大地提高了硅波导中泵浦光对信号光的喇曼增益。为了应用已经非常成熟的硅工艺,并且应用硅波导使器件小型化,根据法布里-帕罗(F-P)腔和行波放大器理论,在硅波导两端的解理面蒸镀增透膜,应用这种波导的喇曼效应设计了一种光放大器,即基于硅波导的喇曼光放大器。建立了计算放大器增益的方程,给出了不同波导长度和输入功率情况下的放大器增益,得出适当增加波导长度和泵浦光功率可以得到较高喇曼增益的结论。基于硅的光放大器有较高的饱和功率且没有泵浦源的限制,通过调整泵浦激光的波长可以放大不同波长的信号光。     

Fourier synthesis of 1.8-THz optical-pulse trains by phase locking of three independent semiconductor lasers

Fourier synthesis of ultrafast optical-pulse trains was demonstrated based on optical phase locking of three independent continuous-wave semiconductor lasers. Pulse repetition frequencies as high as 1.81 THz were limited by the gain bandwidth of an erbium-doped fiber amplifier. The waveforms of the pulse trains were maintained over a long period by use of an auxiliary optical phase-locked loop. The repetition frequency could be tuned continuously over a range of 100 MHz.     

利用半导体激光放大器放大半导体激光超短脉冲及选取单模

本文对半行波半导体激光放大器的超短光脉冲响应进行了研究,结果表明:脉宽为27ps,重复频率为1GHz的超短光脉冲通过放大器后,脉冲没有展宽,并且由于半行波半导体激光放大器对波长的选择放大性,在输入为多模的情况下,获得了单模超短脉冲输出。     

Modeling of gain and phase dynamics in quantum dot amplifiers

By means of an electron hole rate equation model we explain the phase dynamics of a quantum dot semiconductor optical amplifier and the appearance of different decay times observed in pump and probe experiments. The ultrafast hole relaxation leads to a first ultrafast recovery of the gain, followed by electron relaxation and, in the nanosecond timescale, radiative and non-radiative recombinations. The phase dynamics is slower and is affected by thermal redistribution of carriers within the dot. We explain the ultrafast response of quantum dot amplifiers as an effect of hole escape and recombination without the need to assume Auger processes.     

有源光纤环等效时间脉冲复制研究

对利用半导体光放大器有源光纤环为光等效时间采样提供低失真脉冲序列的方法进行了研究。分析了提高复制精度的辅助直流光非线性增益抑制方法,并给出基于递推方式,可进一步提高采样精度的后处理算法。通过实验验证了辅助直流光注入对复制器非线性增益的抑制作用;以及在不充分辅助直流光注入条件下,利用后处理算法抑制非线性误差的效果。结果显示利用半导体光放大器有源光纤环结合后处理算法可以有效地为光等效时间采样提供特性一致、误差可处理的时序脉冲序列。     

Optical clock repetition-rate multiplier for high-speed digital optical logic circuits

Repetition-rate multiplication has been shown by use of a fiber ring oscillator with a semiconductor optical amplifier as the gain medium and by use of fast saturation and recovery of the amplifier from an external optical pulse train. Repetition-frequency multiplication up to 6 times and up to 34.68-GHz frequency have been achieved.     

All optical frequency encoding method for converting a decimal number to its equivalent binary number using tree architecture

In any kind of computing and data processing system the use of binary numbers are found very much suitable and reliable. On the other hand several natural representations have been realized using decimal numbers. So conversion of a decimal number to its binary equivalent and vise-versa are of great importance in the field of computation technology. There lie already a number of established methods regarding such conversion processes. Again optical tree architecture is one of the most promising systems for realizing the optical conversion of any decimal number to its equivalent binary. Here in this communication the authors propose a new method for optical conversion of a decimal number to its binary equivalent using tree architecture based system and frequency encoding principle. In frequency encoding system, frequency of light is used for encoding of decimal digits or binary bits instead of intensity variation. For example 0 and 1 bits of binary number are coded by two different frequencies of light signal, instead of representing the presence of light as 1 and absence by 0. The proposed conversion process has multifaceted advantages in communication, as well as in data processing. To implement the above conversion some characteristic features of semiconductor optical amplifier (SOA) have been used massively. The wavelength conversion property, cross gain modulation and some nonlinear properties of SOA are exploited to get the frequency encoded response. The proposed system carries all the basic advantages of optical processing as well as those of frequency encoding also.     

All optical clock division and multiplication by injection mode-locked laser based on SOA

Optical clock division and multiplication were realized with an injection mode-locked fiber ring laser based on semiconductor optical amplifier SOA owing to the relatively long recovery time of carriers in SOA and the rational harmonic mode-locking. Second frequency division and 1.5th frequency multiplication of 10 GHz, second and th frequency division of 20 GHz optical pulse trains were realized, respectively, in the experiment.     

Enhancement of ring network in presence of optimized semiconductor optical amplifiers

By utilization of optimized semiconductor optical amplifiers, the design of ring network is achieved for a large number of nodes with reasonable quality and zero power penalty. The gain fluctuation occurs due to variation in parameters of the semiconductor optical amplifier for ring network. It is evaluated that nodes go on decreasing with increase in gain saturation of the semiconductor optical amplifier.     

High-speed wavelength-swept semiconductor laser with a polygon-scanner-based wavelength filter

Ultrahigh-speed tuning of an extended-cavity semiconductor laser is demonstrated. The laser resonator comprises a unidirectional fiber-optic ring, a semiconductor optical amplifier as the gain medium, and a novel scanning filter based on a polygonal scanner. Variable tuning rates up to 1150 nm/ms (15.7-kHz repetition frequency) are demonstrated over a 70-nm wavelength span centered at 1.32 microm. This tuning rate is more than an order of magnitude faster than previously demonstrated and is facilitated in part by self-frequency shifting in the semiconductor optical amplifier. The instantaneous linewidth of the source is <0.1 nm for 9-mW cw output power and a low spontaneous-emission background of -80 dB.     

High gain S-band semiconductors optical amplifier with double-pass configuration

In this paper we propose and demonstrate a double-pass configuration of a compact high gain short wavelength (S-) band amplifier based on a semiconductor optical amplifier (SOA) operating from 1480 to 1520 nm. The proposed system provides gain value of 31.07 dB at a signal power level of −40 dBm taken at 1500 nm. The measure gain profile of the double-pass configuration over different power levels and at different signal wavelengths outperforms that of the single-pass configuration. The noise figure of both configurations averages out to 10 dB. This system provides a good alternative as a high-gain and compact amplifier in the S-band region.