场致发射阴极碳纳米管的热化学气相沉积法低温生长

结合丝网印刷和过滤阴极真空电弧法、离子束溅射方法，在普通玻璃衬底上制备催化剂图案，采用低温热化学气相沉积法(CVD)生长碳纳米管/纤维(CNTs)薄膜.研究了不同种类催化剂对CNTs薄膜生长及其场发射的影响.结果表明，在a-C:Co,Ni-Cu和Cu三种催化剂上没有获得明显的CNTs，在外加电场小于4.4V/μm时没有观察到场发射；而在Ni-Fe及Ni-Cr两种催化剂上获得了大量的CNTs，并且表现出良好的场发射性能，开启电场为2.5V/μm，这种热CVD有简单、低温等优点，在CNTs场发射显示器的阴极制备中有潜在的应用价值.     

类富勒烯纳米晶CNx薄膜及其场致电子发射特性

利用微波等离子体增强化学气相沉积技术制备出了CN_x薄膜,并利用x射线光电子能谱、x射线衍射、扫描电子显微镜和Raman光谱等测试手段对所制备的CN_x薄膜的微结构和成分进行了分析.研究了其场致电子发射特性.发现薄膜的结构和场发射特性与反应系中的甲烷、氮气及氢气的流量比有关,当甲烷、氢气及氮气流量比为8/50/50 sccm时,制备的薄膜具有弯曲层状的纳米石墨晶体结构（类富勒烯结构）和很好的场发射特性.场发射阈值电场降低至1.1V/μm.当电场为5.9V/μm时,平 关键词： 类富勒烯 x薄膜')" href="#">CN_x薄膜 场致电子发射 微波等离子体增强化学气相沉积     

多层纳米AlGaN薄膜制备及其场发射性能

本文采用激光脉冲沉积系统在SiC基底上制备了GaN/AlN/GaN多层纳米结构薄膜,探索了多层纳米薄膜量子结构增强场发射性能.X射线衍射和扫描电子显微镜结果表明,已成功制备出了界面清晰、结晶良好的GaN/AlN/GaN多层纳米薄膜.场发射测试结果表明:多层纳米薄膜结构相对于GaN和AlN单层纳米薄膜,其场发射性能得到显著提升.其开启电场低至0.93V/μm,电流密度在5.5V/μm时已经能够达到30mA/cm~2.随后进一步分析了纳米结构增强场发射机理,电子在GaN/AlN/GaN多层纳米薄膜结构中的量子阱中积累使其表面势垒高度显著下降,并通过共振隧穿效应进一步提高电子的透过概率,从而使场发射性能极大提高.研究结果将为应用于高性能场发射器件的纳米薄膜材料的制备提供一种好的技术方案.     

类富勒烯纳米晶CNx薄膜及其场致电子发射特性

利用微波等离子体增强化学气相沉积技术制备出了CNx薄膜,并利用x射线光电子能谱、x射线衍射、扫描电子显微镜和Raman光谱等测试手段对所制备的CNx薄膜的微结构和成分进行了分析.研究了其场致电子发射特性.发现薄膜的结构和场发射特性与反应系中的甲烷、氮气及氢气的流量比有关,当甲烷、氢气及氮气流量比为8/50/50sccm时,制备的薄膜具有弯曲层状的纳米石墨晶体结构(类富勒烯结构)和很好的场发射特性.场发射阈值电场降低至1.1V/μm.当电场为5.9V/μm时,平均电流密度达70μA/cm2,发射点密度大于1×104cm-2.     

电化学方法制备ZnO纳米颗粒掺杂类金刚石薄膜及其场发射性能研究

采用液相电化学沉积技术制备了ZnO纳米颗粒掺杂的类金刚石(DLC)薄膜, 研究了ZnO纳米颗粒掺杂对DLC薄膜场发射性能的影响. 利用X射线光电子能谱、透射电子显微镜、Raman光谱以及原子力显微镜分别对薄膜的化学组成、 微观结构和表面形貌进行了表征. 结果表明: 薄膜中的ZnO纳米颗粒具有纤锌矿结构, 其含量随着电解液中Zn源的增加而增加. ZnO纳米颗粒掺杂增强了DLC薄膜的石墨化和表面粗糙度. 场发射测试表明, ZnO纳米颗粒掺杂能提高DLC薄膜的场发射性能, 其中Zn与Zn+C的原子比为10.3%的样品在外加电场强度为20.7 V/μm时电流密度达到了1 mA/cm². 薄膜场发射性能的提高归因于ZnO掺杂引起的表面粗糙度和DLC薄膜石墨化程度的增加.     

纳米金刚石掺混纳米氧化锌的场发射特性

利用水热法制备了菊花状的氧化锌纳米棒,并进行表征,将纳米氧化锌掺入纳米金刚石中配制成电泳液,超声分散后电泳沉积到钛衬底上,再经热处理后进行场发射特性的测试.结果表明:未掺混的金刚石阴极样品的开启电场为7.3V/μm,在20V/μm的电场下,场发射电流密度为81μA/cm2;掺混后阴极样品的场发射开启电场降低到4.7~6.0V/μm,在20V/μm电场下,场发射电流密度提高到140~158μA/cm2.原因是纳米ZnO掺入后,增强了涂层的电子输运能力、增加了有效发射体数目,提高了场增强因子β,而金刚石保证了热处理后涂层与衬底的良好键合,形成了欧姆接触,降低了场发射电流的热效应.场发射电流的稳定性随掺混ZnO量的增加而下降,要兼顾场发射电流密度及其稳定性,适量掺入ZnO可有效提高纳米金刚石的场发射性能.     

类球状微米金刚石聚晶的场发射

在覆盖金属钛层的陶瓷上,采用微波等离子体化学气相沉积(MPCVD)法制备出类球状微米金刚石聚晶薄膜。利用扫描电子显微镜、拉曼光谱,X射线衍射,分析了薄膜的结构和表面形貌。测试了类球状微米金刚石聚晶膜的场致电子发射特性。开启电场仅为0.55V/μm,在2.18V/μm的电场下,其场发射电流密度高达11mA/cm2。仔细分析了膜的发射过程,发现类球状微米金刚石聚晶的结构对发射有很大影响,并对其发射机理进行了研究。     

ZnO纳米棒的低温溶液法制备、光电特性研究及其在有机/无机复合电致发光中的应用

利用水热法制备了垂直于衬底的定向生长的ZnO纳米棒,利用扫描电子显微镜及光致发光的方法对其形貌及光学特性进行了表征,利用场发射性能测试装置对ZnO纳米棒的场发射性能进行了测试.结果表明:利用水热法在较低的温度(95 ℃) 下生长了具有较好形貌和结构的ZnO纳米棒,并表现出了较好的场发射特性,当电流密度为1 μA/cm²时,开启电场是2.8 V/μm,当电场为6.4 V/μm时,电流密度可以达到0.67 mA/cm²,场增强因子为3360.稳定性测试表明,在5 h内,4.5 V/μm的电场下,其波动不超过25%.将制备的ZnO纳米棒应用到有机/无机电致发光中,其中ZnO纳米棒为电子传输层,m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) 为空穴传输层,得到了ZnO的342 nm的紫外电致发光,此发光较ZnO纳米棒光致发光的紫外发射有约40 nm的蓝移. 关键词： ZnO纳米棒 场发射 水热法 有机/无机复合电致发光     

类金刚石和碳氮薄膜的电化学沉积及其场发射性能研究

利用电化学方法在室温下成功地沉积了类金刚石(DLC)薄膜和非晶CN_x薄膜，并 对制备条件进行了讨论.通过扫描电子显微镜、傅里叶变换红外光谱技术，分析了薄膜的表面形貌和化学结合状态.场发射测量结果表明：DLC膜和非晶CN_x的开启场分别为88和 10V/μm；并且在23V/μm的电场下，DLC膜和非晶CN_x膜的发射电流密度分别达到10 和037mA/cm². 关键词： 电化学沉积 类金刚石薄膜 x薄膜')" href="#">CN_x薄膜 场致电子发射     

碳、碳氮和硼碳氮纳米管场发射性能的比较研究

采用高温热解法在860℃分别制备出了碳、碳氮和硼碳氮纳米管，提纯后利用丝网印刷工艺分别将它们制备成薄膜，并测试了它们的场发射性能.结果表明：碳纳米管、碳氮纳米管和硼碳氮纳米管薄膜的开启电场分别为2.22，1.1和4.4V/μm，当电场增加到5.7V/μm时，它们的电流密度分别达到1400，3000μA/cm²和小于50μA/cm².碳和碳氮纳米管薄膜的场增强因子分别为10062和11521.可见，碳氮纳米管的场发射性能优于碳纳米管，而硼碳氮纳米管的场发射性能比前两者要差.解释了这三种纳米管场发射性能差别的原因. 关键词： 碳纳米管 碳氮纳米管 硼碳氮纳米管 场发射     

白碳纳米晶薄膜及其场致电子发射特性

利用微波等离子体化学气相沉积方法,以甲烷、氢混合气体为反应气体,具有钛镀层的玻璃作为衬底,制备了具有sp¹杂化结构的白碳纳米晶薄膜。利用X射线衍射、俄歇电子能谱,以及扫描电子显微镜对薄膜结构进行了表征。以白碳纳米晶薄膜为阴极,以镀有ITO透明导电薄膜玻璃为阳极,采用二极管结构,测试了白碳纳米晶薄膜的场致电子发射特性。开启电场为2.5 V/μm,在电场为5 V/μm时的电流密度为200μA/cm²。对白碳纳米晶薄膜生长机理,以及其场致电子发射机制进行了讨论。     

Enhanced field emission and patterned emitter device fabrication of metal-tetracyanoquinodimethane nanowires array

Ag(TCNQ) and Cu(TCNQ) nanowires were synthesized via vapor-transport reaction method at a low temperature of 100 °C. Field emission properties of the as-obtained nanowires on ITO glass substrates were studied. The turn-on electric fields of Ag(TCNQ) and Cu(TCNQ) nanowires were 9.7 and 7.6 V/μm (with emission current of 10 μA/cm²), respectively. The turn-on electric fields of Ag(TCNQ) and Cu(TCNQ) nanowires decreased to 6 and 2.2 V/μm, and the emission current densities increased by two orders at a field of 8 V/μm with a homogeneous-like metal (e.g. Cu for Cu(TCNQ)) buffer layer to the substrate. The improved field emission is due to the better conduct in the nanowires/substrate interface and higher internal conductance of the nanowires. The patterned field emission cathode was then fabricated by localized growing M-TCNQ nanowires onto mask-deposited metal film buffer layer. The emission luminance was measured to be 810 cd/m² at a field of 8.5 V/μm.     

Low-macroscopic field emission from silicon-incorporated diamond-like carbon film synthesized by dc PECVD

Silicon-incorporated diamond-like carbon (Si-DLC) films were deposited via dc plasma-enhanced chemical vapor deposition (PECVD), on glass and alumina substrates at a substrate temperature 300 °C. The precursor gas used was acetylene and for Si incorporation, tetraethyl orthosilicate dissolved in methanol was used. Si atomic percentage in the films was varied from 0% to 19.3% as measured from energy-dispersive X-ray analysis (EDX). The binding energies of C 1s, Si 2s and Si 2p were determined from X-ray photoelectron spectroscopic studies. We have observed low-macroscopic field electron emission from Si-DLC thin films deposited on glass substrates. The emission properties have been studied for a fixed anode-sample separation of 80 μm for different Si atomic percentages in the films. The turn-on field was also found to vary from 16.19 to 3.61 V/μm for a fixed anode-sample separation of 80 μm with a variation of silicon atomic percentage in the films 0% to 19.3%. The turn-on field and approximate work function are calculated and we have tried to explain the emission mechanism there from. It was found that the turn-on field and effective emission barrier were reduced by Si incorporation than undoped DLC.     

Synthesis and characterization of ZnO nano/microfibers thin films by catalyst free solution route

Zinc oxide (ZnO) nano/microfibrous thin films were successfully synthesized by a catalyst free solution route on glass and Si substrates. X-ray diffraction study revealed the formation of ZnO nanofibers of hexagonal crystalline structure. The texture coefficient of different planes varied with annealing temperature and that of the (0 0 2) plane was the highest for films annealed at temperature 873 K. Scanning electron micrograph showed the well formation of ZnO nano/microfibers with an average diameter 500 nm and having an average aspect ratio 150. UV–Vis–NIR spectroscopic study for the films deposited on glass substrates showed the high transmittance in the visible and near-infrared region. It was also observed that the band gap energy decreased as the films were annealed at higher temperature. The band gap energies of nanostructured ZnO thin films were determined to be in the range 3.03–3.61 eV. The photoluminescence study showed an UV emission peak at 397 nm, a visible blue–green emission peak at 468 nm and a green emission peak at 495 nm. Field emission properties of nanofiber ZnO thin film showed considerably low turn-on field around 1.4 V/μm. The emission current was as high as 70 μA at the field of 3.6 V/μm.     

Synthesis of ZnO films with a special texture and enhanced field emission properties

ZnO films with special textures are fabricated on Mo-coated Al₂O₃ ceramic substrates by the catalyst-free electron beam evaporation method, and the as-deposited films are treated by hydrogen plasma. It is found that the surface morphologies of the films are changed significantly after hydrogen plasma treatment and that the films consist of vertically standing and intersecting nanosheets. A lower turn-on field of 1.2 V/μm and an enhanced current density ～0.11 mA/cm² at 2.47 V/μm are achieved. The low threshold field and the high emission current density are attributed primarily to the unique shape and smaller resistivity of the ZnO nanosheet films.     

Enhanced field emission characteristics of zinc oxide mixed carbon nano-tubes films

A composite material of Zinc oxide and carbon nano-tubes (ZnO-CNTs) paste was synthesized by mixing multi-wall CNTs, ZnO nano-grains and organic vehicles. The microstructures and the morphologies of screen-printed films were characterized by field-emission scanning electron microscope. Results show that ZnO flakes geometrically matched with CNTs by filling into the interspaces of CNTs or directly covering upon CNTs. The field emission characteristics of films are found to be greatly effected by ZnO nano-grains. Especially, the turn-on electric field of ZnO-CNT film (1.17 V/μm) which is far lower than that of usual CNT films (1.70 V/μm). Furthermore, except that better emission stability is achieved, brightness and emission uniformity are notably enhanced as well. It can be speculated that the special microstructures of ZnO mixed CNT films dominate the enhanced electrical conductivity, thermal conductivity, and effective emitters.     

Growth and field emission properties of globe-like diamond microcrystalline-aggregate

The globe-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti mental layer was used as substrate. The fabricated diamond was evaluated by Raman scattering spectroscopy, X-ray diffraction spectrum (XRD), and scanning electron microscope (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the globe-like diamond microcrystalline-aggregates exhibited good electron emission properties. The turn-on field was only 0.55 V/μm, and emission current density as high as 11 mA/cm² was obtained under an applied field of 2.9 V/μm for the first operation. The growth mechanism and field emission properties of the globe-like diamond microcrystalline-aggregates are discussed relating to microstructure and electrical conductivity.     

The effect of substrate surface roughness on ZnO nanostructures growth

The ZnO nanowires have been synthesized using vapor-liquid-solid (VLS) process on Au catalyst thin film deposited on different substrates including Si(1 0 0), epi-Si(1 0 0), quartz and alumina. The influence of surface roughness of different substrates and two different environments (Ar + H₂ and N₂) on formation of ZnO nanostructures was investigated. According to AFM observations, the degree of surface roughness of the different substrates is an important factor to form Au islands for growing ZnO nanostructures (nanowires and nanobelts) with different diameters and lengths. Si substrate (without epi-taxy layer) was found that is the best substrate among Si (with epi-taxy layer), alumina and quartz, for the growth of ZnO nanowires with the uniformly small diameter. Scanning electron microscopy (SEM) reveals that different nanostructures including nanobelts, nanowires and microplates have been synthesized depending on types of substrates and gas flow. Observation by transmission electron microscopy (TEM) reveals that the nanostructures are grown by VLS mechanism. The field emission properties of ZnO nanowires grown on the Si(1 0 0) substrate, in various vacuum gaps, were characterized in a UHV chamber at room temperature. Field emission (FE) characterization shows that the turn-on field and the field enhancement factor (β) decrease and increases, respectively, when the vacuum gap (d) increase from 100 to 300 μm. The turn-on emission field and the enhancement factor of ZnO nanowires are found 10 V/μm and 1183 at the vacuum gap of 300 μm.     

Field emission property of printed CNTs-mixed ZnO nanoneedles

ZnO nanoneedles were synthesized via thermal evaporation method without any catalyst. Scanning electron microscopy and transmission electron microscopy investigations showed that these products presented a nanoneedle structure. To enhance the field emission (FE) properties of screen printed ZnO nanoneedles, a given amount (0.05 g) carbon nanotubes (CNTs) mixed with (0.5 g) ZnO nanoneedles paste via screen printed method and heat-treatment at (600 °C, 500 °C and 450 °C) was presented. The CNTs-mixed ZnO nanoneedles heat-treated at 450 °C had the lowest turn-on field of 3.75 V/μm, highest field emission current of 0.16 mA at 7.5 V/μm and highest β of 830. An efficiency FE enhancement of 450 °C sample was attributed to melioration of conductance between ZnO nanoneedles and ITO surface by CNTs.