Silicon and transition metal-silicides implanted with57Fe

Si(111) single crystals were implanted with⁵⁷Fe in a broad dose range in order to overlap the concentration range of bulk amorphous Fe _x Si_1−x samples. At high (≥10¹⁶ atoms/cm²) doses the measured hyperfine interaction values were found to be the same as in the bulk amorphous samples, suggesting the same Fe−Si bonding and a very similar structure for the two amorphous phases produced by different methods. A comparison of the isomer shift (δ) and quadrupole splitting (ΔE) values with the values of the stoichiometric crystalliine phases showed the same δ but different δE values indicating similar Fe−Si bonding but different atomic arrangement around the iron atom.     

Powdered rock versus solid rock comparisons in particle-induced X-ray emission measurements for planetary geochemical exploration

Grain size is an important consideration in the determination of the bulk chemistry of Martian rocks and unconsolidated materials in situ by the alpha particle X-ray spectrometer (APXS), deployed on the NASA-led Mars Science Laboratory mission. We used 2.5 MeV protons to emulate the particle-induced X-ray emission (PIXE) branch (5 MeV alphas) of the APXS. Seven polished rock slabs (igneous and sedimentary), ranging from fine- to coarse-grained, were analyzed by PIXE in their original form, then milled to powders and pressed into pellets for further analysis. The summed area (160 mm²) over 10 interrogated regions on each slab is comparable to the area interrogated on the APXS; analysis of two pellets per rock, each using a 16 mm² region, was found to be appropriate. The mean pellet/slab concentration ratio for Na, Mg, Al, Si, K, Ca, and Fe was close to 1.0 for fine-grained samples, but changed by ±10% for the coarser cases. The variability among PIXE concentration values across the 10 rock regions increased monotonically with coarseness in the rock slabs. Comparison of overall PIXE concentrations with values measured by borate-fusion WDXRF provides further quantitative support to the direct comparison of pellet and slab PIXE concentrations. This work affirms the use of the APXS on fine-grained Martian materials but recommends larger interrogation areas (including rastering) when analyzing coarser-grained materials. It also demonstrates that the presence of relatively large mineral grains (phenocrysts) or rock/mineral fragments within fine-grained materials can contribute to greater error for specific elements associated with those phenocrysts/fragments.     

氢离子注入对硅单晶电子辐照缺陷和氢泡形成的影响

以50keV和100keV能量的氢离子注入p型(100)直拉硅单晶薄膜。注入剂量为10¹⁵—2×10¹⁷H⁺/cm²。试样在HU-1300型超高压透射电子显微镜中进行电子辐照和原位加热动态观察。结果表明在20—300℃温度范围内与未注氢硅相比,注氢硅在相同的电子辐照条件下产生的电子辐照缺陷较少,电子辐照缺陷形成所需的潜伏时间较长。在电子显微镜中加热试样时于190℃开始观察到氢泡,190—220℃范围内氢泡逐渐产生并长大 关键词：     

Temperature-dependent 29Si NMR resonance shifts in lightly- and heavily-doped Si:P

Careful NMR measurements on a very lightly-doped reference silicon sample provide a convenient highly precise and accurate secondary chemical shift reference standard for ²⁹Si MAS-NMR applicable over a wide temperature range. The linear temperature-dependence of the ²⁹Si chemical shift measured in this sample is used to refine an earlier presentation of the paramagnetic (high-frequency) ²⁹Si resonance shifts in heavily-doped n-type silicon samples near the metal–nonmetal transition. The data show systematic decreases of the local magnetic fields with increasing temperature in the range 100–470 K for all samples in the carrier concentration range from 2×10¹⁸ cm⁻³ to 8×10¹⁹ cm⁻³. This trend is qualitatively similar to that previously observed for the two-orders of magnitude larger ³¹P impurity NMR resonance shifts in the same temperature and concentration ranges. The ²⁹Si and ³¹P resonance shifts are not related by a simple scaling factor, however, indicating that impurity and host nuclei are affected by different subsets of partially-localized extrinsic electrons at all temperatures.     

The temperature dependence of thermal expansion for p-type Ce0.9Fe3.5Co0.5Sb12 and n-type Co0.95Pd0.05Te0.05Sb3 skutterudite thermoelectric materials

During waste heat recovery applications, thermoelectric (TE) materials experience thermal gradients and thermal transients, which produce stresses that scale with the TE material's coefficient of thermal expansion (CTE). Thus, the temperature-dependent CTE is an important parameter for the design of mechanically robust TE generators. For three skutterudite thermoelectric compositions, n-type Co_0.95Pd_0.05Te_0.05Sb₃ (with and without 0.1 at. % cerium doping) and p-type Ce_0.9Fe_3.5Co_0.5Sb₁₂, the CTE was measured using two methods, i.e. X-ray diffraction on powder and bulk specimens and dilatometry on bulk specimens. Each bulk specimen was hot pressed using powders milled from cast ingots. Between 300?K and 600?K, the mean CTE values were 9.8–10.3?×?10^?6 K^?1 for the non-cerium-doped n-type, 11.6?×?10^?6 K^?1 for the 0.1 at. % cerium-doped n-type and from 12.7 to 13.3?×?10^?6 K^?1 for the p-type. In the literature, similar CTE values are reported for other Sb-based skutterudites. For temperatures >600?K, an unrecovered dilatational strain (perhaps due to bloating) was observed, which may impact applications. Also, the submicron particle sizes generated by wet milling were pyrophoric; thus, during both processing and characterization, exposure of the powders to oxygen should be limited.     

Channels of radiative recombination and phase transitions in a system of nonequilibrium carriers in a Si0.93Ge0.07/Si thin quantum well

The “exciton gas-plasma” transition (the Mott transition) in a Si_0.93Ge_0.07/Si thin quantum well is investigated using low-temperature photoluminescence. It is demonstrated that this transition is smooth and occurs in the concentration range from approximately 6 × 10¹⁰ to 1.2 × 10¹² cm^?2. At a temperature of 23 K and excitation densities of higher than 10 W/cm², the shape and location of the luminescence line associated with the electron-hole plasma remain unchanged with an increase in the pump density. This can indicate the occurrence of an “electron-hole gas-liquid” transition. It is shown that, in the spectrum of the quantum well, the luminescence of boron-bound excitons dominates at liquid-helium temperatures and low excitation densities, whereas the free-exciton luminescence dominates at temperatures above 10 K. The influence of the homogeneous and inhomogeneous broadening on the electron-hole plasma and exciton luminescence is discussed.     

Hall coefficients for A15 compounds: Nb-Sn and V-Si

The Hall coefficients, R_H, for A15 structure single crystal V₃Si and polycrystal V25.25 at.% Si and Nb 26 at.% Sn have been measured as functions of temperature. The data between the superconducting transition temperature, T_c, and 80 K for the Nb-Sn show a small dip centred arounf 30 K which accompanies a cubic-to-tetragonal lattice distortion commencing at about 45 K. R_H for the VSi samples, which are believed to be non-transforming, is temperature independent in the range 17–40 K and equal to 2.0 ± 0.2×10^?10m³C^?1. These result are discussed in relation to the effect of the tetragonal distortion on the band structures of these compounds.     

稀土元素Ce热引入Si单晶中及Ce在Si中的扩散系数

利用真空淀积和真空热处理(1050℃,20h)向Si单晶中引入了稀土元素Ce,热处理过程中Ce首先与Si形成合金,然后向Si中扩散,于是在Si中形成Ce的扩散层。用二次离子质谱(SIMS)技术测定了Ce的纵向相对浓度分布,并据此分析了Ce在Si中的扩散系数。并在77—450K范围内测量了扩散层的平均电导率。 关键词：     

Amorphous SiO2-Co spin glasses

Amorphous insulating SiO₂-Co films were prepared by sputtering a Si target wrapped with Co wires in a mixed Ar-O atmosphere. A spin glass transition is observed in these films and the spin glass transition temperature increases from 7.5 to 17 K as the Co concentration increases from 10 to 26 at.%. The much lower values of the effective moment (3.8 μ_B) and of the paramagnetic Curie temperature (?20 K) for all Co concentrations as compared to those reported in Co aluminosilicates suggest a greater homogeneity in the films.     

Magneto-optical Faraday and Kerr effect of orthoferrite thin films at high temperatures

Orthoferrites present, as bulk materials, reorientation transitions of their magnetic moment alignment at temperatures depending on the rare-earth (RE) ion. In particular, orthoferrites (REFeO₃) with RE = Sm, Dy, present this transition at T _SRT = 443 K and 36 K, respectively. The spectra of the complex Kerr and Faraday angle have been measured on orthoferrite thin films (RE = Sm, Dy, Y), which were prepared by pulsed laser deposition on amorphous quartz substrates. The obtained spectra exhibit contributions of both surfaces and interfaces. Propagation effects of the polarized light in the magneto-optical medium which is interpreted in terms of a simplified theoretical formalism, is also observed. For selected photon energies, temperature dependent Faraday rotation measurements, , on orthoferrite thin films (RE = Sm, Dy, Y) have been performed. A quite different thermal variation compared to the bulk magnetization has been observed. Curie temperatures are found to be close to the bulk values or slightly larger by 10 K to 20 K as in the case of DyFeO₃ and YFeO₃. For RE = Sm and Dy, increases with increasing temperature contrary to the saturation magnetization, passes through a maximum at about 460 K and vanishes with a T _C of 647±18 K, 695 K for RE = Sm and Dy respectively. Received 28 July 2000     

Novel NdCo<Subscript>5</Subscript> nanoflakes and nanoparticles produced by surfactant-assisted high-energy ball milling

High-energy ball milling has been shown to be a promising method for the fabrication of rare earth—transition metal nanopowders. In this work, NdCo₅ nanoflakes and nanoparticles have been produced by a two-stage high-energy ball milling (HEBM), by first using wet HEBM to prepare precursor nanocrystalline powders followed by surfactant-assisted HEBM. NdCo₅ flakes have a thickness below 150 nm and an aspect ratio as high as 10²–10³; the nanoparticles have an average size of 7 nm. Both the nanoparticles and nano-flakes exhibited high coercivities at low temperatures, with values at 50 K of 3 and 3.7 kOe, respectively. The high values of coercivity can be attributed to the large surface anisotropy of nanoparticles that leads to an effective uniaxial-type of behavior in contrast to the planar anisotropy of the bulk samples. Angle-dependent magnetization measurements at different temperatures were used to determine the spin reorientation transitions in the nanopowders and nanoparticles. The nanoparticles showed spin reorientation temperatures, T _SR1 = 276 and T _SR2 = 237 K which are lower when compared with the values of 290 and 245 K, respectively for bulk.     

Mg2Si的电子结构和热电输运性质的理论研究

利用全势线性缀加平面波法,对Mg₂Si的几何结构和电子结构进行了计算,得到了稳定的晶格参数以及能带和电子态密度.能带结构表明,Mg₂Si为间接带隙半导体,禁带宽度为020 eV.在此基础上利用玻尔兹曼输运理论和刚性带近似计算了材料的电导率、Seebeck系数和功率因子.结果表明,在温度为700 K时p型和n型掺杂的Mg₂Si功率因子达到最大时的最佳载流子浓度分别为7749×10¹⁹ cm^-3和 关键词： 2Si')" href="#">Mg₂Si 全势线性缀加平面波法 热电输运性质     

Specific heat of A-15 Nb3Si produced by explosive compression

The specific heat from 1.2 to 23 K has been measured on a new high T_c superconductor, A-15 Nb₃Si. The sample was prepared by explosive compression and has an onset of bulk superconductivity at 18.0 K, with a transition width of 0.7 K. The density of states for pure A-15 Nb₃Si implied from the specific heat data is 0.94 ± 0.20 states/eV-atom, ΔC/γ T_c is 2.0 ± 0.2.     

Determination of probabilities of vacancy transfer from K to L shell using K X-ray intensity ratios

K to L shell vacancy transfer probabilities (η_KL) for 26 elements in the atomic region 23≤Z≤57 were determined by measuring the I_Kβ/I_Kα intensity ratios. The targets were irradiated with γ-photons at 59.543 keV from ²⁴¹Am annular source. The K X-rays from different targets were detected with a high resolution Si(Li) detector. Theoretical values were calculated using the radiative and radiationless transition rates of these elements. The measured values of η_KL are compared with the theoretical values and data of others. The measurement vacancy transfer probabilities are least-square fitted to third-order polynomials to obtain analytical relations that represent these probabilities as a function of atomic number. The measured values of η_KL for V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Se and Br are being reported here for the first time.     

1．55μmInGaAsP及其相应量子阱结构的LP-MOCVD生长

本文研究了用低压金属有机化合物汽相外延(LP-MOCVD)技术在(100)InP衬底上生长InGaAsp体材料及InGaAP/InP量子阱结构材料的生长条件。三甲基镓(TM63)、三甲基铟(TMh)和纯的砷烷(A8H3)、磷烷(PH3)分别用作Ⅲ族和Ⅴ族源,在非故意掺杂情况下,InGaAsP材料的载流子浓度为3.6×10¹⁵cm^-3;在液氦温度和室温下,与InP晶格匹配的InGaAsP光致发光半峰宽分别为19.2meV和63meV;对外延层的组分及厚度均匀性分别进行了转靶X光衍射仪,低温光致发光和扫描电子显微镜分析,对不同阱宽的量子阱结构材料测出了由于量子尺寸效应导致光致发光波长随阱宽增加而红移现象。     

Thermal stability,magnetic and magnetocaloric properties of Gd55Co35M10 (M = Si,Zr and Nb) melt-spun ribbons

The thermal stability, magnetic and magnetocaloric properties of Gd₅₅Co₃₅M₁₀ (M = Si, Zr and Nb) melts-pun ribbons were studied. The relatively high reduced glass transition temperature (T_x1/T_m > 0.60) and low melting point (T_m) resulted in excellent glass forming ability (GFA). The Curie temperatures (T_C) of melt-spun amorphous ribbons Gd₅₅Co₃₅M₁₀ for M = Si, Zr and Nb were 166, 148 and 173 K, respectively. For a magnetic field change of 2 T, the values of maximum magnetic entropy change (−ΔS_M)^max for Gd₅₅Co₃₅Si₁₀, Gd₅₅Co₃₅Zr₁₀ and Gd₅₅Co₃₅Nb₁₀ were found to be 2.86, 4.28 and 4.05 J kg⁻¹K⁻¹, while the refrigeration capacity (RC) values were 154, 274 and 174 J kg^–1, respectively. The RC_FWHM values of amorphous alloys Gd₅₅Co₃₅M₁₀ (M = Si, Zr and Nb) are comparable to or larger than that of LaFe_11.6Si_1.4 crystalline alloy. Large values of (−ΔS_M)^max and RC along with good thermal stability make Gd₅₅Co₃₅M₁₀ (M = Si, Zr and Nb) amorphous alloys be potential materials for magnetic cooling operating in a wide temperature range from 150 to 175 K, e.g., as part of a gas liquefaction process.     

掺饵氢化非晶氧化硅1.54μm发光性质的研究

采用等离子体增强化学汽相沉积技术生长不同氧含量的氢化非晶氧化硅薄膜(a-SiO_{x∶H),离子注入铒及退火后在室温观察到很强的光致发光.当材料中氧硅含量比约为1和 1.76时,分别对应77Ｋ和室温测量时最强的1.54μm光致发光.从15到250Ｋ的变温实验显示 出三个不同的强度与温度变化关系,表明氢化非晶氧化硅中铒离子的能量激发和发光是一个 复杂的过程.提出氢化非晶氧化硅薄膜中发光铒离子来自于富氧区,并对实验现象进行了解 释.氢化非晶氧化硅中铒发光的温度淬灭效应很弱.从15到250Ｋ,光致发光强度减弱约1/2. 关键词： 铒 光致发光 氧含量}     

Capture cross section of excitons on neutral indium impurities in silicon

Studied of the photoluminescent decay of Si:In bound excitons in the temperature range 10 to 30°K show that the decay is limited by the capture of the exciton on the neutral In site. Measurements of the decay time give values for the capture cross section which change rapidly with temperature ranging between greater than 10^-13cm² at 10°K to about 10^-15cm² at 30°K.     

Bulk MgB2 superconductor with high critical current density synthesized by self-propagating high-temperature synthesis method

Pure MgBMgB2 超导体 临界密度 自我传播 预热温度 超导电性SHS method, bulk MgB₂ superconductor, superconductivityProject supported by the Natural Science Foundation of Gansu province of China (Grant No ZS032-B25-019).2005-03-187/2/2005 12:00:00 AMPure MgB2 bulk samples are successfully synthesized by self-propagatlng hlgh-temperature synthesis （SHS） method. The experiments show that the best preheating temperature is 250℃, the highest Jc values of the prepared MgB2 reach 1.5×10^6A/cm^2 （10K, 0.5T） and 1.7×10^6A/cm^2 （20K, 0T）, and the MgB2 particle sizes range from 2 to 5μm. The advantages of this method are that it is simple, economical and suitable for the manufacture of bulk MgB2 materials on industrial scale.     

Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in <Emphasis Type="Italic">p</Emphasis>-Si/SiGe/Si structures with an anisotropic <Emphasis Type="Italic">g</Emphasis> factor

Magnetoresistivity ρ _xx and ρ _xy and the acoustoelectronic effects are measured in p-Si/SiGe/Si with an impurity concentration p = 1.99 × 10¹¹ cm⁻² in the temperature range 0.3–2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective g factor on the angle of magnetic field tilt θ to the normal to the plane of a two-dimensional p-Si/SiGe/Si channel is determined. A first-order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor ν = 2 at θ ≈ 59°–60°.