p型GaN/Al0.35Ga0.65N/GaN应变量子阱中二维空穴气的研究

对Ga面p型GaN/Al_0.35Ga_0.65N/GaN应变异质结构中形成的二维空穴气(2DHG)进行了研究.首先基于半导体-绝缘体-半导体异质结构模型确定了应变异质中的临界厚度，然后自洽求解薛定谔方程和泊松方程，计算了当中间势垒层AlGaN处于完全应变状态和半应变状态两种条件下，顶层GaN及中间层AlGaN厚度的变化对2DHG分布的影响.计算结果表明，势垒层AlGaN和顶层GaN的应变状态和厚度对极化引起的2DHG面密度及分布有重要影响.在此基础上制备了p型GaN/Al_0.35Ga_0.65N/GaN应变量子阱结构肖特基器件，并通过器件的C-V测试证实了异质结处2DHG的存在.器件响应光谱的测试结果表明，由于p型GaN/Al_0.35Ga_0.65N/GaN量子阱中强烈的极化作用和Stark效应使得器件零偏压和反向偏压时的响应光谱都向短波方向移动了10 nm，在零偏压下器件在280 nm处的峰值响应为0.022 A/W，在反向偏压为1 V时，峰值响应达到0.19 A/W，已经接近理论值. 关键词： AlGaN 二维空穴气 极化效应     

AlxGa1-xN/GaN异质结构中Al组分对二维电子气性质的影响

通过用数值计算方法自洽求解薛定谔方程和泊松方程，研究了Al组分对Al_xGa1-xN/GaN异质结构二维电子气性质的影响，给出了Al_xGa_{1-x< /sub>N/GaN异质结构二维电子气分布和面密度，导带能带偏移以及子带中电子分布随AlxGa 1-xN势垒层中Al组分的变化关系，并用AlxGa1-xN/GaN 异质结构自发极化与压电极化机理和能 关键词： x}Ga_1-xN/GaN异质结构')" href="#">Al_xGa_1-xN/GaN异质结构 二维电子气 自发极化 压电极化     

AlN插入层对AlxGa1-xN/GaN界面电子散射的影响

本文研究AlN作为Al_xGa_1-xN/GaN插入层引起的电子输运性质的变化, 考虑了Al_xGa_1-xN和AlN势垒层的自发极化、压电极化对Al_xGa_1-xN/AlN/GaN双异质结高电子迁移率晶体管(HEMT)中极化电荷面密度、二维电子气(2DEG) 浓度的影响, 分析了AlN厚度与界面粗糙度散射和合金无序散射的关系; 结果表明, 2DEG 浓度、界面粗糙度散射和合金无序散射依赖于AlN层厚度, 插入一层1–3 nm薄的AlN层, 可以明显提高电子迁移率.     

用肖特基电容电压特性数值模拟法确定调制掺杂AlxGa1-xN/GaN异质结中的极化电荷

研究发展了用肖特基电容电压特性数值模拟确定调制掺杂Al_xGa_1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al_0.22Ga_0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al_0.22Ga_0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN 关键词： xGa_1-xN/GaN异质结')" href="#">Al_xGa_1-xN/GaN异质结 极化电荷 电容电压特性 数值模拟     

蓝宝石衬底上GaN/AlxGa1-xN超晶格插入层对AlxGa1-xN外延薄膜应变及缺陷密度的影响

室温300K下,由于Al_xGa_1-xN的带隙宽度可以从GaN的3.42eV到AlN的6.2eV之间变化,所以Al_xGa_1-xN是紫外光探测器和深紫外LED所必需的外延材料.高质量高铝组分Al_xGa_1-xN材料生长的一大困难就是Al_xGa_1-xN与常用的蓝宝石衬底之间大的晶格失配和热失配.因而采用MOCVD在GaN/蓝宝石上生长的Al_xGa_1-xN薄膜由于受张应力作用非常容易发生龟裂.GaN/Al_xGa_1-xN超晶格插入层技术是释放应力和减少Al_xGa_1-xN薄膜中缺陷的有效方法.研究了GaN/Al_xGa_1-xN超晶格插入层对GaN/蓝宝石上Al_xGa_1-xN外延薄膜应变状态和缺陷密度的影响.通过拉曼散射探测声子频率从而得到材料中的残余应力是一种简便常用的方法,Al_xGa_1-xN外延薄膜的应变状态可通过拉曼光谱测量得到.Al_xGa_1-xN外延薄膜的缺陷密度通过测量X射线衍射得到.对于具有相同阱垒厚度的超晶格,例如4nm/4nm,5nm/5nm,8nm/8nm的GaN/Al_0.3Ga_0.7N超晶格,研究发现随着超晶格周期厚度的增加Al_xGa_1-xN外延薄膜缺陷密度降低,Al_xGa_1-xN外延薄膜处于张应变状态,且5nm/5nmGaN/Al_0.3Ga_0.7N超晶格插入层Al_xGa_1-xN外延薄膜的张应变最小.在保持5nm阱宽不变的情况下,将垒宽增大到8nm,即十个周期的5nm/8nmGaN/Al_0.3Ga_0.7N超晶格插入层使Al_xGa_1-xN外延层应变状态由张应变变为压应变.由X射线衍射结果计算了Al_xGa_1-xN外延薄膜的刃型位错和螺型位错密度,结果表明超晶格插入层对螺型位错和刃型位错都有一定的抑制效果.透射电镜图像表明超晶格插入层使位错发生合并、转向或是使位错终止,且5nm/8nmGaN/Al_0.3Ga_0.7N超晶格插入层导致Al_xGa_1-xN外延薄膜中的刃型位错倾斜30°左右,释放一部分压应变.     

GaAs/AlGaAs异质结的界面束缚二维激子效应

本文讨论了GaAs/AlGaAs异质结界面的H线发光及其性能。用双晶X射线衍射及皮秒光致发光证明了H线与界面质量密切相关,并且有相似于激子跃迁的寿命行为。用限制于异质结界面势阱的二维电子(或空穴)与分布于GaAs边的三维空穴(或电子)组成的二维激子效应,解释了H线的实验结果。并讨论了不同外延生长的异质结与界面有关的发光行为。     

高In组分InxGa1－xN/GaN多量子阱材料电致荧光谱的研究

研究了高In组分In_xGa_1-xN/GaN（x≈30%）多量子阱（MQWs）结构 发光二极管样品在不同注入电流下的电致荧光（EL）谱及反常的双峰现象.结果表明：有源区 内建电场在外界电流注入条件下逐渐受屏蔽，这一效应在高In组分In_xGa_{1 -x}N/GaN MQWs材料的发光复合机理中占有重要地位. 关键词： xGa_1-xN/GaN多量子阱')" href="#">In_xGa_1-xN/GaN多量子阱 电致荧光谱 内建电场     

压力下应变异质结中施主杂质态的Stark效应

对应变GaN/Al_xGa_1-xN异质结系统,考虑理想界面突变势垒,引入简化相干势近似,采用变分法讨论了流体静压力下外界电场对束缚于界面附近的浅杂质态结合能的影响.对GaN为衬底的闪锌矿应变异质结,分别计算了(001)和(111)取向时杂质态的结合能随压力、杂质位置、电场强度以及组分的变化关系.结果表明,杂质态结合能随流体静压力呈近线性变化.电场对杂质态的Stark效应则随杂质位置不同而呈现谱线蓝、红移动.此外,还讨论了在不同压力情况下,Al组分对杂质结合能的影响.当杂质处于GaN材料中且距界面较远时,Al组分的增加使电子的二维特性增强,从而使结合能增大,且压力加剧增幅的增加;当杂质处于Al_xGa_1-xN材料中,Al组分的增加削弱了杂质与电子间的库仑相互作用,故而结合能降低. 关键词： xGa_1-xN异质结')" href="#">GaN/Al_xGa_1-xN异质结 杂质态 压力 Stark效应     

p型GaN/Al0.35Ga0.65N/GaN应变量子阱中二维空穴气的研究

对Ga面p型GaN/Al0.35Ga0.65N/GaN应变异质结构中形成的二维空穴气(2DHG)进行了研究.首先基于半导体-绝缘体-半导体异质结构模型确定了应变异质中的临界厚度,然后自洽求解薛定谔方程和泊松方程,计算了当中间势垒层AlGaN处于完全应变状态和半应变状态两种条件下,顶层GaN及中间层AlGaN厚度的变化对2DHG分布的影响.计算结果表明,势垒层AlGaN和顶层GaN的应变状态和厚度对极化引起的2DHG面密度及分布有重要影响.在此基础上制备了p型GaN/Al0.35 Ga0.65N/GaN应变量子阱结构肖特基器件,并通过器件的C-V测试证实了异质结处2DHG的存在.器件响应光谱的测试结果表明,由于p型GaN/Al0.35Ga0.65N/GaN量子阱中强烈的极化作用和Stark效应使得器件零偏压和反向偏压时的响应光谱都向短波方向移动了10 nm,在零偏压下器件在280 nm处的峰值响应为0.022 A/W,在反向偏压为1 V时,峰值响应达到0.19 A/W,已经接近理论值.     

第一性原理的广义梯度近似+U方法的纤锌矿Zn1-xMgxO极化特性与Zn0.75Mg0.25O/ZnO 界面能带偏差研究

在纤锌矿结构Zn_1-xMg_xO/ZnO异质结构中发现了高迁移率的二维电子气(2DEG), 2DEG 的产生很可能是由于界面上存在不连续极化, 而且2DEG通常也被认为是由极化电荷产生的结果. 为了探索2DEG的形成机理及其产生的根源, 研究Zn_1-xMg_xO合金的极化特性与ZnO/Zn_1-xMg_xO超晶格的能带排列是非常必要的. 基于第一性原理广义梯度近似+U方法研究了Zn_1-xMg_xO合金的自发极化随Mg组分x的变化关系, 其中极化特性的计算采用Berry-phase方法. 由于ZnO与Zn_1-xMg_xO 面内晶格参数大小相当, ZnO 与Zn_1-xMg_xO 的界面匹配度优良, 所以ZnO/Zn_1-xMg_xO 超晶格模型较容易建立. 计算了Mg_0.25Zn_0.75O/ZnO超晶格静电势的面内平均及其沿着Z(0001)方向上的宏观平均. (5+3)Mg_0.25Zn_0.75O/ZnO超晶格拥有较大的尺寸, 确保远离界面的Mg_0.25Zn_0.75O与ZnO区域与块体计算情况一致. 除此之外, 基于宏观平均为能量参考, 计算得到Mg_0.25Zn_0.75O/ZnO超晶格界面处价带偏差为0.26 eV, 并且导带偏差与价带偏差的比值处于合理区间, 这与近来实验上报道的结果相符. 除了ZnO在[0001]方向上产生自发极化外, 由于在ZnO中引入Mg杂质会产生应变应力, 导致Mg_xZn_1-xO层产生额外的极化值. 这样必然会在Mg_0.25Zn_0.75O/Zn界面处产生非连续极化现象, 促使单极性电荷在界面处积累, 从而在Mg_0.25Zn_0.75O/Zn超晶格中产生内在电场. 此外, 计算了Mg_0.25Zn_0.75O/ZnO超晶格的能带排列, 由于价带偏差Δ E_V=0.26 eV与导带偏差ΔE_C=0.33 eV, 表明能带遵循I型排列. Mg_0.25Zn_0.75O/ZnO 的这种能带排列方式足以让电子与空穴在势阱中产生禁闭作用. 2DEG在电子学与光电子学领域都有重要应用, 本文的研究结果将对Mg_0.25Zn_0.75O/ZnO 界面2DEG的设计与优化中起到重要作用, 并且可以作为研究其他Mg组分的Mg_xZn_1-xO/ZnO超晶格界面电子气特性的参考依据.     

Self-organization of five species in a cyclic competition game

Cyclic competition game models, particularly the “rock–paper–scissors” model, play important roles in exploring the problem of multi-species coexistence in spatially ecological systems. We propose an extended “rock–paper–scissors” game to model cyclic interactions among five species, and find that two of the five can coexistent when biodiversity disappears, which is different from the “rock–paper–scissors” game. As the number of fingers is five, we named the new model the “fingers” game, where the thumb, forefinger, middle finger, ring finger, and little finger cyclically dominate their subsequent species and are dominated by their former species. We investigate the “fingers” model in two ways: direct simulations and nonlinear partial differential equations. An important finding is that the number of species in a cyclic competition game has an influence on the emergence of biodiversity. To be specific, the “rock–paper–scissors” model is in favor of maintaining biodiversity in comparison with the “fingers” model when the variables (population size, reproduction rate, selection rate, and migration rate) are the same. It is also shown that the mobility and reproduction rate can promote or jeopardize biodiversity.     

Contrastive analysis on tone between Putonghua and Taiwan Mandarin

The differences of the pitch and duration of Chinese syllables between Putonghua （PTH） and Taiwan Mandarin （TM） were studied. The speech materials to be used are not only isolated syllables, but also sentences. The results reveal that： For the isolated syllables, T1 and T2 in TM are influenced by Minnan dialect, therefore their pitch are lower than those in PTH. T3 is fall-rise in PTH, while it is fall in TM. Moreover, the syllable duration sequence for different tone is T3〉T2〉T1〉T4 in PTH, while it is T1〉T2〉T3〉T4 in TM. For the syllables in sentences, T2 is mid-rise in PTH, while it is mid-level in TM. And the T3 is longer than T4 but shorter than T1 or T2 in PTH, while it is the shortest in TM. Furthermore the effects of prosodic phrase boundary on duration for different tones are almost the same in PTH, but the lengthening part of T1 or T2 is longer than that of T3 or T4 in TM.     

Experimental study on downstep in Chinese intonation

Downstep in pitch contour of Chinese Putonghua is examined using subtly designed sentences by controlling tone combinations. The results show both automatic and nonautomatic downstep phenomena exist in Chinese. In non-automatic downstep, low tones compress downwards the pitch range of the following syllables. and the main influence of downstep is on topline. Low tone not only lower the topline behind it, but also raise the high tones before it, the effects are compatible with each other. In automatic downstep, the topline of pitch contour in intonational phrase is presented as a linear downtrend, but it differs among speakers due to the effect of personal stress practice. In comparison with downstep phenomenon in other tone or non-tone languages, the downstep ratio in Chinese is not constant, and the domain of downstep is not limited within the adjacent tones.     

Abelian-Higgs phase of SU(2) QCD and glueball energy

It is shown that SU(2) QCD admits an dual Abelian-Higgs phase, with a Higgs vacuum of a type-Ⅱ superconductor. This is done by using a connection decomposition for the gluon field and the random-direction approximation. Using a bag picture with soft wall, we presented a calculational procedure for the glueball energy based on the recent proof for wall-vortices [Nucl. Phys. B 741(2006)1].     

Theoretical analysis and simulation of conjugate heights for dual-conjugate AO system in lidar

A multi-conjugate adaptive optics （MCAO） can offer a possibility of widening field of view （FOV） characterized by the isoplanatic angle, and the choose of conjugate height becomes a basic problem for MCAO, which influences the size of iosplanatic angle. Considering the application of lidar, the isoplanatic angle＇s expressions of two deformable mirrors （DMs） MCAO for uplink and downlink are deduced. The effects of conjugate heights for dual-conjugate AO are thoughtfully discussed, and the isoplanatic angles are further analyzed. The results show that the isopanatic angle varies with the conjugate height and reaches the maximum as the conjugate height is at the optimal altitude. Moreover, the optimal conjugate height changes with the propagation distance.     

Quick single-photon detector with many avalanche photo diodes working on the time division

Due to the limit of response speed of the present single-photon detector, the code rate is still too low to come into practical use for the present quantum key distribution (QKD) system.A new idea is put up to design a quick single-photon detector.This quick single-photon detector is composed of a multi-port optic-fiber splitter and many avalanche photo diodes (APDs).Au of the ports with APDs work on the time division and cooperate with a logic discriminating and deciding unit driven by the clock signal.The operation frequency lies on the number N of ports, and can reach N times of the conventional single-photon detector.The single-photon prompt detection can come true for high repetition-rate pulses.The applying of this detector will largely raise the code rate of the QKD, and boost the commercial use.     

Signal generation in an isotropic medium in scanning electron acoustic microscope

Based on the research in Ref. [5][Materials Science and Engineering, 1989; A122： 57 63], an improved model of heat source is set up, the different modes of Lamb wave in an isotropic sample generated by a chopped electron beam at frequency f are obtained with integral transform and normal function expansion method, and the output signal of PZT coupled at the back surface of the sample is found out. The generation mechanism of SEAM （Scanning Electron Acoustic Microscopy） signal is discussed. It shows that the SEAM is a near field imaging technique with high spatial resolution and its best lateral spatial resolution is about 2√2α （α is the radius of the focused electron beam）. Some of experimental results of SEAM images are presented in the paper and it shows that the spatial resolution of SEAM is better than 0.5 μm and smaller than the thermal diffusion length of the sample. Therefore the character of near field imaging in SEAM is also proved experimentally.     

High efficiency filtering using two-dimensional photonic crystal coupled cavity structures

Transmission spectra of coupled cavity structures (CCSs) in two-dimensional (2D) photonic crystals (PCs) are investigated using a coupled mode theory, and an optical filter based on CCS is proposed. The performance of the filter is investigated using finite-difference time-domain (FDTD) method, and the results show that within a very short coupling distance of about 3λ, where λ is the wavelength of signal in vacuum, the incident signals with different frequencies are separated into different channels with a contrast ratio of 20 dB. The advantages of this kind of filter are small size and easily tunable operation frequencies.