低密度聚乙烯热压成型过程中的空间电荷

借助开路热刺激放电(TSD)电流及原位实时电荷TSD和电荷等温衰减测量，研究了低密度聚乙烯(LDPE)在热压成型过程中所产生的空间电荷特性.结果表明具有良好室温稳定性的成型电荷被束缚在两类陷阱能级中：浅阱和深阱，其陷阱中心深度分别约为0.92eV和1.31eV.初步的分析进一步表明了它们应该分别位于试样的表层和体内，为近表面陷阱和体陷阱. 关键词： 低密度聚乙烯(LDPE) 热压成型 空间电荷 热刺激放电(TSD)     

ZnO/SiO2 复合薄膜的光学性能

采用溶胶-凝胶法在玻璃衬底上制备ZnO/SiO₂复合薄膜,分别用XRD、TEM、SEM对样品的结构和形貌进行表征,并研究了不同ZnO含量对复合薄膜透过率及荧光特性的影响。结果表明,样品经500 ℃退火处理生成了SiO₂和ZnO,其晶粒尺寸为18.7 nm,薄膜具有双层结构。复合薄膜的透过率随着其中ZnO含量的增加而降低,禁带宽度减小,光学吸收边红移。样品在355 nm波长激发下产生了384 nm的紫外发射峰和440 nm的蓝光发射带,并随ZnO含量的增加而增强,它们分别来自ZnO的电子-空穴复合发光和缺陷发光,及ZnO/SiO₂复合薄膜双层结构的缺陷发光。     

线性低密度聚乙烯中空间电荷陷阱的能量分布与空间分布的关系

使用激光感应压力波法和热刺激放电技术,系统地研究了直流高压作用下线性低密度聚乙烯(LLDPE)半导性电极试样中空间电荷的形成和演变及电荷陷阱分布和退极化过程.在直流高压作用下试样中空间电荷的分布明显地表现为两电极同极性电荷快速对称注入的特征,半导性电极与LLDPE的界面近乎呈现欧姆接触特征.LLDPE中的电荷陷阱分布表现出体内为浅陷阱、表层为深陷阱的特征.半导性电极与LLDPE薄片间的压合条件或电极材料对LLDPE表层的掺杂显著地影响表层陷阱的能量分布,导致表层中较深陷阱的深度和密度减小、较浅陷阱的密度增大.在整个短路退极化过程中,试样中正、负电荷的中心分别向距它们较近的电极迁移,而在开路退极后期则表现为与短路时不同的行为、被表层深陷阱再俘获的电荷脱阱后向背电极迁移. 关键词： 线性低密度聚乙烯 空间电荷 陷阱分布 热刺激放电     

以表面等离子体为媒介的ZnO薄膜发光增强特性研究

采用两步法制备Si基Ag/ZnO双层结构薄膜,研究了Ag覆盖层的厚度和生长温度T对ZnO近带边发光强度的影响.对于厚度为100 nm的ZnO薄膜,发现Ag覆盖层的最佳厚度仅为8 nm,此时双层薄膜相对于单层ZnO薄膜的发光增强因子η达到最大值8.1;同时还发现,在最佳Ag层厚度下,生长温度T≥300 ℃时生长Ag所获Ag/ZnO双层薄膜的ZnO发光强度比生长温度T≤200 ℃时生长的双层薄膜样品大一倍以上,η ≈ 18.结合对双层薄膜表 关键词： 表面等离子体共振 复合薄膜     

厚度对非极性聚合物薄膜驻极体电荷储存及电荷动态特性的影响

以Du Pont公司的商用Teflon FEP A型薄膜为例，通过热脉冲技术、等温表面电位衰减测量和开路热刺激放电电流谱分析等实验结果，讨论了经常温和高温电晕充电后样品厚度对薄膜驻极体的沉积电荷密度、薄膜驻极体的内电场、体电导率以及电荷储存稳定性的影响.通过热脉冲技术组合电导率温度曲线的测量，研究了在不同温度条件下样品厚度对沉积电荷层的平均电荷重心移动的影响.结果表明：在充电参数一定的条件下，随着膜厚的降低，储存电荷密度上升，但电荷稳定性有所下降.因此，合理地调控薄膜厚度，可以有效地优化驻极体的电荷储存能 关键词： 厚度 驻极体 电荷储存能力 电荷稳定性     

壳聚糖/LaF3 ∶ Eu3+纳米复合粒子的简易合成及发光特性

在水溶液中采用化学共沉淀法制备了壳聚糖/LaF₃ ∶ Eu³⁺纳米复合粒子。通过透射电子显微镜(TEM),X射线衍射(XRD),傅立叶变换近红外(FT-IR)光谱对样品进行了表征。结果表明:所得纳米复合粒子大小在 20 nm左右,粒径均匀,表面包覆的壳聚糖使其易溶于水,并具备了与生物蛋白偶联的多个基团。测量了该纳米复合粒子的激发光谱与发射光谱,详细说明了各发光峰对应能级的跃迁及其发光机理,分析了不同掺杂浓度对其相对发光强度的影响。结果表明:当 Eu³⁺离子掺杂摩尔分数为 10%时,样品的相对发光强度达到最大值。最后介绍了壳聚糖/LaF₃ ∶ Eu³⁺纳米复合粒子与荧光蛋白 FITC偶联的方法,以表明其在生物学中潜在的应用价值。     

人工调控微结构压电驻极体的热稳定性和电荷动态特性

利用表面带有周期性结构的硬质模板,通过冷压工艺将周期结构图案复制到多孔聚四氟乙烯(PTFE)薄膜表面,再经过热黏合工艺与致密氟化乙丙烯共聚物(FEP)薄膜复合,制备出了高度有序的微孔结构复合膜,并用电晕充电的方法对复合膜进行极化处理,最终获得氟聚合物复合膜压电驻极体.借助对这类复合膜压电驻极体介电谐振谱的测量,得到了材料的杨氏模量.并利用等温热老化工艺对它们的压电系数d33的热稳定性进行了考察.最后通过短路热刺激放电谱的测量和分析,讨论了该复合膜在热老化处理后的电荷动态 关键词： 有序结构 压电驻极体 压电性 电荷动态特性     

钛酸锶钡薄膜的室温光学性能研究

采用溶胶-凝胶法制备了(Ba0.75Sr0.25)TiO3薄膜,研究了不同退火温度下样品的物相结构、薄膜的光致发光性能和光学透过率。结果表明:室温下非晶钛酸锶钡薄膜在蓝光激发下具有明显的发光现象,发光波长范围是500～650 nm,峰值在525 nm附近。延长非晶态薄膜的退火时间能够显著提高样品的发光强度,且发光强度随薄膜厚度增加而增大。晶态薄膜有微弱的发光现象。透射谱测试结果表明,钛酸锶钡薄膜在可见光范围内具有良好的光学透过率。     

CVD金刚石薄膜探测器性能研究

通过实验测量和理论分析, 从载流子动力学角度研究了用于脉冲辐射探测的CVD金刚石薄膜探测器的适用结构、电荷收集效率和时间响应性能. 结果表明, CVD金刚石薄膜可以制成均匀型结构的探测器; 薄膜中的缺陷会降低探测器的电荷收集效率, 探测器的电荷收集效率随场强增大而增大直至饱和. 已研制的CVD金刚石探测器电荷收集时间可达719ps, 在2.5V/μm场强下达到饱和, 电荷收集效率 达60.5%; 晶格散射是影响探测器时间响应的主要因素, 选用大晶粒甚至单晶金刚石薄膜可以提高探测器时间响应.     

Zn$lt;sub$gt;1-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;Mg$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;O薄膜的光致发光特性研究

采用脉冲激光沉积方法在单晶Si（100）衬底上制备出c轴取向的Zn_1-xMg_xO单晶薄膜,通过荧光光谱仪研究了薄膜的光致发光特性.实验结果表明,Mg含量增加,Zn_1-xMg_xO单晶薄膜的紫外发光峰蓝移,发光峰强度减弱,缺陷发光强度增强.同时发现,由于Mg的掺杂,引入了一些束缚能较大的局域束缚态.对于氧气氛下制备的样品,实验发现紫外峰和绿光带发光峰同时增强,但是R值减小,紫外峰红移.对绿光发光机理研究发现,绿光发光带主要与锌空位、氧间隙（O_i）或锌位氧（O_Zn）等缺陷有关,它是由多个缺陷发光峰组成,各缺陷发光峰强度相对变化导致了绿光发光带的整体移动. 关键词： 1-xMg_xO薄膜')" href="#">Zn_1-xMg_xO薄膜 光致发光 脉冲激光沉积     

Sodium beta-alumina thin films as gate dielectrics for A1GaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

<正>Sodium beta-alumina（SBA） is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al₂O₃ as the precursors.The X-ray diffraction（XRD） spectrum reveals that the deposited thin film is amorphous.The binding energy and composition of the deposited thin film,obtained from the X-ray photoelectron spectroscopy（XPS） measurement,are consistent with those of SBA.The dielectric constant of the SBA thin film is about 50.Each of the capacitance-voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN.The interface trap density of metal-insulator-semiconductor high-electron-mobility transistor（MISHEMT） is measured to be（3.5～9.5）×10¹⁰ cm^-2·eV^-1 by the conductance method.The fixed charge density of SBA dielectric is on the order of 2.7×10¹² cm^-2.Compared with the AlGaN/GaN metal-semiconductor heterostructure high-electronmobility transistor（MESHEMT）,the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However,the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from—5.5 V to—3.5 V.From XPS results,the surface valence-band maximum（VBM-E_F） of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition.The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum （VBM-E_F）,the reduction of interface traps and the effects of sodium ions,and/or the fixed charges in SBA on the two-dimensional electron gas（2DEG）.     

有机层界面对双层有机发光二极管复合效率的影响

建立了双层有机发光二极管中载流子在有机层界面复合的无序跳跃理论模型.由于有机分子材料的空间及能带结构的无序性，采用刚体模型处理有机层界面问题是不恰当的，而采用无序跳跃模型比较合理.复合效率及复合电流由载流子跳跃距离、有机层界面的有效势垒高度及该界面处的电场强度分布所决定：在双层器件ITO/α-NPD/Alq₃/Al中，当所加电压小于19.5V时，复合效率随着载流子跳跃距离的增加而增加，而大于19.5V时，复合效率随着其距离的增加而减少；复合效率随着有机层界面有效势垒高度的增加而增加； 关键词： 有机层界面 双层有机发光二极管 复合效率 有效势垒高度 无序跳跃模型     

Computer simulation of migration processes in the reaction center of PS2 during stationary laser excitation

We observed experimentally the nonlinear dependence of fluorescence of photosynthesizing organisms on the density of the flux of photons of exciting stationary radiation from an He−Cd-laser (λ=440 nm). A model of a photosynthetic unit was developed that takes account of the structure of the reacting center (RC) of PS2, the processes of migration of the energy of laser excitation from a light-collection antenna (LCA) to the reaction center with subsequent separation of charges at it, the processes of recombination of charges in the RC, and the reverse migration of energy from the RC to the LCA. Within the framework of this model we explained the experimentally observed nonlinear dependence of fluorescence on the density of the flux of exciting-radiation photons and evaluated the contribution of recombination fluorescence to the overall fluorescence of the LCA. To whom correspondence should be addressed. Reported at the Second International Scientific and Technical Conference on Quantum Electronics, Minsk, November 23–25, 1998. Belarusian State University, 4, F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 5, pp. 722–725, September–October, 1999.     

Experiment and simulation of space charge suppression in LDPE/MgO nanocomposite under external DC electric field

In this paper, space charge dynamics under DC electric field of −100 kV/mm in low-density polyethylene (LDPE) and its nanocomposite containing a small amount of MgO nanoparticles were measured using an improved pulsed electro-acoustic (PEA) system. Unlike negative packet-like space charge accumulating in LDPE films, no remarkable space charge was observed in LDPE/MgO nanocomposite films, which indicated that the introduction of MgO nanoparticles played a key role on the space charge suppression. Different with current qualitative models, this paper describes space charge suppression on the basis of simulation using the bipolar charge transport model, which featured bipolar charges injection, transport, trapping, recombination, and extraction process. It was shown from the simulation that trap depth, trap concentration, local electric field and charge injection barrier height were all significant factors on the space charge suppression process. A deeper trap depth in LDPE/MgO nanocomposites made it easier for traps to capture mobile carriers. And a larger trap concentration effectively slowed down the whole carrier movement although there seemed a trap concentration threshold less than 30 Cm⁻³, above which this effect became slight. In addition, both the high permittivity of LDPE/MgO nanocomposites and low local electric field in the vicinity of cathode led to a larger injection barrier height based on the Schottky injection law, which would tremendously block the charge injection. At last, the suppression mechanism of space charge formation in the LDPE/MgO nanocomposites is presented.     

Effects of crystallinity on the space charge properties of polyethylene

In this paper, three kinds of annealing methods with different cooling rates are used to prepare low-density polyethylene (LDPE) samples with different microstructure in crystallinity. The effects of crystallinity on space charge properties are investigated. It was found that homo-charges are easier to accumulate in high rate cooling sample and hetero-charges are easier to accumulate near cathode in low rate cooling sample. It was also found that charge movement and neutralization occurs with the increases of the applied field and the voltage applying duration. Based on these results, the influence of crystallinity on space charge accumulation is emphasized.     

Surface polished of bulk methylammonium lead tribromide single crystal

Organic-inorganic halide perovskite materials have been demonstrated with wide applications in optoelectronics and ionization radiation detection. For bulk as-grown crystals, the existence of surface cracks and defects can significantly increase charges recombination and reduce the performance of the device. Herein, we polished the crystal surfaces with both mechanical and chemical mechanical methods at room temperature. After been chemical-mechanical polished, the crystal surface with root mean square roughness about 0.5 nm was obtained. Optical transmission and photoluminescence spectra indicate that chemical mechanical polishing technology can effectively reduce the density of crystal surface defects. The achieved low leakage current density on the surface and bulk crystal is 0.05 nA mm⁻² and 0.07 nA mm⁻², respectively. Furthermore, the current-voltage curve under visible photons and X-ray photons reveals that surface polishing treatment can suppress the charges recombination and increase the charges transportation.     

Enhancing the performance of thin film CdS/PbS photovoltaic solar cells

This work investigates dependence of the short-circuit current density, open-circuit voltage, fill factor and efficiency of a thin film CdS/PbS solar cell on thickness of transparent conductive oxide (TCO) layer, thickness of window layer (CdS), concentration of uncompensated acceptors (width of space-charge region), carrier lifetime in PbS and the reflectivity from metallic back contact. The effect of optical losses, front and rear recombination losses as well as the recombination losses on space-charge region are also considered in this study. As a result, by thinning the front contact layer indium tin oxide from 400 to 100 nm and window layer (CdS) from 200 to 100 nm it is possible to reduce the optical losses from 32 to 20%. The effect of electron lifetime on the internal and external quantum efficiency can be neglected at high width of the space-charge region. The maximum current density of 18.4 mA/cm² is achieved at wide space-charge region (concentration of uncompensated acceptors = 10¹⁵ cm^?3) and the longest lifetime (τ_n = 10^?6 s) where the optical and recombination losses are about 55%. The maximum efficiency of 5.17%, maximum open-circuit voltage of 417 mV and approximately fixed fill factor of 74% are yielded at optimum conditions such as: electron lifetime = 10^?6 s; concentration of uncompensated acceptors = 10¹⁶ cm^?3; thickness of TCO = 100 nm; thickness of CdS = 100 nm; velocity of surface and rear recombination = 10⁷ cm/s and thickness of absorber layer = 3 μm. When the reflectance from the back contact is 100%, the cell parameters improve and the cell efficiency records a value of 6.1% under the above conditions.     

Patterns at the onset of electroconvection in freely suspended smectic films

We report the results of experiments on electrically driven convection that occurs in a thin, freely suspended film of smectic A liquid crystal when an electric field is applied in the plane of the film. Convection in a vortex pattern is found above a well-defined critical voltage. The film behaves as a two-dimensional isotropic liquid: neither its thickness nor the director field are modified by the flow. We present measurements of the critical voltage at the onset of convection in two experimental configurations—one which allows the injection of charges into the film from the electrodes, and one which does not. When injection is present, the critical voltage for the onset of flow increases monotonically with increasing frequency of applied field. With no injection, there is no instability at DC and the critical voltage diverges there. The nature of the flow pattern observed at onset changes with frequency. Below a certain frequency the film flows in vortices that extend over the width of the film; above this frequency the flow is confined to two lines of smaller vortices localized along the electrodes. We present a simple discussion of the mechanisms which drive the convection.     

Luminescence induced by elastic deformation of ZnS:Mn nanoparticles

When the thin film of ZnS:Mn nanoparticles deposited on a glass substrate is elastically deformed by applying a load, then initially the mechanoluminescence (ML) intensity increases with time, attains a peak value I_m at a particular time t_m, and later on it decreases with time. The rise and decay characteristics of the ML produced during release of the load are also similar to those produced during the application of load. Similar rise, occurrence of peak and then decrease in ML intensity are also found, when the film is deformed impulsively by dropping a steel ball of small mass from a low height; however, in this case, the time durations for the occurrence of ML and decay time of ML are very short. In the cases of loading and impulsive deformation ,after t_m, initially the ML intensity decreases at a fast rate and then at a slow rate, in which the decay time of fast decrease is equal to the time-constant for rise of pressure and the decay time for slow decrease is equal to the relaxation time of the surface charges. In the case of loading, the peak intensity I_m and the total intensity I_T of ML increase quadratically with the magnitude of applied pressure; however, in the case of impulsive deformation, both the I_m and I_T increase linearly with the height through which the ball is dropped on to the sample. In the case of deformation of the samples at a fixed strain rate, I_m should increase linearly with the applied pressure. The elastico ML in ZnS:Mn nanoparticles can be understood on the basis of the piezoelectrically-induced electron detrapping model, in which the local piezoelectric field near the Mn²⁺ centres reduces the trap-depth, and therefore, the detrapping of filled electron traps takes place, and subsequently the energy released non-radiatively during the electron-hole recombination excites the Mn²⁺ centres and de-excitation gives rise to the ML. The equal number of photons emitted during the application of pressure, release of pressure, and during the successive applications of pressure, indicates that the detrapped electron-traps get filled during the relaxation of the surface charges induced by the application and release of pressure because the charge carriers move to reduce the surface charges. On the basis of the piezoelectrically-induced electron detrapping model, expressions are derived for different characteristics of the ML of ZnS:Mn nanoparticles and a good agreement is found between the theoretical and experimental results. The expressions explored for the dependence of ML intensity on several parameters may be useful in tailoring the suitable nanomaterials capable of exhibiting ML during their elastic deformation. The values of the relaxation time of surface charges, time-constant for the rise of pressure, and the threshold pressure can be determined from the measurement of the time-dependence of ML. It seems that the trapping and detrapping of charge carriers in materials can be studied using ML.     

Recombination of U 92 + ions with electrons

Recombination of fully stripped U⁹²⁺ ions with electrons has been investigated at the Experimental Storage Ring (ESR) in Darmstadt. Absolute recombination rate coefficients have been measured for relative energies from 0 to 33 eV. For energies greater than 20 meV the experimental result is well described by the theory for radiative recombination (RR). Below 20 meV the experimental rate increasingly exceeds the RR calculation as observed previously in the recombination of light bare ions as well as of Bi⁸³⁺. This low-energy rate enhancement is shown to scale as Z^2.6 for bare ions, where Z is the atomic number of the ion. The U⁹²⁺ recombination rate enhancement is insensitive to changes of the electron density. Variation of the magnetic guiding field strength from 80 mT to 120 mT resulted in oscillations of the recombination rate at 0 eV. The oscillations are partly attributed to changes of the transverse electron temperature accompanying the change of the magnetic guiding field strength; partly they may be caused by uncompensated small changes of the interaction angle between the two beams. Received 1st March 2001 and Received in final form 20 April 2001