2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

Thickness dependence of magnetic domain formation in La0.6Sr0.4MnO3 epitaxial thin films studied by XMCD-PEEM

We have used photoelectron emission microscopy (PEEM) and X-ray magnetic circular dichroism (XMCD) to study the effect of thin film thickness on the magnetic domain formation in La_0.6Sr_0.4MnO₃ samples that were epitaxially grown on stepped SrTiO₃ (0 0 1) substrates. The magnetic image exhibited a stripe structure elongated along the step direction, irrespective of film thickness, suggesting that uniaxial magnetic anisotropy induced by step-and-terrace structures plays an important role in the magnetic domain formation. Additional domains evolved gradually with increasing film thickness. In these domains, the direction of magnetization differed from the step direction due to biaxial magneto-crystalline anisotropy. The evolution of additional magnetic domains with increasing film thickness implies that a competition exists between the two anisotropies in LSMO films.     

Magnetic properties of co-sputtered Tb-Co2FeAl films with perpendicular anisotropy

We present a systematic study on magnetic properties of co-sputtered Tb-Co₂FeAl (TCFA) films. The TCFA films with suitable Tb content have perpendicular magnetic anisotropy (PMA). The PMA deteriorates with both decreasing film thickness and high temperature annealing. Under a certain thickness, the perpendicular coercivity of the TCFA films with PMA can be reduced down to 60 Oe, which is comparable with normal soft ferromagnets. After annealing at 100 °C, a large remanence squareness of 0.95 is observed in the TCFA film with 33% Tb and a thickness of 30 nm.     

Epitaxial strain-induced magnetic anisotropy in Sm3Fe5O12 thin films grown by pulsed laser deposition

Sm₃Fe₅O₁₂ thin films of various thicknesses were grown on a (0 0 1)-oriented Gd₃Ga₅O₁₂ substrate by pulsed laser deposition. The crystal structure of the films was strongly dependent on film thickness. The lattice was strained for thinner films due to a lattice mismatch between the film and substrate. This lattice strain was relaxed when the film thickness exceeded a critical thickness of around 660 Å. It is suggested that the epitaxial strain induces uniaxial magnetic anisotropy with an out-of-plane magnetic easy axis.     

Analysis of checkerboard pattern in ultrathin magnetic films

We discuss the magnetostatic energy of checkerboard domain structures in ultrathin magnetic films (of a few monolayer thickness) and in an atomic monolayer using simple magnetostatic considerations where the easy direction of magnetization is perpendicular to the film. The checkerboard domain size, D, the domain-wall width, ω, the ratio f of the uniaxial surface anisotropy, K_s, to the dipolar energy and the binding energy, (BE), have been calculated numerically with the variational parameter δ and the number of atomic layers, n_l, as parameters.     

Effect of nanoparticle size on magnetic damping parameter in Co92Zr8 soft magnetic films

Co₉₂Zr₈(50 nm)/Ag(x) soft magnetic films have been prepared on Si (111) substrates by oblique sputtering at 45°. Nanoparticle size of Co₉₂Zr₈ soft magnetic films can be tuned by thickening Ag buffer layer from 9 nm to 96 nm. The static and dynamic magnetic properties show great dependence on Ag buffer layer thickness. The coercivity and effective damping parameter of Co₉₂Zr₈ films increase with thickening Ag buffer layer. The intrinsic and extrinsic parts of damping were extracted from the effective damping parameter. For x=96 nm film, the extrinsic damping parameter is 0.028, which is significantly larger than 0.004 for x=9 nm film. The origin of the enhancement of extrinsic damping can be explained by increased inhomogeneity of anisotropy. Therefore, it is an effective method to tailor magnetic damping parameter of thin magnetic films, which is desirable for high frequency application.     

Structure,magnetic properties and magnetostriction of Fe81Ga19 thin films

The structure, magnetic properties and magnetostriction of Fe₈₁Ga₁₉ thin films have been investigated by using X-ray diffraction analysis, scanning electron microscope (SEM), vibrating sample magnetometer and capacitive cantilever method. It was found that the grain size of as-deposited Fe₈₁Ga₁₉ thin films is 50–60 nm and the grain size increases with increase in the annealing temperature. The remanence ratio (M_r/M_s) of the thin films slowly decreases with increase in the annealing temperature. However, the coercivity of the thin films goes the opposite way with increase in the annealing temperature. A preferential orientation of the Fe₈₁Ga₁₉ thin film fabricated under an applied magnetic field exists along 〈1 0 0〉 direction due to the function of magnetic field during sputtering. An in-plane-induced anisotropy of the thin film is well formed by the applied magnetic field during the sputtering and the formation of in-plane-induced anisotropy results in 90° rotations of the magnetic domains during magnetization and in the increase of magnetostriction for the thin film.     

A new TiW seed layer for SmCo5 films with perpendicular magnetic anisotropy

A new seed layer TiW is proposed for SmCo₅ films with perpendicular magnetic anisotropy. The influence of a TiW seed layer on the microstructure and the surface morphology of Cu underlayer are studied. The grain size and surface roughness dependence of Cu underlayer on the thickness and the annealing of the TiW seed layer are also investigated. The improvement in the perpendicular magnetic properties of SmCo₅ film from the TiW seed layer is approved. The results show that a 5 nm Ti₃W₇ seed layer improves the microstructure and surface morphology of Cu underlayer, and significantly improves the perpendicular magnetic properties of SmCo₅ film. The diffusion barrier and a high melting point of the TiW seed layer are regarded as the physical mechanism of the improvement for SmCo₅ film with perpendicular magnetic anisotropy.     

La0.8Ca0.2MnO3/SrTiO3薄膜厚度对其结构及磁学性能的影响

采用多种X射线衍射技术和磁电阻测量技术研究了不同厚度的La_0.8Ca_0.2MnO₃/SrTiO₃ (LCMO/STO)薄膜的应变状态及其对磁电阻性能的影响.结果表明，在STO(001)单晶衬底上生长的LCMO薄膜沿［00l］取向生长.LCMO薄膜具有伪立方钙钛矿结构，随着薄膜厚度的增加，面内晶格参数增加，垂直于面内的晶格参数减小,晶格参数a和b相近，略小于c.LC 关键词： X射线衍射 微结构 应变 物理性能     

Role of crystal orientation on the magnetic properties of CoFe2O4 thin films grown on Si (1 0 0) and Al2O3 (0 0 0 1) substrates using pulsed laser deposition

We report the influence of crystal orientation on the magnetic properties of CoFe₂O₄ (CFO) thin films grown on single crystal Si (1 0 0) and c-cut sapphire (Al₂O₃) (0 0 0 1) substrates using pulsed laser deposition technique. The thickness was varied from 200 to 50 nm for CFO films grown on Si substrates, while it was fixed at 200 nm for CFO films grown on Al₂O₃ substrates. We observed that the 200 and 100 nm thick CFO-Si films grew in both (1 1 1) and (3 1 1) directions and displayed out-of-plane anisotropy, whereas the 50 nm thick CFO-Si film showed only an (1 1 1) orientation and an in-plane anisotropy. The 200 nm thick CFO film grown on an Al₂O₃ substrate was also found to show a complete (1 1 1) orientation and a strong in-plane anisotropy. These observations pointed to a definite relation between the crystalline orientation and the observed magnetic anisotropy in the CFO thin films.     

Thickness induced magnetic anisotropic properties of Tb-Fe-Co thin films

The influence of Tb₂₅Fe₆₁Co₁₄ thin film thicknesses varying from 2 to 300 nm on the structural and magnetic properties has been systematically investigated by using of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, magnetization, and magneto-optic Kerr effect microscopy measurements. Thin film growth mechanism is pursued and controlled by ex-situ X-ray refractometry measurements. X-ray diffraction studies reveal that the Tb₂₅Fe₆₁Co₁₄ films are amorphous regardless of thin films thicknesses. The magnetic properties are found to be strongly related to thickness and preferred orientation. With an increase in film thickness, the easy axis of magnetization is reversed from in-plane to out-of-plane direction. The change in the easy axes direction also affects the remanence, coercivity and magnetic anisotropy values. The cause for the magnetic anisotropy direction change from in-plane to out-of-plane can be related to the preferred orientation of the thin film which depends on the large out-of-plane coercivity and plays an important role in deciding the easy axes direction of the films. According to our results, up to the 100 nm in-plane direction is dominated over the whole system under major Fe-Fe interaction region, after that point, the magnetic anisotropy direction change to the out-of-plane under major Tb-Fe/Tb-Co interaction region and preferred orientation dependent perpendicular magnetic anisotropic properties become more dominated with 2.7 kOe high coercive field values.     

Nanostructure and excellent magnetic properties of Co19.35Fe53.28Hf7.92O19.35 films

This letter reports the novel nanostructure and excellent magnetic properties of Co_19.35Fe_53.28Hf_7.92O_19.35 films with varying thicknesses. Among the samples investigated, the film with a thickness of 432 nm exhibits the most excellent magnetic properties: high saturation magnetization, , low coercivity, , and high hard-axis anisotropy field of . The magnetic permeability remains almost stable up to 3 GHz and reaches a maximum at the ferromagnetic resonant frequency of 4.024 GHz. The excellent magnetic characteristics of this film in addition to a very high electrical resistivity of 3569 μΩ cm make it ideal for uses in high-frequency applications of micromagnetic devices. It reveals that these superior properties are ascribed to the formed peculiar nanostructure. A magnetic phase separation appears to occur strongly as the film thickness increases over 437 nm, which, in turn, modifies the high-frequency behavior.     

La0.67Ca0.33MnO3薄膜中的矫顽力随膜厚与衬底的变化

系统研究了衬底为SrTiO3和LaAlO3上的La0.67Ca0.33MnO3薄膜中的矫顽力随厚度和应变的变化。结构分析表明薄膜为（001）方向织构，而且薄膜中的晶粒尺寸随着薄膜厚度的减小而减小。磁测量表明矫顽力先随着膜厚的减小而增加，在t=10-25nm附近到达一极大值。随后，矫顽力随厚度的减小而降低。还得出矫顽力的大小与测量方向有关：t≥25nm (t≤10nm)时，难磁化方向的矫顽力大于（小于）易磁化方向的矫顽力。据此，我们提出：在厚膜（t≥25nm）中，矫顽力变化由畴壁钉扎机制决定；在超薄膜（t≤10nm）中，则与磁畴的形核机制有关。根据t= 5、10、25、400nm的LCMO/STO薄膜的初始磁化曲线，以及t=5，50nm的LCMO/LAO薄膜的小磁滞回线的测量，我们对薄膜中矫顽力机制作了验证，并且还讨论了钉扎和形核机制发生的非均匀区的尺寸。     

Dependence of magnetic anisotropy of the La0.67Ca0.33MnO3 films on substrate and film thickness

Strain in the La_0.67Ca_0.33MnO₃ films has been tuned by varying substrate and film thickness, and its effects on magnetic anisotropy are studied based on the measurements of isothermal magnetization. Measuring the strain in the films by the out-of-plane lattice parameter (c), we found a strong dependence of the magnetic anisotropy constant (Ku) on strain. Ku decreases linearly from ∼−1.1×10⁶ erg/cm³ for c=0.763 nm to 1.2×10⁶ erg/cm³ for c=0.776 nm, corresponding to a change from tensile strain to compressive strain. Positive Ku signifies a uniaxial anisotropy with the easy axis perpendicular to the film plane, while negative Ku demonstrates an anisotropy of the easy plane character. Smaller or larger c leads a decrease or increase in Ku, which indicates the presence of other effects in addition to those associated with strain. Three distinctive processes for the magnetization are observed along the hard magnetic axis of the films on (001)SrTiO₃, suggesting a possibility of strain relaxation even in ultra-thin films.     

Depth dependence of Néel wall pinning on amorphous CoxSi1−x films with diluted arrays of elliptical antidots

Diluted arrays of elliptical antidots have been fabricated by optical lithography, electron beam lithography and plasma etching on amorphous Co₇₄Si₂₆ magnetic films with a well-defined uniaxial anisotropy. The magnetic behavior of two identical antidot arrays but with different hole depth in comparison with film thickness has been studied by transverse magneto-optical Kerr effect. Significant differences appear in the coercivity depending on whether the magnetic film is completely perforated or not, indicating a much more effective domain wall pinning process when the depth of the holes is smaller than the magnetic film thickness.     

Magnetic properties of a Pt/Co2FeAl/MgO structure with perpendicular magnetic anisotropy

Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl（CFA）/MgO multilayers are studied to understand perpendicular magnetic anisotropy（PMA） of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization（M s） changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied.     

Effects of oblique-incidence evaporation on magnetic properties of Fe20Ni80/Fe70Co30 bilayer film

Evaporative deposition at oblique incidence is shown to enhance the magnetic anisotropy of an Fe₂₀Ni₈₀ magnetic film and induce magnetic anisotropy in an overlying, strongly isotropic Fe₇₀Co₃₀ film. This deposition method for the formation of an underlayer of several lattice parameters in thickness and semi-hard overlayer of a few thousands Angstroms in thickness achieves a significant change in the magnetization process and strong suppression of the coercive forces of Fe₇₀Co₃₀ in the hard magnetization direction. Soft magnetization of the Fe₇₀Co₃₀ overlayer is not achieved when one of the layers is deposited at oblique incidence. It is anticipated that shape magnetic anisotropy is responsible in part for the magnetic anisotropy induced in both in Fe₂₀Ni₈₀ under- and Fe₇₀Co₃₀ overlayer by oblique incidence evaporation.     

Multilayer Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 thin films for tunable microwave applications

Bi_1.5Zn_1.0Nb_1.5O₇/Ba_0.6Sr_0.4TiO₃/Bi_1.5Zn_1.0Nb_1.5O₇ tunable multilayer thin film has been fabricated by pulsed laser ablation and characterized. Phase composition and microstructure of multilayer films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The film has very smooth surface with RMS roughness of 1.5-2 nm and grain size of 100-150 nm. Total film thickness has been measure to be 375 nm. The BZN thin films at 300 K, on Pt(1 1 1)/SiO₂/Si substrate showed zero-field dielectric constant of 105 and dielectric loss tangent of 0.002 at frequency of 0.1 MHz. Thin films annealed at 700 °C shows the dielectric tunability of 18% with biasing field 500 kV/cm at 0.1 MHz. The multilayer thin film shows nonferroelectric behavior at room temperature. The good physical and electrical properties of multilayer thin films make them promising candidate for tunable microwave device applications.     

Influence of the nitrogen contents on the permeability characteristics and soft magnetic properties of FeHfN films

High permeability magnetic films can enhance the inductance of thin-film inductors in DC-DC converters. In order to obtain high permeability, the uniaxial anisotropy and coercivity should be as low as possible. This study employed dc reactive magnetron sputtering to fabricate nanocrystalline FeHfN thin films. The influence of the nitrogen flow on the composition, microstructure, and permeability characteristics, as well as magnetic properties was investigated. Increasing the nitrogen content can alter FeHfN films from amorphous-like to crystalline phases. The magnetic properties and permeability depend on variations in the microstructure. With the optimum N₂/Ar flow ratio of 4.8% (N₂ flow: 1.2 sccm), low anisotropy (H_K = 18 Oe), low coercivity (H_C = 1.1 Oe) and high permeability (μ′ > 600 at 50 MHz) were obtained for fabrication of a nanocrystalline FeHfN film with a thickness of around 700 nm. Such as-fabricated FeHfN films with a permeability of over 600 should be a promising candidate for high-permeability ferromagnetic material applications.     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.