Photocurrent analysis of organic photovoltaic cells based on CuPc/C60 with Alq3 as a buffer layer

The performance of an organic photovoltaic(OPV) cell based on copper phthalocyanine CuPc/C60 with a tris(8-hydroxyquinolinato) aluminum(Alq3) buffer layer has been investigated.It was found that the power conversion efficiency of the device was 1.51% under illumination with an intensity of 100 mW/cm2,which was limited by a squareroot dependence of the photocurrent on voltage.The photocurrent-optical power density characteristics showed that the OPV cell had a significant space-charge limited photocurrent with a varied saturation voltage and a three quarters power dependence on optical power density.Also,the absorption spectrum was measured by a spectrophotometer,and the results showed that the additional Alq3 layer has a minor effect on photocurrent generation.     

Nitrogen Dioxide Sensing Properties and Mechanism of Copper Phthalocyanine Film

Copper phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based copper phthalocyanine film gas sensor for NO2 detection is fabricated by MEMS technology. The results show that the resistance and sensitivity of copper phthalocyanine film decrease obviously as the NO2 concentration increases from Oppm to lOOppm. However, the sensitivity nearly keeps a constant of O. 158 between 30 ppm and 70 ppm. The best working temperature of the gas sensor is 90℃ for NO2 gas concentrations of lOppm, 20ppm and 30ppm, which is much lower than that of general metal oxide gas sensor.     

Detailed analysis of ultrathin fluorescent red dye interlayer for organic photovoltaic cells

The influence of an ultrathin 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) fluorescent dye layer at donor/acceptor heterojunction on the performance of small-molecule organic photovoltaic (OPV) cell is studied. The structure of OPV cell is of indium-tin oxide (ITO)/copper phthalocyanine (CuPc)/DCJTB/fullerene (C₆₀)/bathophenanthroline (Bphen)/Ag. The results show that open circuit voltage (V_OC) increases to 0.57 V as the film thickness of DCJTB layer increases from 0.2 to 2.0 nm. By using an equivalent circuit model, the enhancement of V_OC is found to be attributed to the reduced reverse saturation current density (J_S) which is due to the lower highest occupied molecular orbital (HOMO) level in DCJTB than that in CuPc. Also, the short circuit current density (J_SC) is affected when the DCJTB layer becomes thicker, resulting from the high series resistance R_SA due to the low charge carrier mobility of fluorescent red dye.     

Improvement of Field Emission Characteristics of Copper Nitride Films with Increasing Copper Content

A copper nitride （Cu3N） thin film is deposited on a Si substrate by the reactive magnetron sputtering method. The XPS measurements of the composite film indicate that the Cu content in the film is increased to 80.82 at. % and the value of the Cu/N ratio to 4.2：1 by introducing 4% 112 into the reactive gas. X-ray diffraction measurements show that the film is composed of Cu3N crystallites with an anti-ReO3 structure. The effects of the increase of copper content on the field emission characteristics of the Cu3N thin film are investigated. Significant improvement in emission current density and emission repeatability could be attributed to the geometric field enhancement, caused by numerous surface nanotips, and the decrease of resistivity of the film.     

Organic Light Emitting Diodes with an Organic Acceptor/Donor Interface Involved in Hole Injection

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-,10-perylenetetracarboxylic dianhydride （PTCDA） and donor copper phthalocyanine （CuPc） involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10nm PTCDA and 5 nm CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.     

Doping in the Mixed Layer to Achieve High Brightness and Efficiency Organic Light Emitting Devices

Doping in the mixed layer was introduced to fabricate high brightness and high efficiency organic light emitting devices.In these devices,a copper phthalocyanine(CuPc) film acts as the buffer layer,a naphthylphenybiphenyl amine (NPB) film as the hole transport layer and a tris(8-hydroxyquinolinolate) aluminium (Alq3) film as the electron transport layer.The luminescent layer consists of the mixture of NPB,Alq3( to be called the mixed layer),and an emitting dopant 5,6,11,12-petraphenylnaphthacene (rubrene),where the concentration of NPB declined and the concentration of Alq3 was increased gradually in the deposition process.Adopting this doping mixed layer,the device exhibits the maximum emission of 49300cd/m^2 at 35V and the maximum efficiency of 7.96cd/A at 10.5V,which have been improved by two times in comparison with conventional doped devices.We attribute this improvement to the effective confinement of carriers in the mixed layer,which leads to the increase of the recombination efficiency of carriers.     

Organic Thin Film Field Effect Transistors with PMMA-GMA Gate Dielectric

We fabricate organic thin films using the copolymer of methyl methacrylate and glycidyl methacrylate （PMMA- GMA） as a gate dielectric with a simple top-contact structure. Copper phthalocyanine （CuPc） TFTs are fabricated and the influences of annealing on the performance are studied. The mobilities increase from 2.5 × 10^3 cm^2/Vs to 4.2 × 10^3 cm^2/Vs and threshold voltages decrease from -18 V to -10 V after annealing. The good performances of the devices approach those obtained with inorganic gate dielectric materials such as silicon dioxide under the same technical conditions. It is fully proven that PMMA-GMA is a competitive candidate as an excellent gate insulation layer.     

Electrical Characterization of Copper Phthalocyanine Thin-Film Transistors with Fluoride Gate Insulator

Different fluoride materlals are used as gate dielectrics to fabricate copper phthalocyanine （CuPc） thin film transistors （OTFTs）. The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10^-3 to 10^-1 cm^2V^-1 s^-1. The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs, The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.     

The investigation of ZnO：Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

Different aluminum-doped ZnO （AZO）/metal composite thin films, including AZO/Ag/Al, AZO/Ag/nickelchromium alloy （NiCr）, and AZO/Ag/NiCr/Al, are utilized as the back reflectors of p-i-n amorphous silicon germanium thin film solar cells. NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion, which increases the short circuit current density of solar cell. NiCr and NiCr/AI layers are used as protective layers of Ag layer against oxidation and sulfurization, the higher efficiency of solar cell is achieved. The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best. The initial conversion efficiency is achieved to be 8.05%.     

Improved Performance of Phthalocyanine Derivative Field-Effect Transistors by Inserting a Para-Quarterphenyl as the Inducing Layer

We investigate the phthalocyanine derivative organic field-effect transistors （OFETs） using a novel para - quaterphenyl （p-4p） as the inducing layer. Compared to the devices without the p-4p inducing layer, the performances of p-type （copper phthalocyanine） and n-type （fluorinated copper phthaloeyanine） OFETs with optimized thickness of p-4p thin films are greatly enhanced. Both the field-effect mobility and the on/off ratio of the two-type devices are improved by one order of magnitude compared to those of the control devices. This re- markable improvement is attributed to the introduction of p-4p, which can form a highly oriented and continuous phthalocyanine derivative film with the molecular π - π stack direction parallel to the substrate.     

Enhancing The Efficiency of White Organic Light-emitting Diode Using Energy Recyclable Photovoltaic Cells

We demonstrate that power recycling is feasible by using a semi-transparent stripped Al electrode as interconnecting layer to merge a white organic light-emitting devices (WOLED) and an organic photovoltaic(OPV) cell. The device is called a PVOLED. It has a glass/ITO/CuPc/m-MTDATA∶V2O5/NPB/CBP∶FIrpic∶DCJTB/BPhen/LiF/Al/P3HT∶PCBM/V2O5/Al structure. The power recycling efficiency of 10.133% is achieved under the WOLED of PVOLED operated at 9 V and at a brightness of 2 110 cd/m2, when the conversion efficiency of OPV is 2.3%. We have found that the power recycling efficiency is decreased under high brightness and high applied voltage due to an increase input power of WOLED. High efficiency (18.3 cd/A) and high contrast ratio (9.3) were obtained at the device operated at 2 500 cd/m2 under an ambient illumination of 24 000 lx. Reasonable white light emission with Commission Internationale De L'Eclairage (CIE) color coordinates of (0.32,0.44) at 20 mA/cm2 and slight color shift occurred in spite of a high current density of 50 mA/cm2. The proposed PVOLED is highly promising for use in outdoors display applications.     

High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafluorophthalocyaninatocopper (F₁₆CuPc)/copper phthalocyanine (CuPc) and F₁₆CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081~cm²/(V.s) was obtained from F₁₆CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F₁₆CuPc/CuPc-based transistor is better than that of F₁₆CuPc/pentacene. This is attributed to the morphologic match of two organic components.     

Electrical Characteristics of A1/CNT/NiPc/PEPC/Ag Surface-Type Cell

The blend of nickel phthalocyanine （NiPc） （2 wt. %） poly-N-epoxypropylcarbazole （PEPC）, （1 wt. %） and carbon nano-tube （CNT） powder （2 wt. %） in benzole is deposited by drop-casting on glass substrates with pre-deposited metallic electrodes to fabricate Ag/CNT/NiPc/PEPC/A1 surface type cell. It is assumed that the high nonlinearity of the I — V characteristics is related to deep traps in the nano-scale depletion region in NiPc that is observed experimentally. The values of ideality factor and barrier height are determined from the I — V curve and they are found to be 8.4 and 1.05eV, respectively. The values of mobility and conductivity are calculated to be 7.94 × 10？8 cm/Vs and 3.5 × 10？6 Ω？1 cm？1. The values of ideality factor and series resistance are also calculated by using Cheung＇s functions, which are in good agreement with the values calculated from the I — V curve.     

Highly conductive and transparent carbon nanotube-based electrodes for ultrathin and stretchable organic solar cells

In this work, we have presented a freestanding and flexible CNT-based film with sheet resistance of 60 ?/ and transmittance of 82% treated by nitric acid and chloroauric acid in sequence. Based on modified CNT film as a transparent electrode, we have demonstrated an ultrathin, flexible organic solar cell(OSC) fabricated on 2.5-μm PET substrate. The efficiency of OSC, combined with a composite film of poly(3-hexylthiophene)(P3HT) and phenyl-C61 butyric acid methyl ester(PCBM) as an active layer and with a thin layer of methanol soluble biuret inserted between the photoactive layer and the cathode, can be up to 2.74% which is approximate to that of the reference solar cell fabricated with ITO-coated glass(2.93%). Incorporating the as-fabricated ITO-free OSC with pre-stretched elastomer, 50% compressive deformation can apply to the solar cells. The results show that the as-prepared CNT-based hybrid film with outstanding electrical and optical properties could serve as a promising transparent electrode for low cost, flexible and stretchable OSCs, which will broaden the applications of OSC and generate more solar power than it now does.     

Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy

We investigate the heterojunction effect between para-sexiphenyl （p-6P） and copper phthalocyanine （CuPc） using Kelvin probe force microscopy. CuPc films are grown on the inducing layer p-6P by a weak epitaxy growth technique. The surface potential images of Kelvin probe force microscopy indicate the band bending in CuPc, which reduces grain boundary barriers and lead to the accumulation of holes in the CuPc layer. The electrical potentiM distribution on the surface of heterojunction films shows negligible grain boundary barriers in the CuPc layers. The relation between band bending and grain boundary barrier in the weak epitaxy growth thin films is revealed.     

Enhanced Electron Injection Efficiency and Electroluminescence in Organic Light—Emitting Diodes by using an Sn／Al Cathode

A series of organic light-emitting diodes(OLEDs)have been fabricated with different thicknesses of the tin(Sn)layer.The structure of the devices is indium-tin oxide(ITO)/copper phthalocyanine(CuPc)(12nm)N/N‘-diphenyl-N,N‘bis(1-naphthyl)-(1,1‘0biphenyl)-4,4‘-diamine(NPB)(60nm)/tris-(8-hydroxyquinoline)aluminum(Alq3) (60nm)/Sn/aluminium(Al(120nm).It is found that compared to OLEDs with only an Al cathode,both the electron injection efficiency and electroluminescence are improved when the thickness of the Sn layer is properly chsen.The maximum efficiency and brightness of the devices with Sn(2.1nm)/Al and Al cathode are 0.54lm/W and 9800cd/m^2,and 0.2561m/W and 3000cd/m^2,repectively.One possible explanatioin to this phenomenon is that the enhancement of the electron density of the Sn layer due to the electron transfer from the Al to the Sn layer leads to the improvement of the electron injection efficiency and electroluminescence.     

Near-Infrared Emission from Organic Light-Emitting Diodes Based on Copper Phthalocyanine with a Periodically Arranged Alq3：CuPc/DCM Multilayer Structure

We demonstrate near-infrared organic light-emitting devices with a periodically arranged tris（8-quinolinolato）aluminum （Alq3）：copper phthalocyanine （CuPc）/4-（dicyanomethylene）-2-methyl-6-（4-dimethylaminost-yry）-4H-pyran （DCM） multilayer structure. DCM and Alq3 doped with CuPc were periodically deposited. Room-temperature electrophosphorescence was observed at about 1.1 μm due to transitions from the first excited triplet state to the singlet ground state （T1 - S0） of CuPc. In this device, we utilize the overlap between the Q band πr - π^＊ at about 625nm of the absorption spectra of CuPc and the PL spectra of the DCM. The near-infrared emission intensity of the CuPc-doped Alq3 device with DCM increases about 2.5 times larger than that of the device without DCM. We attribute the efficiency enhancement to the better overlap between the PL spectra of DCM and the absorption spectra of CuPc.     

Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.     

AlOx prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 cm%-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software （PC1D）. With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.     

非晶Si1-xGex:H薄膜太阳能电池研究

The AMPS-ID program is used to investigate electrical and optical properties of the thin film solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H. The short circuit current density, open circuit voltage, fill factor and efficiency of the solar cell are investigated. The efficiency of the solar cell is 9.19% as thickness of a-Si1-xGex:H is 340 nm with Ge content x=0.1. In addition, we also discuss the factors which affect solar cell efficiency.