γ-TiAl金属间化合物面缺陷能的分子动力学研究

运用分子动力学方法，对γ-TiAl金属间化合物的面缺陷能(层错能和孪晶能)进行了研究. 计算得到γ-TiAl不同滑移系(或孪生系)的整体堆垛层错能曲线，结果表明，γ-TiAl较一般fcc晶体结构的金属可动滑移系(孪生系)的数量减少，在外界条件下呈脆性. 研究孪生系(1/6)〈112〉{111}的弛豫的整体堆垛层错(GSF)能和整体孪晶(GTF)能曲线，对不稳定层错能γ_usf、稳定层错能γ_sf和不稳定孪晶能γ_usf值进行分析，可以预知， γ-TiAl的主要变形机理为孪生系(1/6)〈112〉{111}的孪生和普通滑移系(1/6)〈110〉{111}的滑移，以及超滑移系(1/2)〈011〉{111}的滑移. 关键词： γ-TiAl')" href="#">γ-TiAl 堆垛层错能 孪晶能 分子动力学     

fcc金属表面能的各向异性分析及表面偏析的预测

本文将元素变量(φ^*和n_WS)和MAEAM相结合,从原子尺度上对10种fcc金属Cu,Ag,Au,Ni,Pd,Pt,Rh,Al,Ir和Pb的38个不同晶面的表面能进行模拟计算及各向异性分析. 结果表明,fcc金属的密排面(111)的表面能最小,则该晶粒取向优先生长,与实验结果和第一原理的LMTO-ASA计算结果一致;各个晶面的表面能均随着其他晶面与(111)晶面的夹角cosθ_(hkl)的增长而呈线性 关键词： FCC金属 MAEAM 表面能 表面偏析     

显微光谱研究半绝缘GaAs带边以上E0+Δ0光学性质

通过显微光致发光技术和显微拉曼(Raman)技术研究了半绝缘GaAs (SI-GaAs)晶体的带边附近的发光. 在光荧光谱中，观察到在高于GaAs带边0.348eV处有一个新的荧光峰. 结合Raman谱指认此发光峰来源于GaAs的E₀＋Δ₀能级的非平衡荧光发射. 同时, 通过研究E₀＋Δ₀能级的偏振、激发光强度依赖关系，以及温度依赖关系说明E₀＋Δ₀能级与带边E₀共享了共同的导带位置Γ₆，同时这也说明在GaAs中主要是导带的性质决定了材料的光学行为.同时，通过与n-GaAs和δ掺杂GaAs相比较，半绝缘GaAs晶体的E₀＋Δ₀能级的发光峰更能反映GaAs电子能级高临界点E₀＋Δ₀的能量位置和物理性质. 研究结果说明显微光致发光技术是研究半导体材料带边以上能级光学性质的一种非常有力的研究工具. 关键词： 半绝缘GaAs 显微光致发光 自旋轨道分裂     

镁基合金自由枝晶生长的相场模拟研究

利用定量相场模型, 以Mg-0.5 wt.%Al合金为例模拟了基面((0001)面)内镁基合金的等温自由枝晶生长过程. 通过研究该合金体系数值模拟的收敛性, 获得了最优化值耦合参数λ = 5.5及网格宽度Δx/W₀ = 0.4, 并在该参数下系统研究了各向异性强度和过饱和度对枝晶尖端生长速度、尖端曲率半径、Péclet数及稳定性常数σ^* 的影响. 结果表明, 由微观可解性理论得到的稳定性系数σ^* 与ε₆ 拟合值σ^*≅ ε₆ ^1.81905, 更接近理想值σ ^* (ε₆) ≅ε₆ ^1.75. 此外, 当过饱和度Ω < 0.6时, 稳定性系数σ ^* 不随ε₆ 的变化而变化, 而当Ω > 0.6时, 稳定性系数σ ^* 随着ε₆ 的增加而减小. 这反映了枝晶的生长由扩散控制向动力学控制的转变. 随着过饱和度的增加, 枝晶形貌由雪花状枝晶向圆状枝晶转变.     

Effects of an electromagnetic field on intracellular calcium oscillations in a cell with external noise

Intracellular calcium ion concentration oscillation in a cell subjected to external noise and irradiated by an electromagnetic field is considered. The effects of the intensity E₀, the polar angle θ and the frequency omega of the external electric field on steady-state probability distribution and the mean Ca²⁺ concentration, respectively, are investigated by a numerical calculation method. The results indicate that (i) variation of ω cannot affect the intracellular calcium oscillation; (ii) the steady-state probability distribution presents a meaningful modification due to the variations of E₀ and θ, while variation of θ does not affect the steady-state probability distribution under the condition of a small E₀, and E₀ cannot affect the steady-state probability distribution either when θ = π/2; (iii) the mean Ca²⁺ concentration increases as E₀ increases when θ < π/2 and, as θ increases, it first increases and then decreases. However, it does not vary with E₀ increasing when θ = π/2, but it increases with θ increasing when E₀ is small.     

自辐射场下UN2分子的光谱研究

对铀原子和氮原子分别使用相对论有效原子实势和6-311+G(d)基组, 采用优选的密度泛函B3P86方法, 研究了铀本身产生自辐射场(-0.005–0.005 a.u.)作用下UN₂基态分子的能隙E_g和谐振频率ν. 结果表明: UN₂分子在自辐射场中反对称伸缩振动频率ν₃(σ_g)和对称伸缩振动频率σ₁(σ_g)与实验值1051.1 cm^-1和1008.3 cm^-1 基本符合; E_g随自辐射场场强的增大而趋于减少, 占据轨道的电子容易被激发至空轨道而形成激发态; UN₂分子在自辐射场中趋于不稳定, N₂, O₂等更容易扩散到表面内层而腐蚀铀表面, 加剧了铀在自辐射场中的腐蚀.     

Au(110)表面结构和氧原子吸附的第一性原理研究

用密度泛函理论(DFT)研究了金属Au(110)表面结构以及氧原子的吸附状态.计算得到Au(110)-(1×2)缺列再构表面原子的弛豫分别是-15.0%(Δd₁₂/d₀)和-1.1%(Δd₂₃/d₀),表面能为52.7 meV/²,功函数Φ=5.00 eV;Au(110)-(1×3)缺列再构表面的Δd_{1 关键词： 缺列再构Au(110)表面 STM图像 氧原子吸附}     

固体核磁共振研究半晶聚-3-羟基丁酸酯和聚羟基丁酸戊酸酯的分子动力学

本文在150~370 K温度范围内,采用固体核磁共振（NMR）测定了半晶聚-3-羟基丁酸酯（PHB）,以及3-羟基戊酸酯单体质量分数分别为5%（PHBV5）和12%（PHBV12）的聚羟基丁酸戊酸酯共聚物在实验室坐标系和旋转坐标系条件下质子的自旋-晶格弛豫时间T₁和T_1ρ.通过弛豫时间随温度变化的理论拟合,分别获得上述半晶聚合物晶区和结晶区的分子动力学参数（包括E_a和τ₀）.这些结果从分子水平上阐述了PHB结构修饰和增强的原因.     

块体非晶合金的黏度与玻璃形成能力的关系

基于经典结晶理论讨论了非晶合金的晶化动力学因素和晶化热力学因素对玻璃形成能力（GFA）的影响.分析表明,合金的等温转变（TTT）曲线“鼻尖”温度T_n对应的黏度与晶化阻力因子成正比;重新加热时晶化开始温度T_x对应的黏度与晶化驱动力因子成反比.由此得到了新的GFA参数ω₀=（T_g-T₀）/（T_x-T₀）-（T_g-T₀）/（T_n-T₀）,其中T_g为玻璃转变温度,T₀为理想玻璃转变温度.统计结果显示,ω₀与临界冷却速率具有较高的相关性,R²高达09626.进一步分析表明：新提出的ω₀参数可以合理地解释过冷熔体的黏度、脆性、液相稳定性、热稳定性以及T_rg、ΔT_x、γ、γ_m、ΔT_rg、α、β、δ和φ等参数与GFA的关系. 关键词： 块体非晶合金 黏度 脆性 玻璃形成能力     

非对称量子点中磁极化子性质的磁场和温度依赖性

采用Tokuda线性组合算符法和Lee-Low-Pines变换法,研究了温度和磁场对非对称抛物量子点中强耦合磁极化子性质的影响,简捷地得到了作为量子点的横向受限强度ω₁、纵向受限强度ω₂、电子-声子耦合强度α、外磁场的回旋频率ω_c和温度参数γ的函数的磁极化子的振动频率λ、基态能量E₀和有效质量m 关键词： 非对称量子点 强耦合磁极化子 磁场和温度依赖性     

Background subtraction: I. General behaviour of Tougaard-style backgrounds in AES and XPS

An analysis is made of Tougaard-style backgrounds for homogeneous materials to show how parameters interact together and comprise the general inelastic scattering background in electron spectroscopy. It is shown that insight is usefully gained by rewriting the Tougaard universal loss function in terms of two parameters, the characteristic energy, E₁, of the exponential decay observed in multiple self-convolutes of the Tougaard universal single loss function, and the centroid energy of the single loss function. Close fits to the measured background may be made over a wide energy range for only one value of E₁ which defines a unique relation between Tougaard’s B and C values but does not give the unique values themselves. For the single value of E₁, the centroid energy may be varied such that the background subtracted spectra range from those shown by Tougaard, where the intrinsic shake-up and losses may constitute two thirds of the peak intensity, to spectra similar to those of Jo in which all of the intrinsic losses are removed. Studies of Al X-ray excited Sc, Cu, Sm and Au photoelectron spectra, each of which has an extensive range of peaks, show that the relative intensities of the peaks are unaffected by the choice of the value of even though the absolute peak areas may change by a factor of 3.     

Molecular dynamics study of anisotropic growth of silicon

Based on the Tersoff potential, molecular dynamics simulations have been performed to investigate the kinetic coefficients and growth velocities of Si(100),(110),(111), and(112) planes. The sequences of the kinetic coefficients and growth velocities are μ_((100)) μ_((110)) μ_((112)) μ_((111))and v_((100)) v_((110)) v_((112)) v_((111)), respectively, which are not consistent with the sequences of the interface energies, interplanar spacings, and melting points of the four planes. However,they agree well with the sequences of the distributions and diffusion coefficients of the melting atoms near the solid–liquid interfaces. It indicates that the atomic distributions and diffusion coefficients affected by the crystal orientations determine the anisotropic growth of silicon. The formation of stacking fault structure will further decrease the growth velocity of the Si(111) plane.     

稠苯芳杂环及其烷基质子化学位移的计算

本文提出了予测稠苯芳杂环及其烷基链上质子化学位移的计算方法。 将稠苯芳杂环化合物用凯库勒式表示,计算式为为需考虑的苯环内的乙烯基效应。σ_mi,ci为各苯环的环流效应。σ_1,Hc为各芳杂环的屏蔽效应,对杂环上质子它就是该单独芳杂环上相应质子的δ值,对苯环上质子要将它分解为各结构因素的效应,即:σ_1,He=(1/2)^d-1δ_x=y(或σ_z)+σ_c-c·σ_m,H. σ_x-y与σ_z为杂原子或其基团的屏蔽效应,σ_c=c为存在于芳杂环中的乙烯基的效应,σ_m,Hc为芳杂环的环流效应,d为对不同质子所考虑的键数。有取代基时需考虑取代基的效应。计算环上烷基质子的公式为:δ=σ_p,CH3+ασ_c,CH3+βσ_t,CH3+σ_l,G σ_l,G为稠苯芳杂环基的某级效应。     

Diffusion of W on A W(211) plane

The diffusion of W on a (211) plane of a W field emitter has been re-examined by means of the fluctuation autocorrelation method. Diffusion along channels yielded E = 16.8 ± 0.5 kcal, D₀ = (3 ± 1) × 10⁻⁵ cm² s⁻¹. For diffusion across channels E =6.6 kcal, D₀ = 4 × 10⁻⁹cm² s⁻¹ at T < 752 K, and E = 24 kcal, D₀ = 5 × 10⁻⁴ cm² s⁻¹ at T > 752 K. The results for diffusion along channels yield E and D₀ values intermediate between recent results by Wang and Ehrlich [Surf. Sci. 206 (1988) 451] using field ion microscopy (E = 19 kcal, D₀ = 7.7 × 10⁻³ cm² s⁻¹) and Tringides and Gomer [J. Chem. Phys. 84 (1986) 4049], using the same method as the present work but a larger slit (E = 13.3 kcal, D₀ = 7 × 10⁻⁷ cm² s⁻¹). The results for cross channel diffus good agreement with those of Tringides and Gomer below 752 K, where these authors stopped. The new high temperature results suggest that the channel wall exchange mechanism postulated by Tringides and Gomer for cross channel diffusion at low T gives way to diffusion by climbing over the channel walls with higher E but also higher D₀ above 752 K. Possible reasons for the discrepancies between these three sets of results and the absence of cross channel diffusion in the work of Wang and Ehrlich are briefly discussed.     

太赫兹场和倾斜磁场对超晶格电子动力学特性调控规律研究

微带超晶格在磁场和太赫兹场调控下表现出丰富而复杂的动力学行为, 研究微带电子在外场作用下的输运性质对于太赫兹器件设计与研制具有重要意义. 本文采用准经典的运动方程描述了超晶格微带电子在沿超晶格生长方向(z方向)的THz场和相对于z轴倾斜的磁场共同作用下的非线性动力学特性. 研究表明, 在太赫兹场和倾斜磁场共同作用下, 超晶格微带电子随时间的演化表现出周期和混沌等新奇的运动状态. 采用庞加莱分支图详细研究了微带电子在磁场和太赫兹场调控下的运动规律, 给出了电子运行于周期和混沌运动状态的参数区间. 在电场和磁场作用下, 微带电子将产生布洛赫振荡和回旋振荡, 形成复杂的协同耦合振荡. 太赫兹场与这些协同振荡模式之间的相互作用是导致电子表现出周期态、混沌态以及倍周期分叉等现象的主要原因.     

Electromagnetic coupling reduction in dual-band microstrip antenna array using ultra-compact single-negative electric metamaterials for MIMO application

In this paper, an ultra-compact single negative(SNG) electric waveguided metamaterial(WG-MTM) is first investigated and used to reduce the mutual coupling in E H planes of a dual-band microstrip antenna array. The proposed SNG electric WG-MTM unit cell is designed by etching two different symmetrical spiral lines on the ground, and has two stopbands operating at 1.86 GHz and 2.40 GHz. The circuit size is very compact, which is only λ_0/33.6 ×λ_0/15.1(where λ_0 is the wavelength at 1.86 GHz in free space). Taking advantage of the dual-stopband property of the proposed SNG electric WG-MTM, a dual-band microstrip antenna array operating at 1.86 GHz and 2.40 GHz with very low mutual coupling is designed by embedding a cross shaped array of the proposed SNG electric WG-MTM. The measured and simulated results of the designed dual-band antenna array are in good agreement with each other, indicating that the mutual coupling of the fabricated dual-band antenna array realizes 9.8/11.1 d B reductions in the H plane, 8.5/7.9 d B reductions in the E plane at1.86 GHz and 2.40 GHz, respectively. Besides, the distance of the antenna elements in the array is only 0.35 λ_0(where λ_0 is the wavelength at 1.86 GHz in free space). The proposed strategy is used for the first time to reduce the mutual coupling in E H planes of the dual-band microstrip antenna array by using ultra-compact SNG electric WG-MTM.     

定向凝固单晶冰的取向确定与选晶

基于六方冰晶偏振光学特性,定义了用于确定冰晶晶体取向的三个参数:光轴倾角α,消光角β和与冰晶基面(0001)面内晶体学择优方向1120与温度梯度的夹角γ,提出了定量判定冰晶晶体取向的理论基础,并在定向凝固平台上采用偏光显微镜成功实现了冰晶晶体取向的精确主动控制,获得了任意取向的单晶冰.本文成功解决了冰晶的定向凝固晶体取向确定和选择的难题,为冰晶生长过程中相关理论问题的研究提供了有效的途径.     

Cu1-xHxZr2(PO4)3中Cu2+的EPR谱和局域结构研究

本文采用Cu²⁺斜方对称电子顺磁共振（EPR）参量的高阶微扰公式计算了晶体Cu_1-xH_xZr₂（PO₄）₃中Cu²⁺的EPR参量（g因子和超精细结构常数A因子）．计算结果表明，晶体Cu_1-xH_xZr₂（PO₄）₃中[CuO₆]^10-基团的Cu-O键长分别为R_||≈0.241 nm，R_⊥≈0.215 nm，平面键角τ≈80.1°；由于对称性降低，中心金属离子基态²A_1g（θ）和²A_1g（ε）有一定程度混合，混合系数α≈0.995．所得EPR谱图的理论计算值与实验数据符合得很好．     

Influence of alkali metal superoxides on structure,electronic,and optical properties of Be_(12)O_(12) nanocage:Density functional theory study

The effect of alkali metal superoxides M_3O(M = Li,Na,K) on the electronic and optical properties of a Be_(12)O_(12) nanocage was studied by density functional theory(DFT) and time-dependent density functional theory(TD-DFT).The energy gaps(Eg) of all configurations were calculated.Generally,the adsorption of alkali metal superoxides on the Be_(12)O_(12) nanocage causes a decrease of Eg.Electric dipole moment μ,polarizability α,and static first hyperpolarizability β were calculated and it was shown that the adsorption of alkali metal superoxides on Be_(12)O_(12) increases its polarizability.It was found that the absorption of M_3 O on Be_(12)O_(12) nanocluster improves its nonlinear optical properties.The highest first hyperpolarizability(β≈ 214000 a.u.) is obtained in the K_3O–Be_(12)O_(12)nanocluster.The TD-DFT calculations were performed to investigate the origin of the first hyperpolarizabilities and it was shown that a higher first hyperpolarizability belongs to the structure that has a lower transition energy.     

外加电场和Al组分对纤锌矿AlGaN/GaN量子阱中的电子g因子的影响

研究了外加电场和垒层的Al组分对AlGaN/GaN量子阱中的横向和纵向g因子(g⊥和g//)及其各向异性(δg)的影响.纤锌矿体结构的贡献(S_//~(bulk)和g⊥)是构成g⊥=(g//-g_0)=g_//~(bulk)的主要部分,但g_//~(bulk)和g⊥的差值很小且几乎不随外加电场和Al组分改变.当外加电场的方向同极化电场的方向相同(相反)且增加时,g_//~(bulk)和g_⊥~(bulk)的强度同时增加(减小).当外加电场从-1.5×10~8 V·m~(-1)到1.5×10~8 V·m~(-1)变化时,异质结界面对g⊥的贡献(Γ_(Inter))大于0且强度缓慢增加,阱层对g⊥的贡献(Γ_W)小于0且强度也缓慢增加.然而Γ_(Inter)的强度比Γ_w大,且后者的强度随着外加电场的改变增加较快,所以δg0且强度随着外加电场的变化而减小.当垒层的Al组分增加时,如果不考虑应变效应(S_(1,2)=0),g_//~(bulk)和g⊥的强度同时减小,然而考虑应变效应后(S_(1,2)≠0),β_1g⊥和γ1(g_//~(bulk))的强度随着Al组分的增加而增加.随着垒层Al组分的增加,Γ_(Inter)和Γ_w的强度都增加,但Γ_(Inter)的强度较大且增加得较快,所以的的强度缓慢增加.g⊥的强度先随着Al组分的增加而减小,然后又随着Al组分的增加而增加,因为g⊥小于0且强度随着Al组分增加得很快.结果表明,AlGaN/GaN量子阱结构中的电子g因子及其各向异性可以被外加电场、垒层的Al组分、应变效应和量子限制效应共同调制.