Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers |
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| Authors: | Wang Xing-Fu Tong Jin-Hui Zhao Bi-Jun Chen Xin Ren Zhi-Wei Li Dan-Wei Zhuo Xiang-Jing Zhang Jun Yi Han-Xiang and Li Shu-Ti |
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| Institution: | Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
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| Abstract: | The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells. |
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| Keywords: | GaN-based light-emitting diodes p-InGaN layers Mg acceptor |
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