在s~(1/2)=4.03GeV的e~+e~-湮没中D_s~+单标记的研究及D_s~+D_s~-对产生截面的测定

利用北京正负电子对撞机 (BEPC)和北京谱仪 (BES) ,基于在质心系能量s=4.0 3GeV的e+ e-湮没中 ,D+ s 单标记的分析结果 ,测定了D+ s →K 0 K+ 和D+ s →K0 K+ 衰变的分支比。其结果Br(D+ s →K 0 K+ ) =(3.0 2± 0 .94±0 .91) % ,Br(D+ s →K0 K+ ) =(3.2 8± 1.2 2± 0 .94) %与世界平均值在误差范围内一致 .用π+ ,K 0 K+ ,K0 K+ 作为单标记 ,共观测到 94± 13个D+ s 事例 ,测得在e+ e-湮没中D+ s D-s 对产生的截面为σprodD+s D-s =45 1± 6 3± 118pb .     

遍举衰变过程D0→Ks0π+π–和D0→Ks0K+K–及其共振态结构的实验研究

利用北京谱仪(BES–Ⅰ)在北京正负电子对撞机(BEPC)e+e–质心系能量为4.03GeV处采集的积分亮度为22.3pb–1的数据,研究了D0→K0sπ+π–,D0→K0sK+K–的衰变及其末态的共振结构.实验测得D0→K0sπ+π–过程的分支比为(5.32±0.53±0.40)%;D0→K–π+,D0→K0ρ0和D0→K0s(π+π–)non resonance过程的分支比分别为(6.05±0.32±0.49)%,(1.17±0.17±0.13)%和(1.35±0.22±0.17)%;测得D0→K0sK+K–,D0→K0和D0→K0(K+K–)non?的分支比分别为(1.04±0.2?4±0?.16)%,(1.12±0.34±0.15)%和(0.27±0.13±0.03)%.     

遍举衰变过程D~0→K_s~0π~+π~-和D~0→K_s~0K~+K~-及其共振态结构的实验研究(英文)

利用北京谱仪 (BES -Ⅰ )在北京正负电子对撞机 (BEPC)e+ e-质心系能量为 4 .0 3GeV处采集的积分亮度为 2 2 .3pb-1的数据 ,研究了D0 →K0sπ+ π-,D0 →K0sK+ K-的衰变及其末态的共振结构 .实验测得D0 →K0sπ+ π-过程的分支比为 (5 .32± 0 .5 3± 0 .4 0 ) % ;D0 →K -π+ ,D0 →K0 ρ0 和D0 →K0s(π+ π-)non resonance过程的分支比分别为 (6 .0 5± 0 .32± 0 .4 9) % ,(1.17± 0 .17± 0 .13) %和 (1.35± 0 .2 2± 0 .17) % ;测得D0 →K0sK+ K-,D0 →K0 和D0 → K0 (K+ K-) non 的分支比分别为 (1.0 4± 0 .2 4± 0 .16 ) % ,(1.12± 0 .34± 0 .15 ) %和 (0 .2 7± 0 .13±0 .0 3) % .     

用联合D0和D+单双标记测定分支比的方法

报道了用“联合D0 和D+单双标记”测定衰变分支比的方法 .基于北京谱仪 (BES)在北京正负电子对撞机 (BEPC)质心系能量s =4 .0 3GeV处获取的数据 ,利用联合D0 和D+单双标记的方法 ,可以测定D0 和D+介子单举和遍举衰变分支比 .作为该方法的应用举例 ,利用BES实验组发表的数据 ,在 90 %置信度的情况下 ,测得D+→e+ν衰变过程分支比的上限为Br(D+→e+ν) <1 .6% .此上限值与BES曾发表的结果一致 .     

用联合D0和D+单双标记测定分支比的方法

报道了用“联合D⁰和D⁺单双标记”测定衰变分支比的方法.基于北京谱仪(BES)在北京正负电子对撞机(BEPC)质心系能量s=4.03GeV处获取的数据,利用联合D⁰和D⁺单双标记的方法,可以测定D⁰和D⁺介子单举和遍举衰变分支比.作为该方法的应用举例,利用BES实验组发表的数据,在90%置信度的情况下,测得D⁺→e⁺ν衰变过程分支比的上限为Br(D+→e⁺ν)<1.6%.此上限值与BES曾发表的结果一致.     

D+和D0介子的φXl+υ遍举分支比上限的测定

利用北京谱仪(BES)在北京正负电子对撞机(BEPC)e+e-质心系能量为4.03GeV处采集的积分亮度为22.3pb-1的数据,从D介子的5个非轻子衰变模式中共选出2471±218组tagD+X(X可能是γ或π0或π±)和7629±251组tagD0X介子样本. 在这些样本中没有找到D+→φe+υ,φK-π+e+υ,和D0→φK-e+υ,φK-μ+υ的衰变事例,测定在90髎置信度下分支比的上限分别为B(D+→φe+υ)<1.38髎,B(D+→φK-π+e+υ)<2.01髎,B(D0→φK-e+υ)<0.53髎,和B(D0→φK-μ+υ)<0.53髎.     

s=4.03GeV下τ±→π+π－π±υτ衰变的测量

利用北京谱仪(BES)在4.03GeV正负电子对撞能量下获取的数据,[研究了,τ+τ-产生过程.借助双标记方法分析了τ±→π+π-π±υτ衰变事例.测定分支比Br(τ±→a1±υτ→ρ0π±υτ,ρ0→π+π-=(7.3±0.5)%,Br(τ±→K*±υτ→Ks0π±υτ,Ks0→π+π-)=(0.6±1.5)×10-3.并由Daliz投影分布的分析,确认a1的主要衰变方式ρπ.同时,也观察到a1衰变中以S波贡献为主的现象.采用Kuhn模型拟合实验数据,得到:ma1=1.24±0.02GeV,Γa1T=0.57±0.07GeV.     

J/ψ衰变中的ΛΛ,ΛΛγ和ΛΛπ0产生

利用北京正负电子对撞机(BEPC)上的北京谱仪(BES)收集的7.8×10⁶个J/ψ事例,测量得到J/ψ→ΛΛ,ΛΛγ和ΛΛπ⁰三个衰变道的分支比分别为Br(J/ψ→ΛΛ)=(l.08±0.06±0.24)×10^－3,Br(J/ψ→ΛΛγ)－4(90% CL),和Br(J/ψ→ΛΛπ⁰)=(2.3±0.7±0.8)×l0^－4; 第一个衰变道的角分布为dN dcosθ=N₀(1+αcos²0),α=0.52±0.33±0.13.     

用神经网络方法鉴别τ的强子衰变

用神经网络法鉴别τ的单叉强子衰变τ→h+nπ0+v,n=0,1,2,3.并进而测得上述各道的分支比:Br(π/Kv)=(12.18±0.26±0.42)%,Br(π/Kπ0v)=(25.20±0.35±0.50)%,Br(π/K2π0v)=(8.88±0.37±0.38)%,Br(π/K3π0v)=(1.70±0.24±0.39)%,其中第一项误差是统计误差,第二项是系统误差.     

J/ψ→π03(π+π－)分支比的测定

用BESⅠ的7.8×10⁶J/ψ数据更为精确地测定了J/ψ→π⁰3(π⁺π^－)和J/ψ→ω²(π⁺π^－)的分支比(Br(J/ψ→π⁰3(π⁺π^－))=(2.52±0.06±0.43)%,Br(J/ψ→π⁰3(π⁺π^－))=(1.31±0.09±0.21)%.同时对4π不变质量谱和ωππ不变质量谱进行研究分析,试图观察是否存在有兴趣的信号.     

Boron electrical activation in dual B+ + N+ + and B+ + Ar+ ion-implanted silicon

Silicon wafers were implanted with 40 keV B⁺ ions and then with 50 keV N⁺ or 100 keV Ar+ ions to doses from 1.2 x 1014 to 1.2 x 1015 cm^–2. The implanted samples were studied using the Hall effect and standard van der Pauw methods. The dependences of the sheet resistivity and the sheet concentration of charge carriers on the annealing temperature in the range from 700 to 1300 K were obtained. Models describing the influence of additional implantation of nitrogen and argon ions on the process of boron electrical activation during annealing are proposed.     

Bremsstrahlung of soft photons in the reaction p + p → π+ + d + γ

The limit theorem of Low is used to construct the amplitude of the soft bremsstrahlung accompanying the reaction p + p ⁺ + d. The obtained amplitude is expressed in terms of the amplitudes of the nonradiative process.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 29–32, December, 1970.     

Observation of the decay B+ --> K+K-pi+

We report the observation of charmless hadronic decays of charged B mesons to the final state K{+}K{-}pi{+}. Using a data sample of 347.5 fb{-1} collected at the Upsilon(4S) resonance with the BABAR detector, we observe 429+/-43 signal events with a significance of 9.6sigma. We measure the inclusive branching fraction B(B{+}-->K{+}K{-}pi{+})=[5.0+/-0.5(stat)+/-0.5(syst)]x10{-6}. Inspection of the Dalitz plot of signal candidates shows a broad structure peaking near 1.5 GeV/c{2} in the K+K- invariant mass distribution. We find the direct CP asymmetry to be consistent with zero.     

Observation of Au + Au → Au + Au + ρ 0 and Au + Au → Au* + Au* + ρ 0 with STAR

We report the first observation of the reactions Au + Au → Au + Au + ρ ⁰ and Au + Au → Au* + Au* + ρ ⁰ with the STAR detector. The ρ are produced at small perpendicular momentum, as expected if they couple coherently to both nuclei. We discuss models of vector meson production and the correlation with nuclear breakup, and present a fundamental test of quantum mechanics that is possible with the system.     

Observation of B+-->LambdaLambdaK+

We report the first observation of the charmless hyperonic B decay, B+-->LambdaLambdaK+, using a 140 fb(-1) data sample recorded at the Upsilon(4S) resonance with the Belle detector at the KEKB (e+)(e-) collider. The measured branching fraction is B(B+-->LambdaLambdaK+) = (2.91(+0.90)(-0.70) +/- 0.38) x 10(-6). We also perform a search for the related decay mode B+-->LambdaLambdapi+, but do not find a significant signal. We set a 90% confidence-level upper limit of B(B+-->LambdaLambdapi+) < 2.8 x 10(-6).