Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron–hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10–15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.     

Excitons in CdS and CdSe semiconducting quantum wires with dielectric barriers

Features of the photoluminescence spectra observed for various polarizations and intensities of the pumping radiation and the kinetics of photoluminescence of the CdS and CdSe nanocrystals grown in hollow nanochannels of an Al₂O₃ matrix are explained in terms of exciton transitions in semiconducting quantum wires with dielectric barriers. The observed exciton transition energies coincide with the values calculated with an allowance for the effects of quantum confinement and the “dielectric enhancement” of excitons. The latter effect is manifested by a significant increase in the Coulomb attraction between electrons and holes (the exciton binding energy exceeds 100 meV) due to a difference between the permittivities of semiconductor and insulator. It is shown that the exciton transition energy remains constant when the quantum wire diameter varies within broad limits. This is related to the fact that a growth in the one-dimensional bandgap width of the quantum wire caused by a decrease in the diameter is compensated by an increase in the exciton binding energy.     

Electronic states and shapes of silicon quantum dots

A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.     

Direct bandgap optical transitions in Si nanocrystals

JETP Letters - The effect of quantum confinement on the direct bandgap of spherical Si nanocrystals has been modelled theoretically. We conclude that the energy of the direct bandgap at the...     

Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

The effect of polarization-matched AlGaInN electron-blocking layer and barrier layer on the optical performance of blue InGaN light-emitting diodes is numerically investigated. The polarization-matched AlGaInN electron-blocking layer and barrier layer are employed in an attempt to reduce the polarization effect inside the active region of the light-emitting diodes. The simulation results show that the polarization-matched AlGaInN electron-blocking layer is beneficial for confining the electrons inside the quantum well region. With the use of both polarization-matched AlGaInN electron-blocking layer and barrier layer, the optical performance of blue InGaN light-emitting diodes is greatly improved due to the increased overlap of electron and hole wavefunctions. The method proposed in this paper can also be applied to the light-emitting diodes operating in other spectral range.     

Direct bandgap optical transitions in Si nanocrystals

The effect of quantum confinement on the direct bandgap of spherical Si nanocrystals has been modelled theoretically. We conclude that the energy of the direct bandgap at the Γ-point decreases with size reduction: quantum confinement enhances radiative recombination across the direct bandgap and introduces its “red“ shift for smaller grains. We postulate to identify the frequently reported efficient blue emission (F-band) from Si nanocrystals with this zero-phonon recombination. In a dedicated experiment, we confirm the “red“ shift of the F-band, supporting the proposed identification.     

Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers

The advantages of nitride-based dual-wavelength light-emitting diodes (LEDs) with an InAlN electron blocking layer (EBL) are studied. The emission spectra,carrier concentration in the quantum wells (QWs),energy band and internal quantum efficiency (IQE) are investigated. The simulation results indicate that an LED with an InAlN EBL performs better over a conventional LED with an AlGaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.     

Numerical analysis of three-colour HgCdTe detectors

The performance of three-colour HgCdTe photovoltaic heterostructure detector is examined theoretically. In comparison with two-colour detectors with two back-to-back junctions, three-colour structure contains an absorber of intermediate wavelength placed between two junctions and electronic barriers are used to isolate this intermediate region. This structure was first proposed by British workers. Three-detector structures with different localizations of separating barriers are analyzed. The calculation results are presented in the form of spatial distributions of bandgap energy and quantum efficiency. Enhanced original computer programs are applied to solve the system of non-linear continuity equations for carriers and Poisson equations. In addition, the numerical analysis includes the dependence of absorption coefficient on Burstein effect as well as interference effects in heterostructure with metallic electrical contacts. It is shown that the performance of the detector is critically dependent on the barrier’s doping level and position in relation to the junction. This behaviour is serious disadvantage of the considered three-colour detector. A small shift of the barrier location and doping level causes serious changes in spectral responsivity.     

Size regulation by bandgap-controlled etching: Application to germanium nanoparticles

A germanium (Ge) nanoparticle surface was etched in an aqueous solution under monochromatic light irradiation in the infrared-to-ultraviolet region. Since the bandgap widened up to the photon energy of the irradiating light, the average size of the nanoparticles was controlled and the size distribution narrowed. The quantum size effect explained the correlation between the resulting bandgap energy and the final size. The etched nanoparticles showed blue-green or red-infrared photoluminescence (PL) after the surfaces were terminated with organic molecules or hydrogen atoms. The PL peak energy was independent of size, indicating PL was due to radiative recombination via localized states at the Ge core surface.     

Photoelectric properties of In/n-CuIn5Se8 Schottky barriers

We have grown homogeneous CuIn₅Se₈ crystals with n-type conductivity and determined the activation energy for the donor centers. We created In/n-CuIn₅Se₈ Schottky barriers and obtained the first spectral dependences of the photoconversion quantum efficiency of these structures. From the results of analysis of the photoactive absorption edge of the Schottky barriers, we have interpreted the nature of the interband optical transitions and determined the bandgap for direct and indirect transitions in CuIn₅Se₈ crystals. We have established that it is feasible to use CuIn₅Se₈ in broadband optical photoconverters. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 4, pp. 502–505, July–August, 2006.     

Photo-induced surface charge separation of highly oriented TiO2 anatase and rutile thin films

Surface charge separation behavior of photo-generated carriers in highly oriented TiO₂ anatase and rutile films was investigated using a technique in which the transient surface charge is observed by laser pulse irradiation without metal contacts and an externally applied field. According to the measurements, the quantum efficiency of photo-generated holes transported toward the surface was determined as a function of incident laser energy. The photo-generated holes in anatase can be transported toward the surface for irradiation at the photon energy of its bandgap. The holes transported toward the rutile surface, however, were generated close to the surface for irradiation at the photon energy much higher than its bandgap.     

GaAsN/GaAs量子阱在1 MeV电子束辐照下的退化规律

为研究GaAsN/GaAs量子阱在电子束辐照下的退化规律与机制,对GaAsN/GaAs量子阱进行了不同注量(1×1015,1×1016 e/cm2)1 MeV电子束辐照和辐照后不同温度退火(650,750,850℃)试验,并结合Mulassis仿真和GaAs能带模型图对其分析讨论。结果表明,随着电子注量的增加,GaAsN/GaAs量子阱光学性能急剧降低,注量为1×1015 e/cm2和1×1016 e/cm2的电子束辐照后,GaAsN/GaAs量子阱PL强度分别衰减为初始值的85%和29%。GaAsN/GaAs量子阱电子辐照后650℃退火5 min,样品PL强度恢复到初始值,材料带隙没有发生变化。GaAsN/GaAs量子阱辐照后750℃和850℃各退火5 min后,样品PL强度随退火温度的升高不断减小,同时N原子外扩散使得样品带隙发生约4 nm蓝移。退火温度升高没有造成带隙更大的蓝移,这是由于进一步的温度升高产生了新的N—As间隙缺陷,抑制了N原子外扩散,同时导致GaAsN/GaAs量子阱光学性能退化。     

CdSe量子点拉曼谱的共振效应研究

本文介绍了用共振拉曼光谱研究CdSe量子点材料的结果,认为拉曼峰是ZnSe和量子点界面模的叠加。指出当激发光能量逐渐离开ZnSe带隙时,共振减弱,ZnSe峰不再占主导,界面模的拉曼峰出现移动及变宽。     

Electronic structure and optical gain of InAsPN/GaP(N) quantum dots

The electronic structure and optical gain of InAsPN/GaP(N) quantum dots (QDs) are investigated in the framework of the effective-mass envelope function theory. The strain distribution is calculated using the valence force field (VFF) method. With GaP barrier, for smaller InAsPN QDs, the minimum transition energy may occur at a lower phosphorous (P) composition, but for larger QDs, the transition energy increases as P composition increases due to the increased bandgap of alloy QDs. When the nitrogen (N) composition increases, the transition energy decreases due to the stronger repulsion between the conduction band (CB) and the N resonant band, and the transition matrix element (TME) is more affected by the transition energy rather than N–CB mixing. To obtain laser materials with a lattice constant comparable to Si, we incorporated 2% of N into the GaP barrier. With this GaP_0.98N_0.02 barrier, the conduction band offset is reduced, so the quantum confinement is lower, resulting in a smaller transition energy and longer wavelength. At the same time, the TME is reduced and the optical gain is less than those without N in the barrier at a low carrier density, but the peak gain increases faster when the carrier density increases. Finally it can surpass and reach a greater saturation optical gain than those without N in the barrier. This shows that incorporating N into GaP barriers is an effective way to achieve desirable wavelength and optical gain.     

Advantages of a monochromator for bandgap measurements using electron energy-loss spectroscopy

The practical advantages of a monochromator for electron energy-loss spectroscopy (EELS) in transmission electron microscopy are reviewed. The zero-loss peaks (ZLPs) of a monochromator and a cold field emission gun are compared in terms of bandgap measurement performance. The intensity of the ZLP tails at the bandgap energy is more important than the full-width at half maximum of the ZLP, and a monochromator is preferable to conventional electron sources. The silicon bandgap of 1.1eV is evaluated from the onset in the EEL spectrum obtained using the monochromator without a numerical procedure. We also show a high-speed instability-correction technique to realize the inherent energy resolution of the monochromator, in which instabilities of less than 335Hz are corrected using 512 EEL spectra obtained with an exposure time of 1.4ms. It will be useful in bandgap measurements and advanced studies for elucidating sub-eV EEL spectra.     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

锗硅量子阱结构带间吸收边研究

利用光电流谱的方法对锗硅量子阱结构的带间吸收边进行了研究.实验观察到了在不同的偏压和温度下,锗硅量子阱结构的带间吸收边谱线发生了有规律的变化.通过对锗硅量子阱材料的光电流谱的带间跃迁吸收边的拟合,得到了硅导带到锗价带的能带宽度分别为1.043 eV和1.050 eV.随着外加电场的增强,带边的吸收曲线向低能方向移动.通过理论计算得到了带间跃迁吸收边的漂移量与外加电场的关系,并与实验吻合较好.随着温度的降低,带间吸收边向高能方向偏移,对于这一现象给出了定性的解释,并通过拟合得到了禁带宽度随温度的变化率.     

Photovoltaic effect and optical absorption in MoS2

An investigation of the Schottky barriers of a number of metals on natural P-type MoS₂ was undertaken. The spectral dependence of the photovoltaic effect of all the metal barriers show two distinct features at 1.38 and 1.68 eV below the direct bandgap at 1.8 eV. A low energy edge at 1.2 eV is invariably observed for metal barriers on MoS₂. Absorption measurements performed over the same energy range indicate that the features observed in the photoresponse spectra are related to indirect transitions in MoS₂, in agreement with recent band calculations. Preliminary data indicate that MoS₂ based Schottky barrier solar cells may be of interest.     

CdxHg(1−x)Te Alloy Colloidal Quantum Dots: Tuning Optical Properties from the Visible to Near‐Infrared by Ion Exchange

The energy gap between valence and conduction levels in colloidal semiconductor quantum dots can be tuned via the nanoparticle diameter when this is comparable to or less than the Bohr radius. In materials such as cadmium mercury telluride, which readily forms a single phase ternary alloy, this quantum confinement tuning can also be augmented by compositional tuning, which brings a further degree of freedom in the bandgap engineering. Here it is shown that compositional control of 2.3 nm diameter Cd_xHg_(1?x)Te nanocrystals by exchange of Hg²⁺ in place of Cd²⁺ ions can be used to tune their optical properties across a technologically useful range, from 500 nm to almost 1200 nm. Data on composition‐dependent changes in the optical properties are provided, including bandgap, extinction coefficient, emission energy and spectral shape, Stokes shift, quantum efficiency, and radiative lifetimes as the exchange process occurs, which are highly relevant for those seeking to use these technologically important QD materials.     

Interface phonons and dielectric enhancement effects on excitons in quantum well

The theory of exciton polaron in quantum well is developed. The interaction with symmetric interface phonons is shown to contribute significantly to polaron exciton binding energy. As a result, this energy depends both on effective masses of charge particles in the quantum well and on polarization properties of the barriers. The conditions are found for strong exciton–phonon coupling in quantum well.