含缺陷碳纳米管及碳纳米豆荚静动力特性模拟研究

采用分子动力学方法,对含双空位及多空位缺陷碳纳米管进行静动力特性模拟研究.首先讨论了双原子空位缺陷以及多原子空位缺陷对碳纳米管的准静态力学性质的影响,然后讨论了缺陷以及轴向预应力对碳纳米豆荚内C60分子振荡动力学的影响.研究表明,相对于无缺陷碳纳米管,含不同类型双原子空位缺陷碳纳米管的极限应力、极限应变和弹性模量都大幅下降;当碳纳米管缺陷原子较多,缺陷连接在一起形成类似裂纹之后,使得碳纳米管轴向抗压性能大幅降低,裂纹沿周向发展相比于裂纹沿轴向发展,其抗压能力下降得更多,这类似于含裂纹的壳体模型结构抗压性能的下降;缺陷碳纳米豆荚中C60分子的振荡频率受到缺失的碳原子数的影响,单原子空位缺陷使得C60分子的振荡频率增大,但随着空位数的增多, C60分子的振荡频率会逐渐减小;当缺陷碳纳米豆荚存在轴向预应力时, C60分子的振荡不仅受到缺陷影响,同时还受到轴向预应力的影响,这使得C60分子振荡变得更为复杂.     

Pressure-induced enhancement of optoelectronic properties in PtS_2

PtS_2, which is one of the group-10 transition metal dichalcogenides, attracts increasing attention due to its extraordinary properties under external modulations as predicted by theory, such as tunable bandgap and indirect-to-direct gap transition under strain; however, these properties have not been verified experimentally. Here we report the first experimental exploration of its optoelectronic properties under external pressure. We find that the photocurrent is weakly pressuredependent below 3 GPa but increases significantly in the pressure range of 3 GPa–4 GPa, with a maximum ～ 6 times higher than that at ambient pressure. X-ray diffraction data shows that no structural phase transition can be observed up to26.8 GPa, which indicates a stable lattice structure of PtS_2 under high pressure. This is further supported by our Raman measurements with an observation of linear blue-shifts of the two Raman-active modes to 6.4 GPa. The pressure-enhanced photocurrent is related to the indirect-to-direct/quasi-direct bandgap transition under pressure, resembling the gap behavior under compression strain as predicted theoretically.     

智能型霍尔效应实验仪及无线联网系统

利用低功耗单片机、触摸屏、ADC及无线传输等模块,结合计算机网络技术完成了智能型霍尔效应实验仪的硬件系统设计.使用C语言设计了学生实验数据的教学管理软件,智能型霍尔效应实验仪与上位机之间的数据通信使用无线串口模块.该实验系统不但涵盖了传统的霍尔效应实验项目中全部的实验内容,还实现了实验数据的自动储存、无线传输以及上位机对上传实验数据的管理.     

Response of a Duffing—Rayleigh system with a fractional derivative under Gaussian white noise excitation

In this paper,we consider the response analysis of a Duffing-Rayleigh system with fractional derivative under Gaussian white noise excitation.A stochastic averaging procedure for this system is developed by using the generalized harmonic functions.First,the system state is approximated by a diffusive Markov process.Then,the stationary probability densities are derived from the averaged Ito stochastic differential equation of the system.The accuracy of the analytical results is validated by the results from the Monte Carlo simulation of the original system.Moreover,the effects of different system parameters and noise intensity on the response of the system are also discussed.     

Pressure-Induced Metallization Accompanied by Elongated S–S Dimer in Charge Transfer Insulator NiS_2

The insulator-metal transition triggered by pressure in charge transfer insulator NiS2 is investigated by combining high-pressure electrical transport,synchrotron x-ray diffraction and Raman spectroscopy measurements up to40-50 GPa.Upon compression,we show that the metallization firstly appears in the low temperature region at～3.2 GPa and then extends to room temperature at～8.0 GPa.During the insulator-metal transition,the bond length of S-S dimer extracted from the synchrotron x-ray diffraction increases with pressure,which is supported by the observation of abnormal red-shift of the Raman modes between 3.2 and 7.1 GPa.Considering the decreasing bonding-antibonding splitting due to the expansion of S-S dimer,the charge gap between the S-ppπ* band and the upper Hubbard band of Ni-3 d eg state is remarkabl.y decreased.These results consistently indicate that the elongated S-S dimer plays a predominant role in the insulator-metal transition under high pressure,even though the p-d hybridization is enhanced simultaneously,in accordance with a scenario of charge-gap-controlled type.     

Observation of Charge Density Wave in Layered Hexagonal Cu1.89Te Single Crystal

We report comprehensive transport, electron microscopy and Raman spectroscopy studies on transition-metal chalcogenides Cu_1.89Te single crystals. The metallic Cu_1.89Te displays successive metal-semiconductor transitions at low temperatures and almost ideal linear MR when magnetic field up to 33 T. Through the electron diffraction patterns, the stable room-temperature phase is identified as a 3 × 3 × 2 modulated superstructure based on the Nowotny hexagonal structure. The su...