Band-edge exciton fine structure of single CdSe/ZnS nanocrystals in external magnetic fields

We report a spectroscopic study of the two lowest-energy exciton levels of individual CdSe/ZnS nanocrystals under applied magnetic fields. Field-induced coupling between the bright and the dark excitonic states is directly observed in the low-temperature photoluminescence spectrum and decay and allows the determination of the angle between the nanocrystal c axis and the field. Orientation-dependent Zeeman splittings of the dark and bright exciton sublevels are measured and provide the corresponding exciton Landé factors, as well as spin-flip relaxation rates between Zeeman sublevels.     

Temperature dependence of excitonic emission in cubic CdSe thin film

A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic CdSe film was observed at low temperature. Temperature-dependent measurement was performed to obtain material parameters related to exciton-phonon interaction by fitting the experimental data to the phenomenological model. The relative contribution of both acoustic and optical phonon to the band gap shrinkage and exciton linewidth broadening are discussed. Exciton binding energy of 16±1.5 meV was determined from the Arrhenius analysis.     

Effect of exciton-phonon coupling in the calculated optical absorption of carbon nanotubes

We find that the optical properties of carbon nanotubes reflect remarkably strong effects of exciton-phonon coupling. Tight-binding calculations show that a significant fraction of the spectral weight of the absorption peak is transferred to a distinct exciton+phonon sideband, which is peaked at around 200 meV above the main absorption peak. This sideband provides a distinctive signature of the excitonic character of the optical transition. The exciton-phonon coupling is reflected in a dynamical structural distortion, which contributes a binding energy of up to 100 meV. The distortion is surprisingly long ranged, and is strongly dependent on chirality.     

Exciton-phonon coupling in indirect gap AgBr nanocrystals

The resonance Raman scattering observed in the exciton region of indirect AgBr nanocrystals with mean particle radius R ≈ 5 nm is analyzed. Considering the processes as absorption followed by emission and calculating the size dependent exciton energies by the donor-like exciton model of Ekimov et al. [1], the 1TO(L) and 2TO(L)&LO(Γ) resonance behavior can be well-reproduced. The analysis of the Raman spectral lineshape based on linear exciton-phonon coupling shows a substantial increase of coupling strength with excitation photon energy. It is attributed to enhanced acoustic and surface phonon interaction of higher exciton states.     

Photoluminescence of tetrahedral quantum-dot quantum wells

Taking into account the tetrahedral shape of a quantum-dot quantum well (QDQW) when describing excitonic states, phonon modes, and the exciton-phonon interaction in the structure, we obtain within a nonadiabatic approach a quantitative interpretation of the photoluminescence spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in contrast to the dark ground state for a spherical QDQW. The position of the phonon peaks in the photoluminescence spectrum is attributed to interface optical phonons. We also show that the experimental value of the Huang-Rhys parameter can be obtained only within the nonadiabatic theory of phonon-assisted transitions.     

单核/双壳结构CdSe/CdS/ZnS纳米晶的合成与发光性质

以巯基乙酸为稳定剂,在水溶液中合成了单核/双壳结构的CdSe/CdS/ZnS纳米晶。在内核CdSe和外壳ZnS之间的内壳CdS作为晶格匹配调节层,能够很好的改善核/壳界面处的性能,而且,最外层ZnS能够最大程度地使激子受限。用TEM和XPS对纳米晶进行了表征,并且用光致发光光谱和吸收光谱对不同核壳结构的纳米晶的发光性能进行了比较,结果表明单核/双壳结构的纳米晶具有更加优异的发光特性。     

Multiphonon Raman scattering from individual single-walled carbon nanotubes

Combinations of up to 6 zone-edge and zone-center optical phonons are observed in the Raman spectra of individual single-walled carbon nanotubes (SWNTs). These multiphonon Raman modes exhibit distinct signatures of the one-dimensional nature of SWNTs and provide information on the phonon structure, exciton-phonon coupling, and excitonic transitions in nanotubes.     

Nonlinear optical responses due to exciton-phonon interactions in strongly coupled exciton-phonon systems

The excitonic nonlinear optical responses due to exciton-phonon interactions in strongly coupled exciton-phonon systems are investigated theoretically. It is shown that the influence of exciton-phonon interactions on the nonlinear optical absorptions and Kerr nonlinear coefficients is significant as the signal field frequency detuning from the exciton frequency approaches to the optical phonon frequency. How to manipulate the nonlinear optical responses by using the control fields is also presented.Received: 16 March 2004, Published online: 4 May 2004PACS: 42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption - 42.50.Hz Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift - 42.25.Bs Wave propagation, transmission and absorption - 72.80.Le Polymers; organic compounds (including organic semiconductors)     

纳米ZnO薄膜的激子光致发光特性

报道了纳米ZnO薄膜激子光致发光(PL)与温度的关系。首先利用低压金属有机化学气相沉积(LPMOCVD)技术生长ZnS薄膜,然后将ZnS薄膜在氧气中于800℃下热氧化2h获得纳米ZnO薄膜。X射线衍射(XRD)结果表明,纳米ZnO薄膜具有六角纤锌矿多晶结构且具有择优(002)取向。室温下观察到一束强的紫外(326eV)光致发光(PL)和很弱的深能级(DL)发射。根据激子峰的半高宽(FWHM)与温度的关系,确定了激子纵向光学声子(LO)的耦合强度(ГLO)。     

Absorption and photoluminescence studies of the temperature dependence of exciton life time in lattice-matched and strained quantum well systems

We present systematic studies of the temperature dependence of linewidths and lifetimes of excitonic transitions in quantum wells grown by molecular beam epitaxy using both photoluminescence(PL) and optical absorption. The temperature ranged from 6K to room temperature. Samples under investigation were lattice-matched GaAs/AlGaAs and InGaAs/InAlAs, and strained InGaAs/GaAs and InGaAs/AlGaAs quantum wellssystems. In addition, the effects of well-size variations in GaAs/AlGaAs quantum wells were measured and analyzed. In all cases we were able to observe the excitonic transitions up to room temperature. By a careful fitting of the experimental data we separated the exciton transitions from band-to-band transitions. By deconvoluting the excitonic transitions we obtained the homogeneous and inhomogeneous linewidths. The homogeneous linewidths were used to calculate the exciton lifetimes as a function of temperature using the Heisenberg uncertainty principle. We found the lifetime decreases significantly with temperature and increases with increasing well size. These results are interpreted in terms of the exciton-phonon interaction and are expected to be very useful for the design of semiconductor optical devices operating at different temperatures.