有机低维结构EL器件的特性

近年来，有机电发光器件已经有了很大进展，寿命也已突破万小时，尽管如此，如何更进一步提高发光效率仍是人们所关注的热点。通过与无机半导体低维结构特性的类比，指出对某些有机材料体系,低维结构同样可以改善器件的性能。     

Doping in the Mixed Layer to Achieve High Brightness and Efficiency Organic Light Emitting Devices

Doping in the mixed layer was introduced to fabricate high brightness and high efficiency organic light emitting devices.In these devices,a copper phthalocyanine(CuPc) film acts as the buffer layer,a naphthylphenybiphenyl amine (NPB) film as the hole transport layer and a tris(8-hydroxyquinolinolate) aluminium (Alq3) film as the electron transport layer.The luminescent layer consists of the mixture of NPB,Alq3( to be called the mixed layer),and an emitting dopant 5,6,11,12-petraphenylnaphthacene (rubrene),where the concentration of NPB declined and the concentration of Alq3 was increased gradually in the deposition process.Adopting this doping mixed layer,the device exhibits the maximum emission of 49300cd/m^2 at 35V and the maximum efficiency of 7.96cd/A at 10.5V,which have been improved by two times in comparison with conventional doped devices.We attribute this improvement to the effective confinement of carriers in the mixed layer,which leads to the increase of the recombination efficiency of carriers.     

有机/聚合物白光电致发光器件

将聚合物材料作为空穴传输材料,以有机小分子蓝光染料1,1,4,4－四苯基丁二烯,绿光染料8－羟基喹啉铝和黄光染料5,6,11,12－四苯基四苯并作为产生白光所需要的三种色源,制备了有机／聚合物白光电致发光器件。这种器件的设计使聚合物的热电稳定性好的优点与有机小分子材料荧光效率高的优点相结合,拓宽了材料的选择范围,更有利于选择能带匹配的材料体系。器件的开启电压为2.5V左右,发光效率在9V时达到最大1.24lm／W,该电压下的亮度达到1600cd/m^2,器件的最大亮度超过20000cd/m^2（18V）,器件最佳色度为（0.319,0.332),这在目前国际上有报道的有机／聚合物白光发光器件中居领先水平。     

Polymer thin-film transistor based on a high dielectric constant gate insulator

In this paper full polymer thin-film transistors (PTFTs) based on Poly (acrylonitrile) (PAN) as the gate dielectric and poly (2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV) as the semiconductor layer were investigated by using different channel width/length ratios. Relatively high dielectric constant of the polymer dielectric layer (6.27) can remarkably reduce the threshold voltage of the transistors to below -3V. Hole field-effect mobility of MEH-PPV of the PTFTs was about 4.8×10^-4cm²/Vs, and on/off current ratio was larger than 10², which was comparable with that of transistors with widely used Poly (4-vinyl phenol) (PVP) or SiO₂ as gate dielectrics.     

一种有机量子阱结构的光致发光特性

利用高真空有机分子束沉积系统，将两种有机材料，叔丁基联苯基呃二唑（PBD）和8－羟基喹啉铝（Alq),以交替沉积的方式形成一种周期性多异质结结构。从这种结构的能带图上看，类似于无机半导体中的I型量子阱结构，我们称之为有机量子阱结构。这种结构的光致发光（PL）谱线和Alq薄膜的PL谱线相比，峰值向高能量方向偏移了20nm，峰值半高宽窄化了25nm,并对其结果进行了分析     

有机量子阱电致发光器件

制备了普通的有机量子阱结构,并对结构进行了表征.在此基础上,制备了量子阱结构的白光电致发光器件.在分析了制作工艺对有机量子阱结构特性可能产生的影响之后,为了减少垒、阱界面互扩散效应的影响,提出了有机掺杂量子阱的概念,即垒与阱的母体是相同材料,只是在生长垒层的过程中同时掺入少量发光剂.由于掺杂剂的浓度梯度只有百分之零点几,因此,界面互扩散的影响很小,实际上我们用这种办法制备的有机量子阱器件的亮度、效率均有明显提高.在研究了阱数对器件特性的影响之后,我们发现一般情况下,两个阱是最好的.进一步研究了阱母体材料对有机量子阱器件特性的影响,结果发现,用NPB作母体比Alq作母体更好,这时器件的效率(cd/A)在45～13V工作电压范围内变化不大.