Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with ²⁰⁸Pb²⁷⁺ of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10¹⁷ ions/cm², some of them were subsequently irradiated with ²⁰⁸ Pb²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10¹⁶ He ions/cm². Also we found a new peak at 390nm after subsequent ²⁰⁸ Pb²⁷⁺ irradiation, which is possibly due to the crystallized sediment containing nano crystal Al₂O₃ appeared on the sample surface.     

采用EPR谱和TEM对YSZ单晶辐照损伤的研究

 利用电子顺磁共振(EPR)谱和透射电子显微镜(TEM)研究了YSZ单晶的辐照效应。200 keV的Xe和400 keV的Cs离子注入［111］取向的YSZ单晶中,注量均为5×10¹⁶ cm^-2。EPR结果表明辐照产生了共振吸收位置g‖=1.989 和 g⊥=1.869、对称轴为［111］的六配位Zr³⁺顺磁缺陷。Cs辐照产生了比Xe 离子辐照多约150倍的六配位Zr³⁺顺磁缺陷。两种样品的剖面电子显微分析表明没有发现非晶化转变,但是Cs离子辐照的样品在损伤集中区域产生了密度较高的缺陷。因此,EPR谱和电子显微观察均说明在相同离位损伤(约160 dpa)的情况下,Cs离子辐照比Xe 离子辐照产生了更多的缺陷。造成这一现象的原因是Cs离子是化学活性的而Xe 离子却是惰性的。     

Materials modification at zirconium–silicon interface using swift heavy ions

The reactivity of the Zr/Si interface induced by swift heavy ion beams of Au has been investigated in the present work. Zirconium was evaporated on a clean silicon substrate in ultra high vacuum (UHV) at a pressure of 10^?8 Torr by the electron beam evaporation technique and the final layer was a thin film of Au to avoid oxidation of zirconium. The Zr/Si system was irradiated by 350 MeV Au²⁶⁺ ions at liquid nitrogen temperature at different fluences (0.46×10¹⁴, 1.85×10¹⁴ and 4.62×10¹⁴ ions/cm²). Rutherford back scattering (RBS) spectroscopy using 2 MeV He ions was used to monitor the Zr and Si concentration profiles and interdiffusion at the interfaces. The irradiation at the Zr/Si interface showed mixing. X-ray diffraction measurements confirmed the formation of the ZrSi₂ phase. Thermal spike formation and melting in the tracks was found to be the dominant process at the interfaces.     

低能氮离子注入固态羧酸钠的光谱分析

对２５ｋｅＶ Ｎ＾＋离子束辐照羧酸钠引起其分子结构的变化进行了研究,通过紫外光谱的分析,得到了离子注入后苯甲酸钠的残存剂量效应曲线,辐照后乙酸钠样品产生了新的具有紫外吸收的物质。傅里叶红外光谱分析证明,两种羧酸钠样品辐照后的产物中含有新的化学基团氰基。     

Transmission of low-energy (< 10 eV) O ions through Au films on TiO2(110)

In an attempt to identify the fundamental processes that influence ion transport through metallic surface layers, we have studied the transmission of O⁺ ions through discontinuous Au films adsorbed on TiO₂(110). A low energy (< 10 eV) O⁺ ion beam is generated via electron stimulated desorption when an Au-dosed TiO₂(110) substrate is bombarded with a focused 250 eV electron beam. Low energy ion scattering data indicate that Au evaporated under ultrahigh vacuum conditions at 300 K forms three-dimensional clusters on TiO₂(110). As the Au coverage increases, the formation of Au clusters on TiO₂(110) blocks a fraction of the TiO₂ surface and the O⁺ yield is attenuated. However, for high coverages (≥30% Au covered substrate) the O⁺ signal decreases at a faster rate than the TiO₂ open area fraction. We attribute the attenuation of the O⁺ yield for high Au coverages mainly to blocking of O⁺ by Au clusters, to deflection of trajectories by the image force between ions and Au clusters, and to charge transfer between desorbing O⁺ and neighboring Au clusters.     

Catastrophic sputtering of sulfur by helium

The sputtering yield of sulfur by 30-300 keV ⁴He+ at 20°C was found to be of the order of 10⁴-10⁶ sulfur atoms per incident ⁴He, dependent on the energy and total implanted fluence, and independent of the ion flux onto the target. This effect may be explained by a weakening of the van der Vaals binding between the S₈ rings due to Coulomb repulsion in the homogeneously charged volume, after a sufficient charge has accumulated in the highly insolating sample. Sulfur emission continues even for some time after the beam is switched off, and emission of sulfur atoms is also observed from non-irradiated areas adjacent to the irradiated spot, even from the rear side of 2-mm thick sulfur targets.     

Trapping and release of rare gases by 304L stainless steel

Helium andargon ions in the energy range 100 to 1400 eV and at doses varying from 10¹² to 10¹⁵ ions/cm² were implanted in a 304L stainless steel sample. Following implantation a linear temperature increase of the sample caused the gases to be released. The thermal release rates were studied as a function of ion dose and energy. The maxima observed in the thermal release rates are used to determine activation energies for thermally activated processes occurring in the metal. A rapid increase in the CO release rate coincident with the highest temperature He re-emission maximum indicates that the same mechanism is responsible for the release of both CO and He. It is suggested that the transport mechanisms revealed here are important in controlling void formations in neutron irradiated metals.     

单晶YSZ的Xe+离子辐照效应研究

 200keV Xe⁺离子辐照使单晶YSZ由无色透明变成紫色透明，结果表明，能量为200keV，注量为1×10¹⁷cm^-22的Xe⁺离子辐照YSZ单晶产生的损伤高达350dpa，在损伤区产生高密度的缺陷，但仍然没有发生非晶化转变。吸收光谱测试结果表明，产生吸收带的注量阈值大约为10¹⁶cm^-2。注量为1×10¹⁶cm^-2和1×10¹⁷cm^-2的样品，吸收带峰值分别位于522nm和497nm。光吸收带可能与Zr阳离子最近邻的氧空位捕获电子形成的F型色心和Y阳离子近邻的氧离子捕获空穴形成的V型色心有关。     

The study of damage and optical properties in LiNbO3 implanted by MeV Er and He ions

Abstract

Two LiNbO₃ (X and Y cut) crystals from different companies were implanted by 3.0 MeV Er ions to a dose of 7.5 × 10¹⁴ ions/cm² and 3.5 × 10¹⁴ ions/cm² with different beam current densities, respectively. After annealing at 1060°C in air for 2 hours, one LiNbO₃ sample was implanted by 1.5 MeV He ions to a dose of 1.5 × 10¹⁶ ions/cm². The Rutherford backscattering/channeling and prism coupling method have been used to study the damage and optical properties in implanted LiNbO₃. The results show: (1) the damage in LiNbO₃ created by 3.0 MeV Er ions depends strongly on the beam current density; (2) after annealing at 1060°C in air for 2 hours, a good Er doped LiNbO₃ crystal was obtained; (3) there is waveguide formation possible in this Er-doped annealed LiNbO₃ after 1.5 MeV He ion implantation. It is suggested that annealing is needed to remove the damage created by MeV Er ions before the MeV He ion implantation takes place, to realize the waveguide laser for Er doped LiNbO₃.     

首次使用核反应法鉴别JUNA深地加速器A/q=2的束流种类

JUNA团队计划利用CJPL所提供的极低本底条件和400 kV高压平台上2.45 GHz ECR离子源产生的毫安量级束流首次在天体物理能区对关键核反应进行直接测量。实验需要10 emA的质子束流和He+束流以及2 emA的He2+束流。使用2.45 GHz离子源产生毫安量级的He2+束流是离子源制造的难点。由于离子源分析磁铁分辨能力有限,无法区分He2+和H+₂离子,本文首次使用核反应法对离子源产生的A/q=2的束流进行了鉴别,结果显示,JUNA项目2.45 GHz ECR离子源无法产生毫安量级的He2+束流。该研究成果为JUNA项目离子源的设计提供了重要的参考依据。JUNA团队另外研制了一台微波频率为14.5 GHz的ECR离子源并成功产生2 emA的He2+束流来满足实验需求。     

Ultraviolet excitation of rare-earth-doped YSZ crystals

Abstract

The optical properties of nominally pure and Er³⁺- or Pr³⁺ -doped yttria-stabilized zirconia single crystals were investigated under UV light excitation. In the excitation spectra of both types of doped crystals, a broad UV band is observed. Under excitation with light of different wavelengths inside this band, the luminescence features of the doped crystals are different. YSZ: Pr³⁺ samples exhibit the characteristic 4f → 4f emission of the Pr³⁺ ions. In YSZ: Er³⁺ crystals, both the Er³⁺ ion and the intrinsic luminescence are observed. Host to Er³⁺ ion radiative energy-transfer is also demonstrated. No dependence of the transfer process with the excitation wavelength was found. These results suggest that the UV band in Er³⁺ -doped crystals is associated with the lattice-dopant ion interaction rather than with the 4f5d interconfigurational band of the Er^3? ions.     

110keV铁离子束辐照L(+)–半胱氨酸的分子改性研究

用110keVFe离子注入L(+)-半胱氨酸薄膜样品,然后通过傅里叶变换红外光谱、紫外-可见光谱和核磁共振氢谱分析表明,L(+)-半胱氨酸在接受Fe离子束辐照后受到了严重损伤,在样品中产生了新的分子基团.ESR波谱分析表明在辐照产物中存在一种长寿命自由基.ESI质谱分析进一步支持了低能离子束辐照所致生物分子改性的发生.     

载能团簇离子在物质中的能量损失

实验表明,团簇离子在物质中的能量损失并不等于各成分单独作用的总和,而是具有非线性效应．这种非线性效应与团簇离子的能量、团簇的种类和大小、团簇成分之间的空间关联程度以及作用物质的结构有关．对团簇作用的非线性效应研究对于了解团簇与物质相互作用的机制具有非常重要的理论意义．MeV能区的团簇离子在物质中的非线性电子能损和核能损方面的直接实验数据还相当缺乏,其理论模型也更待建立．评述了载能团簇离子在物质中的能量损失及测量方法．Fast ions deposit energy in matter through electronic and nuclear collision processes. The relaxation of the deposited energy induces emission of photons, electrons, ions, and neutral species from the target. Comparing with single incident ion, cluster induces many new phenomena: such as non-linear energy loss, non-linear emission of secondary ions, production of giant tracks and craters in various irradiated materials. These new phenomena induced by clusters are attributed to the vicinage effect ......     

Refractive index profiles of ion implanted waveguides in thulium sodium yttrium tungstate

Planar waveguides were first formed in thulium sodium yttrium tungstate (Tm:NaY(WO₄)₂) crystals by the implantation of MeV He, P and Ni ions with certain doses at room temperature, respectively. The refractive index profiles of the three ion implanted waveguides were found different to some extent. The present data show that He⁺ ion implanted waveguides in Tm:NaY(WO₄)₂ should be the typical barrier type one, while a combination of radiation damage and radiation enhanced diffusion may be responsible for the refractive index profiles of the MeV Ni⁺ and P⁺ ion implanted waveguides in Tm:NaY(WO₄)₂.     

Influence of the Flux Peaking Effect on the DD Reaction Yield Upon D + Ion Channelling in Deuterated Palladium

The interaction between a deuterium ion (D+) beam and deuterium-enriched Pd and Ti targets are studied using the HELIS ion accelerator (Lebedev Physical Institute). The neutron yield is determined from the DD reaction in the deuterated Pd target whose surface is irradiated with a D+-ion beam with an energy of 20 keV. The neutron flux is measured in the D+-ion-beam direction as a function of the angle β of target rotation relative to the beam axis using a multichannel detector based on 3He counters. Significant anisotropy (orientation effect) of the neutron yield is observed; it is two times higher at β = 0° than at β = ±30°. The orientation effect can be associated with channeling and the so-called flux-peaking effect. It is studied by computer simulations using the BCM-2.0 code. The enhanced density of the D+ flux between the (200) planes of a Pd crystal (where implanted D is located) at zero angle of incidence with respect to these planes makes it possible to qualitatively explain the observed orientation effect. No effect is observed in a homogeneous target of deuterated titanium.     

用离子束增强沉积从V2O5粉末制备高热电阻温度系数VO_2薄膜

采用了一种用离子束增强沉积从V2O5粉末直接制备VO2薄膜的新方法,将纯度为997%的V2O5粉末压成溅射靶,在用Ar离子束溅射的同时,用氩氢混合束对沉积膜作高剂量离子注入,使沉积膜中V2O5的V—O键断裂,进而被注入的氢还原,退火后获得热电阻温度系数(TCR)高达4%的VO2薄膜.高剂量的氩氢混合束注入对薄膜引入应力,使薄膜的转换温度降低、电阻温度曲线斜率变大,是薄膜TCR增大的原因 关键词： 离子束增强沉积 VO2薄膜 热电阻温度系数     

Helium/hydrogen synergistic effect in reduced activation ferritic/martensitic steel investigated by slow positron beam

Here, we investigated the irradiation defect in reduced activation ferritic/martensitic steels by slow positron beam. Three ion-irradiation experiments were carried out: (i) He²⁺ irradiation, (ii) H⁺ irradiation and (iii) He²⁺ irradiation followed by H⁺ irradiation, at temperature 450?°C. The presences of vacancy defects, represented by ?S_He+H parameter, induced by sequential irradiations was larger than the sum of defects, ?S_He parameter + ?S_H parameter, caused by single He ions and single H ions. The synergistic effect of He and H was confirmed clearly from the perspective of positron annihilation spectroscopy.     

Collimated multi-MeV ion beams from high-intensity laser interactions with underdense plasma

A beam of multi-MeV helium ions has been observed from the interaction of a short-pulse high-intensity laser pulse with underdense helium plasma. The ion beam was found to have a maximum energy for He2+ of (40(+3)(-8)) MeV and was directional along the laser propagation path, with the highest energy ions being collimated to a cone of less than 10 degrees. 2D particle-in-cell simulations show that the ions are accelerated by a sheath electric field that is produced at the back of the gas target. This electric field is generated by transfer of laser energy to a hot electron beam, which exits the target generating large space-charge fields normal to its boundary.     

Optical and magnetic properties of nitrogen ion implanted MgO single crystal

The microstructure,optical property and magnetism of nitrogen ion implanted single MgO crystals are studied. A parallel investigation is also performed in an iron ion implanted single MgO sample as a reference. Large structural,optical and magnetic differences are obtained between the nitrogen and iron implanted samples. Room temperature ferromagnetism with a fairly large coercivity field of 300 Oe (1Oe=79.5775 A/m),a remanence of 38% and a slightly changed optical absorption is obtained in the sample implanted using nitrogen with a dose of 1×1018 ions/cm2 . Tran- sition metal contamination and defects induced magnetism can be excluded when compared with those of the iron ion implanted sample,and the nitrogen doping is considered to be the main origin of ferromagnetism.     

Crossed beam photodissociation imaging of HeH+ with vacuum ultraviolet free-electron laser pulses

Molecular photofragmentation has been studied by event imaging on HeH+ ions at 32 nm (38.7 eV) in a fast ion beam crossed with the free-electron laser in Hamburg (FLASH), analyzing neutral He product directions and energies. Fragmentation into He(1snl,n > or = 2)+H+ was observed to yield significant photodissociation at 32 nm with an absolute cross section of (1.4+/-0.7) x 10(-18) cm2, releasing energies of 10-20 eV. A clear dominance of photodissociation perpendicular to the laser polarization was found in contrast to the excitation paths so far emphasized in theoretical studies.