棱镜型光热偏振光谱法

提出了一种高灵敏度的棱镜型光热偏转光谱法,给出了系统的理论分析,导出了由泵浦光引起的探测光的偏向角表达式.并与普通型光热偏转技术作了比较,理论分析结果表明,棱镜型光热偏转检测方法比普通型光热偏转技术具有更高的灵敏度.     

基于LabVIEW的光热偏转检测系统的设计

将虚拟仪器技术和光热偏转检测技术相结合,在LabVIEW平台上设计开发了一套材料热扩散率测量的自动扫描和数据处理系统。整个系统在仪器控制、数据采集和数据显示等方面实现了自动化测量,并且集成了光热偏转检测技术的数据处理功能。实验结果表明系统运行稳定,操作简单快捷,具有很好的实时性和直观性。     

光热偏转检测技术自动测量的研究

介绍了光热偏转技术自动测量材料热物性的原理及实验方法。根据光热偏转检测理论建立了一套自动检测系统,从自动控制、数据采集和数据处理等方面实现了光热偏转检测技术的自动化测量。设计出了步进电机自动控制和数据处理软件。利用该系统对钛酸锶钡材料的热扩散率进行了测量,发现随着掺杂量铈的增加,钛酸锶钡的热扩散率逐渐减小,当掺杂量铈增加到一定值时,其热扩散率又开始增加。     

光学薄膜热膨胀系数的研究

光热位移偏转技术结合横向光热偏转技术可用于研究薄膜样品的热膨胀系数.本文以SiO_2、TiO_2、ZrO_2、MgF_2、ThF4等单层光学薄膜为例.报道相关的实验方法及实验结果.     

双层材料光热偏转光谱的定量研究

从三线传热方程出发,给出了双层材料的光热偏转光谱的理论模型,讨论了光热偏转信号的特征及其在扫描成象应用中的意义.     

光热偏转光谱技术研究薄层试样浓度的光热衰减特性

本文报道了以品红和结晶紫样品,研究了光热偏转信号随激发光束照射时间变化的规律,同时探讨了这一方法新应用的可能性。     

用共线光热偏转技术测量光学薄膜的微弱吸收

用具有高灵敏的共线光热偏转技术研究SiO_2、ZrO_2、MgF_2、ZnS等单层光学薄膜的吸收特性,测得它们的吸收率.实验结果与激光量热法及横向光热偏转技术符合良好,表明共线光热偏转技术是测量光学薄膜弱吸收的较理想方法.     

光学薄膜的光热偏转信号分析

本文给出了透明基体上的单层薄膜在激光辐照下的温度分布和光热形变偏转信号的理论表达式。通过数值计算,分析了偏转信号与薄膜参数、基体参数以及调制频率之间的关系,用反射式光热偏转装置对光学薄膜的光热偏转信号进行了实验研究。结果表明,理论计算和实验结果是一致的。     

用横向光热偏转技术测量光学薄膜的微弱光吸收

用横向光热偏转技术(TPDS)测量光学薄膜的弱吸收,灵敏度达10~(-5).因为薄膜样品在调制频率较低时属热薄试样,本文基于这一原理实现了TPDS的精密定标.     

微纳米尺度红外光热膨胀效应及新型光热驱动方法研究

介绍了一种新型的基于非对称结构的光热微型驱动器.驱动器由两个宽细不同的薄悬臂组成.当红外激光照射在悬臂上时,宽窄悬臂的比表面积不同,导致其温度升高和伸长量不同,从而使驱动器产生偏转.建立了驱动器的热力学模型,并给出了偏转量的计算公式.使用准分子激光加工系统制作了一个长750μm的微驱动器样机,红外激光(998nm)作为驱动源,利用自制的控制监控系统进行了可行性试验,观察并测量了驱动器偏转量与红外激光功率的关系.结果表明,本驱动器在16mW的红外激光的驱动下,即可产生258μm的偏转量.利用光热膨胀的方法 关键词： 光热膨胀 非对称结构 微驱动器 红外激光     

金属材料次表面缺陷成像检测系统及其应用

介绍了一种基于光热光偏转检测技术的原理,可以检测金属材料次表面缺陷空间分布的激光热波探测系统.该系统具有结构紧凑,调试简便,运行稳定,测试结果可靠的特点,它用半导体激光作泵浦光源和探测光源,采用电源调制的方式对泵浦光束进行调制,有频率稳定、噪音小的优点,同时系统可以用低压直流电源供电,为仪器化和便携化研究创造了条件.利用该系统对金属铝片次表面不同深度的凹槽作了检测,得到了与实际样品一致的检测结果.     

Photothermal deflection investigation of bulk Si and GaSb transport properties

The photo-thermal deflection technique (PTD) is used to study the transport properties such as non-radiative lifetime of minority carriers (τ _nr), electronic diffusivity (D) and surface recombination velocity (S) in bulk silicon (Si) and gallium antimonide (GaSb) semiconductors. A generalized one-dimensional theoretical model has been also developed, and the coincidence between experimental curves giving the normalized amplitude and phase variations versus square root modulation frequency and the corresponding theoretical curves makes possible to deduce the electronic parameters cited above.     

消色散270°偏转磁铁系统设计及束流动力学研究

对三种常用结构的270°偏转磁铁进行系统的分析研究,采用数值计算和模拟方法对双磁铁不对称偏转结构、三块90°磁铁偏转结构和70°+130°+70°偏转结构这三种不同的270°偏转磁铁系统进行模拟,给出偏转系统的消色散传输条件,并且分析了束流包络在偏转系统和出口管道中的变化情况。经过分析对比,详细列出了三种结构的优势与劣势。双磁铁不对称结构适用于医用加速器,三块90°磁铁偏转结构适用于需要在出口长距离漂移的辐照加速器,而70°+130°+70°偏转结构可以满足出口一定距离的无损漂移,同时实现相对较低的成本,是工业辐照加速器较为经济适宜的选择。     

基于相对论修正的飞秒电子衍射系统

对工作于扫描状态下的飞秒电子衍射系统电子束偏转量的计算方法作了理论研究.讨论了超短电子脉冲宽度的测量方法,比较了相对论效应对电子束的偏转量及对电子束脉冲宽度的的影响,并做了相应的数值计算.计算结果显示,在忽略了电场的边缘效应等因素后,电子束轴向速度的相对论修正与否对偏转距离和电子束脉冲宽度的影响分别达到20 mm和65 fs.     

Diamond for high-density optical recording

The feasibility of optical recording by irradiating diamond with energetic ion beams has been investigated. The radiation damage in the exposed target areas provides sufficient optical contrast to the unexposed parts as to distinguish analog or digital patterns by visible light. The physical properties of the radiation effects have been studied by a variety of experimental techniques, including optical transmission and luminescence, photo-thermal deflection spectroscopy, infrared and Raman spectroscopy, and ion beam channeling in conjunction with atomic force measurements. The important result is that permanent data storage in diamond is possible with high pixel densities. A unique feature of diamond, irradiated up to and beyond a critical ion fluence, is the thermal phase transformation to its allotropic form of graphite. This feature can be used to enhance optical contrast at sub-amorphization irradiation levels. Estimates on the pixel density of data recording in diamond are presented and the necessity of developing large-area diamond wafers of high optical quality is emphasized. Received: 28 December 2000 / Accepted: 9 January 2001 / Published online: 8 May 2001     

高纯锗中浅受主的光热电离光谱

在液氦温度附近, 运用傅里叶变换光谱以及与之相连的磁光光谱系统, 对室温电阻率约为50Ω·cm的p型高纯锗样品进行了高灵敏度的光热电离光谱的研究.从实验上确定了高纯锗样品中浅杂质光热电离的最佳温度范围, 在该温度范围内测量了样品的光热电离光谱, 指出该样品中主要杂质为浅受主硼与铝. 对杂质谱线发生分裂的两种原因, 补偿性杂质导致的快速复合以及随机应力等, 进行了分析讨论. 关键词： 高纯锗 光热电离光谱 元素半导体中的杂质和缺陷能级     

Fluorescent photoswitchable nanohybrids based on photochromism

A new type of fluorescent photoswitchable nanohybrids based on photochromism has been assembled, in which hydrophobic diarylethene and matched fluorescent dye are assembled in the nanoscale crosslinked polymeric matrix via a modified miniemulsion polymerization process and a seeded polymerization technique. The nanohybrids exhibited excellent fluorescent photoswitchable action owing to efficient photoinduced energy transfer whether the nanohybrids as nanoparticles dispersed in water or in a polymer film, and the improved photo-thermal stability of both essential components could be readily achieved. Importantly, our assembling approach is much simpler than the covalent chemical synthesis, and is a general method for other hydrophobic photochromic compounds.     

Analysis of amorphous-nano-crystalline multilayer structures by optical, photo-deflection and photo-current spectroscopy

Thin film structures consisting of nano-crystalline and amorphous silicon layers deposited on glass by plasma enhanced chemical vapour deposition have been studied by optical spectroscopy methods (transmittance, photo-thermal deflection spectroscopy and photo-current spectroscopy) while structure was examined by Raman spectroscopy. The nano-crystalline layers were grown on the same amorphous layers, using different radio-frequency (RF) discharge powers, leading to different structural and optical properties. The energy dependence of the absorption coefficient above the band gap agrees well to the bimodal size distribution of crystals and crystal fraction estimated by Raman spectroscopy. For energies below the band gap, the comparison of the absorption of the bi-layer systems with respect to single amorphous layer reveals that the samples produced at higher RF discharge present a higher disorder degree (Urbach edge increases) and higher number of structural defects (absorption related to the defects increases).     

细电子束像差与畸变参量非劣解中的最优解

以电子束偏转磁场的像差和畸变为目标，对参量进行非劣解中找出贴近理想的最优解。以SDS-3电子束曝光机的磁复合偏转系统为基础，分析了像差与电子束主轨迹的关系。并给出了磁聚焦和静电的偏转场相复合情况下竖轴的3级几何像差系数和1级色差系数公式。应用中表明，复合系统结构简单紧凑，像差小而可以不用动态校正。