970nm反射式垂直腔半导体光放大器的设计与制作

设计并制作了970 nm反射式垂直腔半导体光放大器(VCSOA),基于放大器结构,对放大器的噪声特性、增益和带宽特性进行了实验研究和理论分析.研究了反射式放大器的增益与垂直腔半导体激光器出光口径的关系,发现增益随着出光口径的增大而增大.对于970 nm的信号光,经过出光口径为400 μm的VCSOA后,最高获得了26 ...     

基于半导体光放大器的一阶IIR微波光子学滤波器及其品质因素分析

对基于半导体光放大器(SOA)环形腔结构的一阶无限冲击响应(IIR)微波光子学滤波器的品质因数(Q值)进行了实验和理论研究. 通过在有源环内置入窄带光滤波器,并调节有源环的输入光功率、SOA抽运电流、实验得到的最高Q值接近200. 理论分析表明为了得到较高的Q值,应尽可能提高信噪比和信号光的环路增益. 在考虑了 SOA中放大的自发辐射(ASE)噪声的基础上,计算了输入光功率、SOA抽运电流、环内光滤波器的带宽对Q值的影响. 数值计算的结果与实验现象基 关键词： 微波光子学滤波器 Q值')" href="#">Q值 半导体光放大器 放大的自发辐射     

基于环行腔激光器四波混频型可调谐波长转换的理论研究

建立了完整的基于半导体环行腔激光器四波混频型可调谐波长转换器的宽带理论模型.模型中考虑了半导体光放大器的材料增益谱、载流子的空间分布、光场的纵向空间分布和宽带放大自发发射等关键因素，并通过数值模拟，从理论上研究了这种波长转换器的各种性能与输入信号光功率、注入电流、输出耦合器的耦合比和环行腔激光器激射光波长的关系.理论上所得结论与文献中实验结果符合得很好. 关键词： 半导体环行腔激光器 四波混频 波长转换 放大自发发射     

直接扣除法测量半导体光放大器频率响应

在光电子器件散射参量定义的基础上建立了基于直接扣除法的半导体光放大器频率响应测量系统,测量中通过扣除激光器和探测器系统的频率响应,得到放大器固有的频率响应。对InGaAsP体材料行波腔半导体光放大器样品进行了测量,得到了放大器在不同注入光功率和不同偏置电流下的频率响应曲线。这些曲线很好地反应了半导体光放大器的增益饱和和噪声特性,进一步分析发现半导体光放大器对低频调制信号的放大能力弱于对高频信号的放大能力,分析认为其原因在于半导体光放大器的载流子寿命有限导致低频信号长时间消耗载流子时,载流子数量无法及时恢复,从而使得增益降低。     

基于半导体光放大器的交叉增益调制效应实现2.5Gb/s归零码的全光波长变换

采用半导体光放大器的交叉增益调制进杆了2.SGb/s的归零码光脉冲的波长变换。向下波长变换间距大于20nm,向上波长变换间距大于10nm.对变换信号测量了接收机入纤功率和误码率的关系。对实验结果进行了分析,实验表明采用半导体光放大器的交叉增益调制效应对归者吗进行波长变换时存在着一些问题。     

F-P半导体激光放大器弱信号机制下的增益特性研究

利用直接耦合的激光器放大器对,观察了弱信号机制下Fabry-Perot的半导体激光放大器的光放大.测量了放大器增益随放大器注入电流的变化关系,并将实验结果同理论模型相比较,发现理论和实验是一致的.把F-P放大器看作是一个光电探测器,通过测量放大器的短路光电流,得到了激光器同放大器之间的耦合效率.     

基于垂直谐振腔结构的半导体光放大器理论分析

由新型垂直腔半导体光放大器（VCSOAs）器件结构出发,在反射模式和透射模式两种 情况下,计算了VCSOAs的分布布拉格反射堆（DBR）反射率、单程增益与增益、带宽的关系 ,其中DBR反射率的增大伴随着增益的上升,但也伴随着带宽的减小.通过引入增益-带宽 积的概念,以均衡增益与带宽.计算中表明:10 dB以上增益,50 GHz以上带宽可以实现. 计算结果与文献实验相吻合,对优化VCSOAs的结构设计和性能有所裨益.     

1.55μm AlGaInAs-InP偏振无关半导体光放大器及其温度特性研究

采用低压金属有机气相外延 (LP MOCVD)设备生长并制作了 1 5 5 μmAlGaInAs InP偏振无关半导体光放大器 ,有源区为 3周期的张应变量子阱结构 ,应变量为 0 35 % ;器件制作成脊型波导结构 ,并采用 7°斜腔结构以有效抑制腔面反射 ;经蒸镀减反膜后 ,半导体光放大器的自发辐射功率的波动小于 0 3dB ,3dB带宽为 5 0nm ,半导体光放大器小信号增益近 2 0dB ,带宽亦为 5 0nm .在 1 5 30— 1 5 80nm波长范围内偏振灵敏度小于 0 5dB ,峰值增益波长的饱和输出功率达 7dBm ;器件增益随温度的升高而减小 ,当器件工作温度从 2 5℃升高至 6 5℃时 ,增益降低小于 3dB .     

新型结构可调谐全光波长转换器的理论与实验研究

可调谐波长转换器是智能化光网络中的关键光电子器件. 提出了一种基于半导体光放大器的环形激光器实现连续可调全光波长转换的方案，建立了该方案的理论模型. 理论计算和实际测定了不同条件下波长转换的输出特性，实验结果与理论计算基本符合. 实验中实现了40nm范围内连续可调、转换速率为2.5Gb/s的交叉增益调制型波长转换. 关键词： 可调谐波长转换 半导体光放大器 环形腔     

利用色散管理抑制半导体光放大器引起的信道间串扰

理论研究了半导体光放大器增益饱和效应引起的信道间串扰,数值模拟了多路信道复用时系统的误码率随复用信道数和光功率的变化情况,发现随着复用信道数的增加,半导体光放大器增益饱和引起的信道间串扰越来越严重.对利用色散管理技术抑制半导体光放大器引起的信道间串扰进行了实验研究,实验验证了信号色散补偿之前用半导体光放大器放大可以抑制半导体光放大器引起的信道间串扰.结果表明,采用先放大后色散补偿这种新的色散补偿方案,可以有效抑制半导体光放大器引起的信道间串扰.     

Spectrum Improvement of a High-Power Broad-Area Laser Diode Based on a Grating Semi-Feedback External Cavity Scheme

We propose a grating semi-feedback external cavity (GSFEC) scheme for high-power broad-area laser diodes for improving the spectrum characteristics of high-power semiconductor lasers. We design this scheme as two crossed cylindrical resonators employing a holographic diffraction grating and a rectangular highly reflecting mirror. In our experiments, we obtain stable spectrum characteristics over a tuning range of 5 nm, with maximum output power up to 764 mW at an operating current of 3.5 A. The wavelength drift rate with injection current decreases from 0.59 nm/A of free-running condition to 0.2 nm/A, and the laser bandwidth is compressed to 21.5% at 2 A.     

High-power single-mode emission from a broad-area semiconductor laser with a pseudoexternal cavity and a Fabry Perot etalon

A simple pseudoexternal cavity with a commerically available broad-area laser diode, standard optics, and a thin FabryPerot etalon provides single-mode emission with 1-W optical power and a tuning range of ~0.5nm . The linewidth is estimated at 200MHz. Such high-power semiconductor laser systems are promising light sources for atomic physics, in which narrow-band high-power light is necessary, for example, for optical pumping of alkali metal vapor. Methods for expanding the tuning range and achieving higher narrow-band optical power are discussed.     

Tunable single-mode fiber-VCSEL using an intracavity polymer microlens

We report a tunable, single-mode vertical cavity surface-emitting laser (VCSEL) format suitable for array operation, power scaling, fiber coupling, and operation in isolated environments such as those required by atom optics. The devices are fiber VCSELs, consisting of a semiconductor gain and mirror structure separated from a mirror-coated optical fiber by an air (or vacuum) gap. The gain structure has polymer microlenses fabricated on its surface, of characteristics suitable to focus the oscillating mode on both cavity mirrors, ensuring stable fundamental mode emission and high fiber coupling efficiency. We demonstrate such devices in continuous-wave operation at 1.03 microm at room temperature, with a single-mode tuning range of 13 nm, laser threshold as low as 2.5 mW, and a maximum fiber-coupled output power of 10 mW.     

一种测量GaAs-GaAlAs行波激光放大器增益特性的实验方法

本文报导了一种测量光耦合效率η的新实验方法。这个方法是建立于p-n结短路光电流原理上的。本文推导出适合于行波激光放大器的光耦合效率的公式。短路光电流用一检流计测量,利用公式获得光耦合效率的实验值。利用实验所测光耦合效率,测量了行波激光放大器的增益随注入电流变化的规律,其结果和实验符合。另外本文还介绍了在脉冲注入电流条件下测行波半导体激光放大器增益的实验方法。     

光梳主动滤波放大实现锶原子光钟二级冷却光源

提出一种结合注入锁定技术的主动滤波放大方法,将光梳直接注入锁定至光栅外腔半导体激光器,产生窄线宽激光光源,该光源可以用于锶原子光钟二级冷却.实验中,将中心波长为689 nm,带宽为10 nm的光梳种子光源注入689 nm光栅式外腔半导体激光器,通过半导体增益光谱与半导体光栅外腔,从飞秒光梳的多个纵模梳齿中挑选出一个纵模模式来进行增益放大,再通过模式竞争,实现单纵模连续光输出;同时,光梳的重复频率锁定在线宽为赫兹量级的698 nm超稳激光光源上,因此,注入锁定后输出的窄线宽激光也继承了超稳激光光源的光谱特性.利用得到的输出功率为12 mW的689 nm窄线宽激光光源实现了88Sr原子光钟的二级冷却过程,最终获得温度为3μK,原子数约为5×10~6的冷原子团.该方法可拓展至原子光钟其他光源的获得,从而实现原子光钟的集成化和小型化.     

Passively mode-locked lasers with 17.2-GHz fundamental-mode repetition rate pulsed by carbon nanotubes

17.2 GHz, the highest fundamental-mode repetition rate to our knowledge, of a carbon nanotube-based passively mode-locked laser is realized at 1570 nm by employing purified single-walled carbon nanotubes as saturable absorbers. The ultrashort linear laser cavity configured with a approximately 9 mm length is designed and demonstrated with our extremely miniaturized nanotube mode locker and a mirror-coated semiconductor optical amplifier as gain medium. The demonstrated pulsed laser has the inferred temporal pulse width of 14 ps and a 3 dB spectral bandwidth of 0.73 nm.     

All-optical flip-flop based on vertical cavity semiconductor optical amplifiers

We report the operation of an all-optical set-reset (SR) flip-flop based on vertical cavity semiconductor optical amplifiers (VCSOAs). This flip-flop is cascadable, has low optical switching power (~10 microW), and has the potential to be integrated on a small footprint (~100 microm(2)). The flip-flop is composed of two cross-coupled electrically pumped VCSOA inverters and uses the principles of cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics to achieve flip-flop functionality. We believe that, when integrated on chip, this type of all-optical flip-flop opens new prospects for implementing all-optical fast memories and timing regeneration circuits.     

850 nm centered wavelength-swept laser based on a wavelength selection galvo filter

A wavelength-swept laser is constructed using a free space external cavity configuration coupled with a fiberbased ring cavity at the 850 nm region. The external cavity filter employs a galvo-mirror scanner with a diffraction grating for wavelength selection. The filter is connected to a ring cavity through an optical circulator.The ring cavity contains a broadband semiconductor optical amplifier with a high optical output. The performance of this laser is demonstrated with broad bandwidths and narrow linewidths. The 3 dB linewidth and the bandwidth of this source are 0.05 nm(~20 GHz) and 48 nm, respectively. The maximum output power is 26 m W at 160 m A current.