Curie温度附近稀磁半导体(Ga,Mn)As的电学噪声谱性质

建立了自发噪声谱测量系统来研究稀磁半导体（Ga,Mn）As的电学噪声性质.通过测量（Ga,Mn）As材料的自发噪声谱,发现（Ga,Mn）As的自发涨落会随温度升高而逐渐增大,同时,外加磁场会降低（Ga,Mn）As的自发涨落,这来源于外加磁场导致的（Ga,Mn）As磁畴部分有序化.此外,不同频率的噪声随温度的变化规律有很大差异：当频率低于30 kHz的时候,噪声谱和温度的变化关系和热噪声很相似,但数值上明显大于热噪声的值;当频率在30 kHz左右的时候,噪声大小和温度成线性关系;当频率大于30 kHz以后,在相变点附近噪声大小和温度的关系出现了明显的转折,高频高温噪声的大小和热噪声的理论值非常接近.这些结果有助于深入理解（Ga,Mn）As磁性起源的物理机制. 关键词： 自旋电子学 稀磁半导体 自发涨落谱     

低温分子束外延生长的GaMnAs反射光谱的低能振荡现象

通过傅里叶变换红外光谱和光调制反射光谱技术测量了不同Mn含量的低温分子束外延生长在GaAs衬底上的GaMnAs样品的反射光谱.在低于Ga(Mn)As带边的红外反射光谱和光调制反射光谱上观测到低能振荡现象.通过分析振荡产生的原因并使用双层界面反射模型拟合了红外反射光谱的低能振荡过程,拟合结果与实验相符.研究表明,反射光谱的低能振荡是由于GaMnAs中空穴浓度的变化导致GaMnAs中的折射率发生变化,GaMnAs与衬底GaAs之间的折射率差导致了不同Mn含量的GaMnAs材料的反射谱的低能振荡现象.测量了不同 关键词： GaMnAs 反射光谱 空穴浓度 折射率     

InxGa1-xAs/GaAs量子阱应变量对变温光致发光谱的影响

利用变温光致发光(PL)研究了In0.182Ga0.818As/GaAs应变及应变补偿量子阱在77～300 K温度范围内的发光特性.随着温度T的升高,PL峰位向低能方向移动.在应力作用下In0.182Ga0.818As/GaAs量子阱的价带顶轻空穴带和重空穴带发生了劈裂.通过理论计算推导应变随温度变化对InxGa1-x...     

外磁场对(Ga,Mn)As有效g因子的影响

利用时间分辨Kerr旋光技术测量低温下稀磁半导体Ga0.937Mn0.063As中光注入极化载流子的自旋进动信号,并观察到自旋极化载流子的有效g因子值随外磁场的增强而增大的反常现象.这归结于磁场导致局域化空穴转化为非局域化空穴,从而使自发磁化强度增强,有效g因子值增大.基于此物理图像,进一步给出了(Ga,Mn)As的有效g因子与外磁场的关系式.     

基于共振腔发光二极管的DBR温度特性研究

分布式布拉格反射镜（DBR）是共振腔发光二极管（RCLED）的主要组成部分,其温度特性对RCLED的性能有着重要影响。基于650 nm红光RCLED,设计出由Al0.5Ga0.5As和Al0.95Ga0.05As组成的DBR结构。首先通过AlxGa1-xAs材料折射率的色散关系分析温度对AlxGa1-xAs材料折射率的影响,进而模拟了DBR反射谱的温度特性,得到随着温度升高DBR反射谱红移的结论,温漂速率为0.048982 nm/℃。通过MOCVD制备出30对Al0.5Ga0.5As和Al0.95Ga0.05As组成的DBR外延结构,并对其进行反射谱测试,发现随着温度升高反射谱出现了红移现象,温漂速率为0.049277 nm/℃,与模拟结果相近,验证了温度升高导致反射谱红移结论的正确性。     

二维缺陷GaAs电子结构和光学性质第一性原理研究

采用基于密度泛函理论的第一性原理方法计算了存在Ga空位缺陷和掺杂B原子的二维GaAs的能带结构、态密度和光学性质.计算结果表明空位缺陷二维GaAs显示出金属特性,B原子的引入使体系变为间接带隙半导体,禁带宽度为0.35 eV.态密度计算发现体系低能带主要由Ga的s态、p态、d态和As的s态、p态构成;高能带主要由Ga和As的s态、p态构成.掺杂B原子与存在空位缺陷的二维GaAs相比,静态介电常数相对较低,变为8.42,且易于吸收紫外光,在3.90～8.63 eV能量范围具有金属反射特性,反射率达到52%.     

温度对Al0.5Ga0.5As/AlAs分布布喇格反射器的反射谱影响

采用光学传输矩阵理论对Al0.5Ga0.5As/AlAs材料分布布喇格反射器(DBR)进行理论研究,分析了－10℃到100℃的范围内,温度变化对不同DBR结构的反射光谱影响.结果表明：随着温度的升高,传统20周期DBR的反射光谱向长波长方向移动,速率约0.05 nm/℃,其中由线热膨胀系数带来的影响小于0.001 nm/℃.当传统DBR的周期数增大时,温度对DBR光谱反射率的影响在减小,同时DBR的反射谱峰值波长发生红移.为了降低温度对DBR反射光谱的影响,提出一种新型的复式DBR结构.分析指出：该复式DBR比传统DBR有更大的反射光谱半峰宽,基本能覆盖同温度的AlGaInP LED电致发光光谱,这对提高LED的出光效率有现实意义.     

温度对Al_(0.5)Ga_(0.5)As/AlAs分布布喇格反射器的反射谱影响

采用光学传输矩阵理论对Al0.5Ga0.5As/AlAs材料分布布喇格反射器(DBR)进行理论研究,分析了-10℃到100℃的范围内,温度变化对不同DBR结构的反射光谱影响.结果表明:随着温度的升高,传统20周期DBR的反射光谱向长波长方向移动,速率约0.05 nm/℃,其中由线热膨胀系数带来的影响小于0.001 nm/℃.当传统DBR的周期数增大时,温度对DBR光谱反射率的影响在减小,同时DBR的反射谱峰值波长发生红移.为了降低温度对DBR反射光谱的影响,提出一种新型的复式DBR结构.分析指出:该复式DBR比传统DBR有更大的反射光谱半峰宽,基本能覆盖同温度的AlGaInP LED电致发光光谱,这对提高LED的出光效率有现实意义.     

(Ga,Mn)As 体系中Mn自补偿效应的第一性原理研究

基于密度泛函理论的赝势平面波方法计算了处于填隙位置磁性原子(MnI)对(Ga,Mn) As体系电子结构和磁性的影响. 计算结果表明MnI在GaAs中是施主；代替Ga位的MnGa 与MnI的自旋按反铁磁序排列；静电相互作用使MnGa，MnI倾向于形成MnGa_MnI对. MnI的存在一方面补偿了(Ga,Mn)As中的空穴，降低了空穴浓度；同时还使邻近的MnG a失活. MnI的存在对获得高居里温度的(Ga,Mn)As是极为不利的. 关键词： (Ga Mn)As 稀磁半导体 密度泛函理论     

自旋-轨道耦合对磁性绝缘体磁光Kerr效应的影响

采用单原子能级跃迁模型,导出在同时考虑自旋交换劈裂和自旋轨道耦合时磁光Kerr旋转的微观表达式,并就四能级跃迁情况,研究了磁光效应随原子基态及激发态能级自旋轨道耦合常数的变化规律.结果表明:磁光Kerr旋转角与自旋轨道耦合劈裂能量不成正比;单原子能级自旋轨道耦合常数为正或中间激发态自旋轨道耦合常数为负时,有利于提高磁光Kerr旋转. 关键词： 磁光Kerr效应 自旋轨道耦合 线性响应核 劈裂     

室温下(Ga,Mn)As中载流子的自旋弛豫特性

运用飞秒时间分辨抽运-探测克尔光谱技术,研究了室温下退火及未退火(Ga,Mn)As的载流子自旋弛豫的激发能量密度依赖性,发现电子自旋弛豫时间随激发能量密度增加而增大,而在同一激发能量密度下,退火样品比未退火样品具有更短的载流子复合时间、电子自旋弛豫时间和更大的克尔转角,显示DP机理是室温下(Ga,Mn)As的电子自旋弛豫的主导机理.退火(Ga,Mn)As的超快克尔增强效应显示其在超高速全光自旋开关方面的潜在应用价值,也为(Ga,Mn)As铁磁性起源的p-d交换机理提供了证据. 关键词： (Ga Mn)As稀磁半导体 时间分辨克尔光谱 电子自旋弛豫 DP机理     

Magnetic linear dichroism in the angular dependence of core-level photoemission from (Ga,Mn)As using hard x rays

We report a study of the electronic properties of the ferromagnetic semiconductor (Ga,Mn)As using magnetic linear dichroism in the angular dependence of Mn 2p photoemission under hard x-ray excitation. Bulk plasmon loss satellites demonstrate that the probed Mn ions are incorporated deep within the GaAs lattice, while the observed large dichroism indicates that the spectra originate from ferromagnetic substitutional Mn. Simulations of the spectra using an Anderson impurity model show that the ferromagnetic Mn 3d electrons of substitutional Mn in (Ga,Mn)As are intermediate between localized and delocalized.     

Determining the sign of g factor via time-resolved Kerr rotation spectroscopy with a rotatable magnetic field

Time-resolved Kerr rotation spectroscopy is used to determine the sign of the g factor of carriers in a semiconductor material,with the help of a rotatable magnetic field in the plane of the sample.The spin precession signal of carriers at a fixed time delay is measured as a function of the orientation of the magnetic field with a fixed strength B.The signal has a sine-like form and its phase determines the sign of the g factor of carriers.As a natural extension of previous methods to measure the (time-resolved) photoluminescence or time-resolved Kerr rotation signal as a function of the magnetic field strength with a fixed orientation,such a method gives the correct sign of the g factor of electrons in GaAs.Furthermore,the sign of carriers in a (Ga,Mn)As magnetic semiconductor is also found to be negative.     

Dependence of femtosecond time-resolved magneto-optical Kerr rotation on the direction of polarization of the probe beam

We demonstrate that the femtosecond time-resolved magneto-optical Kerr rotation oscillates with the direction of polarization of the probe beam when a sample of Al0.25Ga0.75As/GaAs multi-quantum wells is excited by a circularly polarized pump and detected by a linearly polarized probe at wavelengths from 800 to 830 nm. Analytical expressions are derived to explain the mechanism, which is in good agreement with the numerical computation and the experimental data. The results suggest that the Kerr signal can ...     

Magneto-optical Kerr effect in bilayer structures

This paper describes the magneto-optical effects and the reflectivity behaviors of bilayers based on magnetic and isotropic ()/anisotropic () layers under the condition of total internal reflection. In the framework of Green's dyadic technique, we show accurately the optical properties of anisotropic layers deposited on a substrate. We present numerical simulations which account for the variation of angle of incidence at the HeNe laser wavelength. The Kerr rotation is found to increase significantly around the optical modes in total reflection. We also discuss the importance of anisotropic effects due to the crystallization of the dielectric material () which occur in the reflectivity and Kerr rotation spectra. Received 26 January 2000     

Angle-dependent x-ray magnetic circular dichroism from (Ga,Mn)As: anisotropy and identification of hybridized states

Remarkably anisotropic Mn L2,3 x-ray magnetic circular dichroism spectra from the ferromagnetic semiconductor (Ga,Mn)As are reported. States with cubic and uniaxial symmetry are distinguished by careful analysis of the angle dependence of the spectra. The multiplet structures with cubic symmetry are qualitatively reproduced by calculations for an atomiclike d5 configuration in tetrahedral environment, and show zero anisotropy in the orbital and spin moments within the experimental uncertainty. However, hybridization with the host valence bands is reflected by the presence of a preedge feature with a uniaxial anisotropy and a marked dependence on the hole density.     

Ab initio investigation of microscopic enhancement factors in tuning the magneto-optical Kerr effect

The microscopic quantities that determine the magnitude and frequency position of peaks in the Kerr rotation spectrum are studied on the basis of first-principles band-structure theory. The transition metals Fe, Co and Ni serve as model systems. The magnitude of the magnetooptical Kerr effec (MOKE) is basically brought about by the spin-orbit (SO) coupling strength and it is shown that the Kerr rotation scales linearly with the SO-coupling. Exchange splitting (or magnetization) is found to influence the Kerr effect in a rather complicated way: enlarging the magnetization can both enhance and diminish spectral peaks. A strong effect is found for the dependence of the position of spectral peaks on the lattice spacing: a 3 to 6% increase in lattice parameters can lead to shifts of about 1 eV of the main MOKE peak.     

Element resolved spin configuration in ferromagnetic manganese-doped gallium arsenide

We report induced Ga and As moments in ferromagnetic Ga(1-x)MnxAs detected using x-ray magnetic circular dichroism at the Mn, Ga, and As L(3,2) edges. Across a broad composition range, we find As and Ga dichroism signals which indicate an As 4s moment coupled antiparallel to the Mn 3d moment, and a smaller parallel Ga 4s moment. The Ga moment follows that of Mn in both doping and temperature dependence. These results are consistent with recent predictions of induced GaAs host moments and support the model of carrier-mediated ferromagnetic ordering involving As-derived valence band states.