In-Situ High Pressure Raman Spectrum and Electrical Property of PbMoO4

In-situ high pressure Raman spectra and electrical conductivity measurements of scheelite-structure compound PbMoO4 are presented. The Raman spectrum of PbMoO4 is determined up to 26.5 GPa on a powdered sample in a diamond anvil cell （DAC） under nonhydrostatic conditions. The PbMoO4 gradully experiences the trans- formation from the crystal to amorphous between 9.2 and 12.5 GPa. The crystal to amorphous transition may be due to the mechanical deformation and the crystalographic transformation. Furthermore, the electrical conductivity of PbMoO4 is in situ measured accurately using a microcircuit fabricated on a DAC based on the van der Pauw method. The results show that the electrical conductivity of PbMoO4 increases with increases of pressure and temperature. At 26.5 GPa, the electrical conductivity value of PbMoO4 at 295K is 1.93 - 10-4 S/cm, while it raises by one order of magnitude at 430K and reached 3.33 - 10-3 S/cm. However, at 430K, compared with the electrical conductivity value of PbMoO4 at 26.5 GPa, it drops by about two order magnitude at 7.4 GPa and achieves 2.81 × 10^-5 S/cm. This indicates that the effect of pressure on the electrical conductivity of PbMoO4 is more obvious than that of temperature.     

A study on the electrical property of HgSe under high pressure

Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressures. The result shows that HgSe has a pressure-induced transition sequence from a semimetal to a semiconductor to a metal, similar to that in HgTe. Several discontinuous changes in conductivity are observed at around 1.5, 17, 29 and 49GPa, corresponding to the phase transitions from zinc-blende to cinnabar to rocksalt to orthorhombic to an unknown structure, respectively. In comparison with HgTe, it is speculated that the unknown structure may be a distorted CsCl structure. For the cinnabar-HgSe, the energy gap as a function of pressure is obtained according to the temperature dependence of conductivity. The plot of the temperature dependence of conductivity indicates that the unknown structure of HgSe has an electrical property of a conductor.     

Electronic and Optical Properties of Rock-Salt AIN under High Pressure via First-Principles Analysis

Electronic and optical properties of rock-salt AIN under high pressure are investigated by first -principles method based on the plane-wave basis set. Analysis of band structures suggests that the rock-salt AIN has an indirect gap of 4.53 eV, which is in good agreement with other results. By investigating the effects of pressure on the energy gap, the different movement of conduction band at X point below and above 22.5 GPa is predicted. The optical properties including dielectric function, absorption, reflectivity, and refractive index are also calculated and analyzed. It is found that the rock-salt AIN is transparent from the partially ultra-violet to the visible light area and hardly does the transparence affected by the pressure. Furthermore, the curve of optical spectrum will shift to high energy area （blue shift） with increasing pressure.     

Effect of pressure on electronic and thermoelectric properties of magnesium silicide: A density functional theory study

We study the effect of pressure on electronic and thermoelectric properties of Mg_2Si using the density functional theory and Boltzmann transport equations. The variation of lattice constant, band gap, bulk modulus with pressure is also analyzed. Further, the thermoelectric properties(Seebeck coefficient, electrical conductivity, electronic thermal conductivity) have been studied as a function of temperature and pressure up to 1200 K. The results show that Mg_2Si is an n-type semiconductor with a band gap of 0.21 eV. The negative value of the Seebeck coefficient at all pressures indicates that the conduction is due to electrons. With the increase in pressure, the Seebeck coefficient decreases and electrical conductivity increases. It is also seen that, there is practically no effect of pressure on the electronic contribution of thermal conductivity.The paper describes the calculation of the lattice thermal conductivity and figure of merit of Mg_2Si at zero pressure. The maximum value of figure of merit is attained 1.83 × 10~(-3) at 1000 K. The obtained results are in good agreement with the available experimental and theoretical results.     

In-Situ Measurement of Electrical Character of PbTe at High Pressure and High Temperature

There is a widespread interest in lead telluride (PbTe) as a good thermoelectric material. We report the temperature dependence of thermopower S(T) and resistance R(T) for PbTe at the different pressures of from 1.8GPa to 5 GPa obtained by using the cubic anvil high pressure apparatus. With increasing pressure, R(T) and S(T) decrease. The effect of pressure on R(T) is larger than that on S(T). The power factor that is determined by thermopower and resistivity increases with increasing pressure. This method is an efficient tool for synthesizing good thermoelectric materials at high pressure and high temperature.     

Phase Transition of FeS in Terms of In-Situ Resistance Measurement

Electrical properties of stoichiometric iron sulfide （FeS） are investigated under high pressure with a designed diamond anvil cell. The process of phase transition is reflected by changing the electrical conductivity under high pressure, and the conductivity of FeS with the NiAs structure is found to be much smaller than other phases. Two new phase transitions without structural change are observed at 34.7 GPa and 61.3 GPa. The temperature dependence of the conductivity is found to be similar to that of a semiconductor when the pressure is higher than 35 GPa     

Phase Transition of Graphitic-C3N4 under High Pressure by In Situ Resistance Measurement in a Diamond Anvil Cell

In situ resistance measurement of Graphitic-C3N4 has been performed under high pressure in a diamond anvil cell. The result reveals that there are changes of electron transport behaviour. As the pressure increases from ambient to 30 GPa, three abnormal resistance changes can be found at room temperature and two are found at 77K. The abnormal resistance dropped at 5 GPa is close to the phase transition pressure from the P6m2 structure to the p structure predicted by Lowther et al. [Phys. Reg. B 59 (1999) 11683] Another abnormal change of resistance at 12 GPa is related to the phase transition from g-C3N4 to cubic-C3N4 [Teter and Hemley, Science 271 (1990) 53].     

Shock temperature and reflectivity of precompressed H_2O up to 350 GPa:Approaching the interior of planets

Using a combination of static precompression and laser-driven shock compression, shock temperature and reflectivity of H_2O have been measured up to 350 GPa and 2.1×10~4 K. Here, two calibration standards were applied to enhance temperature measurement reliability. Additionally, in temperature calculations, the discrepancy in reflectivity between active probe beam wavelength and self-emission wavelength has been taken into account to improve the data's precision.Precompressed water's temperature–pressure data are in very good agreement with our quantum molecular dynamics model,suggesting a superionic conductor of H_2O in the icy planets' deep interior. A sluggish slope gradually approaching Dulong–Petit limit at high temperature was found at a specific heat capacity. Also, high reflectivity and conductivity were observed at the same state. By analyzing the temperature–pressure diagram, reflectivity, conductivity and specific heat comprehensively at conditions simulating the interior of planets in this work, we found that as the pressure rises, a change in ionization appears; it is supposedly attributed to energetics of bond-breaking in the H_2O as it transforms from a bonded molecular fluid to an ionic state. Such molecular dissociation in H_2O is associated with the conducting transition because the dissociated hydrogen atoms contribute to electrical properties.     

Pressure-induced enhancement of optoelectronic properties in PtS_2

PtS_2, which is one of the group-10 transition metal dichalcogenides, attracts increasing attention due to its extraordinary properties under external modulations as predicted by theory, such as tunable bandgap and indirect-to-direct gap transition under strain; however, these properties have not been verified experimentally. Here we report the first experimental exploration of its optoelectronic properties under external pressure. We find that the photocurrent is weakly pressuredependent below 3 GPa but increases significantly in the pressure range of 3 GPa–4 GPa, with a maximum ～ 6 times higher than that at ambient pressure. X-ray diffraction data shows that no structural phase transition can be observed up to26.8 GPa, which indicates a stable lattice structure of PtS_2 under high pressure. This is further supported by our Raman measurements with an observation of linear blue-shifts of the two Raman-active modes to 6.4 GPa. The pressure-enhanced photocurrent is related to the indirect-to-direct/quasi-direct bandgap transition under pressure, resembling the gap behavior under compression strain as predicted theoretically.     

Mechanical and thermodynamic properties of cubic YH_2 under high pressure:Prediction from first-principles study

First-principles calculations are used to investigate the mechanical and thermodynamic properties of cubic YH2 at different pressures and temperatures. The generalized gradient approximation （GGA） with Perdew-Burke-Ernzerhof （PBE） method is used to describe the exchange-correlation energy in the present work. The calculated equilibrium lattice constant a and bulk modulus B are in good accordance with the available experimental values. According to the Born-Huang criteria for mechanical stability, elastic constants are calculated from the strain-induced stress method in a pressure range from 0 to 67.1 GPa. Isotropic wave velocities and sound velocities are discussed in detail. It is found that the Debye temperature decreases monotonically with the increase of pressure and that YH2 has low anisotropy in both longitudinal and shear-wave velocities. The calculated elastic anisotropic factors indicate that YH2 has low anisotropy at zero pressure and that its elastic anisotropy increases as pressure increases. Through the quasi-harmonic Debye model, in which phononic effects are considered, the thermodynamic properties of YH2, such as the relations of （V-Vo）/Vo to the temperature and the pressure, the dependences of heat capacity Cv and thermal expansion coefficient a on temperature and pressure ranging from 0 to 2400 K and from 0 to 65 GPa, respectively, are also discussed.     

大功率、高效率、高消光比铒光纤多波长超荧光光源

采用改进的反射式Mach-Zehnder干涉滤波器，对双程后向结构掺铒光纤超荧光光源(DPB SFS) 分别进行光谱分割和光谱预分割，构建了两种结构的多波长超荧光光纤光源（MW SFS），波长间隔为～0.8 nm时，在1550 nm附近（1542～1559 nm）20个波长的功率波动小于0.5 dB其中前者消光比高达27 dB；后者消光比～18 dB，在泵浦光功率为72.8 mW时，最大输出功率25.3 mW，光光转换效率高达34.8%改变Mach-Zehnder干涉仪的臂长差，采用光谱预分割技术，得到1550 nm附近波长间隔～0.4 nm、消光比～16 dB的50个波长输出     

高能量高峰值功率激光系统的稳定性问题研究

针对高能量高峰值功率激光系统建立了相应的理论分析模型和计算程序,并针对放大系统的稳定性进行了分析,同时还对放大链路中的B积分、频谱漂移、泵浦光和信号光之间的时间同步抖动进行了模拟分析.分析结果表明：采用两级放大结构,有利于提高系统的稳定性；同时需要严格控制全系统B积分累积,建议全系统B积分的累积值小于2,超过2的B积分累积意味着更多的注入能量,如果泵浦光和信号光之间的同步时间抖动控制在±0.2 ns之内,输出稳定性可控制在rms2％之内.     

B-C-N Compound Synthesized Under High Temperature and High Pressure

Crystalline hexagonal B(N 1 m x C x ) and cubic B-C-N compounds have been synthesized from a precursor produced from melamine and boric acid by application of high temperature and high pressure. The synthesized products were characterized by X-ray diffraction. The lattice parameters for the hexagonal crystal are a=2.506 Å, c=6.657 Å, and that for the cubic crystal is a=3.596 Å. The X-ray photoelectron spectra of the B-C-N compound indicate the presence of B-N, C-N, C-C, and B-C bonds, which suggests that boron, carbon, and nitrogen atoms all bond with one another and that the B-C-N crystal is a compound in which the three kinds of atoms are mixed atomically. The composition of the B-C-N compound is B 0.47 C 0.23 N 0.30 . A strong absorption band at 1000～1120 cm m 1 attributable to the cubic B-C-N phase is observed in the infrared spectrum. The photoluminescence spectrum of hexagonal B-C-N powder measured at room temperature features a broad peak centered at 374 nm, corresponding to the band-edge emission of h-B-C-N, and is similar to that of w-GaN.     

应用于高速轮轨交通的高温超导同步直线电机研究

为实现高速铁路列车突破600km/h的速度极限,本文提出了一种与现有轮轨交通兼容的高温超导同步直线电机方案,并通过有限元方法建立了高温超导同步直线电机的仿真模型.设计并制作了小型实验样机,其定子由三相铜绕组与硅钢材质的铁轭构成,使用二代高温超导材料YBCO带材绕制车载磁体.通过实验方法验证了模型的有效性,并用该模型研究了高温超导线圈回路电流、线圈匝数和气隙对电机推进力和法向力等电磁力特性的影响规律.本文的研究结果为高温超导同步直线电机在轮轨交通领域中的应用提供了可行性依据.     

高性能9xx nm大功率半导体激光器（英文）

为了改善9xx nm高功率半导体激光器的性能,对n包层和p包层的掺杂分布进行了调整,以减小激光器的内部损耗。同时为了减小有源区载流子的泄漏,在有源区和波导层之间引入了高能量带隙GaAsP。设计并制作了内部损耗为1.25 cm-1的高功率激光器。器件可靠性工作的最大输出功率为26.5 W。当输出功率为10.5 W时,最大电光功率转换效率为72.4%,斜率效率为1.16 W/A。     

High Pressure and High Temperature Studies on Manganese Oxides

High pressure and high temperature quench experiments on f -MnO 2 , Mn 2 O 3 and sol gel derived manganese oxides have been carried out to identify any new phases to which the materials may transform under high pressure and high temperature conditions. Results of ESR, DTA and TGA investigations on sol gel derived manganese oxide have shown it to be hausmannite Mn 3 O 4 , instead of n -Mn 2 O 3 as reported earlier in the literature. The sol gel derived manganese oxide transforms to n -Mn 2 O 3 when heated above 700°C. Sol gel derived Mn 3 O 4 , when quenched from 5 GPa and temperature range 800-1200°C, gives a mixture of Mn 3 O 4 (hausmannite) and a phase having CaMn 2 O 4 (marokite)-type structure. f -MnO 2 undergoes partial amorphization when pressure-quenched from 8 GPa at room temperature. The high pressure and high temperature quench experiments up to 5 GPa and 700°C showed that the decomposition temperature of f -MnO 2 increases with pressure. The new phase reported by Liu (1976) from diamond-anvil cell (DAC) experiments on pyrolusite MnO 2 is identified to be a low-density polymorph f -MnO 2 . This unusual result of formation of low-density f -MnO 2 , having an open structure at high pressure and high temperature, is probably due to quenching of a non-equilibrium phase in Liu's (1976) laser-heated DAC experiment.     

高质量高效率参量光的获得

分析了泵浦光为光强在时空上不均匀和高度有限性分布的高斯光波时，对光学参量发生过程的不利影响，提出了解决这种不利影响，以获得高质量，高效率参量光的方案。     

高剂量与高能量离了注入研究进展

综述了离子束材料实验室在高剂量与高能量离子注入研究方面的新进展,包括高剂量离子注入动态靶的模拟计算ＭＡＣＡ程序、多能离子注入深度分布计算、ＭｅＶ离子引起的ＨＯＰＧ表面操作、ＭｅＶ离子诱变右旋糖酐生产菌种、高剂量离子注入在４５号钢表面形成耐腐蚀的保护层以及在高速工具钢上形成含有大量超细碳化物的耐磨层. The development of high dose ion implantation and high energy ion implantation at the Ion Beam Application Group of IHIP in recent years is reviewed.     

镁橄榄石和顽辉石的高温高压合成

 用国产六面顶压机，在温度为1 000～1 500 ℃和压力为2～5 GPa的高温高压条件下，对氧化镁（MgO）和二氧化硅（SiO₂）混合粉末样品进行了处理。通过对所得产物的观察与X射线衍射分析结果表明，在较宽的压力范围内，可以得到镁橄榄石（Mg₂SiO₄）单晶体和顽辉石（MgSiO₃）单晶体。讨论了地幔物质镁橄榄石（Mg₂SiO₄）和顽辉石（MgSiO₃）的生成条件、生长特性及相变关系。     

高温高压下硬水铝石状态方程研究

 在金刚石压砧装置上,用氧化铝膜作绝热层,借助同步辐射和双面激光加温系统,分析了硬水铝石在高温高压下的结构变化,并分别用理论和实验的方法得出了其结构参数,得到了样品在不同压力温度下的体模量。这对于人们认识和研究地壳结构和地球内部物质的演化具有重要意义。研究发现,在常温和高温时其压缩率有明显不同,在高温高压范围内,其晶格常数和晶胞体积的变化非常接近样品在高压常温下的情况;而在高温低压范围内,情形和常温时有较大差别。在实验过程中并没有发现相变的产生。