共查询到20条相似文献,搜索用时 125 毫秒
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随着半导体激光光源在激光加工领域的应用不断扩展,以激光二极管阵列制成的光纤耦合模块由于存在耦合效率低的缺点,已不能满足激光加工低成本的需求,因此研制高耦合效率的半导体激光器光纤耦合模块变得十分重要。本文将8只波长为808 nm、输出功率为5 W的单管半导体激光器通过合束技术耦合进光纤,制备了一种高效率的半导体激光器光纤耦合模块。光纤芯径为200 μm、数值孔径(NA)为0.22,光纤输出功率为33.2W,耦合效率超过83%,这种高效率半导体激光器光纤耦合模块,可用于激光打标、塑料加工等领域。 相似文献
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《中国光学与应用光学文摘》2006,(6)
TG156.99 2006065028激光熔覆技术在钛合金表面改性中的应用=Application of laser cladding in surface modification of titanium alloy [刊,中]/郭桂芳(内蒙古工业大学材料科学与工程学院.内蒙古,呼和浩特(010062)).陈芙蓉…//表面技术.—2006,35(1).—66—69激光熔覆技术在钛合金表面改性方面得到了广泛的应用,通过激光熔覆技术,可显著改善钛合金的表面耐磨 相似文献
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为了研究以单管半导体激光器为基本单元的高功率、高亮度波长合束光纤耦合模块,设计出新型光纤激光器泵浦模块,基于ZEMAX光学设计软件等设计了一种由30支单管半导体激光器组成、可输出3种波长光束的光纤耦合模块。将经快慢轴整形、空间合束、波长合束、光路转向及聚焦的光束耦合进入芯径105μm、数值孔径0.22的普通光纤,最终得到尾纤输出端高于357.91 W的输出功率,光纤耦合效率为99.42%,光功率密度为27.24 MW/cm~2-stras。为了验证模块的实际操作的可行性,分析了光纤端面法线与入射光束之间的夹角对耦合效率的影响,结果显示该夹角对模块的耦合效率影响较小。同时,应用ANSYS软件对模块散热情况的分析结果可知,模块散热性能良好。故该模块各项性能良好,可靠性较高,实现了高功率、高亮度、多波长的多单管半导体激光器光纤耦合模块的设计目的。 相似文献
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激光表面改性及其应用 总被引:1,自引:0,他引:1
激光表面改性技术在改善材料表面性能,提高材料使用寿命方面具有突出的优越性.本文介绍了在工业应用中比较常见的激光硬化、激光表面合金化、激光熔覆,并在此基础上展望了激光表面改性技术的发展前景. 相似文献
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《中国光学与应用光学文摘》2004,(4)
使用2 kw半导体激光在工具钢表面熔覆高速钢粉末。在同轴送粉的粉末汇聚点与激光的聚焦点可获得无裂纹的熔覆层。随着激光功率的增加,熔覆层厚度和粉末利用率增加,同时基体对熔覆层的稀释率下降。获得的熔覆层的硬度达到800 Hvo.3,基体硬度200 Hvo.:,表明 相似文献
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采用大功率半导体激光熔覆和重熔的工艺在低碳钢表面制备Ni-Fe-B-Si-Nb合金非晶复合涂层,并对所得涂层进行了纳米压痕性能测试。研究结果表明,当激光熔覆时激光功率为0.8kW,熔覆速度为0.36m/min,送粉速度为12g/min,重熔时激光功率为3.5kW,熔覆速度为8m/min,在低碳钢表面成功制备了Ni40.8Fe27.2B18Si10Nb4非晶复合涂层,涂层主要由非晶相和NbC颗粒相组成。纳米压痕测试结果表明经激光重熔后所得非晶复合涂层的显微硬度和弹性模量远远大于未重熔的熔覆层,并且也大于同成分大块非晶。 相似文献
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为降低半导体激光主动照明红曝,选择波长880 nm大功率半导体激光器作为新型激光主动照明成像系统光源。根据光纤耦合过程光参数积不变原理,研制出波长880 nm大功率半导体激光器阵列单光纤耦合模块,利用光纤匀光作用使激光光束匀化整圆后用于激光主动照明。首次在波长880 nm大功率半导体激光器上采用阶梯反射镜光束整形方法,使激光光参数积与光纤匹配,激光高效耦合进入纤芯400μm、数值孔径0.22的光纤。室温条件下光纤耦合模块连续输出功率44.9 W,电光转化效率35%,波长880 nm大功率半导体激光器阵列光纤耦合模块,不仅其红曝小而且对应CMOS图像传感器光谱响应度较高,系统成像质量好。 相似文献
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We improved the thermal equivalent-circuit model of the laser diode module(LDM) to evaluate its thermal dynamic properties and calculate the junction temperature of the laser diode with a high accuracy.The thermal parameters and the transient junction temperature of the LDM are modeled and obtained according to the temperature of the thermistor integrated in the module.Our improved thermal model is verified indirectly by monitoring the emission wavelength of the laser diode against gas absorption lines,and several thermal parameters are obtained with the temperature uncertainty of 0.01 K in the thermal dynamic process. 相似文献
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We improve the thermal equivalent-circuit model of the laser diode module (LDM) to evaluate its thermal dynamic property and calculate the junction temperature of the laser diode with a high accuracy. The thermal parameters and the transient junction temperature of LDM are modeled and obtained according to the temperature of the thermistor integrated in the module. Our improved thermal model is verified indirectly by monitoring the emission wavelength of the laser diode against gas absorption lines, and several thermal parameters are obtained with the temperature uncertainty of 0.01 K in the thermal dynamic process. 相似文献
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Toshiyuki Kawashima Tomokazu Ichii Takeshi Kanzaki Masanobu Yamanaka Yasukazu Izawa Sadao Nakai Hirofumi Kan 《Optical Review》2000,7(6):520-524
Experimental results of the thermal and spectral characteristics of a monolithic stack of high power quasicontinuous wave 940-nm InGaAs linear laser diode arrays have been evaluated. Thermal resistance as the most important thermal parameter characterizing a high-power laser diode package was obtained using the temperature rise measured directly by a thermo-camera. A new simple and convenient technique to measure a spectral transition of the emission from laser diode arrays is proposed. Spectral chirping due to the transient thermal power dissipated during the laser pulse was observed as a time-evolution of the spectral profile; it gave a comprehensible image of the chirping behavior. Comparing the temperature rise in the diode junction with the thermal simulation, it was determined that the thermal shift of central wavelength dλ/dT was 0.21 nm/°C. Detailed performances were identified for pumping a Yb3+ doped crystalline laser, and it was verified that the laser diode arrays were satisfactory to meet pumping source requirements for coupling to Yb3+ absorption linewidth. 相似文献
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通过设计高效率808 nm非对称宽波导外延结构,减少P型波导层和包层的自由载流子光吸收,实现腔内光吸收损耗为0.63 cm~(-1).制备的808 nm半导体激光器阵列在室温25?C下,实现驱动电流135 A,工作电压1.76 V,连续输出功率大于150 W,斜率效率高达1.25 W/A,中心波长809.3 nm,器件最高电光转换效率为65.5%,这是目前国内报道的808 nm半导体激光器阵列的最高电光转换效率,达到国际同类器件最好水平. 相似文献
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Jun-Mo Han Se-Jong Baik Jeoung-Youn Jeong Kiegon Im Hyung-Myung Moon Heung-Ryoul Noh Doo-Sun Choi 《Optics & Laser Technology》2007,39(2):313-316
We propose a simple laser diode module that consists of a Fabry–Perot laser diode (FP-LD) and a fiber Bragg grating (FBG) for a compact, stable and low-cost wavelength division multiplexing light source. The spectral bandwidth of the laser output from the FP-LD/FBG module was measured to be 0.024 nm. The side mode suppression ratio (SMSR) was 44.42 dB at the injected electric current of 14 mA and at 25 °C. Both the BER characteristics and the eye diagram were measured, and they confirmed that the present laser diode module could be used as an alternative configuration for a low-cost light source. 相似文献