磁性材料的磁结构、磁畴结构和拓扑磁结构

首先简要地介绍了磁性材料中磁结构、磁畴结构和拓扑磁结构以及相互之间的关系. 一方面, 磁畴结构由材料的磁结构、内禀磁性和微结构因素决定; 另一方面, 磁畴结构决定了材料磁化和退磁化过程以及技术磁性. 拓扑学与材料物理、材料性能的联系越来越紧密. 最近的研究兴趣集中在一些拓扑磁性组态, 如涡旋、磁泡、麦纫、斯格米子等. 研究发现这些拓扑磁结构的拓扑性质与磁性能密切相关. 然后从尺寸效应、缺陷、晶界三个方面介绍国际学术界在磁结构、磁畴结构和拓扑磁结构方面的进展. 最后介绍了在稀土永磁薄膜材料的微观结构、磁畴结构和磁性能关系、交换耦合纳米盘中的拓扑磁结构及其动力学行为方面的工作. 通过对文献的评述, 得到以下结论: 开展各向异性纳米复合稀土永磁材料的研究对更好地利用稀土资源具有重要的意义. 可以有目的地改变材料的微结构, 可控地进行磁性材料的磁畴工程, 最终获得优秀的磁性能. 拓扑学的概念正在应用于越来越多的学科领域, 在越来越多的材料中发现拓扑学的贡献. 研究磁畴结构、拓扑磁性基态或者激发态的形成规律以及动力学行为对理解量子拓扑相变以及其他与拓扑相关的物理效应是十分重要的. 也会帮助理解不同拓扑学态之间相互作用的物理机制及其与磁性能之间的关系, 同时拓展拓扑学在新型磁性材料中的应用.     

The magnetic properties and magnetocaloric effects in binary R-T(R = Pr,Gd,Tb,Dy,Ho,Er,Tm;T = Ga,Ni,Co,Cu)intermetallic compounds

In this paper, we review the magnetic properties and magnetocaloric effects(MCE) of binary R–T(R = Pr, Gd, Tb,Dy, Ho, Er, Tm; T = Ga, Ni, Co, Cu) intermetallic compounds(including RGa series, RNi series, R_(12)Co_7 series, R_3 Co series and RCu_2series), which have been investigated in detail in the past several years. The R–T compounds are studied by means of magnetic measurements, heat capacity measurements, magnetoresistance measurements and neutron powder diffraction measurements. The R–T compounds show complex magnetic transitions and interesting magnetic properties.The types of magnetic transitions are investigated and confirmed in detail by multiple approaches. Especially, most of the R–T compounds undergo more than one magnetic transition, which has significant impact on the magnetocaloric effect of R–T compounds. The MCE of R–T compounds are calculated by different ways and the special shapes of MCE peaks for different compounds are investigated and discussed in detail. To improve the MCE performance of R–T compounds,atoms with large spin(S) and atoms with large total angular momentum(J) are introduced to substitute the related rare earth atoms. With the atom substitution, the maximum of magnetic entropy change(?SM), refrigerant temperature width(Twidth)or refrigerant capacity(RC) is enlarged for some R–T compounds. In the low temperature range, binary R–T(R = Pr, Gd,Tb, Dy, Ho, Er, Tm; T = Ga, Ni, Co, Cu) intermetallic compounds(including RGa series, RNi series,R_(12)Co_7 series, R_3 Co series and RCu_2series) show excellent performance of MCE, indicating the potential application for gas liquefaction in the future.     

Fabrication,properties, and applications of flexible magnetic films

Flexible magnetic devices, i.e., magnetic devices fabricated on flexible substrates, are very attractive in applications such as detection of magnetic field in an arbitrary surface, non-contact actuators, and microwave devices, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Flexible magnetic films are essential for the realization of various functionalities of flexible magnetic devices. To give a comprehensive understanding for flexible magnetic films and related devices, recent advances in the study of flexible magnetic films are reviewed, including fabrication methods, magnetic and transport properties of flexible magnetic films, and their applications in magnetic sensors, actuators, and microwave devices. Our aim is to foster a comprehensive understanding of these films and devices. Three typical methods have been introduced to prepare the flexible magnetic films, by deposition of magnetic films on flexible substrates, by a transfer and bonding approach or by including and then removing sacrificial layers. Stretching or bending the magnetic films is a good way to apply mechanical strain to them, so that magnetic anisotropy, exchange bias, coercivity, and magnetoresistance can be effectively manipulated. Finally, a series of examples is shown to demonstrate the great potential of flexible magnetic films for future applications.     

Giant low-field magnetocaloric effect in EuTi(1-x)NbxO3(x = 0.05, 0.1, 0.15, and 0.2) compounds

The magnetic properties and magnetocaloric effect(MCE)of EuTi(1-x)NbxO3(x=0.05,0.1,0.15,and 0.2)compounds are investigated.Owing to electronic doping,parts of Ti ions are replaced by Nb ions,the lattice constant increases and a small number of Ti⁴⁺(3d^0)ions change into Ti³⁺(3d^1).It is the ferromagnetism state that is dominant in the derivative balance.The values of the maximum magnetic entropy change(-?SM^max)are 10.3 J/kg·K,9.6 J/kg·K,13.1 J/kg·K,and 11.9 J/kg·K for EuTi(1-x)NbxO3(x=0.05,0.1,0.15,and 0.2)compounds and the values of refrigeration capacity are 36,33,86,and 80 J/kg as magnetic field changes in a range of 0 T–1 T.The EuTi(1-x)NbxO3(x=0.05,0.1,0.15,and 0.2)compounds with giant reversible MCE are considered as a good candidate for magnetic refrigerant working at lowtemperature and low-field.     

Eu_(0.9)M_(0.1)TiO_3(M=Ca,Sr,Ba,La,Ce,Sm)的磁性和磁热效应

EuTi0_3是直接带隙半导体材料,在液氦温度附近呈现反铁磁性,且具有较大的磁熵变,但是当其转变为铁磁性时,可以有效提高低磁场下的磁熵变.本文通过元素替代,研究晶格常数的变化和电子掺杂对磁性和磁热效应的影响.实验采用溶胶凝胶法制备EuTiO_3和Eu_(0.9)M_(0.1)TiO_3 (M=Ca, Sr, Ba, La, Ce, Sm)系列样品.结果表明:大离子半径的碱土金属离子替代提高了铁磁性耦合,有利于提高低磁场下的磁热效应.电子掺杂可以抑制其反铁磁性耦合从而使其表现为铁磁性.当大离子半径的稀土La和Ce离子替代Eu离子时,既增大了晶格常数也实现了电子掺杂,表现出较强的铁磁性.在1 T的磁场变化下,Eu_(0.9)La_(0.1)TiO_3和Eu_(0.9)Ce_(0.1)TiO_3的最大磁熵变分别为10.8和11 J/(kg·K),均大于EuTi0_3的9.8 J/(kg·K);制冷能力分别为39.3和51.8 J/kg,相对于EuTi0_3也有所提高.     

Electronic structures and magnetic couplings of B-, C-, and N-doped BeO

The electronic structures and magnetic properties of B-, C-, and N-doped BeO supercells are investigated by means of ab initio calculations using density functional theory. The magnetic exchange constants of C-doped BeO at different doping levels are also calculated. A phenomenological band structure model based on p-d exchange-like p-p level repulsion between the dopants is proposed to explain the magnetic ground states in B-, C-, and N-doped BeO systems. The evolution from the antiferromagnetic phase to the ferromagnetic phase of C-doped BeO supercell with C concentration decreasing can also be well explained using this model. The findings in this study provide a simple guide for the design of band structure for a magnetic sp-electron semiconductor.     

Crystal structures,phase relationships,and magnetic phase transitions of R_5M_4 compounds (R = rare earths,M = Si,Ge)

Our recent studies of the crystal structures, phase transitions, and magnetic properties of intermetallic compounds R5M4 (R = rare earths; M = Si, Ge) are reviewed briefly. First, crystal structures, phase relationships, and magnetic properties of several 5:4 compounds, including Nd5Si4xGex , Pr5Si4xGex, Gd5xLaxGe4,La5Si4, and Gd5Sn4 , are presented. In particular, the canted spin structures as well as the magnetic phase transitions in Pr5Si2Ge2 and Pr 5 Ge 4 investigated by neutron powder diffractions and small-angle neutron scattering are reviewed. Second, the crystal structures and magnetic properties of the most studied compounds Gd5(Si,Ge)4 are summarized. The focus is on the parent compound Gd5Ge4 , which is an amazing material exhibiting magnetic anisotropy, angular dependent spin-flop transition, metastable magnetic response, Griffiths-like phase, thermal effect under pulsed fields, antiferromagnetic and ferromagnetic resonances, pronounced effects of impurities, and high-field induced magnetic transitions.     

The internal magnetic field distribution, and single exponential magnetic resonance free induction decay, in rocks

When fluid saturated porous media are subjected to an applied uniform magnetic field, an internal magnetic field, inside the pore space, is induced due to magnetic susceptibility differences between the pore-filling fluid and the solid matrix. The microscopic distribution of the internal magnetic field, and its gradients, was simulated based on the thin-section pore structure of a sedimentary rock. The simulation results were verified experimentally. We show that the 'decay due to diffusion in internal field' magnetic resonance technique may be applied to measure the pore size distribution in partially saturated porous media. For the first time, we have observed that the internal magnetic field and its gradients in porous rocks have a Lorentzian distribution, with an average gradient value of zero. The Lorentzian distribution of internal magnetic field arises from the large susceptibility contrast and an intrinsic disordered pore structure in these porous media. We confirm that the single exponential magnetic resonance free induction decay commonly observed in fluid saturated porous media arises from a Lorentzian internal field distribution. A linear relationship between the magnetic resonance linewidth, and the product of the susceptibility difference in the porous media and the applied magnetic field, is observed through simulation and experiment.     

Structural,electronic,and magnetic properties of vanadium atom-adsorbed MoSe_2 monolayer

Using the first-principles calculations, we study the structural, electronic, and magnetic properties of vanadium adsorbed MoSe_2 monolayer, and the magnetic couplings between the V adatoms at different adsorption concentrations. The calculations show that the V atom is chemically adsorbed on the MoSe_2 monolayer and prefers the location on the top of an Mo atom surrounded by three nearest-neighbor Se atoms. The interatomic electron transfer from the V to the nearestneighbor Se results in the polarized covalent bond with weak covalency, associated with the hybridizations of V with Se and Mo. The V adatom induces local impurity states in the middle of the band gap of pristine MoSe_2, and the peak of density of states right below the Fermi energy is associated with the V- dz~2 orbital. A single V adatom induces a magnetic moment of 5 μBthat mainly distributes on the V-3d and Mo-4d orbitals. The V adatom is in high-spin state, and its local magnetic moment is associated with the mid-gap impurity states that are mainly from the V-3d orbitals. In addition,the crystal field squashes a part of the V-4s electrons into the V-3d orbitals, which enhances the local magnetic moment.The magnetic ground states at different adsorption concentrations are calculated by generalized gradient approximations(GGA) and GGA+U with enhanced electron localization. In addition, the exchange integrals between the nearest-neighbor V adatoms at different adsorption concentrations are calculated by fitting the first-principle total energies of ferromagnetic(FM) and antiferromagnetic(AFM) states to the Heisenberg model. The calculations with GGA show that there is a transition from ferromagnetic to antiferromagnetic ground state with increasing the distance between the V adatoms. We propose an exchange mechanism based on the on-site exchange on Mo and the hybridization between Mo and V, to explain the strong ferromagnetic coupling at a short distance between the V adatoms. However, the ferromagnetic exchange mechanism is sensitive to both the increased inter-adatom distance at low concentration and the enhanced electron localization by GGA+U, which leads to antiferromagnetic ground state, where the antiferromagnetic superexchange is dominant.     

Magnetic correction to the anomalous magnetic moment of electrons

We investigate the leading order correction of anomalous magnetic moment (AMM) to electrons in a weak magnetic field and find that the magnetic correction is negative and magnetic field dependent, indicating a magnetic catalysis effect for the electron gas. In the laboratory, to measure the g − 2, the magnitude of the magnetic field B is several T, and correspondingly the magnetic correction to the AMM of electron/muon is around 10⁻³⁴/10⁻⁴², therefore the magnetic correction can be safely neglected in the current measurement. However, when the magnitude of the magnetic field strength is comparable with the electron mass, the magnetic correction of the electron's AMM will become considerable. This general magnetic correction to the charged fermion's AMM can be extended to study quantum chromodynamic matter under a strong magnetic field.     

基于三维磁成像的近场磁性体探测

提出一种近场条件下未知磁源的三维磁成像方法.考虑到大多数磁性体不仅受背景磁场磁化，本身也带有较强剩磁，将观测面上的磁场转换为磁场矢量异常模量，并建立目标函数进行最优化求解，以得到符合观测磁场特征的磁性体磁化模型.仿真和实验表明：此方法可有效消除剩磁对反演结果的影响，能够实现对近场多个磁源磁化率分布的成像，验证了所提方法用于探测隐含磁体位置和形状的可行性.     

Structural, electronic, and magnetic properties of CrN under high pressure

The structural,electronic and magnetic properties of CrN under high pressure are investigated by first-principles calculations.The antiferromagnetic orthorhombic structure is identified to be the preferred ground state structure.It possesses a bulk modulus of 252.8 GPa and the nonzero magnetic moment of 2.33 μ B per Cr ion,which agree well with the experimental results.CrN undergoes structural and magnetic transitions from an antiferromagnetic rocksalt structure to a non-magnetic Pnma phase at 132 GPa.Under compression,the magnetic moment of the Cr ion reduces rapidly near the equilibrium and phase transition point,and the distribution of the density of states is broadened,but the form of overlap between the orbitals of Cr d and N p remains unchanged.The broadening of the band induces spin flipping,which consequently results in the smaller magnetic moment of the Cr ion.     

基于半导体断路开关的8 MW,10 kHz脉冲发生器

 功率器件半导体断路开关具有高重复频率工作能力。采用高速绝缘栅双极晶体管组件作为初级充电回路的主开关,建立了一台工作频率为10 kHz的脉冲发生器。脉冲发生器采用磁饱和脉冲变压器、磁开关及高压脉冲电容器组等固态器件进行两级脉冲压缩,产生小于100 ns的电流脉冲,对半导体断路开关进行泵浦,半导体断路开关反向截断泵浦电流在负载上产生高压脉冲输出。实验装置在电阻负载上得到了脉冲输出功率约为8.6 MW,脉冲宽度约10 ns,重复频率10 kHz的高压脉冲输出。     

Mn5Ge2.7M0.3 (M=Ga，Al，Sn) 化合物的磁性和磁熵变

研究了Mn₅Ge_2.7M_0.3(M=Ga，Al，Sn)化合物的磁性和磁熵变. x射线衍射实验表明，研究的化合物均呈六角Mn₅Si₃型结构. 三种原子对Ge原子的替代，使得平均Mn原子磁矩下降，但居里温度没有明显的变化. 由于磁矩的降低，导致磁熵变值的下降，在磁场变化为4.0×10⁶A·m^-1时，对应于M=Ga，Al和Sn的样品，最大磁熵变值ΔS^max_Ｍ分别为6.1，6.3和5.3J·kg^-1K^-1，但磁熵变峰值的半高宽ΔＴ_ＦＷＨＭ有所增加. 另外，Mn₅Ge_2.7M_0.3(M=Ga，Al，Sn)化合物在高于居里温度的Arrott曲线上出现了一个不连续点，即样品在一定温度下的顺磁磁化率在某一临界磁场下发生了突变，临界磁场与温度几乎呈正比关系.这可能是由于样品在加一定磁场时3d带的费米能级发生了变化，使得有效电子数的减少所致. 关键词： 居里温度 平均Mn原子磁矩 磁熵变 Arrott图     

基于磁开关的全固态、高功率、长脉冲发生器的初步研究

大多数电容储能型脉冲功率装置的共同特点是采用了气体开关, 由于气体绝缘恢复的限制和电极的烧蚀, 使得其重复频率都不太高, 而且寿命有限. 而目前广泛研究的磁脉冲压缩技术在脉冲功率系统的长寿命、高平均功率和高重复频率运行方面具有很大的应用前景. 通过对BOOST电路、LC谐振电路和磁脉冲压缩电路详细的理论分析和计算机模拟, 设计了由BOOST电路, LC谐振电路, 脉冲变压器, 磁压缩系统, 负载五大部分组成的脉冲发生器电路系统模型, 使用Pspice软件对系统进行了模拟、优化, 得到了电压幅值为55kV, 脉宽为500ns的输出脉冲.     

Magnetic van der Waals materials: Synthesis,structure, magnetism,and their potential applications

As the family of magnetic materials is rapidly growing, two-dimensional (2D) van der Waals (vdW) magnets have attracted increasing attention as a platform to explore fundamental physical problems of magnetism and their potential applications. This paper reviews the recent progress on emergent vdW magnetic compounds and their potential applications in devices. First, we summarize the current vdW magnetic materials and their synthetic methods. Then, we focus on their structure and the modulation of magnetic properties by analyzing the representative vdW magnetic materials with different magnetic structures. In addition, we pay attention to the heterostructures of vdW magnetic materials, which are expected to produce revolutionary applications of magnetism-related devices. To motivate the researchers in this area, we finally provide the challenges and outlook on 2D vdW magnetism.     

磁性材料进展

磁性材料大体上分为两类 :其一为铁磁有序的金属磁性材料 ;其二绝大多数为亚铁磁有序、具有半导体导电性质的非金属磁性材料 .5 0年代以前 ,金属磁性材料占绝对优势 ;5 0年代以后 ,非金属磁性材料发展成为磁性材料的主流 ,除电力工业用的高饱和磁化强度FeSi合金外 ,铁氧体几乎应用于各个领域 .历史似乎按螺旋形的方式发展 ,90年代后 ,金属磁性材料又以新的面貌出现 ,3d (4f,4d ,5d ,5f… )合金与化合物、非晶、纳米微晶磁性材料重领风骚 ,其性能远超越铁氧体 .纳米磁性材料将成为新的功能材料 .文章重点介绍了永磁材料与软磁材料 ,其他如磁记录材料、磁致冷材料、磁致伸缩材料等将作简单介绍 .     

多层膜［Co85Cr15/Pt］20的磁性、垂直磁记录特性和微结构的关系

采用磁控溅射法制备了性能优良的以Pt为缓冲层的［Co85₈₅Cr15_{15/Pt］2020 多层膜，研究了溅射气压对［Co8585Cr1515/Pt］2020多层膜微结构和磁性的 影响.研究结果表明，Ar溅射气压对［Co8585Cr1515/Pt］2020多层膜的微结构 、垂直磁各向异性和矫顽力有重要的影响 关键词： 溅射气压 多层膜 垂直磁各向异性 有效磁各向异性常数}     

磁流体粘度的实验研究

采用毛细法粘度计测量了水基Fe磁流体的粘度,分析了磁性粒子份额、表面活性剂含量以及外加磁场强度和方向对粘度的影响。实验结果表明,磁流体粘度随着磁性粒子和表面活性剂浓度的增加而增加;随着外加磁场强度的增大而增大,对于相同的磁流体,在外加磁场方向垂直于流动方向时的粘度大于外加磁场方向平行于流动方向时的粘度;表面活性剂含量的增大将减弱外加磁场对磁流体粘度的影响。