用肖特基电容电压特性数值模拟法确定调制掺杂AlxGa1-xN/GaN异质结中的极化电荷

研究发展了用肖特基电容电压特性数值模拟确定调制掺杂Al_xGa_1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al_0.22Ga_0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al_0.22Ga_0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN 关键词： xGa_1-xN/GaN异质结')" href="#">Al_xGa_1-xN/GaN异质结 极化电荷 电容电压特性 数值模拟

EXTRACTION OF POLARIZATION-INDUCED CHARGE DENSITY INMODULATION-DOPED AlxGa1-xN/GaN HETEROSTRUCTURETHROUGH THE SIMULATION OF THE SCHOTTKY CAPACITANCE-VOLTAGE CHARACTERISTICS

Polarization-induced charge density in modulation-doped Al_xGa_1-xN/GaN heterostructures is extracted through the simulation of the Schottky Capacitance-Voltage (C-V) characteristics. C-V measurements were made on Pt Schottky contacts on modulation-doped Al_0.22Ga_0.78N/GaN heterostructures. The C-V characteristics were simulated numerically using the three-dimensional Fermi model.Influence of sample parameters on C-V characteristics is analized by the simulation.Polarization-induced charge density,n-AlGaN doping level and Schottky barrier height have different influences on the C-V characteristics,and thus the polarization-induced charge density can be extracted accurately.The polarization-induced sheet charge density at the heterointerface is extracted to be 6.78×10¹²cm^-2 in the Al_0.22Ga_0.78N/GaN heterostructure with the Al_0.22Ga_0.78 N thickness of 45nm.This work provides a method for quantitative analysis of the polarization-indeced charge in modulation-doped Al_xGa_1-xN/GaN heterostructures.